JP5859746B2 - 蓄電装置およびその作製方法 - Google Patents
蓄電装置およびその作製方法 Download PDFInfo
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- JP5859746B2 JP5859746B2 JP2011117217A JP2011117217A JP5859746B2 JP 5859746 B2 JP5859746 B2 JP 5859746B2 JP 2011117217 A JP2011117217 A JP 2011117217A JP 2011117217 A JP2011117217 A JP 2011117217A JP 5859746 B2 JP5859746 B2 JP 5859746B2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102906913B (zh) * | 2010-06-01 | 2016-08-03 | 株式会社半导体能源研究所 | 蓄能装置及其制造方法 |
| KR101874935B1 (ko) | 2010-06-30 | 2018-07-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 및 그 제조 방법 |
| US8814956B2 (en) | 2011-07-14 | 2014-08-26 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device, electrode, and manufacturing method thereof |
| KR20130024769A (ko) | 2011-08-30 | 2013-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 |
| JP6035013B2 (ja) | 2011-08-30 | 2016-11-30 | 株式会社半導体エネルギー研究所 | 電極の作製方法 |
| JP2013054878A (ja) | 2011-09-02 | 2013-03-21 | Semiconductor Energy Lab Co Ltd | 電極の作製方法および蓄電装置 |
| JP2013069418A (ja) | 2011-09-20 | 2013-04-18 | Semiconductor Energy Lab Co Ltd | リチウム二次電池およびその製造方法 |
| JP6218349B2 (ja) | 2011-09-30 | 2017-10-25 | 株式会社半導体エネルギー研究所 | 蓄電装置 |
| US9384904B2 (en) | 2012-04-06 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device, method for forming the same, and power storage device |
| JP6216154B2 (ja) | 2012-06-01 | 2017-10-18 | 株式会社半導体エネルギー研究所 | 蓄電装置用負極及び蓄電装置 |
| JP6306013B2 (ja) | 2012-08-21 | 2018-04-04 | クラトス・エル・エル・シー | 官能化iva族粒子およびその使用方法 |
| JP6267482B2 (ja) | 2012-11-02 | 2018-01-24 | 株式会社半導体エネルギー研究所 | 電極の製造方法 |
| DE112013005307T5 (de) | 2012-11-07 | 2015-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Elektrode für Energiespeichervorrichtung, Energiespeichervorrichtung und Herstellungsverfahren der Elektrode für Energiespeichervorrichtung |
| KR102460298B1 (ko) | 2013-04-19 | 2022-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 이차 전지 및 그 제작 방법 |
| JP6586269B2 (ja) | 2013-10-22 | 2019-10-02 | 株式会社半導体エネルギー研究所 | 蓄電装置用電極 |
| US20150132649A1 (en) | 2013-11-13 | 2015-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Negative electrode for power storage device, power storage device, and electrical device |
| CN106104862B (zh) | 2014-03-13 | 2020-04-28 | 株式会社半导体能源研究所 | 电极、蓄电装置、电子设备、以及电极的制造方法 |
| JP2016027562A (ja) | 2014-07-04 | 2016-02-18 | 株式会社半導体エネルギー研究所 | 二次電池の作製方法及び製造装置 |
| JP6664184B2 (ja) | 2014-10-15 | 2020-03-13 | 株式会社半導体エネルギー研究所 | 電極、及び電極の作製方法 |
| JP6890375B2 (ja) | 2014-10-21 | 2021-06-18 | 株式会社半導体エネルギー研究所 | 装置 |
| US10403879B2 (en) | 2014-12-25 | 2019-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Electrolytic solution, secondary battery, electronic device, and method of manufacturing electrode |
| JP6723023B2 (ja) | 2015-02-24 | 2020-07-15 | 株式会社半導体エネルギー研究所 | 二次電池用電極の製造方法 |
| JP6869706B2 (ja) | 2015-12-11 | 2021-05-12 | 株式会社半導体エネルギー研究所 | 蓄電装置用負極、蓄電装置、および電気機器 |
| CA3029244A1 (en) | 2016-07-05 | 2018-01-11 | Kratos LLC | Passivated pre-lithiated micron and sub-micron group iva particles and methods of preparation thereof |
| CN106229480A (zh) * | 2016-08-19 | 2016-12-14 | 宁波中车新能源科技有限公司 | 一种电池电容的电极材料 |
