JP5912140B2 - 多レベルシャワーヘッド設計 - Google Patents
多レベルシャワーヘッド設計 Download PDFInfo
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- JP5912140B2 JP5912140B2 JP2013558006A JP2013558006A JP5912140B2 JP 5912140 B2 JP5912140 B2 JP 5912140B2 JP 2013558006 A JP2013558006 A JP 2013558006A JP 2013558006 A JP2013558006 A JP 2013558006A JP 5912140 B2 JP5912140 B2 JP 5912140B2
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 4
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 229920009441 perflouroethylene propylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
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- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
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- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
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- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
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- 229910000423 chromium oxide Inorganic materials 0.000 description 1
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- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- JXSUUUWRUITOQZ-UHFFFAOYSA-N oxygen(2-);yttrium(3+);zirconium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Y+3].[Y+3].[Zr+4].[Zr+4] JXSUUUWRUITOQZ-UHFFFAOYSA-N 0.000 description 1
- 239000010702 perfluoropolyether Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000131 polyvinylidene Polymers 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Description
Claims (12)
- 第1のプレートと、
ガスマニホルドを形成するために前記第1のプレートに結合される第2のプレートと、
前記第2のプレートに結合され、その中に配置された1つまたは複数の温度制御チャネルを有する第3のプレートであり、前記第3のプレートが、それを貫通して形成された第1の複数のガス通路および第2の複数のガス通路を有する、前記第3のプレートと、
前記第2のプレートと前記第3のプレートとの間に配置された第4のプレートであり、前記第4のプレートが、その中に形成され、前記第3のプレートの前記第2の複数のガス通路に流体的に結合される複数のチャネルを有し、前記第4のプレートが、その中を貫通して形成され、前記ガスマニホルドを前記第3のプレートの前記第1の複数のガス通路に流体的に結合させる複数のガス通路を有する、前記第4のプレートと
を含み、
前記第3のプレートが第6のプレートに結合された第5のプレートを含み、第5のプレートと第6のプレートとの間に単一の温度制御チャネルが配置されている、シャワーヘッドアセンブリ。 - 第1のプレートと、
ガスマニホルドを形成するために前記第1のプレートに結合される第2のプレートと、
前記第2のプレートに結合され、その中に配置された1つまたは複数の温度制御チャネルを有する第3のプレートであり、前記第3のプレートが、それを貫通して形成された第1の複数のガス通路および第2の複数のガス通路を有する、前記第3のプレートと、
前記第2のプレートと前記第3のプレートとの間に配置された第4のプレートであり、前記第4のプレートが、その中に形成され、前記第3のプレートの前記第2の複数のガス通路に流体的に結合される複数のチャネルを有し、前記第4のプレートが、その中を貫通して形成され、前記ガスマニホルドを前記第3のプレートの前記第1の複数のガス通路に流体的に結合させる複数のガス通路を有する、前記第4のプレートと
を含み、
前記第3のプレートが第6のプレートに結合された第5のプレートを含み、第5のプレートと第6のプレートの間に単一の温度制御チャネルが配置されており、前記第1および第2のガス通路が、前記第5および第6のプレートに結合された複数の流体導管を含んでいる、シャワーヘッドアセンブリ。 - 前記第1、第2、および第3のプレートが複数の機械的締結具を使用して互いに結合されている、請求項1または2に記載のアセンブリ。
- 前記第4のプレートの前記ガス通路が前記第4のプレートの前記チャネルから隔離されている、請求項1から3のいずれか一項に記載のアセンブリ。
- 第1のプレートと、
複数のガスマニホルドを形成するために前記第1のプレートに結合される第2のプレートと、
前記第2のプレートに結合され、その中に配置された1つまたは複数の温度制御チャネルを有する第3のプレートであり、前記第3のプレートが、それを貫通して形成された第1の複数のガス通路および第2の複数のガス通路を有する、前記第3のプレートと、
前記第2のプレートと前記第3のプレートとの間に配置された第4のプレートであり、前記第4のプレートが、その中に形成され、前記第3のプレートの前記第2の複数のガス通路に流体的に結合される複数のチャネルを有し、前記第4のプレートが、その中を貫通して形成され、前記複数のガスマニホルドを前記第3のプレートの前記第1の複数のガス通路に流体的に結合させる複数のガス通路を有する、前記第4のプレートと
を含み、
前記第3のプレートが第6のプレートに結合された第5のプレートを含み、第5のプレートと第6のプレートとの間に単一の温度制御チャネルが配置されている、シャワーヘッドアセンブリ。 - 前記第1および第2のガス通路が、前記第5および第6のプレートに結合された複数の流体導管を含んでいる、請求項5に記載のアセンブリ。
