TW200414561A - Light emitting diode package structure - Google Patents
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- TW200414561A TW200414561A TW92101763A TW92101763A TW200414561A TW 200414561 A TW200414561 A TW 200414561A TW 92101763 A TW92101763 A TW 92101763A TW 92101763 A TW92101763 A TW 92101763A TW 200414561 A TW200414561 A TW 200414561A
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200414561 五、發明說明(i) 一、 【發明所屬之技術領域】 本發明係關於一種發光二極體之封事生 其關於一種可增強發光二極體之發光效率的=肚本發明尤 有簡化發光二極體之封裴製程之優點,進 二構造,具 降低生產成本。 捉向生產率並 二、 【先前技術】 在商業與工業之應用上,發光二極體提供 螢光燈更有效率且成本更低之光源。近年來:、針=與 =經開發出各種封裂構造及方法’例如表面黏以 裝構k與倒裝晶片型封裝構造。 i封 圖1顯不習知的發光二極體之封裝構造之一 面圖。參照圖!,一發光二極體1〇以倒裝晶片 =封裝基座20上。發光二極體10具有一基板n式一-裝一 導電型半導體層12,形成於基板u上方,以及一 型半導體層13,形成於第一導電型半導體層12上方了 一 夕第一導電型半導體層12之一預定的區域上形成有一 = 14,而在第二導電型半導體層13之一預定的區域 二有一。第二電極i5。發光二極體1〇之製造方法 方式皆為眾所週知,故本文不再贅述。 、栋作 八在圖1所示之習知封裝構造中,二個金屬焊球i 6與J 7 么分別形成於發光二極體1〇之第一電極14與第二電極15上。 、塵=以倒裝晶片之方式,二個金屬焊球1 6與1 7分別對準且 接合於封裝基座2〇上所形成的第一墊21與第二墊22上。最 第7頁 200414561 五、發明說明(2)200414561 V. Description of the invention (i) 1. [Technical field to which the invention belongs] The present invention relates to the sealing of a light-emitting diode, and the invention relates to a method that can enhance the light-emitting efficiency of the light-emitting diode. The present invention is particularly simplified. The advantages of the sealing process of the light-emitting diode, the second structure can reduce the production cost. Seeking productivity. 2. [Previous technology] In commercial and industrial applications, light emitting diodes provide a more efficient and lower cost light source for fluorescent lamps. In recent years, various types of cracking structures and methods have been developed, such as surface bonding with k and flip-chip package structures. i-seal Figure 1 shows a side view of one of the packaging structures of an unfamiliar light-emitting diode. Refer to the picture! A light-emitting diode 10 is flip-chip mounted on the package base 20. The light emitting diode 10 has a substrate n-type, one-conducting semiconductor layer 12 formed on the substrate u, and a one-type semiconductor layer 13 formed on the first conductive type semiconductor layer 12 overnight. A predetermined area of one of the semiconductor layers 12 is formed with one = 14, and one predetermined area of one of the second conductive type semiconductor layers 13 is provided. Second electrode i5. The manufacturing methods of the light-emitting diodes 10 are well known, so they will not be repeated here. In the conventional package structure shown in FIG. 1, two metal solder balls i 6 and J 7 are formed on the first electrode 14 and the second electrode 15 of the light emitting diode 10, respectively. Dust = In the manner of flip chip, two metal solder balls 16 and 17 are aligned and bonded to the first pad 21 and the second pad 22 formed on the package base 20, respectively. Page 7 200414561 V. Description of Invention (2)
後,使用一透明樹脂1 8密封發光二極體1 〇,M 的發光二極體之封裝。當電源經由第—墊21與 ^取白知 應至發光二極體10時,發光二極體1 〇所產生的一塾2 2供 基板11與透明樹脂1 8而射出到外界,如圖1由、、> v會、、厂由 示。 圃i中之箭頭所指 圖1所示之習知封裝構造具有下列缺點。 焊球16與17可能彼此相接觸而導致第—電極14盘先’金屬 1 5短路。再者,在發光二極體丨〇以倒裝曰 /、第一電極 封裝基座20上時,必須確保金屬焊球16盥 式女裝於 ::墊21與第二墊22,導致製造更加困準 此外,期望能提供一種比圖1所示之習知封裝 佳的發光二極體之發光效率的封裝構造,藉裝以冓 t中所產生的熱量,進而增加發光二極 ,刼 靠度。 1 mI便用哥命與可 三、【發明内容】 枉有鑒於前述_ ’本發明之目的在於提供 構造1以簡化發光二極體之封裝製程 如阿生產率並降低生產成本。 進而 =明U —目的在於提供一種發光二極體 的=極體之發光效率,•以降低操3 度。 …'里,進而增加發光二極體之使用壽命與可靠 wmiThen, a transparent resin 18 is used to seal the light-emitting diode 10, M's light-emitting diode package. When the power source is connected to the light-emitting diode 10 through the first pad 21 and ^, the light-emitting diode 2 produced by the light-emitting diode 10 is supplied to the substrate 11 and the transparent resin 18 to be emitted to the outside, as shown in FIG. 1. By ,, > v meeting ,, by factory. The conventional package structure shown by the arrow in Fig. 1 has the following disadvantages. The solder balls 16 and 17 may come into contact with each other and cause the first electrode 14 to be short-circuited with the metal 15. Furthermore, when the light-emitting diode is mounted on the base 20 of the first electrode in a flip-chip manner, it is necessary to ensure that the metal solder ball 16 is placed on the :: pad 21 and the second pad 22, resulting in more manufacturing. In addition, it is expected to provide a package structure with better luminous efficiency than the conventional package shown in FIG. 1. By using the heat generated in 冓 t, the light-emitting diode can be increased in reliability. . 