JP2004207678A - Package for light emitting element and light emitting device - Google Patents

Package for light emitting element and light emitting device Download PDF

Info

Publication number
JP2004207678A
JP2004207678A JP2003204153A JP2003204153A JP2004207678A JP 2004207678 A JP2004207678 A JP 2004207678A JP 2003204153 A JP2003204153 A JP 2003204153A JP 2003204153 A JP2003204153 A JP 2003204153A JP 2004207678 A JP2004207678 A JP 2004207678A
Authority
JP
Japan
Prior art keywords
light emitting
emitting element
light
frame
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003204153A
Other languages
Japanese (ja)
Inventor
Yoshinori Maekawa
義紀 前川
Hidekazu Tamaru
日出和 田丸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2003204153A priority Critical patent/JP2004207678A/en
Publication of JP2004207678A publication Critical patent/JP2004207678A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To produce a package for a light emitting element, in which the light emitted from the light emitting element is reflected well and radiated uniformly and efficiently to the outside by eliminating a metallization layer requiring a troublesome forming process and causing a problem of stripping, through a simple process with a high reliability at a low cost. <P>SOLUTION: The package for a light emitting element comprises a substantially rectangular prism white ceramics substrate 1 having a part 1a for mounting the light emitting element 3 on the upper surface, and a white ceramics frame 2 bonded to the upper surface of the substrate 1 while surrounding the mounting part 1a. The frame 2 has a thickness W of 0.8 mm or above between the inner and outer circumferential surfaces and exhibits a reflectivity of 80% or above for the light having a wavelength of 400-700 nm. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、発光ダイオード等の発光素子を用いた表示装置等に用いられる、発光素子を収納するための発光素子収納用パッケージおよび発光装置に関する。
【０００２】
【従来の技術】
従来、発光ダイオード等の発光素子を収容するための発光素子収納用パッケージ（以下、パッケージともいう）として、セラミック製のパッケージが用いられている。従来のセラミック製のパッケージは、図２に断面図で示すように、上面の中央部に発光素子１３を搭載するための導体層から成る搭載部１１ａを有し、搭載部１１ａおよびその周辺から下面に導出された一対のメタライズ配線導体１４を有する略直方体や略四角形平板状のセラミック製の基体１１と、その上面に積層され、中央部に発光素子１３を収容するための貫通孔１２ａを有する略四角枠状のセラミック製の枠体１２とから主に構成されている（例えば、下記の特許文献１参照）。
【０００３】
そして、基体１１の上面の一方のメタライズ配線導体１４が接続された搭載部１１ａ上に発光素子１３を導電性接合材を介して固着するとともに発光素子１３の電極と他方のメタライズ配線導体１４とをボンディングワイヤ１６を介して電気的に接続し、しかる後、枠体１２の貫通孔１２ａ内に透明樹脂（図示せず）を充填して発光素子１３を封止することによって、発光装置が作製される。これにより、発光素子１３の発する光をパッケージの外部（図１では上方）に放射することができる。
【０００４】
なお、この発光装置は多数個を互いに隣接するように配列されて使用されることから、上記セラミック製のパッケージにおいては、搭載部１１ａに搭載された発光素子１３が発する光が基体１１および枠体１２を透過して、隣接する発光装置同士の光が混色するのを有効に防止するために、基体１１および枠体１２に黒色のセラミックスから成るものを用いている。また、枠体１２の貫通孔１２ａの内周面で発光素子１３の光を反射させてパッケージの上方に光を放射させるために、貫通孔１２ａの内周面にニッケル（Ｎｉ）めっき層や金（Ａｕ）めっき層を表面に有するメタライズ層からなる金属層１６を被着させている。
【０００５】
【特許文献１】
特開平２００２−２３２０１７号公報
【０００６】
【発明が解決しようとする課題】
しかしながら、上記従来の発光素子収納用パッケージにおいては、枠体１２の貫通孔１２ａの内周面に、Ｎｉめっき層やＡｕめっき層を表面に有するメタライズ層からなる金属層１６を被着させており、メタライズ層を被着させる工程が煩雑であるという問題点を有していた。
【０００７】
また、メタライズ層が被着された部位に発光素子１３の発する熱やその他の外部からの熱が加わると、メタライズ層と枠体１２の内周面との間に熱膨張係数差に起因する熱応力が発生し、これがメタライズ層を引き剥がすように作用して、メタライズ層が剥れてしまうという問題点があった。
【０００８】
従って、本発明は上記従来の問題点に鑑みて完成されたものであり、その目的は、形成工程が煩雑で剥離の問題が生じるメタライズ層を不要とすることができ、その結果、発光素子が発する光を良好に反射させて外部に均一かつ効率良く放射できる発光効率が極めて高い発光素子収納用パッケージおよび発光装置を簡易な工程で高信頼性でもって低コストに製造できるようにすることにある。
【０００９】
【課題を解決するための手段】
本発明の発光素子収納用パッケージは、上面に発光素子を搭載するための搭載部を有する白色のセラミックスから成る略直方体の基体と、該基体の上面に前記搭載部を囲繞するように接合された白色のセラミックスから成る枠体とを具備しており、前記枠体は、内周面と外周面との間の厚みが０．８ｍｍ以上であり、かつ波長が４００乃至７００ｎｍの光の反射率が８０％以上であることを特徴とする。
【００１０】
本発明の発光素子収納用パッケージは、白色のセラミックスから成る枠体は、内周面と外周面との間の厚みが０．８ｍｍ以上であり、かつ波長が４００乃至７００ｎｍの光の反射率が８０％以上であることから、枠体は発光素子が発する光を吸収することなく、枠体の表面で光を効率良く反射することができるので、発光素子が発する光を発光素子収納用パッケージの外部に効率良く放射することができる。また、枠体の内周面にメタライズ層および金属めっき層を被着しなくてもよいため、メタライズ層の剥離の問題が生じず、信頼性の高いものとなるとともに、簡易な構成のものを簡易な工程で低コストに製造できる。
【００１１】
本発明の発光装置は、上記本発明の発光素子収納用パッケージと、前記搭載部に搭載された発光素子と、該発光素子を覆う透明樹脂とを具備したことを特徴とする。
【００１２】
本発明の発光装置は、上記の構成により、簡易な構成で信頼性が高く、発光効率がきわめて高い高性能のものとなる。
【００１３】
【発明の実施の形態】
本発明の発光素子収納用パッケージを以下に詳細に説明する。図１は、本発明のパッケージについて実施の形態の一例を示す断面図であり、１は白色のセラミックスから成る基体、２は白色のセラミックスから成る枠体であり、主としてこれらで発光素子３を収容するためのパッケージが構成されている。
【００１４】