| WO2018183909A1 (en) | 2017-03-31 | 2018-10-04 | Kratos LLC | Precharged negative electrode material for secondary battery |
| CN109935836B (zh) * | 2017-12-19 | 2024-06-18 | 成都大超科技有限公司 | 集流体结构、锂电池电芯及其锂电池 |
| NL2023642B1 (en) | 2019-08-14 | 2021-02-24 | Leydenjar Tech B V | Silicon composition material for use as battery anode |
| CN113053677B (zh) * | 2019-12-26 | 2023-12-01 | 佳能株式会社 | 电源单元和包括电源单元的放射线摄像装置 |
Family Cites Families (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2110097C (en) * | 1992-11-30 | 2002-07-09 | Soichiro Kawakami | Secondary battery |
| TW264575B (https=) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
| JP3431033B2 (ja) | 1993-10-29 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体作製方法 |
| JP2762218B2 (ja) | 1993-12-22 | 1998-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP2762219B2 (ja) | 1993-12-22 | 1998-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP3025814B2 (ja) | 1993-12-22 | 2000-03-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR100319332B1 (ko) | 1993-12-22 | 2002-04-22 | 야마자끼 순페이 | 반도체장치및전자광학장치 |
| TW379360B (en) | 1997-03-03 | 2000-01-11 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| JP3032801B2 (ja) | 1997-03-03 | 2000-04-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US20020168574A1 (en) | 1997-06-27 | 2002-11-14 | Soon-Ho Ahn | Lithium ion secondary battery and manufacturing method of the same |
| WO2000014817A1 (en) | 1998-09-08 | 2000-03-16 | Sumitomo Metal Industries, Ltd. | Negative electrode material for nonaqueous electrode secondary battery and method for producing the same |
| JP4199871B2 (ja) * | 1999-02-22 | 2008-12-24 | 株式会社トクヤマ | 非水電解液二次電池負極材料および非水電解液二次電池 |
| AU7951400A (en) | 1999-10-22 | 2001-04-30 | Sanyo Electric Co., Ltd. | Method for producing electrode for lithium secondary cell |
| US6887511B1 (en) | 1999-10-22 | 2005-05-03 | Sanyo Electric Co., Ltd. | Method for preparing electrode material for lithium battery |
| AU7951100A (en) | 1999-10-22 | 2001-04-30 | Sanyo Electric Co., Ltd. | Electrode for lithium secondary cell and lithium secondary cell |
| JP2002083594A (ja) | 1999-10-22 | 2002-03-22 | Sanyo Electric Co Ltd | リチウム電池用電極並びにこれを用いたリチウム電池及びリチウム二次電池 |
| KR100520872B1 (ko) | 1999-10-22 | 2005-10-12 | 산요덴키가부시키가이샤 | 리튬 전지용 전극 및 리튬 2차전지 |
| KR20060083233A (ko) | 1999-10-22 | 2006-07-20 | 산요덴키가부시키가이샤 | 리튬 2차전지용 전극 및 리튬 2차전지 |
| EP1246278B1 (en) | 1999-10-22 | 2011-05-18 | Sanyo Electric Co., Ltd. | Electrode for lithium cell and lithium secondary cell |
| JP2001210315A (ja) | 2000-01-25 | 2001-08-03 | Sanyo Electric Co Ltd | リチウム二次電池用電極及びこれを用いたリチウム二次電池 |
| JP4201509B2 (ja) | 2001-03-06 | 2008-12-24 | 三洋電機株式会社 | リチウム二次電池用電極及びリチウム二次電池 |
| JP2003246700A (ja) | 2002-02-22 | 2003-09-02 | Japan Science & Technology Corp | シリコンナノニードルの製法 |
| JP3896025B2 (ja) * | 2002-04-10 | 2007-03-22 | 三洋電機株式会社 | 二次電池用電極 |
| JP4140765B2 (ja) | 2002-09-19 | 2008-08-27 | コバレントマテリアル株式会社 | 針状シリコン結晶およびその製造方法 |
| US7015496B2 (en) | 2002-12-27 | 2006-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Field emission device and manufacturing method thereof |
| JP2004281317A (ja) | 2003-03-18 | 2004-10-07 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池用電極材料とその製造方法、ならびにそれを用いた非水電解質二次電池 |