1 mI will use brother's life and can. 3. [Summary of the invention] In view of the foregoing _ 'the purpose of the present invention is to provide structure 1 to simplify the packaging process of light emitting diodes such as productivity and reduce production costs. Further = Ming U — The purpose is to provide a light-emitting diode with the light-emitting efficiency of the pole, in order to reduce the operation by 3 degrees. … ', Thereby increasing the life and reliability of the light emitting diode wmi
I 第8頁 200414561 五、發明說明(3) 依據本發 造,包括形成 係用以支撐發光二極體之 容納發光二極體。至少一 座之表面中位 一平面金屬層 一樹脂填滿凹 明之一態樣 有一凹槽之 於凹槽以外 ’提供 一透明 基板。 平面金 之區域 中之一層與發光 密封發光二極 依據本發 用以提供至少 一中間檯面上 少一配線連接 二電極中之一 與至少一配線 依據本發 裝構造,包括 體之基板朝向 全容納發光二 載座之表面中 體與至少一 明之另一態 一中間檯面 並連接至位 至少一平面 個。一樹脂 〇 明之又另一 形成有一貫 貫通孔之下 極體。至少 位於貫通孔 少~^平 配線。 樣,凹 。至少 於凹槽 金屬層 填滿凹 態樣, 通孔之 開D 〇 一平面 以外之 層與發 覆蓋至 與至少 態樣, 檯面。 一種發光二極體之封裝構 絕緣承載座。凹槽之底面 凹槽之深度足夠用以完全 屬層形成於透明絕緣承載 上。至少一配線連接至少 極體之二電極中之一個。 面金屬層之一部分,藉以 槽得具有至少一階梯部, 一平面金屬層形成於至少 以外之至少一金屬墊。至 中之一層與發光二極體之 槽,藉以密封發光二極體 提供一種發 一絕緣承載 貫通孔之深 金屬層形成 區域上。至 先—極體之 少一平面金 光二極體之封 座。發光二極 度足夠用以完 於透明絕緣承 少一配線連接 二電極中之一 屬層之一部 一配線。 貫通孔得具有至少一階梯 至少一平面金屬層形成於 至少一平面金屬層中之一 個。一樹脂填滿貫通孔且 分’藉以密封發光二極體 依據本發明之再另一 ,用以提供至少一中間I Page 8 200414561 V. Description of the invention (3) According to the present invention, the method includes forming a light-emitting diode-receiving diode that is used to support the light-emitting diode. The surface of at least one seat is centered on a plane metal layer and a resin is filled in the recessed form. A recess is provided outside the recess ′ to provide a transparent substrate. One layer in the area of flat gold and the light-emitting sealed light-emitting diode according to the present invention are used to provide at least one wiring on the intermediate table to connect one of the two electrodes and the at least one wiring according to the present installation structure. The middle body of the surface of the light-emitting two-carrier and at least one of the other states is an intermediate mesa and is connected to at least one plane. One resin 〇 The other is formed under the body through a through hole. Located at least through holes. Like, concave. At least the metal layer of the groove is filled with a concave state, and the opening D of the through hole is not covered by a layer and a plane other than the plane. An encapsulation structure of a light-emitting diode. The bottom surface of the groove is deep enough to form a complete metal layer on the transparent insulating carrier. At least one wiring is connected to at least one of the two electrodes of the polar body. A portion of the surface metal layer has at least one stepped portion through which the groove is formed, and a planar metal layer is formed on at least one metal pad other than the at least one metal pad. To the middle layer and the groove of the light emitting diode, thereby sealing the light emitting diode to provide a deep metal layer forming an insulating carrying through hole on the area. Foremost—the at least one planar gold diode mount. The light-emitting diode is sufficient to complete a transparent insulation support and one wiring connection. One of the two electrodes is a part of the metal layer and one wiring. The through hole has at least one step. At least one planar metal layer is formed in one of the at least one planar metal layer. A resin fills the through-holes and seals the light-emitting diode according to still another aspect of the present invention to provide at least one intermediate
