JP5886627B2 - 汚染材料が高純度シリコンに寄与する不純物の量を決定する方法及び高純度シリコンを処理する炉 - Google Patents
汚染材料が高純度シリコンに寄与する不純物の量を決定する方法及び高純度シリコンを処理する炉 Download PDFInfo
- Publication number
- JP5886627B2 JP5886627B2 JP2011529221A JP2011529221A JP5886627B2 JP 5886627 B2 JP5886627 B2 JP 5886627B2 JP 2011529221 A JP2011529221 A JP 2011529221A JP 2011529221 A JP2011529221 A JP 2011529221A JP 5886627 B2 JP5886627 B2 JP 5886627B2
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- Prior art keywords
- high purity
- purity silicon
- furnace
- silicon
- impurities
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- Expired - Fee Related
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0033—Chamber type furnaces the floor of the furnaces consisting of the support carrying the charge, e.g. car type furnaces
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B11/00—Bell-type furnaces
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D1/00—Casings; Linings; Walls; Roofs
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/02—Devices for withdrawing samples
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
- F27D2019/0006—Monitoring the characteristics (composition, quantities, temperature, pressure) of at least one of the gases of the kiln atmosphere and using it as a controlling value
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Silicon Compounds (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Furnace Housings, Linings, Walls, And Ceilings (AREA)
- Glass Melting And Manufacturing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Furnace Details (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
Description
汚染材料が高純度シリコンに寄与する不純物の量を決定するために、本発明に従った方法に従って不純物を含む様々な汚染材料を試験した。より具体的には、汚染材料が高純度シリコンに寄与する不純物の量を決定するために、500ppta以下の不純物含有量を有する高純度シリコンを様々な材料中に包み込んだ。高純度シリコンを焼き鈍す十分な時間の期間に亘って、汚染材料中に包み込んだサンプルを焼鈍し温度で加熱した。
Claims (4)
- 不純物を含む汚染材料が高純度シリコンに寄与する不純物の量を決定する方法であって、
汚染材料の不純物含有量を決定するステップと、
前記高純度シリコンの不純物含有量を決定するステップと、
前記汚染材料を提供するステップと、
前記高純度シリコンのサンプルを前記汚染材料中に包み込むステップと、
前記汚染材料中に包み込まれる前記サンプルを炉内で加熱するステップと、
前記加熱するステップ前の前記高純度シリコンの不純物含有量と比較して、前記汚染材料中に包み込まれる前記サンプルを加熱するステップ後の前記高純度シリコンの不純物含有量の変化を決定するステップとを含む、
方法。 - 前記高純度シリコンは、500ppta以下の不純物含有量を有するシリコンとして更に定められ、前記汚染材料中に包み込まれる前記サンプルは、少なくとも200分の期間に亘って少なくとも898.9℃の温度で加熱される、請求項1に記載の方法。
- 前記不純物は、アルミニウム、砒素、ボロン、燐、鉄、ニッケル、銅、クロム、及び、それらの組み合わせの群から選択される、請求項1又は2に記載の方法。
- 前記汚染材料は、前記炉の加熱チャンバを定めるハウジングを形成する前記汚染材料の総重量に基づく少なくとも40重量%の量で存在する少なくとも1つのセラミックを含む、請求項1乃至3のうちのいずれか1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10165408P | 2008-09-30 | 2008-09-30 | |
US61/101,654 | 2008-09-30 | ||
PCT/US2009/058195 WO2010039570A2 (en) | 2008-09-30 | 2009-09-24 | Method of determining an amount of impurities that a contaminating material contributes to high purity silicon and furnace for treating high purity silicon |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014167351A Division JP5857101B2 (ja) | 2008-09-30 | 2014-08-20 | 汚染材料が高純度シリコンに寄与する不純物の量を決定する方法及び高純度シリコンを処理する炉 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012504097A JP2012504097A (ja) | 2012-02-16 |
JP5886627B2 true JP5886627B2 (ja) | 2016-03-16 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011529221A Expired - Fee Related JP5886627B2 (ja) | 2008-09-30 | 2009-09-24 | 汚染材料が高純度シリコンに寄与する不純物の量を決定する方法及び高純度シリコンを処理する炉 |
