JP6678183B2 - 基板処理方法及びコンピュータ記憶媒体 - Google Patents
基板処理方法及びコンピュータ記憶媒体 Download PDFInfo
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- JP6678183B2 JP6678183B2 JP2017545788A JP2017545788A JP6678183B2 JP 6678183 B2 JP6678183 B2 JP 6678183B2 JP 2017545788 A JP2017545788 A JP 2017545788A JP 2017545788 A JP2017545788 A JP 2017545788A JP 6678183 B2 JP6678183 B2 JP 6678183B2
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- 238000003672 processing method Methods 0.000 title claims description 25
- 238000003860 storage Methods 0.000 title claims description 7
- 229920001400 block copolymer Polymers 0.000 claims description 94
- 238000012545 processing Methods 0.000 claims description 81
- 229920001600 hydrophobic polymer Polymers 0.000 claims description 70
- 229920001477 hydrophilic polymer Polymers 0.000 claims description 56
- 238000000576 coating method Methods 0.000 claims description 50
- 239000011248 coating agent Substances 0.000 claims description 49
- 229920000642 polymer Polymers 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 25
- 230000009467 reduction Effects 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 238000000926 separation method Methods 0.000 claims description 14
- 239000012298 atmosphere Substances 0.000 claims description 13
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 9
- 229910001882 dioxygen Inorganic materials 0.000 claims description 9
- 238000009832 plasma treatment Methods 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 138
- 238000012546 transfer Methods 0.000 description 59
- 238000010438 heat treatment Methods 0.000 description 22
- 230000007935 neutral effect Effects 0.000 description 19
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- 230000001678 irradiating effect Effects 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
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- 239000003495 polar organic solvent Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
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- 229920005604 random copolymer Polymers 0.000 description 1
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Description
本願は、2015年10月23日に日本国に出願された特願2015−208718号に基づき、優先権を主張し、その内容をここに援用する。
所定の凹凸パターンが形成された基板上に前記ブロック共重合体を塗布して当該ブロック共重合体の塗布膜を形成するブロック共重合体塗布工程と、前記ブロック共重合体を前記親水性ポリマーと前記疎水性ポリマーに相分離させるポリマー分離工程と、前記相分離したブロック共重合体から、前記親水性ポリマーを選択的に除去するポリマー除去工程と、前記ブロック共重合体塗布工程後であって、前記ポリマー除去工程前に、前記ブロック共重合体の塗布膜の膜厚を低減する膜厚低減工程と、を有し、前記ポリマー除去工程において親水性ポリマーを選択的に除去した後に、前記膜厚低減工程によって膜厚が低減した前記疎水性ポリマーをマスクとして、前記基板に対してエッチング処理を行う。
30 現像装置
31 有機溶剤供給装置
32 反射防止膜形成装置
33 中性層形成装置
34 レジスト塗布装置
35 塗布膜形成装置
36 レジスト除去装置
37 ブロック共重合体塗布装置
40 熱処理装置
41 紫外線照射装置
42 アドヒージョン装置
43 周辺露光装置
44 ポリマー分離装置
300 制御部
400 反射防止膜
401 中性層
402 レジスト膜
403 レジストパターン
404 ポリスチレン膜
410 ブロック共重合体
411 親水性ポリマー
412 疎水性ポリマー
W ウェハ
Claims (10)
- 親水性ポリマーと疎水性ポリマーとを含むブロック共重合体を用いて、基板を処理する基板処理方法であって、
所定の凹凸パターンが形成された基板上に前記ブロック共重合体を塗布して当該ブロック共重合体の塗布膜を形成するブロック共重合体塗布工程と、
前記ブロック共重合体を前記親水性ポリマーと前記疎水性ポリマーに相分離させるポリマー分離工程と、
前記相分離したブロック共重合体から、前記親水性ポリマーを選択的に除去するポリマー除去工程と、
前記ブロック共重合体塗布工程後であって、前記ポリマー除去工程前に、前記ブロック共重合体の塗布膜の膜厚を低減する膜厚低減工程と、を有し、
前記ポリマー除去工程において親水性ポリマーを選択的に除去した後に、前記膜厚低減工程によって膜厚が低減した前記疎水性ポリマーをマスクとして、前記基板に対してエッチング処理を行う、基板処理方法。 - 請求項1に記載の基板処理方法において、
膜厚低減工程では、酸素ガスを含有した雰囲気中の基板に対して紫外線を照射し、前記ブロック共重合体の塗布膜が形成された基板を活性酸素雰囲気に曝すことで、当該ブロック共重合体の塗布膜の膜厚を低減する、基板処理方法。 - 請求項1に記載の基板処理方法において、
前記膜厚低減工程では、
酸素ガスを含有した雰囲気中の基板に対して紫外線を照射し、前記ブロック共重合体の塗布膜が形成された基板を活性酸素雰囲気に曝し、
その後、前記ブロック共重合体の塗布膜が形成された基板に対して酸素ガス含有プラズマによるプラズマ処理を行うことで、当該ブロック共重合体の塗布膜の膜厚を低減する、基板処理方法。 - 請求項2に記載の基板処理方法において、
前記ブロック共重合体の塗布膜が形成された基板を活性酸素雰囲気に曝しながら、前記基板を所定の温度で加熱処理する、基板処理方法。 - 請求項3に記載の基板処理方法において、
前記ブロック共重合体の塗布膜が形成された基板を活性酸素雰囲気に曝しながら、前記基板を所定の温度で加熱処理する、基板処理方法。 - 請求項1に記載の基板処理方法において、
前記膜厚低減工程では、前記ブロック共重合体の塗布膜が形成された基板に対して酸素ガス含有プラズマによるプラズマ処理を行うことで、当該ブロック共重合体の塗布膜の膜厚を低減する、基板処理方法。 - 請求項1に記載の基板処理方法において、
前記膜厚低減工程では、前記ブロック共重合体の塗布膜の膜厚が、前記ポリマー分離工程により相分離する前記親水性ポリマーと前記疎水性ポリマーとの間のピッチの半分以下まで低減する、基板処理方法。 - 請求項1に記載の基板処理方法において、
前記膜厚低減工程では、前記基板上に形成された前記所定の凹凸パターンにおける凸部の上面よりも上方の前記ブロック共重合体の塗布膜が除去される、基板処理方法。 - 請求項1に記載の基板処理方法において、
前記膜厚低減工程は、前記ポリマー分離工程後であって、前記ポリマー除去工程前に行われる、基板処理方法 - 親水性ポリマーと疎水性ポリマーとを含むブロック共重合体を用いて、基板を処理する基板処理方法を基板処理システムによって実行させるように、当該基板処理システムを制御する制御部のコンピュータ上で動作するプログラムを格納した読み取り可能なコンピュータ記憶媒体であって、
前記基板処理方法は、
所定の凹凸パターンが形成された基板上に前記ブロック共重合体を塗布して当該ブロック共重合体の塗布膜を形成するするブロック共重合体塗布工程と、
前記ブロック共重合体を前記親水性ポリマーと前記疎水性ポリマーに相分離させるポリマー分離工程と、
前記相分離したブロック共重合体から、前記親水性ポリマーを選択的に除去するポリマー除去工程と、
前記ブロック共重合体塗布工程後であって、前記ポリマー除去工程前に、前記ブロック共重合体の塗布膜の膜厚を低減する膜厚低減工程と、を有し、
前記ポリマー除去工程において親水性ポリマーを選択的に除去した後に、前記膜厚低減工程によって膜厚が低減した前記疎水性ポリマーをマスクとして、前記基板に対してエッチング処理を行う、コンピュータ記憶媒体。
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