JP5823890B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP5823890B2 JP5823890B2 JP2012041557A JP2012041557A JP5823890B2 JP 5823890 B2 JP5823890 B2 JP 5823890B2 JP 2012041557 A JP2012041557 A JP 2012041557A JP 2012041557 A JP2012041557 A JP 2012041557A JP 5823890 B2 JP5823890 B2 JP 5823890B2
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- electrode
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- light
- light emitting
- emitting device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/86—Series electrical configurations of multiple OLEDs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
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Description
そこで、本発明では、上記課題の少なくとも1を解決しつつ、コンタクト抵抗を低下させ、消費電力のより小さい発光装置又は照明装置を提供することを課題とする。
また、本発明の他の構成は、上記構成において、輪郭が凹凸形状を有していることを特徴とする発光装置である。
図1は本発明の一態様である発光装置の断面の模式図である。なお、ここでは、本発明の発光装置の一部を抜き出して図示している。図1(A)は、EL素子を有する発光装置200の断面概略図である。発光装置200は、絶縁表面を有する基板101上に、当該基板に近いほうから第1の電極203、EL層205、第2の電極207が設けられ、これらが接して形成されている部分が発光領域220となるEL素子を有している。
絶縁層209aは少なくとも第2の電極207aと配線213との接触を防ぐことができる程度に形成されていれば良いが、その分離層211側の端部が分離層211底部輪郭に接触するように形成されていることで、より確実にEL素子aの第2の電極207aと配線213との接触を抑制することができる。
次に発光領域の他の辺及びその対辺の長さを伸ばさず、直列接続部が形成される辺およびその対辺のみ拡大した場合を考える。この場合、直列接続部も発光領域も一次元のみの拡大であるので、直列接続部の接触抵抗による問題は悪化もしないが、改善もされない。
最後に、直列接続部が形成される辺およびその対辺を拡大し、その他の辺及びその対辺を縮小した場合、直列接続部の接触抵抗による問題は改善されるが、発光領域に対する、直列接続部(非発光領域)の形成領域が大幅に増加するため、開口率が低下してしまう。また、直列に接続するEL素子の段数が増えるため、駆動電圧が高くなるなどの問題がある。
なお、本実施の形態の発光装置における分離層211の輪郭の形状は上記のものに限られない。
図4は実施の形態1とは異なる本発明の一態様である発光装置の断面図である。なおここでは、本発明の発光装置の一部を抜き出して図示している。図4の発光装置は図1の発光装置と同様に、絶縁表面を有する基板101上に当該基板に近いほうから第1の電極303、EL層305、第2の電極307が設けられ、これらが接して形成されている部分が発光領域320となるEL素子を有している。EL素子は、発光を取り出す側の電極層にEL素子からの発光に対する透光性を有する材料を設ける。例えば上面発光型であれば第2の電極307に、下面発光型であれば第1の電極303に、また両面発光型であれば、両方の電極層に透光性を有する導電性材料を用いる。
本実施の形態では、実施の形態3で説明した発光装置300内の各構成に用いることのできる材料の一例と、その形成方法について説明する。
発光装置300が下面発光型、両面発光型の場合、基板101の材料としては、ガラス、石英、有機樹脂などの透光性を有する材料を用いることができる。また上面発光型の場合は、透光性を有していなくともよく、上記の材料に加え金属、半導体、セラミック、有色の有機樹脂などの材料を用いることができる。導電性の基板を用いる場合、その表面を酸化させる、または表面に絶縁膜を形成することにより絶縁性を持たせることが好ましい。
下面発光型、両面発光型の発光装置の場合、封止膜・下地膜は、透光性且つバリア性を有する材料を用いて形成することができる。上面発光型の発光装置では、必ずしも透光性を有していなくともよい。
分離層は無機絶縁材料、有機絶縁材料を用いて形成することができる。例えば、ネガ型やポジ型の感光性を有する樹脂材料、非感光性の樹脂材料などを用いることができる。
配線の材料としては、銅(Cu)、チタン(Ti)、タンタル(Ta)、タングステン(W)、モリブデン(Mo)、クロム(Cr)、ネオジム(Nd)、スカンジウム(Sc)、ニッケル(Ni)、から選ばれた材料又はこれらを主成分とする合金材料を用いて、単層で又は積層して形成する。また、配線の材料としてアルミニウムを用いることもできるが、その場合にはITOなどと直接接して設けると腐食する恐れがある。よって、配線を積層構造とし、ITOなどと接しない層にアルミニウムを用いればよい。また銅は抵抗が低いため、好適に用いることができる。配線の膜厚は、100nm以上35μm以下とすることが好ましい。
隔壁の材料としては、例えば、ポリイミド、アクリル、ポリアミド、エポキシ等の有機樹脂、無機絶縁材料を用いることができる。
平坦化膜を用いる場合は、無機絶縁材料又は有機絶縁材料を用いて形成することができる。なお、アクリル樹脂、ポリイミド、ベンゾシクロブテン系樹脂、ポリアミド、エポキシ樹脂等の、耐熱性を有する有機絶縁材料を用いると、平坦化絶縁膜として好適である。また上記有機絶縁材料の他に、低誘電率材料(low−k材料)、シロキサン系樹脂、PSG(リンガラス)、BPSG(リンボロンガラス)等を用いることができる。なお、これらの材料で形成される絶縁膜を複数積層させることで、平坦化膜を形成してもよい。
陽極側から光を取り出す場合には、前述の透光性を有する導電性金属酸化物を用いればよい。また、その他の材料を用いる場合には透光性を有する程度に薄く形成することによって透光性を有せしめることが可能である。なお、複数の材料による積層構造を有していても良い。
