JP5866092B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5866092B2 JP5866092B2 JP2011238329A JP2011238329A JP5866092B2 JP 5866092 B2 JP5866092 B2 JP 5866092B2 JP 2011238329 A JP2011238329 A JP 2011238329A JP 2011238329 A JP2011238329 A JP 2011238329A JP 5866092 B2 JP5866092 B2 JP 5866092B2
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- Prior art keywords
- semiconductor layer
- oxide
- insulating layer
- layer
- transistor
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- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図1乃至図7及び図15を用いて説明する。
実施の形態1で例示したトランジスタを用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを含む駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本発明の一態様である半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビまたはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラなどのカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。上記実施の形態で説明した半導体装置を具備する電子機器の例について説明する。
・成膜法:DCスパッタリング法
・ターゲット組成比:(In:Ga:Zn=1:1:0.5)
・成膜ガス:Ar(35sccm)、N2(5sccm)
・電力:0.5kW(DC)
・圧力:0.4Pa
・T−S間距離:60mm
・基板温度:室温
・成膜法:DCスパッタリング法
・ターゲット組成比:(In:Ga:Zn=1:1:0.5)
・成膜ガス:Ar(30sccm)、O2(15sccm)
・電力:0.5kW(DC)
・圧力:0.4Pa
・T−S間距離:60mm
・基板温度:室温
102 下地絶縁層
106 酸窒化物半導体層
108a ソース電極
108b ドレイン電極
112 ゲート絶縁層
113 ゲート絶縁層
114 ゲート電極
122a ソース領域
122b ドレイン領域
126 チャネル領域
132 ゲート絶縁層
134 ゲート電極
136 酸窒化物半導体層
138a ソース電極
138b ドレイン電極
151 トランジスタ
152 トランジスタ
153 トランジスタ
154 トランジスタ
155 トランジスタ
156 トランジスタ
162 ゲート絶縁層
164 ゲート電極
166 酸窒化物半導体層
168a ソース電極
168b ドレイン電極
169 保護絶縁層
176 酸窒化物半導体層
178a ソース電極
178b ドレイン電極
179 保護絶縁層
182 ゲート絶縁層
184 ゲート電極
188a ソース電極
188b ドレイン電極
189 保護絶縁層
201 基板
202 画素部
203 信号線駆動回路
204 走査線駆動回路
205 シール材
206 基板
208 液晶層
210 トランジスタ
211 トランジスタ
213 液晶素子
215 接続端子電極
216 端子電極
219 異方性導電層
221 絶縁層
230 電極
231 電極
232 絶縁層
233 絶縁層
235 スペーサ
240 隔壁
241 発光層
243 発光素子
244 充填材
252 キャビティ
253 球形粒子
254 充填材
255a 黒色領域
255b 白色領域
301 本体
302 筐体
303 表示部
304 キーボード
311 本体
312 スタイラス
313 表示部
314 操作ボタン
315 外部インターフェイス
320 電子書籍
321 筐体
322 筐体
323 表示部
324 表示部
325 軸部
326 電源
327 操作キー
328 スピーカー
330 筐体
331 筐体
332 表示パネル
333 スピーカー
334 マイクロフォン
335 操作キー
336 ポインティングデバイス
337 カメラ用レンズ
338 外部接続端子
340 太陽電池セル
341 外部メモリスロット
360 テレビジョン装置
361 筐体
363 表示部
365 スタンド
500 基板
502 下地絶縁層
506 酸窒化物半導体層
508a ソース電極
508b ドレイン電極
510 トランジスタ
512 ゲート絶縁層
514 ゲート電極
516 保護絶縁層
518a ソース配線
518b ドレイン配線
Claims (6)
- 酸化物半導体層と、
ゲート電極と、
前記酸化物半導体層と電気的に接続されたソース電極及びドレイン電極と、
を有し、
前記酸化物半導体層は、窒素を含み、
前記酸化物半導体層は、チャネルとして機能する領域を有し、
前記酸化物半導体層は、酸化物絶縁層上方に設けられ、
前記酸化物絶縁層は、TDS分析において、酸素原子に換算した酸素の放出量が1.0×1020atoms/cm3以上であることを特徴とする半導体装置。 - 酸化物半導体層と、
前記酸化物半導体層上方のソース電極及びドレイン電極と、
前記ソース電極上方及び前記ドレイン電極上方のゲート絶縁層と、
前記ゲート絶縁層上方のゲート電極と、
を有し、
前記酸化物半導体層は、窒素を含み、
前記酸化物半導体層は、チャネルとして機能する領域を有し、
前記酸化物半導体層は、酸化物絶縁層上方に設けられ、
前記酸化物絶縁層は、TDS分析において、酸素原子に換算した酸素の放出量が1.0×1020atoms/cm3以上であることを特徴とする半導体装置。 - 酸化物半導体層と、
前記酸化物半導体層上方のゲート絶縁層と、
前記ゲート絶縁層上方のゲート電極と、
前記ゲート電極上方のソース電極及びドレイン電極と、
を有し、
前記酸化物半導体層は、窒素を含み、
前記酸化物半導体層は、チャネルとして機能する領域を有し、
前記酸化物半導体層は、酸化物絶縁層上方に設けられ、
前記酸化物絶縁層は、TDS分析において、酸素原子に換算した酸素の放出量が1.0×1020atoms/cm3以上であることを特徴とする半導体装置。 - 請求項3において、
前記酸化物半導体層は、ソース領域およびドレイン領域を有し、
前記ソース領域および前記ドレイン領域は、前記ゲート電極をマスクとして前記酸化物半導体層を低抵抗化することにより形成されたものであることを特徴とする半導体装置。 - 請求項1乃至4のいずれか一項において、
前記酸化物半導体層に含まれる窒素の濃度は、0.1atomic%以上30atomic%以下であることを特徴とする半導体装置。 - 請求項1乃至5のいずれか一項において、
前記酸化物絶縁層は、化学量論比を満たす酸素よりも多くの酸素を含むことを特徴とする半導体装置。
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TWI535014B (zh) | 2010-11-11 | 2016-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
KR102161077B1 (ko) * | 2012-06-29 | 2020-09-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
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KR20120048500A (ko) | 2012-05-15 |
US20120112183A1 (en) | 2012-05-10 |
JP2019117948A (ja) | 2019-07-18 |
KR20200123766A (ko) | 2020-10-30 |
US9299851B2 (en) | 2016-03-29 |
KR102320343B1 (ko) | 2021-11-03 |
JP2016106402A (ja) | 2016-06-16 |
KR20200000405A (ko) | 2020-01-02 |
TWI555205B (zh) | 2016-10-21 |
JP2017228797A (ja) | 2017-12-28 |
TW201225296A (en) | 2012-06-16 |
US10170598B2 (en) | 2019-01-01 |
JP2012114421A (ja) | 2012-06-14 |
US20160181406A1 (en) | 2016-06-23 |
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