200414561 五、發明說明(4) ------- 至少一中間檯面上並連接至位於貫通孔以外之至少一金屬 J。=少一配線連接至少一平面金屬層與發光二極體之二 ,極了之-個。一樹脂填滿貫通孔,#以密封發光二極體 與至少一配線。 四、【實施方式 下文中之說 特徵、與優點更 茲將參照圖 圖2 (a)顯示 30之頂視圖,而 二極體之封裝構 參照圖2 (a) 座3 0於大約中央 底面3 2與二個侧 座3 0係由玻璃所 槽31以外之區域 34a與34b。此外 屬層34a與34b上 參照圖2 (b) 極體10之基板11 光二極體1 0之基 以方便後續製程 1 0不限於圖示所 與其他目的、 佳實施例。 明絕緣承載座 實施例之發光 剖面圖。 透明絕緣承載 凹槽31具有一 透明絕緣承載 表面上,在凹 平面金屬層 形成於平面金 周邊區域上。 中使得發光二 舉例而言,發 於底面32上, ,發光二極體 ,而得為任意 明與附圖將使本發明之前述 明顯。 示詳細說明依據本發明之較 依據本發明第一實施例之透 圖2 ( b )顯示依據本發明第一 造沿著圖2(a)中之線A — A,之 ,依據本發明第一實施例之 的區域中开多成有一凹槽W。 壁面33a與33b。舉例而言, 形成。透明絕緣承載座3〇之 中’形成有一個彼此分離的 ,二個金屬墊35a與35b分別 ,位於透明絕緣承載座3〇之 ,發光二極體10放入凹槽31 由凹槽31之底面32所支撐。 板11可藉由透明黏附劑固定 之進行。應注意在本發明中 顯示的特定材料類型或結構200414561 V. Description of the invention (4) ------- At least one intermediate table and connected to at least one metal J outside the through hole. = One less wiring connects at least one planar metal layer and two of the light emitting diodes, one of which is extremely. A resin fills the through hole, # to seal the light emitting diode and at least one wiring. 4. [Embodiment] The features and advantages of the following embodiments will be described with reference to FIG. 2 (a), which shows a top view of 30, and the packaging structure of the diode is referred to FIG. 2 (a) the seat 30 is at about the center bottom surface 3 2 and 2 side seats 30 are areas 34a and 34b other than the groove 31 made of glass. In addition, the metal layers 34a and 34b are referred to FIG. 2 (b) The substrate 11 of the polar body 10 is the base of the photodiode 10 for the convenience of subsequent processes. The 10 is not limited to the purpose shown in the figure and other preferred embodiments. The light-emitting sectional view of the embodiment of the insulating carrier. The transparent insulating bearing groove 31 has a transparent insulating bearing surface, and a concave planar metal layer is formed on a peripheral area of the planar gold. For example, the light-emitting diodes, which are issued on the bottom surface 32, and the light-emitting diodes, and are given any description and drawings will make the foregoing of the present invention obvious. Fig. 2 (b) shows a detailed explanation according to the present invention compared with the first embodiment according to the present invention. Fig. 2 (b) shows the first construction according to the present invention along the line A-A in Fig. 2 (a). A groove W is formed in the region of the embodiment. Wall surfaces 33a and 33b. For example, formed. In the transparent insulating carrier 30, two metal pads 35a and 35b are formed separately from each other. The two metal pads 35a and 35b are respectively located in the transparent insulating carrier 30. The light emitting diode 10 is placed in the groove 31 and the bottom surface of the groove 31 is formed. Supported by 32. The plate 11 can be fixed by a transparent adhesive. Attention should be paid to the specific material type or structure shown in the present invention
第10頁 200414561Page 10 200414561
五、發明說明(5) 材料類型或結構。舉例而言’發光二極體1 0之材料類型得 為磷化鋁鎵銦型、氮化鋁鎵銦型、氮化銦鎵型、坤化銘錄 型、或破化矽型等諸如此類者。發光二極體1 〇之組態得為 兩電極在同一側且具有透明基板之組態。再者,發光二極 體1 0得設計成正面發光或背面發光。此外,發光二極體1 〇 得更包括有一反射層以及一透明導電層。 依據本發明之凹槽3 1具有足夠的深度使得發光二極體 10可完全容納於凹槽31内,不會從凹槽31之開口露出。舉 例而言,凹槽31之深度小於1〇 mm。配線36a用以連接第1 電極14與平面金屬層34a ,而配線36b用以連接第二電極 $平面金屬層34b。樹脂37填滿凹槽31且覆蓋配線3 6a與 :::出了槽31之部分,使得發光二極體1〇與配線心盥 亦且’樹脂37中可添加具有高反射性之 被反“ ί ΐ:?體1 °所產生的光線中朝向樹脂3 7的部分 =二未圖1效率。此外…更加提高發光效率 反射層(未圖不)得塗佈於樹脂37上 手 體10所產生的光線朝向底面32。 乂反射發先二極 當電源·經由突出的金屬| 1 0時,發光二極體1 〇所吝"供應至發光二極體 緣承載座30而射出到卜 ‘、'線會經由基板1 1與透明絕 較於圖1所示之習知封裝構造,依中之箭頭所心不。相 之封裝構造,可藉由餘罝 發明之發光二極體 精由間单的封裝製程完成,無須運用精密5. Description of the invention (5) Material type or structure. For example, the material type of the 'light emitting diode 10' can be aluminum gallium indium phosphide type, aluminum gallium indium nitride type, indium gallium nitride type, Kunhuan inscription type, or broken silicon type. The configuration of the light emitting diode 10 is a configuration in which two electrodes are on the same side and have a transparent substrate. Furthermore, the light emitting diode 10 must be designed to emit light from the front or the back. In addition, the light emitting diode 10 further includes a reflective layer and a transparent conductive layer. The groove 31 according to the present invention has a sufficient depth so that the light emitting diode 10 can be completely accommodated in the groove 31 and not exposed from the opening of the groove 31. For example, the depth of the groove 31 is less than 