本発明のパッケージは、上面に発光素子３を搭載するための搭載部１ａを有する白色のセラミックスから成る略直方体の基体１と、基体１の上面に搭載部１ａを囲繞するように接合された白色のセラミックスから成る枠体２とを具備し、枠体２は、内周面と外周面との間の厚みＷ（図１）が０．８ｍｍ以上であり、かつ波長が４００乃至７００ｎｍの光の反射率が８０％以上である。
【００１５】
本発明の枠体２は、酸化アルミニウム（Ａｌ２Ｏ３）質焼結体，窒化アルミニウム（ＡｌＮ）質焼結体，等の焼結体（セラミックス）から成る略四角枠状のものであり、例えば枠体２が酸化アルミニウム焼結体から成る場合、ＳｉＯ２−Ａｌ２Ｏ３−ＭｇＯ−ＺｎＯ２−ＣａＯ系等のセラミックスから成る。
【００１６】
枠体２は、その厚みＷが０．８ｍｍ以上で、波長が４００乃至７００ｎｍの光の反射率が８０％以上であるためには、枠体２がＳｉＯ２−Ａｌ２Ｏ３−ＭｇＯ−ＣａＯ系のセラミックスから成る場合、Ａｌ２Ｏ３の含有量が９０〜９９重量％、ＳｉＯ２，ＭｇＯ，ＣａＯの合計の含有量が１〜１０重量％であることが好ましい。ＳｉＯ２，ＭｇＯ，ＣａＯの合計の含有量が１重量％未満では、Ａｌ２Ｏ３の焼結性が悪くなり、十分な硬度が得られにくくなる。１０重量％を超えると、耐熱性、機械的強度が不十分になるとともに熱伝導率が低下してしまう。
【００１７】
また、ＳｉＯ２はセラミックスの焼結性と密着性、ＭｇＯとＣａＯはセラミックスの焼結性と熱伝導性を高めるためにセラミックス中に含有されており、それぞれの効果を発揮するためにも、ＳｉＯ２，ＭｇＯ，ＣａＯのそれぞれが０．０１重量％以上含有されることが好ましい。また、セラミックスの密度、機械的強度を高めるために上記セラミックス中にＺｒＯ２を含有させても構わない。この場合、ＺｒＯ２の含有量は０．０１〜１０重量％であることが好ましい。０．０１重量％未満では、セラミックスの密度、機械的強度向上の効果が十分に発揮されない。１０重量％を超えると、電気絶縁性が悪くなる。また、ＳｉＯ２，ＭｇＯ，ＣａＯおよびＺｒＯ２の合計の含有量は、多すぎると耐熱性、強度が劣化するため、１０重量％以下であることが好ましい。
【００１８】
また、枠体２が窒化アルミニウム（ＡｌＮ）質焼結体から成る場合、ＡｌＮ−Ｅｒ２Ｏ３系等のセラミックスから成り、枠体２はその厚みＷが０．８ｍｍ以上で波長が４００乃至７００ｎｍの光の反射率が８０％以上であるためには、Ｅｒ２Ｏ３の含有量が窒化アルミニウム質焼結体の総重量に対して１〜１０重量％であることが好ましい。Ｅｒ２Ｏ３の含有量が１重量％未満では、ＡｌＮの焼結性が悪くなり、十分な硬度が得られにくくなる。１０重量％を超えると、耐熱性、機械的強度が低下するとともに熱伝導率が低下してしまう。
【００１９】
枠体２の厚みＷは０．８ｍｍ以上に特定されるが、０．８ｍｍ未満の場合、発光素子３の波長が４００〜７００ｎｍの光に対する反射率が８０％未満となり、発光素子３が発する光をパッケージの上面に効率良く反射させて放射することが困難になる。一方、枠体２の厚みＷは１０ｍｍ以下がよく、１０ｍｍを超えると、パッケージが極度に大型化になる。
【００２０】
また、枠体２が、波長４００乃至７００ｎｍの光の反射率が８０％未満では、発光素子３が発光する光が外部に対して良好に反射することが困難となるとともに、発光素子３が発光する光が枠体２を透過し、隣接する発光装置同士の光と混色する危険性が高くなる。
【００２１】
本発明の枠体２は、基体１の上面に積層されて焼結一体化されて接合されている。枠体２は、その中央部に発光素子３を収容するための断面形状が略円形や略四角形の貫通孔２ａを有しており、この貫通孔２ａ内に搭載部１ａに搭載された発光素子３が収容される。
【００２２】
また、枠体２の貫通孔２ａの内周面と基体１の上面とのなす角度を３５〜７０°として、貫通孔２ａの内周面が外側（図１では上方）に向かって漸次広がるような傾斜面となるようにすることが好ましく、この場合、枠体２の貫通孔２ａの内周面で反射した光をパッケージの外部により効率よく放射させることができる。上記角度が３５°未満では、貫通穴２ａの内周面をそのような角度で安定且つ効率良く形成することが困難となるとともに、パッケージが極度に大型化してしまう。７０°を超えると、貫通穴２ａ内に収容する発光素子３が発光する光を外部に対して良好に反射することが困難となる。
【００２３】
また、貫通孔２ａは、その断面形状が円形状または楕円形状であることが好ましい。この場合、貫通穴２ａ内に収容される発光素子３が発光する光を貫通穴２ａの内周面で全方向に満遍なく反射させて外部に極めて均一に放射することができるという利点がある。
【００２４】
本発明の基体１は、枠体２と実質的に同じ組成のセラミックスから成り、発光素子３を支持する支持体であり、その上面に発光素子３を搭載するための導体層から成る搭載部１ａを有しており、搭載部１ａはタングステン（Ｗ），モリブデン（Ｍｏ），銅（Ｃｕ），銀（Ａｇ）等の金属粉末のメタライズ層から成っている。
【００２５】
また、基体１は、搭載部１ａから下面にかけて導出されたメタライズ配線導体４ａおよび搭載部１ａの周辺から下面にかけて導出されたメタライズ配線導体４ｂが被着形成されている。メタライズ配線導体４ａ，４ｂは、ＷやＭｏ等の金属粉末のメタライズ層から成り、パッケージ内部に収納する発光素子３を外部に電気的に接続するための導電路である。そして、搭載部１ａには発光ダイオード等の発光素子３が金（Ａｕ）−シリコン（Ｓｉ）合金やＡｇ−エポキシ樹脂等の導電性接合材により固着されるとともに、メタライズ配線導体４ｂの搭載部１ａの周辺の部位には発光素子３の電極がボンディングワイヤ５を介して電気的に接続されている。
【００２６】
なお、メタライズ配線導体４ａ，４ｂおよび搭載部１ａの露出する表面に、ニッケル（Ｎｉ），金（Ａｕ），Ａｇ等の耐蝕性に優れる金属を１〜２０μｍ程度の厚みで被着させておくのがよく、メタライズ配線導体４ａ，４ｂおよび搭載部１ａが酸化腐蝕するのを有効に防止することができるとともに、搭載部１ａと発光素子３との固着およびメタライズ配線導体４ｂとボンディングワイヤ５との接合を強固にすることができる。従って、メタライズ配線導体４ａ，４ｂおよび搭載部１ａの露出表面には、厚さ１〜１０μｍ程度のＮｉめっき層と厚さ０．１〜３μｍ程度のＡｕめっき層またはＡｇめっき層とが、電解めっき法や無電解めっき法により順次被着されていることがより好ましい。
【００２７】
かくして、本発明のパッケージは、白色セラミックスから成る枠体２は、内周面と外周面との間の厚みが０．８ｍｍ以上であり、かつ波長が４００乃至７００ｎｍの光の反射率が８０％以上であることから、枠体２は発光素子３の光を吸収することなく、枠体２の表面で光を効率良く反射することができるので、発光素子３の光をパッケージの外部に効率良く放射することができる。また、枠体２の内周面にメタライズ層および金属めっき層を被着しなくてもよいため、メタライズ層の剥離の問題が生じず、信頼性の高いものとなるとともに、簡易な構成のものを簡易な工程で低コストに製造できる。
【００２８】
また、本発明の発光装置は、上記本発明の発光素子収納用パッケージと、搭載部１ａに搭載された発光素子３と、発光素子３を覆う透明樹脂とを具備したものである。発光素子３を覆う透明樹脂は、発光素子３の露出表面のみを覆うように設けられていてもよいし、枠体２の内側に発光素子３を覆って充填されていてもよい。さらに、枠体２の上面にガラス，サファイア，石英，透光性樹脂から成る透光性蓋体を接着してもよい。また、本発明の発光装置は、発光ダイオード等の発光素子３を収納した小型のものであることから、個々に蓋をするよりも透明樹脂で発光素子３を覆った方が封止の作業性が良く、また内部のボンディングワイヤ５等の位置固定や各導体層の腐蝕防止等の点で有利なものである。
【００２９】
なお、本発明は上述の実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲内で種々の変更を施すことは何等差し支えない。例えば、図３のパッケージの断面図に示すように、搭載部１ａを導体層として形成せずに、発光素子３を基体１の上面に直接搭載し、その周囲に発光素子３の電極と電気的に接続されるメタライズ配線導体４ａ，４ｂを形成してもよい。この場合、発光素子３が搭載部１ａに搭載されるとともに、発光素子３の電極とメタライズ配線導体４ａ，４ｂとをボンディングワイヤ５ａ，５ｂ等を介して電気的に接続することとなる。また、複数の発光素子３が搭載されるものであったり、複数の配線層が形成されるものであっても構わない。、
【００３０】
【実施例】
本発明の発光素子収納用パッケージの実施例を以下に説明する。
【００３１】
枠体２の各種の厚みＷに対する波長３５０〜７５０ｎｍの光の反射率を以下のようにして評価した。まずＳｉＯ２を１．５３重量％、Ａｌ２Ｏ３を９６．２５重量％、ＭｇＯを１．９９重量％、ＣａＯを０．２０重量％、ＺｒＯ２を０．０３重量％含むＳｉＯ２−Ａｌ２Ｏ３−ＭｇＯ−ＺｒＯ２−ＣａＯ系の白色のセラミックスから成る、直径が５０ｍｍで６種類の厚さ（下記表１参照）のセラミックグリーンシートを準備し、これらを１６００℃の高温にて焼成を行なって評価用のセラミック基板（試料Ｎｏ．１〜６）を作製した。
【００３２】
そして、これらの６種類のセラミック基板のそれぞれに、ピーク波長が３５０ｎｍ〜７５０ｎｍの９種類の光（下記表１参照）を照射し、光の反射率を分光測色計（ミノルタ社製「ＣＭ−３７００ｄ」）にて測定した。その結果を表１に示す。
【００３３】
【表１】

