JP5893826B2 - リードフレーム及びその製造方法 - Google Patents
リードフレーム及びその製造方法 Download PDFInfo
- Publication number
- JP5893826B2 JP5893826B2 JP2010201579A JP2010201579A JP5893826B2 JP 5893826 B2 JP5893826 B2 JP 5893826B2 JP 2010201579 A JP2010201579 A JP 2010201579A JP 2010201579 A JP2010201579 A JP 2010201579A JP 5893826 B2 JP5893826 B2 JP 5893826B2
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- Prior art keywords
- plating layer
- protective
- lead frame
- rough surface
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000007747 plating Methods 0.000 claims description 268
- 239000010949 copper Substances 0.000 claims description 114
- 230000001681 protective effect Effects 0.000 claims description 98
- 239000004065 semiconductor Substances 0.000 claims description 54
- 239000010931 gold Substances 0.000 claims description 45
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 41
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 37
- 230000003746 surface roughness Effects 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 30
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 22
- 229910052763 palladium Inorganic materials 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 14
- 238000009713 electroplating Methods 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 11
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 7
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 238
- 229910052751 metal Inorganic materials 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 230000001771 impaired effect Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910001020 Au alloy Inorganic materials 0.000 description 4
- 229910000990 Ni alloy Inorganic materials 0.000 description 4
- 229910001252 Pd alloy Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229920006336 epoxy molding compound Polymers 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
、互いに密接に接触しているモールド部とリードフレームとの間に剥離が生じて、結果的に、パッケージの構造的及び機能的信頼性が損なわれる。
110 ダイパッド
120 リード部
150 メッキ層
151 粗面Cuメッキ層
152 保護メッキ層
170 アウターフレーム
180 支持部
200 半導体チップ
220 ボンディングワイヤ
250 モールド部
300 半導体パッケージ
Claims (14)
- リードフレームであって、
半導体チップが搭載されるダイパッドと、
前記半導体チップに接続されるように配置される複数のリード部と、
前記ダイパッド及び前記各リード部の少なくとも片面に形成されるメッキ層とを備え、
前記メッキ層が、所定の表面粗さを有し、
前記メッキ層が、銅(Cu)を含有する粗面Cuメッキ層と、該粗面Cuメッキ層上に形成される保護メッキ層とを含み、
前記保護メッキ層が、Cuを含有し、
前記リード部の上部の前記保護メッキ層上に、金(Au)メッキ層、及びニッケル(Ni)/パラジウム(Pd)/金(Au)積層構造を有するメッキ層からなる群から選択されるメッキ層をさらに備え、
前記Auメッキ層または前記積層構造のAu層が、AgまたはPdを含有することを特徴とするリードフレーム。 - 前記保護メッキ層の厚さが、前記粗面Cuメッキ層の厚さより大きいことを特徴とする請求項1に記載のリードフレーム。
- 前記ダイパッド及び前記リード部が、単体として一体化されていることを特徴とする請求項1に記載のリードフレーム。
- 前記保護メッキ層の厚さが、0.125μm〜1.0μmであることを特徴とする請求項1に記載のリードフレーム。
- 前記保護メッキ層の表面粗さ(Ra)が、0.1μm〜0.5μmであることを特徴とする請求項1に記載のリードフレーム。
- リードフレームの製造方法であって、
(a)原料基板をパターニングして、ダイパッド及び複数のリード部を形成するステップと、
(b)所定の表面粗さを有しかつ銅を含有する粗面Cuメッキ層を前記ダイパッド及び前記各リード部の少なくとも片面に形成し、前記粗面Cuメッキ層上に、保護メッキ層を形成するステップとを含み、
前記保護メッキ層が、Cuを含有し、
前記リード部の上部の保護メッキ層上に、金(Au)メッキ層、及びニッケル(Ni)/パラジウム(Pd)/金(Au)積層構造を有するメッキ層からなる群から選択されるメッキ層を形成するステップをさらに含み、
前記Auメッキ層または前記積層構造のAu層が、AgまたはPdを含有することを特徴とする方法。 - 前記粗面Cuメッキ層が、電解メッキ法を用いて硫酸銅溶液中で形成されることを特徴とする請求項6に記載の方法。
- 前記硫酸銅溶液が、硫酸及び硫酸銅5水和物(CuSO4・5H2O)を含有することを特徴とする請求項7に記載の方法。
- 前記硫酸銅溶液中の前記硫酸の濃度が、20ml/l〜60ml/lであることを特徴とする請求項8に記載の方法。
- 前記硫酸銅溶液中の前記硫酸銅5水和物(CuSO4・5H2O)の濃度が、10g/l〜30g/lであることを特徴とする請求項8に記載の方法。
- 前記粗面Cuメッキ層が、5秒〜20秒間の電流印加によって形成されることを特徴とする請求項7に記載の方法。
- 前記保護メッキ層の厚さが、前記粗面Cuメッキ層の厚さより大きいことを特徴とする請求項6に記載のリードフレームの製造方法。
- 前記保護メッキ層の厚さが、0.125μm〜1.0μmであることを特徴とする請求項6に記載のリードフレームの製造方法。
- 前記保護メッキ層の表面粗さ(Ra)が、0.1μm〜0.5μmであることを特徴とする請求項6に記載のリードフレームの製造方法。
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US20120119342A1 (en) * | 2010-11-11 | 2012-05-17 | Mediatek Inc. | Advanced quad flat non-leaded package structure and manufacturing method thereof |
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US9230928B2 (en) | 2011-09-12 | 2016-01-05 | Conexant Systems, Inc. | Spot plated leadframe and IC bond pad via array design for copper wire |
KR101646094B1 (ko) * | 2011-12-12 | 2016-08-05 | 해성디에스 주식회사 | 리드 프레임 및 이를 이용하여 제조된 반도체 패키지 |
DE102013204883A1 (de) * | 2013-03-20 | 2014-09-25 | Robert Bosch Gmbh | Verfahren zur Kontaktierung eines elektrischen und/oder elektronischen Bauelements und korrespondierendes Elektronikmodul |
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JP6125332B2 (ja) | 2013-05-31 | 2017-05-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6621681B2 (ja) * | 2016-02-17 | 2019-12-18 | 株式会社三井ハイテック | リードフレーム及びその製造方法、並びに半導体パッケージ |
JPWO2017179447A1 (ja) * | 2016-04-12 | 2018-04-19 | 古河電気工業株式会社 | リードフレーム材およびその製造方法 |
KR102482396B1 (ko) * | 2016-12-27 | 2022-12-28 | 후루카와 덴끼고교 가부시키가이샤 | 리드 프레임재 및 이의 제조 방법 및 반도체 패키지 |
JP7016677B2 (ja) * | 2017-11-21 | 2022-02-07 | 新光電気工業株式会社 | リードフレーム、半導体装置、リードフレームの製造方法 |
CN110265376A (zh) | 2018-03-12 | 2019-09-20 | 意法半导体股份有限公司 | 引线框架表面精整 |
US11545418B2 (en) * | 2018-10-24 | 2023-01-03 | Texas Instruments Incorporated | Thermal capacity control for relative temperature-based thermal shutdown |
US11735512B2 (en) | 2018-12-31 | 2023-08-22 | Stmicroelectronics International N.V. | Leadframe with a metal oxide coating and method of forming the same |
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