10 mm. The wiring 36a is used to connect the first electrode 14 and the planar metal layer 34a, and the wiring 36b is used to connect the second electrode $ plane metal layer 34b. Resin 37 fills the groove 31 and covers the wiring 3 6a and ::: out of the groove 31, so that the light-emitting diode 10 and the wiring are cleaned and 'resin 37 can be added with a highly reflective anti-reflective " ί ΐ: The part of the light generated by the body 1 ° facing the resin 3 7 = the efficiency shown in Fig. 1. In addition, the luminous efficiency is further improved. The reflective layer (not shown) must be coated on the resin 37 to produce the hand body 10 The light is directed to the bottom surface 32. 乂 Reflects the first diode. When the power source passes through the protruding metal | 10, the light emitting diode 10 is supplied to the light emitting diode edge carrier 30 and is emitted to the substrate ','. The wire will pass through the substrate 11 and transparent than the conventional package structure shown in Figure 1. According to the arrow in the middle, the package structure can be compared with the light-emitting diode invented by Yu Wei. Packaging process is completed, no need to use precision
第11頁 200414561 五、發明說明(6) 對準技術,進而提高生產率並降低生產成本。 圖3 ( a )顯示依據本發明第-眚么 ⑼之頂視圖,而嶋) = ;透:=承;座 二,封裝構造沿著圖3(a”之:二== 僅况明第一實施例不同於第一實施例之處。 β μΪ照r(a)與3(b),依據本發明第二實施例不同於依 2;:月Ϊ:實施例之處在於依據本發明第二實丄Ϊ 槽41中形成有二個階梯部。具體而言,下侧壁面—、中 間檯面44a、與上側壁面45a構成一階梯部,而下側壁面 43b、中間檯面44b、與上側壁面45b則構成另—階梯部。 再者’平面金屬層46a形成於中間檯面44a與上侧壁面… 上,而平面金屬層46b則形成於中間檯面44b與上側壁面 45b上。透明絕緣承载座3〇之表面上,在凹槽“以外之區 域中,形成有二個彼此分離的金屬墊47a與47b。金屬墊 47a連接於平面金屬層46a,而金屬墊47b則連接於平面金 屬層46b。 發光二極體1 〇放入凹槽41中使得發光二極體丨〇之基板 11由凹槽41之底面42所支撐。配線48a用以連接第一電極 14與平面金屬層46a中位於中間檯面44a上之部分,而配線 48b用以連接第二電極15與平面金屬層46b中位於中間檯面 44b上之部分。藉著此種具有二個階梯部之凹槽41的設 计’配線4 8 a與4 8 b可完全容納於凹槽41内。最後,樹脂4 9 填滿凹槽41且覆蓋配線4 8 a與4 8 b,使得發光二極體1 〇與配 線48a與48b密封於樹脂49内。舉例而言,樹脂49得由環氧 第12頁 200414561 五、發明說明(7) 樹脂所形成。樹脂49中可添加具有高導熱性之材料,以增 強封裝構造之散熱性能。亦且,樹脂4 9中可添加具有高反 射性之材料’使發光二極體1 Q所產生的光線中朝向樹脂4 g 的部分被反射以提高發光效率。此外,為了更加提高發光 效率’一反射層(未圖示)得塗佈於樹脂49上,用以反射發 光二極體1 〇所產生的光線朝向底面4 2。 從圖2(b)與圖3(b)之比較可知,因為配線48a與48b可 疋全位於凹槽41内,所以第二實施例之發光二極體之封裝 構造具有小於第一實施例之尺寸。 圖4顯示依據本發明第三實施例之發光二極體之封裝 構造之剖面圖。下文僅說明第三實施例不同於第一實施例 之處。 參照圖4 ’依據本發明第三實施例不同於依據本發明 第一實施例之處在於依據本發明第三實施例之絕緣承載座 無須為透明且於大約中央的區域處形成有一貫通孔51。 貫通孔51穿過絕緣承載座50,而形成下開口 52a與上開口 52b °應注意在本發明中,下開口 52&之孔徑尺寸得大於、 等於、或小於上開口 52b之孔徑尺寸,不限於圖4所示之例 子。 ^在封住下開口 52a之情況下,從上開口 52b注入透明樹 脂53a於貫通孔51内,使得貫通孔51僅被部分填滿。繼 經由上·開口 52b放入發光二極體1〇於貫通孔51内,使 光二極體1〇之基板丨丨由透明樹脂53a所支撐。在透明 樹脂53a經由烘烤處理而硬化之後,發光二極體1〇即固著Page 11 200414561 V. Description of the invention (6) Alignment technology to improve productivity and reduce production costs. Fig. 3 (a) shows a top view of the first-⑼ Mo 依据 according to the present invention, and 嶋) =; transparent: = bearing; seat two, the package structure is along Fig. 3 (a): two = = only the first case The embodiment is different from the first embodiment. Β μΪ According to r (a) and 3 (b), the second embodiment according to the present invention is different from that according to 2 :; Two stepped portions are formed in the solid groove 41. Specifically, the lower side wall surface, the middle mesa surface 44a, and the upper side wall surface 45a constitute a stepped portion, while the lower side wall surface 43b, the middle side surface 44b, and the upper side wall surface 45b are It constitutes another stepped portion. In addition, a 'planar metal layer 46a is formed on the intermediate mesa 44a and the upper side wall surface ..., and a planar metal layer 46b is formed on the intermediate mesa 44b and the upper side wall surface 45b. The surface of the transparent insulating carrier 30 In the area other than the groove, two metal pads 47a and 47b are formed separately from each other. The metal pad 47a is connected to the planar metal layer 46a, and the metal pad 47b is connected to the planar metal layer 46b. The light-emitting diode 10 is placed in the groove 41 so that the substrate 11 of the light-emitting diode is supported by the bottom surface 42 of the groove 41 The wiring 48a is used to connect the portion of the first electrode 14 and the planar metal layer 46a on the intermediate mesa 44a, and the wiring 