Figure 2004207678
【００３４】
表１より、厚みが０．８ｍｍ以上の試料Ｎｏ．４〜６では、光のピーク波長が４００〜７００ｎｍにおいて反射率が８０％以上であった（表中に○で示す）。
【００３５】
厚みが０．８ｍｍ未満の試料Ｎｏ．１，２では、光のピーク波長が４００〜７００ｎｍにおいて反射率は全て８０％未満となった（表中に×で示す）。
【００３６】
試料Ｎｏ．３では、光のピーク波長が４５０〜６５０ｎｍにおいてのみ反射率が８０％以上であり、鮮明なフルカラー表示が可能なピーク波長４００〜７００ｎｍの光を効果的に反射することができなかった（表中に×で示す）。
【００３７】
以上より、枠体２の厚みＷを０．８ｍｍ以上とすることが必要であることが判った。これにより、光のピーク波長が４００〜７００ｎｍにおいて光の反射率を８０％以上とすることが可能となり、発光装置の発光効率を極めて高いものとすることができる。
【００３８】
また、厚さＷが１０ｍｍの枠状のセラミック基板を上記実施例と同様にして作製したところ、ピーク波長４００〜７００ｎｍにおける反射率は８０％以上であったが、極度に大型化となってしまい、発光素子収納用パッケージとしては不適当なもとなった。
【００３９】
なお、本発明は上述の実施の形態および実施例に限定されず、本発明の要旨を逸脱しない範囲内で種々の変更を施すことは何等差し支えない。
【００４０】
【発明の効果】
本発明の発光素子収納用パッケージは、白色のセラミックスから成る枠体は、内周面と外周面との間の厚みが０．８ｍｍ以上であり、かつ波長が４００乃至７００ｎｍの光の反射率が８０％以上であることから、枠体は発光素子が発する光を吸収することなく、枠体の表面で光を効率良く反射することができるので、発光素子が発する光を発光素子収納用パッケージの外部に効率良く放射することができる。また、枠体の内周面にメタライズ層および金属めっき層を被着しなくてもよいため、メタライズ層の剥離の問題が生じず、信頼性の高いものとなるとともに、簡易な構成のものを簡易な工程で低コストに製造できる。
【００４１】
本発明の発光装置は、上記本発明の発光素子収納用パッケージと、搭載部に搭載された発光素子と、発光素子を覆う透明樹脂とを具備したことにより、簡易な構成で信頼性が高く、発光効率がきわめて高い高性能のものとなる。
【図面の簡単な説明】
【図１】本発明の発光素子収納用パッケージについて実施の形態の一例を示す断面図である。
【図２】従来の発光素子収納用パッケージの断面図である。
【図３】本発明の発光素子収納用パッケージについて実施の形態の他の例を示す断面図である。
【符号の説明】
１：基体
１ａ：搭載部
２：枠体
３：発光素子[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a light emitting element housing package for housing a light emitting element and a light emitting device used for a display device or the like using a light emitting element such as a light emitting diode.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, a ceramic package has been used as a light emitting element housing package (hereinafter, also referred to as a package) for housing a light emitting element such as a light emitting diode. As shown in a cross-sectional view of FIG. 2, the conventional ceramic package has a mounting portion 11a formed of a conductor layer for mounting the light emitting element 13 at the center of the upper surface. And a substantially rectangular parallelepiped or substantially rectangular plate-shaped ceramic base 11 having a pair of metallized wiring conductors 14 derived therefrom, and a through-hole 12a which is laminated on the upper surface thereof and has a central portion for accommodating the light emitting element 13 therein. It is mainly composed of a square frame-shaped ceramic frame 12 (for example, see Patent Document 1 below).
[0003]
Then, the light emitting element 13 is fixed via a conductive bonding material on the mounting portion 11a to which the one metallized wiring conductor 14 on the upper surface of the base 11 is connected, and the electrode of the light emitting element 13 and the other metallized wiring conductor 14 are connected. A light emitting device is manufactured by electrically connecting via a bonding wire 16 and then filling the through hole 12a of the frame 12 with a transparent resin (not shown) and sealing the light emitting element 13. You. Thereby, the light emitted from the light emitting element 13 can be radiated outside the package (upward in FIG. 1).
[0004]
Since a large number of the light emitting devices are arranged and used so as to be adjacent to each other, in the ceramic package, the light emitted from the light emitting element 13 mounted on the mounting portion 11a emits light from the base 11 and the frame body. The base 11 and the frame 12 are made of black ceramics in order to effectively prevent the light of the adjacent light emitting devices from being mixed by passing through the light emitting device 12. Further, in order to reflect the light of the light emitting element 13 on the inner peripheral surface of the through hole 12a of the frame 12 and to emit the light above the package, a nickel (Ni) plating layer or gold is provided on the inner peripheral surface of the through hole 12a. (Au) A metal layer 16 composed of a metallized layer having a plating layer on the surface is deposited.
[0005]
[Patent Document 1]
JP-A-2002-232017
[Problems to be solved by the invention]
However, in the above-mentioned conventional package for housing a light emitting element, a metal layer 16 made of a metallized layer having a Ni plating layer or an Au plating layer on the surface is adhered to the inner peripheral surface of the through hole 12a of the frame body 12. In addition, there has been a problem that the step of applying the metallized layer is complicated.
[0007]
In addition, when heat generated by the light emitting element 13 or other external heat is applied to the portion where the metallized layer is applied, heat generated due to a difference in thermal expansion coefficient between the metallized layer and the inner peripheral surface of the frame 12. There is a problem that stress is generated and acts to peel off the metallized layer, and the metallized layer is peeled off.
[0008]
Therefore, the present invention has been completed in view of the above-mentioned conventional problems, and the object of the present invention is to eliminate the need for a metallized layer in which the formation process is complicated and a problem of peeling is caused. An object of the present invention is to make it possible to manufacture a light-emitting element housing package and a light-emitting device with extremely high luminous efficiency, which can radiate emitted light satisfactorily and uniformly and efficiently to the outside, in a simple process with high reliability and at low cost. .
[0009]
[Means for Solving the Problems]
The light-emitting element housing package of the present invention is joined to a substantially rectangular parallelepiped base made of white ceramics having a mounting part for mounting the light-emitting element on the upper surface, and to surround the mounting part on the upper surface of the base. A frame made of white ceramics, wherein the frame has a thickness between the inner peripheral surface and the outer peripheral surface of 0.8 mm or more, and has a reflectance of light having a wavelength of 400 to 700 nm. 80% or more.
[0010]
In the light-emitting element housing package of the present invention, the frame made of white ceramic has a thickness between the inner peripheral surface and the outer peripheral surface of 0.8 mm or more, and a reflectance of 400 to 700 nm wavelength light. Since it is 80% or more, the frame can efficiently reflect light on the surface of the frame without absorbing the light emitted from the light emitting element. It can be efficiently radiated to the outside. In addition, since it is not necessary to apply the metallized layer and the metal plating layer to the inner peripheral surface of the frame, the problem of peeling of the metallized layer does not occur, and a highly reliable one having a simple configuration can be obtained. It can be manufactured at a low cost with simple processes.
[0011]
A light emitting device according to the present invention includes the light emitting element housing package according to the present invention, a light emitting element mounted on the mounting portion, and a transparent resin covering the light emitting element.
[0012]
With the above configuration, the light emitting device of the present invention has high reliability with a simple configuration and high performance with extremely high luminous efficiency.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
The light emitting element housing package of the present invention will be described in detail below. FIG. 1 is a cross-sectional view showing an example of an embodiment of the package of the present invention, wherein 1 is a base made of white ceramics, 2 is a frame made of white ceramics, and mainly accommodates a light emitting element 3 with these. The package to be configured.
