JP5865634B2 - 配線膜の製造方法 - Google Patents

配線膜の製造方法 Download PDF

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Publication number
JP5865634B2
JP5865634B2 JP2011193849A JP2011193849A JP5865634B2 JP 5865634 B2 JP5865634 B2 JP 5865634B2 JP 2011193849 A JP2011193849 A JP 2011193849A JP 2011193849 A JP2011193849 A JP 2011193849A JP 5865634 B2 JP5865634 B2 JP 5865634B2
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JP
Japan
Prior art keywords
film
alloy layer
alloy
layer
photoresist
Prior art date
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Active
Application number
JP2011193849A
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English (en)
Japanese (ja)
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JP2013054281A (ja
JP2013054281A5 (https=
Inventor
一之 藤原
一之 藤原
井上　和式
和式 井上
貴人 山部
貴人 山部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2011193849A priority Critical patent/JP5865634B2/ja
Priority to US13/604,452 priority patent/US9704742B2/en
Publication of JP2013054281A publication Critical patent/JP2013054281A/ja
Priority to US14/340,284 priority patent/US20140377952A1/en
Publication of JP2013054281A5 publication Critical patent/JP2013054281A5/ja
Application granted granted Critical
Publication of JP5865634B2 publication Critical patent/JP5865634B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Non-Insulated Conductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Manufacturing Of Electric Cables (AREA)
JP2011193849A 2011-09-06 2011-09-06 配線膜の製造方法 Active JP5865634B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011193849A JP5865634B2 (ja) 2011-09-06 2011-09-06 配線膜の製造方法
US13/604,452 US9704742B2 (en) 2011-09-06 2012-09-05 Wiring film and active matrix substrate using the same, and method for manufacturing wiring film
US14/340,284 US20140377952A1 (en) 2011-09-06 2014-07-24 Wiring film and active matrix substrate using the same, and method for manufacturing wiring film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011193849A JP5865634B2 (ja) 2011-09-06 2011-09-06 配線膜の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015249485A Division JP6072888B2 (ja) 2015-12-22 2015-12-22 配線膜およびそれを用いたアクティブマトリクス基板、並びに配線膜の製造方法

Publications (3)

Publication Number Publication Date
JP2013054281A JP2013054281A (ja) 2013-03-21
JP2013054281A5 JP2013054281A5 (https=) 2014-09-18
JP5865634B2 true JP5865634B2 (ja) 2016-02-17

Family

ID=47752427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011193849A Active JP5865634B2 (ja) 2011-09-06 2011-09-06 配線膜の製造方法

Country Status (2)

Country Link
US (2) US9704742B2 (https=)
JP (1) JP5865634B2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015012048A (ja) * 2013-06-27 2015-01-19 三菱電機株式会社 アクティブマトリクス基板およびその製造方法
CN103605242B (zh) * 2013-11-21 2016-08-31 合肥京东方光电科技有限公司 一种阵列基板及其制备方法和显示装置
JP6287635B2 (ja) * 2014-06-30 2018-03-07 日立金属株式会社 半導体装置の製造方法および半導体装置
JP6562089B2 (ja) * 2016-02-01 2019-08-21 株式会社リコー 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム
CN108231797A (zh) * 2018-01-03 2018-06-29 京东方科技集团股份有限公司 一种导电结构图案及其制备方法、阵列基板、显示装置
US11011381B2 (en) * 2018-07-27 2021-05-18 Texas Instruments Incorporated Patterning platinum by alloying and etching platinum alloy

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4425183A (en) * 1983-08-08 1984-01-10 Ncr Corporation Metal bevel process for multi-level metal semiconductor applications
US4556629A (en) * 1983-12-21 1985-12-03 Morton Thiokol, Inc. Developer composition for positive photoresists using solution with cyclic quaternary ammonium hydroxides
JPH06122982A (ja) 1992-10-13 1994-05-06 Matsushita Electric Ind Co Ltd アルミニウムを主成分とする金属薄膜のエッチング液組成物
JP2614403B2 (ja) 1993-08-06 1997-05-28 インターナショナル・ビジネス・マシーンズ・コーポレイション テーパエッチング方法
US6081308A (en) * 1996-11-21 2000-06-27 Samsung Electronics Co., Ltd. Method for manufacturing liquid crystal display
JP2001077098A (ja) 1999-09-03 2001-03-23 Toshiba Corp エッチング液、及びこれを用いる薄膜パターンの製造方法
JP2003127397A (ja) 2001-10-26 2003-05-08 Canon Inc 回路基板の製造方法
TWI245071B (en) * 2002-04-24 2005-12-11 Mitsubishi Chem Corp Etchant and method of etching
JP2005303003A (ja) * 2004-04-12 2005-10-27 Kobe Steel Ltd 表示デバイスおよびその製法
KR20060081470A (ko) * 2005-01-07 2006-07-13 삼성전자주식회사 박막트랜지스터 기판과 그 제조방법
JP2007123672A (ja) * 2005-10-31 2007-05-17 Mitsubishi Electric Corp 導電体構造、導電体構造の製造方法、素子基板および素子基板の製造方法
JP2007157755A (ja) 2005-11-30 2007-06-21 Kobe Steel Ltd 配線膜の形成方法
KR20070075808A (ko) * 2006-01-16 2007-07-24 삼성전자주식회사 표시 기판의 제조 방법 및 이를 이용하여 제조한 표시 기판
JP2008098611A (ja) * 2006-09-15 2008-04-24 Kobe Steel Ltd 表示装置
WO2008047667A1 (fr) * 2006-10-16 2008-04-24 Mitsui Mining & Smelting Co., Ltd. Film multicouche pour câblage et réalisation câblée
KR101365673B1 (ko) * 2006-11-24 2014-02-21 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 기판 및이의 제조방법
CN101952485A (zh) * 2007-11-22 2011-01-19 出光兴产株式会社 蚀刻液组合物

Also Published As

Publication number Publication date
JP2013054281A (ja) 2013-03-21
US9704742B2 (en) 2017-07-11
US20130056737A1 (en) 2013-03-07
US20140377952A1 (en) 2014-12-25

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