JP5825692B2 - トンネル誘電体層を伴う太陽電池の製造方法 - Google Patents

トンネル誘電体層を伴う太陽電池の製造方法 Download PDF

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JP5825692B2
JP5825692B2 JP2013518387A JP2013518387A JP5825692B2 JP 5825692 B2 JP5825692 B2 JP 5825692B2 JP 2013518387 A JP2013518387 A JP 2013518387A JP 2013518387 A JP2013518387 A JP 2013518387A JP 5825692 B2 JP5825692 B2 JP 5825692B2
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solar cell
manufacturing
oxide layer
substrate
layer
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JP2013529857A (ja
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デニス、ティム
ハリングトン、スコット
マニング、ジェーン
スミス、デーヴィッド
ワルドハウアー、アン
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SunPower Corp
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)
JP2013518387A 2010-07-02 2011-04-27 トンネル誘電体層を伴う太陽電池の製造方法 Active JP5825692B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/829,922 2010-07-02
US12/829,922 US8334161B2 (en) 2010-07-02 2010-07-02 Method of fabricating a solar cell with a tunnel dielectric layer
PCT/US2011/034089 WO2012003038A2 (en) 2010-07-02 2011-04-27 Method of fabricating a solar cell with a tunnel dielectric layer

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JP2015134234A Division JP6082060B2 (ja) 2010-07-02 2015-07-03 トンネル誘電体層を伴う太陽電池の製造方法

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JP2013529857A JP2013529857A (ja) 2013-07-22
JP5825692B2 true JP5825692B2 (ja) 2015-12-02

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JP2013518387A Active JP5825692B2 (ja) 2010-07-02 2011-04-27 トンネル誘電体層を伴う太陽電池の製造方法
JP2015134234A Active JP6082060B2 (ja) 2010-07-02 2015-07-03 トンネル誘電体層を伴う太陽電池の製造方法
JP2017007996A Active JP6519820B2 (ja) 2010-07-02 2017-01-19 トンネル誘電体層を伴う太陽電池の製造方法
JP2019017477A Pending JP2019091919A (ja) 2010-07-02 2019-02-01 トンネル誘電体層を伴う太陽電池の製造方法

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JP2015134234A Active JP6082060B2 (ja) 2010-07-02 2015-07-03 トンネル誘電体層を伴う太陽電池の製造方法
JP2017007996A Active JP6519820B2 (ja) 2010-07-02 2017-01-19 トンネル誘電体層を伴う太陽電池の製造方法
JP2019017477A Pending JP2019091919A (ja) 2010-07-02 2019-02-01 トンネル誘電体層を伴う太陽電池の製造方法

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US (4) US8334161B2 (ko)
EP (1) EP2589087A4 (ko)
JP (4) JP5825692B2 (ko)
KR (3) KR102007102B1 (ko)
CN (2) CN102959731B (ko)
AU (1) AU2011271682B2 (ko)
WO (1) WO2012003038A2 (ko)

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JP2019091919A (ja) * 2010-07-02 2019-06-13 サンパワー コーポレイション トンネル誘電体層を伴う太陽電池の製造方法

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KR101661948B1 (ko) * 2014-04-08 2016-10-04 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR101613846B1 (ko) 2014-06-10 2016-04-20 엘지전자 주식회사 태양 전지 및 이의 제조 방법
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JP6219913B2 (ja) 2014-11-28 2017-10-25 エルジー エレクトロニクス インコーポレイティド 太陽電池及びその製造方法
KR102272433B1 (ko) 2015-06-30 2021-07-05 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN106784069A (zh) * 2015-11-20 2017-05-31 上海神舟新能源发展有限公司 背表面隧道氧化钝化交指式背结背接触电池制作方法
US10367115B2 (en) 2016-01-29 2019-07-30 Lg Electronics Inc. Method of manufacturing solar cell
CN110061096B (zh) 2016-01-29 2023-02-28 上饶市晶科绿能科技发展有限公司 制造太阳能电池的方法
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USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
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USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
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