[0014]
The package according to the present invention includes a substantially rectangular parallelepiped base body 1 made of white ceramics having a mounting portion 1a for mounting the light emitting element 3 on the upper surface, and a white color joined to the upper surface of the base 1 so as to surround the mounting portion 1a. And a frame 2 made of ceramics having a thickness W (FIG. 1) between the inner peripheral surface and the outer peripheral surface of not less than 0.8 mm and a wavelength of 400 to 700 nm. The reflectance is 80% or more.
[0015]
The frame body 2 of the present invention is a substantially rectangular frame-shaped body made of a sintered body (ceramic) such as an aluminum oxide (Al 2 O 3 ) sintered body, an aluminum nitride (AlN) based sintered body, and the like. For example, when the frame 2 is made of an aluminum oxide sintered body, it is made of a ceramic such as SiO 2 —Al 2 O 3 —MgO—ZnO 2 —CaO.
[0016]
In order for the frame 2 to have a thickness W of 0.8 mm or more and reflectivity of light having a wavelength of 400 to 700 nm of 80% or more, the frame 2 must be made of SiO 2 —Al 2 O 3 —MgO—CaO. When it is made of a ceramic, the content of Al 2 O 3 is preferably 90 to 99% by weight, and the total content of SiO 2 , MgO and CaO is preferably 1 to 10% by weight. If the total content of SiO 2 , MgO, and CaO is less than 1% by weight, the sinterability of Al 2 O 3 becomes poor, and it becomes difficult to obtain sufficient hardness. If it exceeds 10% by weight, heat resistance and mechanical strength will be insufficient, and the thermal conductivity will decrease.
[0017]
In addition, SiO 2 is contained in ceramics to enhance the sinterability and thermal conductivity of ceramics, and MgO and CaO are contained in ceramics to enhance the sinterability and thermal conductivity of ceramics. 2 , MgO and CaO are each preferably contained in an amount of 0.01% by weight or more. Further, ZrO 2 may be contained in the ceramics in order to increase the density and mechanical strength of the ceramics. In this case, the content of ZrO 2 is preferably 0.01 to 10% by weight. If the content is less than 0.01% by weight, the effect of improving the density and mechanical strength of the ceramic is not sufficiently exhibited. If it exceeds 10% by weight, the electrical insulation will deteriorate. Further, the total content of SiO 2 , MgO, CaO and ZrO 2 is preferably not more than 10% by weight, because if it is too large, heat resistance and strength deteriorate.
[0018]
When the frame 2 is made of an aluminum nitride (AlN) sintered body, the frame 2 is made of an AlN-Er 2 O 3 type ceramic or the like, and the frame 2 has a thickness W of 0.8 mm or more and a wavelength of 400 to 700 nm. In order that the reflectance of light of the above is 80% or more, the content of Er 2 O 3 is preferably 1 to 10% by weight based on the total weight of the aluminum nitride sintered body. If the content of Er 2 O 3 is less than 1% by weight, the sinterability of AlN becomes poor, and it becomes difficult to obtain sufficient hardness. If it exceeds 10% by weight, heat resistance and mechanical strength are reduced, and thermal conductivity is lowered.
[0019]
The thickness W of the frame 2 is specified to be 0.8 mm or more. If the thickness W is less than 0.8 mm, the reflectance of the light emitting element 3 for light having a wavelength of 400 to 700 nm is less than 80%, and the light emitted by the light emitting element 3 It is difficult to efficiently reflect and radiate the light to the upper surface of the package. On the other hand, the thickness W of the frame 2 is preferably 10 mm or less, and if it exceeds 10 mm, the package becomes extremely large.
[0020]
If the frame 2 has a reflectance of less than 80% for light having a wavelength of 400 to 700 nm, it is difficult for the light emitted from the light emitting element 3 to be reflected well to the outside, and the light emitting element 3 emits light. The risk of light passing through the frame 2 and mixing with light of adjacent light emitting devices is increased.
[0021]
The frame 2 of the present invention is laminated on the upper surface of the base 1, sintered and integrated, and joined. The frame 2 has a through hole 2a having a substantially circular or substantially square cross section for accommodating the light emitting element 3 in the center thereof, and the light emitting element mounted on the mounting portion 1a in the through hole 2a. 3 are accommodated.
[0022]
The angle between the inner peripheral surface of the through hole 2a of the frame 2 and the upper surface of the base 1 is set to 35 to 70 ° so that the inner peripheral surface of the through hole 2a gradually widens outward (upward in FIG. 1). In this case, it is preferable that the light be reflected on the inner peripheral surface of the through hole 2a of the frame 2 to be more efficiently radiated to the outside of the package. If the angle is less than 35 °, it is difficult to form the inner peripheral surface of the through hole 2a stably and efficiently at such an angle, and the package becomes extremely large. If it exceeds 70 °, it becomes difficult to satisfactorily reflect light emitted by the light emitting element 3 housed in the through hole 2a to the outside.
[0023]
Further, it is preferable that the cross-sectional shape of the through hole 2a is circular or elliptical. In this case, there is an advantage that the light emitted by the light emitting element 3 accommodated in the through hole 2a can be reflected uniformly in all directions by the inner peripheral surface of the through hole 2a and radiated extremely uniformly to the outside.
[0024]
The base 1 of the present invention is made of ceramics having substantially the same composition as the frame 2, is a support for supporting the light emitting element 3, and has a mounting portion 1a formed of a conductor layer for mounting the light emitting element 3 on its upper surface. The mounting portion 1a is formed of a metallized layer of a metal powder such as tungsten (W), molybdenum (Mo), copper (Cu), silver (Ag), or the like.
[0025]
The base 1 has a metallized wiring conductor 4a extending from the mounting portion 1a to the lower surface and a metallized wiring conductor 4b extended from the periphery of the mounting portion 1a to the lower surface. The metallized wiring conductors 4a and 4b are made of a metallized layer of a metal powder such as W or Mo, and are conductive paths for electrically connecting the light emitting element 3 housed in the package to the outside. The light-emitting element 3 such as a light-emitting diode is fixed to the mounting portion 1a with a conductive bonding material such as a gold (Au) -silicon (Si) alloy or an Ag-epoxy resin, and the mounting portion 1a of the metallized wiring conductor 4b. The electrode of the light emitting element 3 is electrically connected to the peripheral portion through the bonding wire 5.
[0026]