48b is used to connect the portion of the second electrode 15 and the planar metal layer 46b on the intermediate mesa 44b. This design of the groove 41 with two stepped portions' wirings 4 8 a and 4 8 b can be completely contained in the grooves 41. Finally, the resin 4 9 fills the grooves 41 and covers the wirings 4 8 a and 4 8 b, so that the light-emitting diode 10 and the wiring 48a and 48b are sealed in the resin 49. For example, the resin 49 may be formed of epoxy on page 12 200414561 V. Description of the invention (7) resin. Adding a material with high thermal conductivity to enhance the heat dissipation performance of the package structure. Also, a material with high reflectivity can be added to the resin 4 9 to make the light generated by the light emitting diode 1 Q toward the resin 4 g It is reflected to improve the luminous efficiency. In addition, in order to further improve the luminous efficiency, a reflective layer (not shown) must be coated on the resin 49 to reflect the light generated by the light emitting diode 1 〇 toward the bottom surface 4 2. The comparison between Figure 2 (b) and Figure 3 (b) shows that, because The wires 48a and 48b can all be located in the groove 41, so the package structure of the light emitting diode of the second embodiment has a size smaller than that of the first embodiment. Fig. 4 shows a light emitting diode according to a third embodiment of the present invention. A cross-sectional view of the package structure. Only the third embodiment is different from the first embodiment in the following. Referring to FIG. 4 ′, the third embodiment according to the present invention is different from the first embodiment according to the present invention in that the third embodiment is different from the first embodiment. The insulating carrier of the three embodiments does not need to be transparent and a through hole 51 is formed at an approximately central region. The through hole 51 passes through the insulating bearing base 50 to form a lower opening 52a and an upper opening 52b. It should be noted that in the present invention, the aperture size of the lower opening 52 & The example shown in Figure 4. When the lower opening 52a is sealed, the transparent resin 53a is injected into the through-hole 51 from the upper opening 52b, so that the through-hole 51 is only partially filled. Then, the light emitting diode 10 is placed in the through hole 51 through the upper opening 52b, so that the substrate of the light diode 10 is supported by the transparent resin 53a. After the transparent resin 53a is hardened by the baking process, the light-emitting diode 10 is fixed.
200414561200414561
於貫通孔51内之透明樹脂53a上。最後,進行配線連接製 程,使=透明樹脂53b填滿貫通孔51且覆蓋配線36a與36b 中露出貫通孔51之部分,使得發光二極體1〇與配線36a與 36b密封於透明樹脂53a與53b内。 ” 當電源經由突出的金屬墊35a與3 5b供應至發光二極體 1 0時’發光二極體1 〇所產生的光線會經由基板丨丨與透明樹 脂53a而射出到外界,如圖4中之箭頭所指示。既然光線不 需經由絕緣承載座50射出到外界,故依據本發明第三實施 例之絕緣承載座5 0不限於由透明材料例如玻璃所形成,而 亦可由例如陶究、A1 N、S i C、塑膠、樹脂、或印刷電路 板、以及前述材料之組合所形成。此外,絕緣承載座5〇亦 得由複數個構件所組合而成,例如藉由使用一絕緣材料外 膜包覆一金屬核心體而形成。 圖5顯示依據本發明第四實施例之發光二極體之封裝 構造之剖面圖。下文僅說明第四實施例不同於第二實施例 之處。 參照圖5 ’依據本發明第四實施例不同於依據本發明 第二實施例之處在於依據本發明第四實施例之絕緣承載座 60無須為透明且於大約中央的區域處形成有一貫通孔61。 貫通孔61穿過絕緣承載座60,而形成下開口 62a與上開口 62b。應注意在本發明中,下開口 62 a之孔徑尺寸得大於、 等於、或小於上開口 62b之孔徑尺寸,不限於圖5所示之例 〇 如同第二實施例之凹槽41,貫通孔61中亦形成有二個On the transparent resin 53a in the through hole 51. Finally, the wiring connection process is performed so that the transparent resin 53b fills the through-hole 51 and covers the portion of the wiring 36a and 36b that exposes the through-hole 51, so that the light-emitting diode 10 and the wiring 36a and 36b are sealed in the transparent resin 53a and 53b. Inside. When the power is supplied to the light emitting diode 10 through the protruding metal pads 35a and 3 5b, the light generated by the 'light emitting diode 10' will be emitted to the outside through the substrate and the transparent resin 53a, as shown in FIG. 4 It is indicated by the arrow. Since light does not need to be emitted to the outside through the insulating bearing base 50, the insulating bearing base 50 according to the third embodiment of the present invention is not limited to being formed of a transparent material such as glass, but may also be made of, for example, ceramics, A1 N, S i C, plastic, resin, or printed circuit board, and a combination of the foregoing materials. In addition, the insulating carrier 50 may also be composed of a plurality of components, such as by using an outer film of an insulating material It is formed by covering a metal core. FIG. 5 shows a cross-sectional view of a packaging structure of a light emitting diode according to a fourth embodiment of the present invention. Only the fourth embodiment is different from the second embodiment with reference to FIG. 5. 