TWI549161B - 基板處理方法、電腦程式產品、電腦記憶媒體及基板處理系統 - Google Patents

基板處理方法、電腦程式產品、電腦記憶媒體及基板處理系統 Download PDF

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Publication number
TWI549161B
TWI549161B TW102133490A TW102133490A TWI549161B TW I549161 B TWI549161 B TW I549161B TW 102133490 A TW102133490 A TW 102133490A TW 102133490 A TW102133490 A TW 102133490A TW I549161 B TWI549161 B TW I549161B
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TW
Taiwan
Prior art keywords
photoresist pattern
photoresist
polymer
block copolymer
wafer
Prior art date
Application number
TW102133490A
Other languages
English (en)
Chinese (zh)
Other versions
TW201421537A (zh
Inventor
村松誠
北野高廣
冨田忠利
田內啓士
岡田聰一郎
Original Assignee
東京威力科創股份有限公司
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Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201421537A publication Critical patent/TW201421537A/zh
Application granted granted Critical
Publication of TWI549161B publication Critical patent/TWI549161B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32889—Connection or combination with other apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW102133490A 2012-09-28 2013-09-16 基板處理方法、電腦程式產品、電腦記憶媒體及基板處理系統 TWI549161B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012215674 2012-09-28
JP2013046512A JP5919210B2 (ja) 2012-09-28 2013-03-08 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム

Publications (2)

Publication Number Publication Date
TW201421537A TW201421537A (zh) 2014-06-01
TWI549161B true TWI549161B (zh) 2016-09-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW102133490A TWI549161B (zh) 2012-09-28 2013-09-16 基板處理方法、電腦程式產品、電腦記憶媒體及基板處理系統

Country Status (5)

Country Link
US (1) US9748101B2 (enExample)
JP (1) JP5919210B2 (enExample)
KR (1) KR101932804B1 (enExample)
TW (1) TWI549161B (enExample)
WO (1) WO2014051063A1 (enExample)

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JP6023010B2 (ja) * 2013-06-26 2016-11-09 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP6177723B2 (ja) * 2014-04-25 2017-08-09 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP6235974B2 (ja) * 2014-09-24 2017-11-22 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP6352230B2 (ja) * 2015-10-09 2018-07-04 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記録媒体
TWI723052B (zh) * 2015-10-23 2021-04-01 日商東京威力科創股份有限公司 基板處理方法、程式及電腦記憶媒體
KR102637883B1 (ko) * 2015-12-11 2024-02-19 아이엠이씨 브이제트더블유 기판 상의 패턴 형성 방법, 그 방법에 관련된 반도체 장치 및 이용
FR3066497A1 (fr) * 2017-05-22 2018-11-23 Arkema France Procede pour l'assemblage de copolymeres a blocs par controle de l'energie de surface d'un materiau a l'aide d'un traitement reducteur
KR20190015666A (ko) * 2017-08-04 2019-02-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102772974B1 (ko) * 2018-08-23 2025-02-27 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 시스템
KR102631793B1 (ko) * 2018-11-08 2024-02-01 삼성전자주식회사 약액 공급 구조물 및 이를 구비하는 현상장치

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TW201140244A (en) * 2010-03-25 2011-11-16 Fujifilm Corp Pattern forming method and resist composition
JP2011215333A (ja) * 2010-03-31 2011-10-27 Fujifilm Corp パターン形成方法及びレジスト組成物
JP2012061531A (ja) * 2010-09-14 2012-03-29 Tokyo Ohka Kogyo Co Ltd ブロックコポリマーを含む層のパターン形成方法

Also Published As

Publication number Publication date
WO2014051063A1 (ja) 2014-04-03
JP5919210B2 (ja) 2016-05-18
JP2014082439A (ja) 2014-05-08
US9748101B2 (en) 2017-08-29
KR101932804B1 (ko) 2018-12-27
KR20150058209A (ko) 2015-05-28
US20150255271A1 (en) 2015-09-10
TW201421537A (zh) 2014-06-01

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