It is to be noted that a metal having excellent corrosion resistance such as nickel (Ni), gold (Au), or Ag having a thickness of about 1 to 20 μm is applied to the exposed surfaces of the metallized wiring conductors 4a and 4b and the mounting portion 1a. It is possible to effectively prevent the metallized wiring conductors 4a and 4b and the mounting portion 1a from being oxidized and corroded, to fix the mounting portion 1a to the light emitting element 3 and to join the metalized wiring conductor 4b and the bonding wire 5. Can be strengthened. Therefore, on the exposed surfaces of the metallized wiring conductors 4a, 4b and the mounting portion 1a, a Ni plating layer having a thickness of about 1 to 10 μm and an Au plating layer or an Ag plating layer having a thickness of about 0.1 to 3 μm are provided by electrolytic plating. More preferably, they are sequentially applied by a method or an electroless plating method.
[0027]
Thus, in the package of the present invention, the frame 2 made of white ceramic has a thickness between the inner peripheral surface and the outer peripheral surface of 0.8 mm or more, and has a reflectance of 80% for light having a wavelength of 400 to 700 nm. As described above, since the frame 2 can efficiently reflect light on the surface of the frame 2 without absorbing the light of the light emitting element 3, the light of the light emitting element 3 can be efficiently transmitted to the outside of the package. Can radiate. Further, since it is not necessary to apply the metallized layer and the metal plating layer on the inner peripheral surface of the frame 2, a problem of peeling of the metallized layer does not occur, and the metallized layer has high reliability and has a simple configuration. Can be manufactured in a simple process at low cost.
[0028]
Further, the light emitting device of the present invention includes the above light emitting element housing package of the present invention, the light emitting element 3 mounted on the mounting portion 1a, and a transparent resin covering the light emitting element 3. The transparent resin covering the light emitting element 3 may be provided so as to cover only the exposed surface of the light emitting element 3 or may be filled inside the frame 2 so as to cover the light emitting element 3. Further, a light-transmitting lid made of glass, sapphire, quartz, or a light-transmitting resin may be bonded to the upper surface of the frame 2. In addition, since the light emitting device of the present invention is a small device that accommodates the light emitting elements 3 such as light emitting diodes, it is more efficient to cover the light emitting elements 3 with a transparent resin than to individually cover them. This is advantageous in terms of fixing the position of the internal bonding wires 5 and the like and preventing corrosion of each conductor layer.
[0029]
Note that the present invention is not limited to the above-described embodiment, and various changes may be made without departing from the scope of the present invention. For example, as shown in the cross-sectional view of the package of FIG. 3, the light emitting element 3 is directly mounted on the upper surface of the base 1 without forming the mounting portion 1a as a conductor layer, and the electrodes of the light emitting element 3 are electrically connected around the light emitting element 3. May be formed. In this case, the light emitting element 3 is mounted on the mounting portion 1a, and the electrodes of the light emitting element 3 are electrically connected to the metallized wiring conductors 4a, 4b via the bonding wires 5a, 5b and the like. Further, a plurality of light emitting elements 3 may be mounted, or a plurality of wiring layers may be formed. ,
[0030]
【Example】
An embodiment of the light emitting element storage package of the present invention will be described below.
[0031]
The reflectance of light having a wavelength of 350 to 750 nm with respect to various thicknesses W of the frame 2 was evaluated as follows. First, SiO 2 —Al containing 1.53% by weight of SiO 2 , 96.25% by weight of Al 2 O 3 , 1.99% by weight of MgO, 0.20% by weight of CaO, and 0.03% by weight of ZrO 2 Ceramic green sheets having a diameter of 50 mm and six thicknesses (see Table 1 below) made of 2 O 3 —MgO—ZrO 2 —CaO-based white ceramics are prepared, and fired at a high temperature of 1600 ° C. Was performed to produce ceramic substrates for evaluation (Sample Nos. 1 to 6).
[0032]
Each of these six types of ceramic substrates is irradiated with nine types of light having a peak wavelength of 350 nm to 750 nm (see Table 1 below), and the reflectance of the light is measured with a spectral colorimeter (“CM-CM” manufactured by Minolta Co., Ltd.). 3700d "). Table 1 shows the results.
[0033]
[Table 1]
Figure 2004207678
[0034]
From Table 1, it can be seen that Sample No. having a thickness of 0.8 mm or more was used. In Nos. 4 to 6, the reflectance was 80% or more when the peak wavelength of light was 400 to 700 nm (shown by ○ in the table).
[0035]
Sample No. having a thickness of less than 0.8 mm. In the cases of 1 and 2, the reflectances were all less than 80% when the peak wavelength of the light was 400 to 700 nm (indicated by x in the table).
[0036]
Sample No. In No. 3, the reflectance was 80% or more only when the peak wavelength of the light was 450 to 650 nm, and it was not possible to effectively reflect light having a peak wavelength of 400 to 700 nm capable of providing a clear full-color display (in the table). X).
[0037]
From the above, it was found that the thickness W of the frame 2 needs to be 0.8 mm or more. Thereby, the light reflectance can be 80% or more when the peak wavelength of the light is 400 to 700 nm, and the light emitting efficiency of the light emitting device can be extremely high.
[0038]
When a frame-shaped ceramic substrate having a thickness W of 10 mm was produced in the same manner as in the above example, the reflectance at a peak wavelength of 400 to 700 nm was 80% or more, but the size became extremely large. However, it is unsuitable as a package for housing a light emitting element.
[0039]
The present invention is not limited to the above-described embodiments and examples, and various changes may be made without departing from the gist of the present invention.
[0040]
【The invention's effect】
In the light-emitting element housing package of the present invention, the frame made of white ceramic has a thickness between the inner peripheral surface and the outer peripheral surface of 0.8 mm or more, and a reflectance of 400 to 700 nm wavelength light. Since it is 80% or more, the frame can efficiently reflect light on the surface of the frame without absorbing the light emitted from the light emitting element. It can be efficiently radiated to the outside. In addition, since it is not necessary to apply the metallized layer and the metal plating layer to the inner peripheral surface of the frame, the problem of peeling of the metallized layer does not occur, and a highly reliable one having a simple configuration can be obtained. It can be manufactured at a low cost with a simple process.
[0041]
The light-emitting device of the present invention includes the light-emitting element housing package of the present invention, a light-emitting element mounted on a mounting portion, and a transparent resin that covers the light-emitting element. High performance with extremely high luminous efficiency.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating an example of an embodiment of a light emitting element housing package of the present invention.
FIG. 2 is a cross-sectional view of a conventional light emitting element storage package.
FIG. 3 is a cross-sectional view showing another example of the embodiment of the light emitting element housing package of the present invention.
[Explanation of symbols]
1: base 1a: mounting part 2: frame 3: light emitting element