'The fourth embodiment according to the present invention is different from the second embodiment according to the present invention in that the insulating carrier 60 according to the fourth embodiment of the present invention does not need to be transparent and formed at an approximately central area. Through-hole 61. The through-hole 61 passes through the insulating carrier 60 to form a lower opening 62a and an upper opening 62b. It should be noted that in the present invention, the aperture size of the lower opening 62a is greater than, equal to, or smaller than the aperture of the upper opening 62b. The size is not limited to the example shown in FIG. 5. Like the groove 41 of the second embodiment, two through holes 61 are also formed.
200414561 五、發明說明(9) 階梯部。藉由類似於第三實施例之製造方法,發光二極體 1 0之基板1 1由透明樹脂6 3a所支撐,然後透明樹脂6 3b填滿 貝通孔6 1且覆蓋配線4 8 a與4 8 b,使得發光二極體1 〇與配線 48a與48b密封於透明樹脂638與63b内。絕緣承載座6〇不限 於由透明材料例如玻璃所形成,而亦可由例如陶竟、 A 1 N、S i C、塑膠、樹脂、或印刷電路板、以及前述材料之 組合所形成。此外,絕緣承載座6 〇亦得由複數個構件所組 合而成’例如藉由使用一絕緣材料外膜包覆一金屬核心 而形成。 *從圖4與圖5之比較可知,因為配線4 8 a與4 8 b可完全位 於貫通孔61内,所以第四實施例之發光二極體之封裝.構造 具有小於第三實施例之尺寸。 圖6顯不依據本發明第五實施例之發光二極體之封裝 構,之剖面圖。下文僅說明第五實施例不同於第三實施例 在第五實施例中,用以密封發光二極體1〇與配線36& 土⑽之樹脂係由下樹脂部73a與上樹脂部73b所組成。下 ^旨部73a係由透明的材料所形成’用以作為光線射出通 較佳者為選擇對於基板丨丨之折射率匹配度高的材料來 3:m73a,可降低光線於基板11與下樹脂部間 独二全反射。上樹脂部73b可由具反射性的材料或 匕有,反射性材料之樹脂所形成,? :脂部73a。此外’為了更加提高發光效率,—反射月:: 圖示)得塗佈於樹月曰H,用卩反射發光二極體10所產^200414561 V. Description of invention (9) Stepped part. By a manufacturing method similar to the third embodiment, the substrate 1 1 of the light emitting diode 10 is supported by a transparent resin 6 3a, and then the transparent resin 6 3b fills the through-hole 6 1 and covers the wiring 4 8 a and 4 8 b, so that the light emitting diodes 10 and the wirings 48 a and 48 b are sealed in the transparent resins 638 and 63 b. The insulating carrier 60 is not limited to being formed of a transparent material such as glass, but may be formed of, for example, ceramic, A 1 N, Si C, plastic, resin, or printed circuit board, and a combination of the foregoing materials. In addition, the insulating bearing seat 60 may also be composed of a plurality of components, for example, formed by covering a metal core with an outer film of an insulating material. * As can be seen from the comparison between FIG. 4 and FIG. 5, because the wirings 4 8 a and 4 8 b can be completely located in the through-hole 61, the packaging of the light emitting diode of the fourth embodiment has a size smaller than that of the third embodiment. . FIG. 6 is a cross-sectional view showing a package structure of a light emitting diode according to a fifth embodiment of the present invention. Only the fifth embodiment is described below, which is different from the third embodiment. In the fifth embodiment, the resin used to seal the light-emitting diode 10 and the wiring 36 is made of a lower resin portion 73a and an upper resin portion 73b. . The bottom part 73a is formed of a transparent material. For light emission, it is better to choose a material with a high refractive index matching to the substrate. 3: m73a, which can reduce the light on the substrate 11 and the lower resin. Inter-ministry total reflection. The upper resin portion 73b may be formed of a reflective material or a resin having a reflective material. : Fat section 73a. In addition, in order to further improve the luminous efficiency, the reflection moon :: picture) must be coated on the tree moon H, and the light emitting diode 10 produced by 卩 reflects ^
