JP5919210B2 - 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム - Google Patents

基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム Download PDF

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JP5919210B2
JP5919210B2 JP2013046512A JP2013046512A JP5919210B2 JP 5919210 B2 JP5919210 B2 JP 5919210B2 JP 2013046512 A JP2013046512 A JP 2013046512A JP 2013046512 A JP2013046512 A JP 2013046512A JP 5919210 B2 JP5919210 B2 JP 5919210B2
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resist pattern
resist
polymer
block copolymer
wafer
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Japanese (ja)
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JP2014082439A5 (enExample
JP2014082439A (ja
Inventor
村松　誠
誠 村松
北野　高広
高広 北野
忠利 冨田
忠利 冨田
啓士 田内
啓士 田内
聡一郎 岡田
聡一郎 岡田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2013046512A priority Critical patent/JP5919210B2/ja
Priority to TW102133490A priority patent/TWI549161B/zh
Priority to KR1020157006644A priority patent/KR101932804B1/ko
Priority to US14/430,988 priority patent/US9748101B2/en
Priority to PCT/JP2013/076288 priority patent/WO2014051063A1/ja
Publication of JP2014082439A publication Critical patent/JP2014082439A/ja
Publication of JP2014082439A5 publication Critical patent/JP2014082439A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32889—Connection or combination with other apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2013046512A 2012-09-28 2013-03-08 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム Active JP5919210B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013046512A JP5919210B2 (ja) 2012-09-28 2013-03-08 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
TW102133490A TWI549161B (zh) 2012-09-28 2013-09-16 基板處理方法、電腦程式產品、電腦記憶媒體及基板處理系統
KR1020157006644A KR101932804B1 (ko) 2012-09-28 2013-09-27 기판 처리 방법, 컴퓨터 기억 매체 및 기판 처리 시스템
US14/430,988 US9748101B2 (en) 2012-09-28 2013-09-27 Substrate treatment method, computer storage medium, and substrate treatment system
PCT/JP2013/076288 WO2014051063A1 (ja) 2012-09-28 2013-09-27 基板処理方法、コンピュータ記憶媒体及び基板処理システム

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012215674 2012-09-28
JP2012215674 2012-09-28
JP2013046512A JP5919210B2 (ja) 2012-09-28 2013-03-08 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム

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JP2014082439A JP2014082439A (ja) 2014-05-08
JP2014082439A5 JP2014082439A5 (enExample) 2015-04-16
JP5919210B2 true JP5919210B2 (ja) 2016-05-18

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US (1) US9748101B2 (enExample)
JP (1) JP5919210B2 (enExample)
KR (1) KR101932804B1 (enExample)
TW (1) TWI549161B (enExample)
WO (1) WO2014051063A1 (enExample)

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JP6023010B2 (ja) * 2013-06-26 2016-11-09 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP6177723B2 (ja) * 2014-04-25 2017-08-09 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP6235974B2 (ja) * 2014-09-24 2017-11-22 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP6352230B2 (ja) * 2015-10-09 2018-07-04 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記録媒体
TWI723052B (zh) * 2015-10-23 2021-04-01 日商東京威力科創股份有限公司 基板處理方法、程式及電腦記憶媒體
KR102637883B1 (ko) * 2015-12-11 2024-02-19 아이엠이씨 브이제트더블유 기판 상의 패턴 형성 방법, 그 방법에 관련된 반도체 장치 및 이용
FR3066497A1 (fr) * 2017-05-22 2018-11-23 Arkema France Procede pour l'assemblage de copolymeres a blocs par controle de l'energie de surface d'un materiau a l'aide d'un traitement reducteur
KR20190015666A (ko) * 2017-08-04 2019-02-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102772974B1 (ko) * 2018-08-23 2025-02-27 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 시스템
KR102631793B1 (ko) * 2018-11-08 2024-02-01 삼성전자주식회사 약액 공급 구조물 및 이를 구비하는 현상장치

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JP2004233954A (ja) * 2002-12-02 2004-08-19 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法およびレジストパターン
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JP4673266B2 (ja) 2006-08-03 2011-04-20 日本電信電話株式会社 パターン形成方法及びモールド
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JP2015115599A (ja) * 2013-12-13 2015-06-22 株式会社東芝 パターン形成方法

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Publication number Publication date
WO2014051063A1 (ja) 2014-04-03
JP2014082439A (ja) 2014-05-08
US9748101B2 (en) 2017-08-29
KR101932804B1 (ko) 2018-12-27
KR20150058209A (ko) 2015-05-28
US20150255271A1 (en) 2015-09-10
TW201421537A (zh) 2014-06-01
TWI549161B (zh) 2016-09-11

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