Claims (2)

上面に発光素子を搭載するための搭載部を有する白色のセラミックスから成る略直方体の基体と、該基体の上面に前記搭載部を囲繞するように接合された白色のセラミックスから成る枠体とを具備しており、前記枠体は、内周面と外周面との間の厚みが０．８ｍｍ以上であり、かつ波長が４００乃至７００ｎｍの光の反射率が８０％以上であることを特徴とする発光素子収納用パッケージ。A substantially rectangular parallelepiped base made of white ceramic having a mounting portion for mounting a light emitting element on an upper surface, and a frame made of white ceramic joined to the upper surface of the base so as to surround the mounting portion. The frame body has a thickness between the inner peripheral surface and the outer peripheral surface of 0.8 mm or more, and has a reflectance of 80% or more for light having a wavelength of 400 to 700 nm. Light emitting element storage package. 請求項１記載の発光素子収納用パッケージと、前記搭載部に搭載された発光素子と、該発光素子を覆う透明樹脂とを具備したことを特徴とする発光装置。A light emitting device, comprising: the light emitting element storage package according to claim 1; a light emitting element mounted on the mounting portion; and a transparent resin covering the light emitting element.
JP2003204153A 2002-10-30 2003-07-30 Package for light emitting element and light emitting device Pending JP2004207678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003204153A JP2004207678A (en) 2002-10-30 2003-07-30 Package for light emitting element and light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002315753 2002-10-30
JP2003204153A JP2004207678A (en) 2002-10-30 2003-07-30 Package for light emitting element and light emitting device