| JP2004288564A (ja) * | 2003-03-25 | 2004-10-14 | Shin Etsu Chem Co Ltd | 非水電解質二次電池用電極及びその製造方法 |
| JP2004311141A (ja) * | 2003-04-04 | 2004-11-04 | Sony Corp | 電極およびそれを用いた電池 |
| US20050042128A1 (en) | 2003-08-22 | 2005-02-24 | Keiko Matsubara | Negative active material for rechargeable lithium battery, method of preparing same and rechargeable lithium battery |
| JP3746499B2 (ja) * | 2003-08-22 | 2006-02-15 | 三星エスディアイ株式会社 | リチウム二次電池用負極活物質及びその製造方法並びにリチウム二次電池 |
| US20050048369A1 (en) * | 2003-08-28 | 2005-03-03 | Matsushita Electric Industrial Co., Ltd. | Negative electrode for non-aqueous electrolyte secondary battery, production method thereof and non-aqueous electrolyte secondary battery |
| JP4526806B2 (ja) * | 2003-12-02 | 2010-08-18 | パナソニック株式会社 | リチウムイオン二次電池の製造方法 |
| JP2004224575A (ja) | 2004-05-13 | 2004-08-12 | Misawa Homes Co Ltd | エレベータ付き建物 |
| JP4646612B2 (ja) * | 2004-12-08 | 2011-03-09 | パナソニック株式会社 | 非水電解質二次電池用負極およびその製造法ならびに非水電解質二次電池 |
| JP4953583B2 (ja) * | 2005-03-29 | 2012-06-13 | 三洋電機株式会社 | リチウム二次電池 |
| JP5043338B2 (ja) * | 2006-01-19 | 2012-10-10 | パナソニック株式会社 | リチウム二次電池 |
| JP2007299580A (ja) | 2006-04-28 | 2007-11-15 | Matsushita Electric Ind Co Ltd | 非水電解質角型二次電池 |
| JP2008269827A (ja) * | 2007-04-17 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 電気化学素子の電極材料およびその製造方法並びにそれを用いた電極極板および電気化学素子 |
| JP2008294314A (ja) | 2007-05-28 | 2008-12-04 | Sanyo Electric Co Ltd | キャパシタ |
| US7816031B2 (en) * | 2007-08-10 | 2010-10-19 | The Board Of Trustees Of The Leland Stanford Junior University | Nanowire battery methods and arrangements |
| US9564629B2 (en) * | 2008-01-02 | 2017-02-07 | Nanotek Instruments, Inc. | Hybrid nano-filament anode compositions for lithium ion batteries |
| JP5196149B2 (ja) | 2008-02-07 | 2013-05-15 | 信越化学工業株式会社 | 非水電解質二次電池用負極材及びその製造方法並びにリチウムイオン二次電池及び電気化学キャパシタ |
| US20100129718A1 (en) * | 2008-02-14 | 2010-05-27 | Hiroshi Higuchi | Negative electrode for lithium secondary battery, lithium secondary battery comprising the same, and method for producing negative electrode for lithium secondary battery |
| JP4952746B2 (ja) * | 2008-11-14 | 2012-06-13 | ソニー株式会社 | リチウムイオン二次電池およびリチウムイオン二次電池用負極 |
| US8927156B2 (en) | 2009-02-19 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Power storage device |
| US8450012B2 (en) * | 2009-05-27 | 2013-05-28 | Amprius, Inc. | Interconnected hollow nanostructures containing high capacity active materials for use in rechargeable batteries |
| US9061902B2 (en) | 2009-12-18 | 2015-06-23 | The Board Of Trustees Of The Leland Stanford Junior University | Crystalline-amorphous nanowires for battery electrodes |
| JP5918150B2 (ja) * | 2010-03-03 | 2016-05-18 | アンプリウス、インコーポレイテッド | 活性材料を堆積させるためのテンプレート電極構造 |
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| CN102263233B (zh) | 2016-03-30 |
| CN105591074A (zh) | 2016-05-18 |
| CN105591074B (zh) | 2019-09-17 |
| CN102263233A (zh) | 2011-11-30 |
| US20110291240A1 (en) | 2011-12-01 |
| US8896098B2 (en) | 2014-11-25 |
| JP6127122B2 (ja) | 2017-05-10 |
| JP2012009429A (ja) | 2012-01-12 |
| JP2016085989A (ja) | 2016-05-19 |
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