200414561 五、發明說明(10) 的光線朝向下開口52a。再者,一屈光透鏡74得設置於貫 通孔51之下開口 52a處,藉以控制從發光二極體之封裝構 造射出的光線。 圖7顯示依據本發明第六實施例之發光二極體之封裝 構造之剖面圖。下文僅說明第六實施例不同於第四實施例 之處。 在第六實施例中,用以密封發光二極體10與配線48a 之樹脂係由下樹脂部83a與上樹脂部83b所組成。下 树脂部83a係由透明的材料所形成,用以作為光線射出通 道。較佳者為選擇對於基板u之折射率匹配度高的材料來 形成下樹脂部83a,可降低光線於基板丨丨與下樹脂部83a間 之界面發生全反射。上樹脂部83b可由具反射性的材料或 推雜有高反射性材料之樹脂所形成,用以反射光線朝向下 樹,部83a。此外,下樹脂部83a中得摻雜有一螢光材 如磷光劑或者一螢光層84塗佈於貫通孔61之下開口 62& 處。基於螢光物質的孔隙度以及塗佈厚度,從發光 之封裝構造射出的光線之波長被改變,藉以提供具 望的顏色之光線。 喇所期 雖然本發明業已藉由較佳 應了解者為··本發明不限於此 本發明意欲涵蓋對於熟習此項 種修改與相似配置。因此,申 廣的詮釋,以包容所有此類修 依據本發明之絕緣承載座、凹 貝施例作為例示加以說明, 被揭露的實施例。相反地, 技藝之人士而言係明顯的各 利範圍之範圍應根據最 改與相似配置。舉例而言, 槽、以及貫通孔之上開二與200414561 V. Description of the invention (10) The light is directed to the lower opening 52a. Furthermore, a refractive lens 74 must be disposed at the opening 52a below the through-hole 51 to control the light emitted from the package structure of the light emitting diode. FIG. 7 shows a cross-sectional view of a packaging structure of a light emitting diode according to a sixth embodiment of the present invention. In the following, only the sixth embodiment is different from the fourth embodiment. In the sixth embodiment, the resin used to seal the light emitting diode 10 and the wiring 48a is composed of a lower resin portion 83a and an upper resin portion 83b. The lower resin portion 83a is formed of a transparent material and serves as a light emission path. It is preferable to select a material having a high refractive index matching with the substrate u to form the lower resin portion 83a, which can reduce total reflection of light at the interface between the substrate 丨 and the lower resin portion 83a. The upper resin portion 83b may be formed of a reflective material or a resin doped with a highly reflective material to reflect light toward the lower tree portion 83a. In addition, a fluorescent material such as a phosphor or a fluorescent layer 84 is doped in the lower resin portion 83a to be applied to the opening 62 below the through hole 61. Based on the porosity and coating thickness of the fluorescent substance, the wavelength of the light emitted from the light emitting package structure is changed to provide light of a desired color. Although the present invention has been made by a better reader, the present invention is not limited to this. The present invention is intended to cover modifications and similar configurations that are familiar to those skilled in the art. Therefore, the extensive explanation is based on the embodiment of the insulating bearing seat and the concave housing that accommodates all such repairs according to the present invention as an example, and the disclosed embodiments. Conversely, the scope of the range of benefits that is obvious to the skilled person should be based on changes and similar configurations. For example, two grooves and two through holes are formed on the through hole.
200414561 五、發明說明(11) 下開口之平面型態皆不限於矩形而得為任何形狀例如圓 形、糖圓形、或多邊形。 200414561 圖式簡單說明 五、【圖示之簡單說明】 極體 之封裝構造之一例子之剖 圖1顯示習知的發光二 面圖; 圖2 (a)顯示依據本發曰月 之頂視圖; 第一實施例之透明絕緣承載座 圖2(b)顯示依據本發明第一實施例之發光二極體之 裝構造沿著圖2(a)中之線a — a,之剖面圖; 圖3 (a)顯示依據本發明第二實施例之透明絕緣承載座 之頂視圖;200414561 V. Description of the invention (11) The planar shape of the lower opening is not limited to a rectangle, but may be any shape such as a circle, a sugar circle, or a polygon. 200414561 Brief description of the diagram 5. [Simplified description of the diagram] Section 1 of an example of the package structure of a polar body 1 shows a conventional two-sided light-emitting diagram; FIG. 2 (a) shows a top view of the moon according to the present invention; Transparent insulation carrier of the first embodiment FIG. 2 (b) shows a cross-sectional view of a light emitting diode according to the first embodiment of the present invention, taken along line a—a, in FIG. 2 (a); FIG. 3 (a) a top view showing a transparent insulating carrier according to a second embodiment of the present invention;