Publications (1)

Publication Number Publication Date
JP2004207678A true JP2004207678A (en) 2004-07-22

Family

ID=32828238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003204153A Pending JP2004207678A (en) 2002-10-30 2003-07-30 Package for light emitting element and light emitting device

Country Status (1)

Country Link
JP (1) JP2004207678A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006041230A (en) * 2004-07-28 2006-02-09 Kyocera Corp Light emitting devices and wiring board therefor
WO2006013899A1 (en) * 2004-08-03 2006-02-09 Tokuyama Corporation Package for storing light emitting element and method for producing package for storing light emitting element
WO2006019090A1 (en) * 2004-08-18 2006-02-23 Tokuyama Corporation Ceramic substrate for mounting light-emitting device and method for producing same
JP2006066409A (en) * 2004-07-28 2006-03-09 Kyocera Corp Wiring board for light emitting element, manufacturing method thereof and light emitting device
JP2006093565A (en) * 2004-09-27 2006-04-06 Kyocera Corp Wiring board for light emitting element, light emitting device and method for manufacturing it
JP2006147999A (en) * 2004-11-24 2006-06-08 Kyocera Corp Wiring board for light emitting device, and light emitting equipment
JP2006156447A (en) * 2004-11-25 2006-06-15 Kyocera Corp Wiring board for light emitting element, light emitting device and its manufacturing method
WO2006104061A1 (en) * 2005-03-29 2006-10-05 Kyocera Corporation Reflective member, light-emitting device using same and illuminating device
JP2006344810A (en) * 2005-06-09 2006-12-21 Sumitomo Metal Electronics Devices Inc Aluminum sintered body for housing light emitting device
WO2007034955A1 (en) * 2005-09-26 2007-03-29 Tokuyama Corporation Sintered ceramics for mounting light emitting element
KR100735325B1 (en) 2006-04-17 2007-07-04 삼성전기주식회사 Light emitting diode package and fabrication method thereof
KR100813633B1 (en) 2006-07-11 2008-03-14 알티전자 주식회사 LED package of side view type
KR100917721B1 (en) * 2006-11-29 2009-09-15 교리츠 엘렉스 가부시키가이샤 Method for manufacturing package for light emitting diode
WO2011013808A1 (en) * 2009-07-31 2011-02-03 京セラ株式会社 Ceramic substrate for mounting luminescent element
CN102315208A (en) * 2011-09-09 2012-01-11 福建省万邦光电科技有限公司 LED (Light-Emitting Diode) light-source packaging structure with inlaid ceramic plate