JP2014167351A Expired - Fee Related JP5857101B2 (ja) | 2008-09-30 | 2014-08-20 | 汚染材料が高純度シリコンに寄与する不純物の量を決定する方法及び高純度シリコンを処理する炉 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014167351A Expired - Fee Related JP5857101B2 (ja) | 2008-09-30 | 2014-08-20 | 汚染材料が高純度シリコンに寄与する不純物の量を決定する方法及び高純度シリコンを処理する炉 |
Country Status (8)
Country | Link |
---|---|
US (2) | US20110177626A1 (ja) |
EP (2) | EP2346783A2 (ja) |
JP (2) | JP5886627B2 (ja) |
KR (1) | KR101658356B1 (ja) |
CN (2) | CN103149326B (ja) |
CA (1) | CA2739349A1 (ja) |
TW (1) | TWI491768B (ja) |
WO (1) | WO2010039570A2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI537231B (zh) * | 2010-07-12 | 2016-06-11 | 康寧公司 | 高靜態疲勞的氧化鋁隔離管 |
DE102010043702A1 (de) * | 2010-11-10 | 2012-05-10 | Wacker Chemie Ag | Verfahren zur Bestimmung von Verunreinigungen in Silicium |
DE102010063407A1 (de) | 2010-12-17 | 2012-06-21 | Wacker Chemie Ag | Verfahren und Vorrichtung zur Herstellung von Silicium-Dünnstäben |
CN102323136B (zh) * | 2011-08-02 | 2013-07-10 | 重庆密奥仪器有限公司 | 检测高纯硅成分分析用的挥硅实验装置 |
JP5782996B2 (ja) * | 2011-11-01 | 2015-09-24 | 信越半導体株式会社 | 単結晶の製造方法 |
DE102013221826A1 (de) | 2013-10-28 | 2015-04-30 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
JP6418778B2 (ja) * | 2014-05-07 | 2018-11-07 | 信越化学工業株式会社 | 多結晶シリコン棒、多結晶シリコン棒の製造方法、および、単結晶シリコン |
CN104849366B (zh) * | 2015-05-11 | 2017-12-19 | 中国恩菲工程技术有限公司 | 检测系统及检测方法 |
US20220381761A1 (en) * | 2020-07-21 | 2022-12-01 | Wacker Chemie Ag | Method for determining trace metals in silicon |
CN115560587B (zh) * | 2022-10-20 | 2023-07-07 | 广东昊达智能装备科技有限公司 | 一种快速升温的气氛钟罩炉及其控制方法 |
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-
2009
- 2009-09-24 CN CN201310042914.XA patent/CN103149326B/zh not_active Expired - Fee Related
- 2009-09-24 KR KR1020117009597A patent/KR101658356B1/ko not_active Application Discontinuation
- 2009-09-24 CN CN2009801445758A patent/CN102209685A/zh active Pending
- 2009-09-24 US US13/121,788 patent/US20110177626A1/en not_active Abandoned
- 2009-09-24 EP EP09792942A patent/EP2346783A2/en not_active Withdrawn
- 2009-09-24 WO PCT/US2009/058195 patent/WO2010039570A2/en active Application Filing
- 2009-09-24 CA CA2739349A patent/CA2739349A1/en not_active Abandoned
- 2009-09-24 JP JP2011529221A patent/JP5886627B2/ja not_active Expired - Fee Related
- 2009-09-24 EP EP12195527.2A patent/EP2567939A3/en not_active Withdrawn
- 2009-09-30 TW TW098133306A patent/TWI491768B/zh not_active IP Right Cessation
-
2012
- 2012-04-10 US US13/443,466 patent/US8895324B2/en not_active Expired - Fee Related
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2014
- 2014-08-20 JP JP2014167351A patent/JP5857101B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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TW201022491A (en) | 2010-06-16 |
US8895324B2 (en) | 2014-11-25 |
JP2012504097A (ja) | 2012-02-16 |
JP2015027940A (ja) | 2015-02-12 |
EP2567939A3 (en) | 2014-07-09 |
WO2010039570A3 (en) | 2010-11-18 |
TWI491768B (zh) | 2015-07-11 |
US20110177626A1 (en) | 2011-07-21 |
KR20110079686A (ko) | 2011-07-07 |
CN102209685A (zh) | 2011-10-05 |
US20120227472A1 (en) | 2012-09-13 |
WO2010039570A2 (en) | 2010-04-08 |
EP2346783A2 (en) | 2011-07-27 |
JP5857101B2 (ja) | 2016-02-10 |
CN103149326A (zh) | 2013-06-12 |
EP2567939A2 (en) | 2013-03-13 |
CN103149326B (zh) | 2015-09-09 |
CA2739349A1 (en) | 2010-04-08 |
KR101658356B1 (ko) | 2016-09-22 |
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