圖3 (b)顯示依據本發明第二實施例之發光二極體之封 裝構造沿著圖3(a)中之線B-B,之剖面圖; 圖4顯示依據本發明第三實施例之發光二極體之封裝 構造之剖面圖; 圖5顯示依據本發明第四實施例之發光二極體之封裝 構造之剖面圖; 圖6顯示依據本發明第五實施例之發光二極體之封裝 構造之剖面圖;以及FIG. 3 (b) shows a cross-sectional view of the packaging structure of the light emitting diode according to the second embodiment of the present invention along the line BB ′ in FIG. 3 (a); FIG. 4 shows the light emitting diode according to the third embodiment of the present invention Cross-sectional view of a package structure of a polar body; FIG. 5 shows a cross-sectional view of a package structure of a light-emitting diode according to a fourth embodiment of the present invention; FIG. 6 shows a package structure of a light-emitting diode according to a fifth embodiment of the present invention Sectional view;
圖7顯示依據本發明第六實施例之發光二極體之封裝 構造之剖面圖。 元件符號說明: 10 發光二極體 11 基板 12 第一導電型半導體層FIG. 7 shows a cross-sectional view of a packaging structure of a light emitting diode according to a sixth embodiment of the present invention. Description of component symbols: 10 light-emitting diode 11 substrate 12 first conductive semiconductor layer
第18頁 200414561 圖式簡單說明 13 第二 導電型半導體 14, 15 電極 16, 17 金屬悍球 18 透明樹脂 20 封裝基座 21, 22 墊 30, 40 透明絕緣承載 31, 41 凹槽 32, 42 底面 3 3a, 33b 侧壁面 34a, 34b 平面金屬層 35a, 35b 金屬墊 3 6a, 36b 配線 37, 49 樹脂 43a, 43b 下側壁面 44a, 44b 中間檯面 4 5a, 45b 上側壁面 4 6a, 46b 平面金屬層 47a, 47b 金屬塾 48a, 48b 配線 50, 60 絕緣承載座 51, 61 貫通孔 52a 下開口 52b 上開口Page 18 200414561 Brief description of the drawing 13 Second conductive semiconductor 14, 15 Electrode 16, 17 Metal ball 18 Transparent resin 20 Package base 21, 22 Pad 30, 40 Transparent insulation carrying 31, 41 Groove 32, 42 Bottom surface 3 3a, 33b side wall surfaces 34a, 34b flat metal layers 35a, 35b metal pads 3 6a, 36b wiring 37, 49 resin 43a, 43b lower side wall surfaces 44a, 44b middle mesa 4 5a, 45b upper side wall surfaces 4 6a, 46b flat metal layers 47a, 47b Metal 塾 48a, 48b Wiring 50, 60 Insulating carrier 51, 61 Through hole 52a Lower opening 52b Upper opening
第19頁Page 19
200414561 圖式簡單說明 53a, 53b, 63a, 63b 透明樹脂 62a 下開口 62b 上開口 73a 下樹脂部 73b 上樹脂部 7 4 屈光透鏡 83a 下樹脂部 83b 上樹脂部 84 螢光層200414561 Brief description of drawings 53a, 53b, 63a, 63b Transparent resin 62a lower opening 62b upper opening 73a lower resin section 73b upper resin section 7 4 refractive lens 83a lower resin section 83b upper resin section 84 fluorescent layer
I 第20頁I Page 20
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Cited By (6)
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TWI398026B (en) * | 2010-04-28 | 2013-06-01 | Advanced Optoelectronic Tech | Light emitting element and light emitting module having the same |
TWI513064B (en) * | 2010-07-23 | 2015-12-11 | Sharp Kk | A light emitting device and a manufacturing method thereof |
US9488321B2 (en) | 2012-05-29 | 2016-11-08 | Formosa Epitaxy Incorporation | Illumination device with inclined light emitting element disposed on a transparent substrate |
TWI570350B (en) * | 2013-08-29 | 2017-02-11 | 晶元光電股份有限公司 | Illumination device |
TWI570352B (en) * | 2014-11-28 | 2017-02-11 | 宏齊科技股份有限公司 | Light emitting diode device and light emitting device using the same |
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TWI277222B (en) | 2004-10-29 | 2007-03-21 | Lighthouse Technology Co Ltd | LED module and method of packing the same |
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Cited By (11)
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TWI398026B (en) * | 2010-04-28 | 2013-06-01 | Advanced Optoelectronic Tech | Light emitting element and light emitting module having the same |
TWI513064B (en) * | 2010-07-23 | 2015-12-11 | Sharp Kk | A light emitting device and a manufacturing method thereof |
US9488321B2 (en) | 2012-05-29 | 2016-11-08 | Formosa Epitaxy Incorporation | Illumination device with inclined light emitting element disposed on a transparent substrate |
US9711490B2 (en) | 2012-05-29 | 2017-07-18 | Epistar Corporation | Illumination device |
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US10281123B2 (en) | 2012-05-29 | 2019-05-07 | Epistar Corporation | Illumination device |
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TWI570350B (en) * | 2013-08-29 | 2017-02-11 | 晶元光電股份有限公司 | Illumination device |
TWI570352B (en) * | 2014-11-28 | 2017-02-11 | 宏齊科技股份有限公司 | Light emitting diode device and light emitting device using the same |
US9887179B2 (en) | 2014-11-28 | 2018-02-06 | Harvatek Corporation | Light emitting diode device and light emitting device using the same |
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