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006066409A (en) * 2004-07-28 2006-03-09 Kyocera Corp Wiring board for light emitting element, manufacturing method thereof and light emitting device
JP2006041230A (en) * 2004-07-28 2006-02-09 Kyocera Corp Light emitting devices and wiring board therefor
JPWO2006013899A1 (en) * 2004-08-03 2008-05-01 株式会社トクヤマ Light emitting element storage package and method for manufacturing light emitting element storage package
WO2006013899A1 (en) * 2004-08-03 2006-02-09 Tokuyama Corporation Package for storing light emitting element and method for producing package for storing light emitting element
JP5094118B2 (en) * 2004-08-03 2012-12-12 株式会社トクヤマ Light emitting element storage package and method for manufacturing light emitting element storage package
US7737461B2 (en) 2004-08-03 2010-06-15 Tokuyama Corporation Package for storing light emitting element and method for producing package for storing light emitting element
KR100865701B1 (en) * 2004-08-03 2008-10-29 가부시끼가이샤 도꾸야마 Package for storing light emitting element and method for producing package for storing light emitting element
WO2006019090A1 (en) * 2004-08-18 2006-02-23 Tokuyama Corporation Ceramic substrate for mounting light-emitting device and method for producing same
US7825422B2 (en) 2004-08-18 2010-11-02 Tokuyama Corporation Ceramic substrate for mounting a light emitting element and method for manufacturing the same
JP2006093565A (en) * 2004-09-27 2006-04-06 Kyocera Corp Wiring board for light emitting element, light emitting device and method for manufacturing it
JP2006147999A (en) * 2004-11-24 2006-06-08 Kyocera Corp Wiring board for light emitting device, and light emitting equipment
JP2006156447A (en) * 2004-11-25 2006-06-15 Kyocera Corp Wiring board for light emitting element, light emitting device and its manufacturing method
JP2011191785A (en) * 2005-03-29 2011-09-29 Kyocera Corp Reflective member, light-emitting device using the same and illuminating device
US8449973B2 (en) 2005-03-29 2013-05-28 Kyocera Corporation Reflective member, light-emitting device using same and illuminating device
WO2006104061A1 (en) * 2005-03-29 2006-10-05 Kyocera Corporation Reflective member, light-emitting device using same and illuminating device
JP4847954B2 (en) * 2005-03-29 2011-12-28 京セラ株式会社 Reflecting member, light emitting device and lighting device using the same
JP2011180618A (en) * 2005-03-29 2011-09-15 Kyocera Corp Reflective member, manufacturing method of reflective member, light-emitting device and illuminating device
JP2006344810A (en) * 2005-06-09 2006-12-21 Sumitomo Metal Electronics Devices Inc Aluminum sintered body for housing light emitting device
JPWO2007034955A1 (en) * 2005-09-26 2009-04-02 株式会社トクヤマ Ceramic sintered body for mounting light-emitting elements
KR100963178B1 (en) * 2005-09-26 2010-06-14 가부시끼가이샤 도꾸야마 Sintered ceramics for mounting light emitting element
WO2007034955A1 (en) * 2005-09-26 2007-03-29 Tokuyama Corporation Sintered ceramics for mounting light emitting element
KR100735325B1 (en) 2006-04-17 2007-07-04 삼성전기주식회사 Light emitting diode package and fabrication method thereof
KR100813633B1 (en) 2006-07-11 2008-03-14 알티전자 주식회사 LED package of side view type
KR100917721B1 (en) * 2006-11-29 2009-09-15 교리츠 엘렉스 가부시키가이샤 Method for manufacturing package for light emitting diode
WO2011013808A1 (en) * 2009-07-31 2011-02-03 京セラ株式会社 Ceramic substrate for mounting luminescent element
JP4902020B2 (en) * 2009-07-31 2012-03-21 京セラ株式会社 Ceramic substrate for mounting light-emitting elements
JP2012067008A (en) * 2009-07-31 2012-04-05 Kyocera Corp Ceramic substrate for mounting light-emitting element
CN102471171A (en) * 2009-07-31 2012-05-23 京瓷株式会社 Ceramic substrate for mounting luminescent element
CN102315208A (en) * 2011-09-09 2012-01-11 福建省万邦光电科技有限公司 LED (Light-Emitting Diode) light-source packaging structure with inlaid ceramic plate

Similar Documents

Publication Publication Date Title
JP3921200B2 (en) Light emitting device
JP2005191197A (en) Light emitting device
JP2004207678A (en) Package for light emitting element and light emitting device
JP2004296575A (en) Package for housing light emitting element, and light emitting device
JP2004152952A (en) Package for storing light emitting element and light emitting device
JP2004228549A (en) Package for housing light emitting element and light emitting device
JP4132038B2 (en) Light emitting device
JP2005191111A (en) Package for storing light emitting element, and light emitting device
JP4163932B2 (en) Light emitting element storage package and light emitting device
JP5153402B2 (en) Light emitting element storage package and light emitting device
JP2004207672A (en) Package for light emitting element and light emitting device
JP2004327632A (en) Package for housing light emitting element and light emitting device
JP4129169B2 (en) Light emitting element storage package and light emitting device
JP2004172577A (en) Package for housing light-emitting element and light-emitting device
JP2004207542A (en) Package for storing light emitting element and light emitting device
JP4295525B2 (en) Light emitting element storage package and light emitting device
JP2005174998A (en) Package for storing light emitting element and light emitting device
JP4261925B2 (en) Light emitting element storage package and light emitting device
JP2005243738A (en) Accommodating light-emitting device and package therefor
JP2005159090A (en) Light emitting device
JP2009135535A (en) Multipiece substrate, package and light emitting device
JP4206334B2 (en) Light emitting device
JP4129173B2 (en) Light emitting element storage package and light emitting device
JP2006066630A (en) Wiring board, electric device, and light emitting device
JP2007173875A (en) Light emitting device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060706

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080129

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080324

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080527