JP5872281B2 - ダイオードを含む半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 78
- 239000012535 impurity Substances 0.000 claims description 28
- 230000005669 field effect Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 description 11
- 238000011084 recovery Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 8
- 239000002800 charge carrier Substances 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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Description
A 陽極
A1 第1の陽極
A2 第2の陽極
C 陰極
S スイッチ
200、400、600、700、700’、800、800’、900 ダイオード
202、402、602、702、802、902 n型ドリフト領域
204、404、604、704、804、904、904’ 第1のp型陽極領域
206、406、606、706、806、906 第2のp型陽極領域
208、408、608、708、808 第1の側
210、410、610、710、810 垂直方向
211、411、611、711、811 横方向
212、412、612、712、812、912 n型陰極領域
214、414、614、714、814、914 第2の側
216、416、616、716、816、916 陰極接触部
218、418、618、718、818 陽極接触部
220、420、620、720、820 FET
221、421、621、721、821 n型領域
222、422、622、822 チャネル
224、424、624、724、824 ゲート構造
226、426、626、726、826 ゲート誘電体
228、428、628、728、728’、828、828’ ゲート電極
230、430、630、730、830 p型領域
434 第2のn型陰極領域
738 トレンチ分離部
918 陽極接触部
942 金属接触部
d1 第1のp型陽極領域の広がり
d2 第2のp型陽極領域の広がり
d5 ゲート電極’の底面の深さ
d6 第2のp型陽極領域の底面の深さ
N1、N2 p型不純物濃度
N3、N4 n型不純物濃度
A−A’、B−B、C−C’、D−D’ 断面線
Claims (11)
- 陰極と、
第1のp型半導体陽極領域と第2のp型半導体陽極領域を含む陽極と、を含む半導体装置であって
前記第1のp型半導体陽極領域は陽極接触領域に電気的に接続され、
前記第2のp型半導体陽極領域は前記第2のp型半導体陽極領域と前記陽極接触領域間を電気的に接続または切断するように構成されたスイッチを介し前記陽極接触領域に電気的に接続され、
前記第1のp型半導体陽極領域に対向した前記陰極の第1の部分内のn型不純物添加のドーズ量は、前記第2のp型半導体陽極領域に対向した前記陰極の第2の部分内のn型不純物添加のドーズ量より少なく、
前記スイッチは電界効果トランジスタを含み、
前記第2のp型半導体陽極領域は前記電界効果トランジスタのソースとドレインの一方であり、
前記スイッチは第1の補助n型領域と第2の補助p型領域とを含み、前記第2の補助p型領域は前記電界効果トランジスタの前記ソースと前記ドレインの他方であり、
前記第1の補助n型領域と前記第2の補助p型領域は前記陽極接触領域に電気的に接続され、
前記スイッチは垂直チャネルを含むトレンチ電界効果トランジスタであり、
前記第1の補助n型領域は前記第2のp型半導体陽極領域内に配置され、
前記第2の補助p型領域は前記第1の補助n型領域内に配置され、
前記第1の補助n型領域と前記第2の補助p型領域は半導体基板の表面に接し、
ゲート電極はトレンチ内に配置され、前記ゲート電極は前記第2の補助p型領域と前記第2のp型半導体陽極領域間の前記トレンチの側壁における前記第1の補助n型領域内に位置するチャネルの導電率を制御するように構成される、
半導体装置。 - 前記陰極の前記第1の部分内の前記n型不純物添加の前記ドーズ量に対する前記陰極の前記第2の部分における前記n型不純物添加の前記ドーズ量の比は5〜104である、請求項1に記載の半導体装置。
- 前記第1のp型半導体陽極領域内のp型不純物添加のドーズ量は前記第2のp型半導体陽極領域内の前記p型不純物添加のドーズ量より少ない、請求項1または2に記載の半導体装置。
- 前記第1のp型半導体陽極領域内の前記p型不純物添加の前記ドーズ量に対する前記第2のp型半導体陽極領域内の前記p型不純物添加のドーズ量の比は5〜104である、請求項3に記載の半導体装置。
- 半導体基板内において、前記第2のp型半導体陽極領域の底面は前記第1のp型半導体陽極領域の底面より深くに位置する、請求項1〜4のいずれか一項に記載の半導体装置。
- 前記第1のp型半導体陽極領域と前記第2のp型半導体陽極領域間および前記陰極と前記陽極間に配置されたn型ドリフト領域をさらに含む、請求項1〜5のいずれか一項に記載の半導体装置。
- 前記半導体基板内において、前記ゲート電極の底面は前記第2のp型半導体陽極領域の底面より深いところで終わる、請求項1ないし6のいずれか一項に記載の半導体装置。
- 前記半導体基板内の前記ゲート電極の底面は前記第2のp型半導体陽極領域の底面と同じレベルかあるいはそれよりも上で終わる、請求項1ないし6のいずれか一項に記載の半導体装置。
- 少数キャリア寿命は前記第1のp型半導体陽極領域内より前記第2のp型半導体陽極領域内でより高い、請求項1から8のいずれか一項に記載の半導体装置。