- 前記複数の流体導管が温度制御チャネルを貫通して配置されている、請求項6に記載のアセンブリ。
- 前記第4のプレートが、前記複数のチャネルおよび前記複数のガス通路を2つ以上の隔離された領域に分離する1つまたは複数の壁を有している、請求項5から7のいずれか一項に記載のアセンブリ。
- 前記2つ以上の隔離された領域が、外側領域の内部に配置された内側領域を含んでいる、請求項8に記載のアセンブリ。
- 前記第1、第2、および第3のプレートが複数の機械的締結具を使用して互いに結合されている、請求項5から9のいずれか一項に記載のアセンブリ。
- 第1のプレートと、
第1のガスマニホルドおよび第2のガスマニホルドを形成するために前記第1のプレートに結合される第2のプレートと、
前記第2のプレートに結合され、その中に配置された1つまたは複数の温度制御チャネルを有する第3のプレートであり、前記第3のプレートが、それを貫通して形成された第1の複数のガス通路および第2の複数のガス通路を有する、前記第3のプレートと、
前記第2のプレートと前記第3のプレートとの間に配置された第4のプレートであり、前記第4のプレートが、その中に形成され、前記第3のプレートの前記第2の複数のガス通路に流体的に結合される複数のチャネルを有し、前記第4のプレートが、その中を貫通して形成され、前記第3のプレートの前記第1の複数のガス通路に流体的に結合される複数のガス通路を有し、前記第4のプレートが、前記複数のチャネルおよび前記複数のガス通路を第1の領域および第2の領域に分離する1つまたは複数の壁を有し、前記第1の領域の前記複数のガス通路が、前記第1のガスマニホルドに流体的に結合され、前記第2の領域の前記複数のガス通路が、前記第2のガスマニホルドに流体的に結合されている、前記第4のプレートと
を含み、
前記第3のプレートが第6のプレートに結合された第5のプレートを含み、第5のプレートと第6のプレートとの間に単一の温度制御チャネルが配置されている、シャワーヘッドアセンブリ。 - 前記第1および第2のガス通路が、前記第5および第6のプレートに結合された複数の流体導管を含んでいる、請求項11に記載のアセンブリ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161454067P | 2011-03-18 | 2011-03-18 | |
US61/454,067 | 2011-03-18 | ||
PCT/US2011/058222 WO2012128789A1 (en) | 2011-03-18 | 2011-10-28 | Multiple level showerhead design |
Related Child Applications (1)
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JP2016069200A Division JP6360849B2 (ja) | 2011-03-18 | 2016-03-30 | 多レベルシャワーヘッド設計 |
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JP2014512458A JP2014512458A (ja) | 2014-05-22 |
JP5912140B2 true JP5912140B2 (ja) | 2016-04-27 |
Family
ID=46827689
Family Applications (2)
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JP2013558006A Active JP5912140B2 (ja) | 2011-03-18 | 2011-10-28 | 多レベルシャワーヘッド設計 |
JP2016069200A Active JP6360849B2 (ja) | 2011-03-18 | 2016-03-30 | 多レベルシャワーヘッド設計 |
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JP2016069200A Active JP6360849B2 (ja) | 2011-03-18 | 2016-03-30 | 多レベルシャワーヘッド設計 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9057128B2 (ja) |
JP (2) | JP5912140B2 (ja) |
KR (1) | KR101903950B1 (ja) |
CN (1) | CN103443903B (ja) |
TW (1) | TWI534291B (ja) |
WO (1) | WO2012128789A1 (ja) |
Families Citing this family (106)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070281106A1 (en) * | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
KR100849929B1 (ko) * | 2006-09-16 | 2008-08-26 | 주식회사 피에조닉스 | 반응 기체의 분사 속도를 적극적으로 조절하는 샤워헤드를구비한 화학기상 증착 방법 및 장치 |
US9449859B2 (en) * | 2009-10-09 | 2016-09-20 | Applied Materials, Inc. | Multi-gas centrally cooled showerhead design |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
DE102011056589A1 (de) * | 2011-07-12 | 2013-01-17 | Aixtron Se | Gaseinlassorgan eines CVD-Reaktors |
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CN103443903A (zh) | 2013-12-11 |
US20120234945A1 (en) | 2012-09-20 |
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JP2016164994A (ja) | 2016-09-08 |
US9057128B2 (en) | 2015-06-16 |
WO2012128789A1 (en) | 2012-09-27 |
TW201239132A (en) | 2012-10-01 |
TWI534291B (zh) | 2016-05-21 |
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