JP5833398B2 - 配線基板及びその製造方法、半導体装置 - Google Patents

配線基板及びその製造方法、半導体装置 Download PDF

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Publication number
JP5833398B2
JP5833398B2 JP2011213528A JP2011213528A JP5833398B2 JP 5833398 B2 JP5833398 B2 JP 5833398B2 JP 2011213528 A JP2011213528 A JP 2011213528A JP 2011213528 A JP2011213528 A JP 2011213528A JP 5833398 B2 JP5833398 B2 JP 5833398B2
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Japan
Prior art keywords
layer
wiring
hole
core substrate
silicon
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JP2011213528A
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English (en)
Japanese (ja)
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JP2013033894A5 (enExample
JP2013033894A (ja
Inventor
堀内　道夫
道夫 堀内
徳武　安衛
安衛 徳武
勇一 松田
勇一 松田
山崎　智生
智生 山崎
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2011213528A priority Critical patent/JP5833398B2/ja
Priority to US13/528,987 priority patent/US9006586B2/en
Publication of JP2013033894A publication Critical patent/JP2013033894A/ja
Publication of JP2013033894A5 publication Critical patent/JP2013033894A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227—Other objects, e.g. metallic pieces
    • H05K2201/10378—Interposers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2011213528A 2011-06-27 2011-09-28 配線基板及びその製造方法、半導体装置 Active JP5833398B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011213528A JP5833398B2 (ja) 2011-06-27 2011-09-28 配線基板及びその製造方法、半導体装置
US13/528,987 US9006586B2 (en) 2011-06-27 2012-06-21 Wiring substrate, its manufacturing method, and semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011142202 2011-06-27
JP2011142202 2011-06-27
JP2011213528A JP5833398B2 (ja) 2011-06-27 2011-09-28 配線基板及びその製造方法、半導体装置

Publications (3)

Publication Number Publication Date
JP2013033894A JP2013033894A (ja) 2013-02-14
JP2013033894A5 JP2013033894A5 (enExample) 2014-08-14
JP5833398B2 true JP5833398B2 (ja) 2015-12-16

Family

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US (1) US9006586B2 (enExample)
JP (1) JP5833398B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5602584B2 (ja) * 2010-10-28 2014-10-08 新光電気工業株式会社 配線基板及びその製造方法
US8610280B2 (en) * 2011-09-16 2013-12-17 Micron Technology, Inc. Platinum-containing constructions, and methods of forming platinum-containing constructions
US20140151095A1 (en) * 2012-12-05 2014-06-05 Samsung Electro-Mechanics Co., Ltd. Printed circuit board and method for manufacturing the same
JP6013960B2 (ja) * 2013-03-28 2016-10-25 京セラ株式会社 配線基板
CN104185365B (zh) * 2013-05-23 2018-06-26 比亚迪股份有限公司 一种线路板及其制备方法
KR102171020B1 (ko) * 2013-10-16 2020-10-29 삼성전자주식회사 엑스레이 흡수 필터를 갖는 엑스레이 시스템, 반도체 패키지, 및 트레이
JP5994825B2 (ja) 2014-08-06 2016-09-21 大日本印刷株式会社 貫通電極基板及びその製造方法、並びに貫通電極基板を用いた半導体装置
KR102033317B1 (ko) * 2014-09-30 2019-11-08 가부시키가이샤 무라타 세이사쿠쇼 다층 기판
JP7266542B2 (ja) * 2020-02-03 2023-04-28 株式会社東芝 電流測定装置
EP4040926A1 (en) 2021-02-09 2022-08-10 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Component carriers connected by staggered interconnect elements

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60169194A (ja) * 1984-02-13 1985-09-02 松下電器産業株式会社 ハイブリツド集積回路用基板
US4712161A (en) 1985-03-25 1987-12-08 Olin Corporation Hybrid and multi-layer circuitry
JPH0247892A (ja) * 1988-08-10 1990-02-16 Hitachi Ltd セラミック多層配線基板
JPH0797705B2 (ja) * 1989-07-17 1995-10-18 日本電気株式会社 多層セラミツク基板
JPH06268376A (ja) * 1993-03-15 1994-09-22 Fujitsu Ltd 多層回路基板の製造方法
JPH10284836A (ja) * 1997-04-08 1998-10-23 Hitachi Ltd セラミック一括積層配線基板及びその製造方法
JP2001308532A (ja) * 2000-04-25 2001-11-02 Toshiba Chem Corp プリント配線板およびプリント配線板の製造方法
US20030213617A1 (en) * 2002-05-20 2003-11-20 Subramanian Karthikeyan Method and structure of a reducing intra-level and inter-level capacitance of a semiconductor device
JP4401070B2 (ja) * 2002-02-05 2010-01-20 ソニー株式会社 半導体装置内蔵多層配線基板及びその製造方法
JP2004193505A (ja) * 2002-12-13 2004-07-08 Kyocera Corp 配線基板
KR100537892B1 (ko) 2003-08-26 2005-12-21 삼성전자주식회사 칩 스택 패키지와 그 제조 방법
EP1677349A4 (en) * 2004-02-24 2010-12-01 Ibiden Co Ltd SUBSTRATE FOR MOUNTING A SEMICONDUCTOR
JP2007201254A (ja) * 2006-01-27 2007-08-09 Ibiden Co Ltd 半導体素子内蔵基板、半導体素子内蔵型多層回路基板
JP2009135321A (ja) * 2007-11-30 2009-06-18 Shinko Electric Ind Co Ltd 多層配線基板及びその製造方法ならびに半導体装置
JP5249132B2 (ja) * 2009-06-03 2013-07-31 新光電気工業株式会社 配線基板
JP5426261B2 (ja) * 2009-07-17 2014-02-26 新光電気工業株式会社 半導体装置
JP5367523B2 (ja) * 2009-09-25 2013-12-11 新光電気工業株式会社 配線基板及び配線基板の製造方法
JP5590869B2 (ja) * 2009-12-07 2014-09-17 新光電気工業株式会社 配線基板及びその製造方法並びに半導体パッケージ
JP5413597B2 (ja) 2010-03-01 2014-02-12 新光電気工業株式会社 配線基板

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US9006586B2 (en) 2015-04-14
US20120327626A1 (en) 2012-12-27
JP2013033894A (ja) 2013-02-14

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