- 前記第1のp型半導体陽極領域内の前記少数キャリア寿命に対する前記第2のp型半導体陽極領域内の前記少数キャリア寿命の比は5〜104である、請求項9に記載の半導体装置。
- 陽極と、
第1のn型半導体陰極領域と第2のn型半導体陰極領域を含む陰極とを含む半導体装置であって、
前記第1のn型半導体陰極領域は陰極接触領域に電気的に接続され、
前記第2のn型半導体陰極領域は、前記第2のn型半導体陰極領域と前記陰極接触領域間を電気的に接続または切断するように構成されたスイッチを介し前記陰極接触領域に電気的に接続され、
前記第1のn型半導体陰極領域に対向した前記陽極の第1の部分内のp型不純物添加のドーズ量は、前記第2のn型半導体陰極領域に対向した前記陽極の第2の部分内のp型不純物添加のドーズ量より少なく、
前記スイッチは電界効果トランジスタを含み、
前記第2のn型半導体陰極領域は前記電界効果トランジスタのソースとドレインの一方であり、
前記スイッチは第1の補助p型領域と第2の補助n型領域とを含み、前記第2の補助n型領域は前記電界効果トランジスタの前記ソースと前記ドレインの他方であり、
前記第1の補助p型領域と前記第2の補助n型領域は前記陰極接触領域に電気的に接続され、
前記スイッチは垂直チャネルを含むトレンチ電界効果トランジスタであり、
前記第1の補助p型領域は前記第2のn型半導体陰極領域内に配置され、
前記第2の補助n型領域は前記第1の補助p型領域内に配置され、
前記第1の補助p型領域と前記第2の補助n型領域は半導体基板の表面に接し、
ゲート電極はトレンチ内に配置され、前記ゲート電極は前記第2の補助n型領域と前記第2のn型半導体陰極領域間の前記トレンチの側壁における前記第1の補助p型領域内に位置するチャネルの導電率を制御するように構成される、
半導体装置。
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US12/980,041 US8415747B2 (en) | 2010-12-28 | 2010-12-28 | Semiconductor device including diode |
US12/980,041 | 2010-12-28 |
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JP5872281B2 true JP5872281B2 (ja) | 2016-03-01 |
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JP (1) | JP5872281B2 (ja) |
CN (1) | CN102569298B (ja) |
DE (1) | DE102011056956A1 (ja) |
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DE102015102138B4 (de) * | 2015-02-13 | 2017-02-02 | Infineon Technologies Ag | Halbleiterbauelemente und ein Verfahren zum Bilden eines Halbleiterbauelements |
DE102015120210B4 (de) * | 2015-11-23 | 2019-02-21 | Infineon Technologies Ag | Leistungshalbleitertransistor mit vergrößerter bipolarer Verstärkung |
JP6662059B2 (ja) * | 2016-01-26 | 2020-03-11 | 豊田合成株式会社 | 半導体装置及び電力変換装置 |
DE102016105699B4 (de) * | 2016-03-29 | 2019-12-12 | Infineon Technologies Ag | Halbleitervorrichtung mit Finnenabschnitten zwischen sich in einen Halbleiterteil erstreckenden Gatestrukturen |
DE102016112490B4 (de) | 2016-07-07 | 2022-05-25 | Infineon Technologies Ag | Halbleiterbauelemente und Verfahren zum Bilden eines Halbleiterbauelements |
JP6742925B2 (ja) * | 2017-01-18 | 2020-08-19 | 株式会社 日立パワーデバイス | 半導体装置、及びそれを用いた電力変換装置 |
TWI630700B (zh) * | 2017-05-10 | 2018-07-21 | 新唐科技股份有限公司 | 半導體元件 |
JP6896672B2 (ja) * | 2018-03-21 | 2021-06-30 | 株式会社東芝 | 半導体装置及びその製造方法 |
GB2609343B (en) * | 2018-07-23 | 2023-06-07 | Ween Semiconductors Co Ltd | Power Semiconductor Device |
JP7315443B2 (ja) * | 2019-12-06 | 2023-07-26 | 株式会社日立製作所 | 半導体回路制御方法、及びそれを適用した電力変換器 |
JP2023036341A (ja) | 2021-09-02 | 2023-03-14 | 株式会社 日立パワーデバイス | 半導体装置、半導体装置の製造方法、電力変換装置 |
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