なお、EL層103の陽極と接する面に後述の複合材料を用いることによって、仕事関数の大小にかかわらず、電極材料を選択することができるようになる。
陰極側から光を取り出す場合には、充分な透光性を有する程度にこれら材料を薄く形成することによって透明導電膜として用いることができる。また、これらの材料を透光性を有する程度に薄く形成したのち、上述の透光性を有する導電性金属酸化物と積層しても良い。
なお、EL層103の陰極に、アルカリ金属又はアルカリ土類金属又はそれらの化合物、又は電子輸送性物質に、当該電子輸送性物質に対して電子供与性を示す物質を添加した材料(以下ドナー準位を有する材料と称する)を用いることによって、仕事関数の大小にかかわらず電極材料を選択することができるようになる。すなわち、ITOに代表される酸化物透明導電膜を陰極の材料として用いることができる。また、複合材料からなる層とドナー準位を有する材料からなる層との積層体からなる電荷発生層を用いても同様の効果を得ることができる(但し、この場合は複合材料からなる層が陰極と接することとする)。
図8(B)においては、二つの発光ユニット(第1の発光ユニット800及び第2の発光ユニット801)が積層されている構成を例示したが、3層以上の発光ユニットを積層することも可能である。この際も各発光ユニットの間には電荷発生層が設けられていることが好ましい。
これらの層の詳しい説明は上述したとおりであるので繰り返しとなる説明を省略する。図8(A)におけるEL層103の説明を参照されたい。
本実施の形態では、上記実施の形態で例示した発光装置が適用された、上面発光型の照明装置の例について図9を用いて説明する。
本実施の形態では、本発明の一態様により形成された発光装置を用いた照明装置について図10及び図11を用いて説明する。
103 EL層
200 発光装置
203 第1の電極
203a 第1の電極
203b 第1の電極
205 EL層
205a EL層
205b EL層
207 第2の電極
207a 第2の電極
207b 第2の電極
209 絶縁層
209a 絶縁層
209b 絶縁層
211 分離層
211a 脚部
211b 台部
213 配線
220 発光領域
220a 発光領域
220b 発光領域
300 発光装置
303 第1の電極
303a 第1の電極
303b 第1の電極
305 EL層
307 第2の電極
307a 第2の電極
307b 第2の電極
309 絶縁層
309a 絶縁層
309b 絶縁層
311 分離層
311a 脚部
311b 台部
313 導電層
315a 配線
315b 配線
317a コンタクト領域
317b コンタクト領域
319 接続配線
320 発光領域
320a 発光領域
320b 発光領域
350a 直列接続部
350b 直列接続部
350c 直列接続部
350d 直列接続部
370 補助配線
400 照明装置
401a 第1の基板
401b 第2の基板
403 発光装置
405a シール材
405b シール材
407a 第1のガラス層
407b 第2のガラス層
409 コンバータ
420 照明装置
702 陽極
704 陰極
711 正孔注入層
712 正孔輸送層
713 発光層
714 電子輸送層
715 電子注入層
800 発光ユニット
801 発光ユニット
803 電荷発生層
3000 照明装置
3001 天井固定型照明装置
3002 壁掛け型照明装置
7501 照明部
7502 傘
7503 可変アーム
7504 支柱
7505 台
7506 電源スイッチ
Claims (2)
- 絶縁表面の上方に設けられた発光素子と、分離層と、導電層と、を有し、
前記発光素子は、
前記絶縁表面の上方の第1の電極と、
前記第1の電極の上方の第2の電極と、
前記第1の電極と前記第2の電極との間に設けられた発光物質を含む有機化合物層と、
を有し、
前記分離層は、前記発光素子の発光領域の一辺に沿って設けられ、下層部と、上層部と、を有し、
前記上層部は、前記下層部よりも突き出した形状を有し、
前記導電層は、前記分離層の下方に設けられ、前記第1の電極と電気的に分離しており、
前記発光領域の前記有機化合物層と前記第2の電極とは、前記上層部の下方まで延在し、
前記上層部の下方において、前記第2の電極は前記導電層と接する領域を有し、
前記絶縁表面に垂直な方向からみた場合に、前記発光領域に面する前記上層部の輪郭は、凹凸形状を有することを特徴とする発光装置。 - 請求項1において、
前記導電層は前記第1の電極と同じ材料で形成されることを特徴とする発光装置。
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2012
- 2012-02-24 TW TW101106286A patent/TWI562423B/zh not_active IP Right Cessation
- 2012-02-28 JP JP2012041557A patent/JP5823890B2/ja not_active Expired - Fee Related
- 2012-02-29 KR KR1020120021175A patent/KR101974082B1/ko active IP Right Grant
- 2012-03-01 US US13/409,814 patent/US8928011B2/en not_active Expired - Fee Related
- 2012-03-02 CN CN201210051611.XA patent/CN102655220B/zh not_active Expired - Fee Related
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Publication number | Publication date |
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CN102655220B (zh) | 2016-06-15 |
US20120223342A1 (en) | 2012-09-06 |
TWI562423B (en) | 2016-12-11 |
US8928011B2 (en) | 2015-01-06 |
TW201244205A (en) | 2012-11-01 |
CN102655220A (zh) | 2012-09-05 |
KR20120100779A (ko) | 2012-09-12 |
JP2012195288A (ja) | 2012-10-11 |
KR101974082B1 (ko) | 2019-04-30 |
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