JP5821689B2 - 基板処理装置、基板処理方法及び記憶媒体 - Google Patents

基板処理装置、基板処理方法及び記憶媒体 Download PDF

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Publication number
JP5821689B2
JP5821689B2 JP2012038947A JP2012038947A JP5821689B2 JP 5821689 B2 JP5821689 B2 JP 5821689B2 JP 2012038947 A JP2012038947 A JP 2012038947A JP 2012038947 A JP2012038947 A JP 2012038947A JP 5821689 B2 JP5821689 B2 JP 5821689B2
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substrate
control
job
control job
executed
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Japanese (ja)
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JP2012235087A (ja
JP2012235087A5 (enExample
Inventor
丈志 松本
丈志 松本
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2012038947A priority Critical patent/JP5821689B2/ja
Priority to US13/450,590 priority patent/US9396978B2/en
Priority to KR1020120040979A priority patent/KR101842242B1/ko
Priority to TW101113942A priority patent/TWI525733B/zh
Publication of JP2012235087A publication Critical patent/JP2012235087A/ja
Publication of JP2012235087A5 publication Critical patent/JP2012235087A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3218—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/18—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] characterised by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/19—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers
    • H10P72/1921—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers characterised by substrate supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H10P72/3406—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door or cover

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
JP2012038947A 2011-04-20 2012-02-24 基板処理装置、基板処理方法及び記憶媒体 Active JP5821689B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012038947A JP5821689B2 (ja) 2011-04-20 2012-02-24 基板処理装置、基板処理方法及び記憶媒体
US13/450,590 US9396978B2 (en) 2011-04-20 2012-04-19 Substrate processing apparatus, substrate processing method and storage medium
KR1020120040979A KR101842242B1 (ko) 2011-04-20 2012-04-19 기판 처리 장치, 기판 처리 방법 및 기억 매체
TW101113942A TWI525733B (zh) 2011-04-20 2012-04-19 A substrate processing apparatus, a substrate processing method, and a memory medium

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011094015 2011-04-20
JP2011094015 2011-04-20
JP2012038947A JP5821689B2 (ja) 2011-04-20 2012-02-24 基板処理装置、基板処理方法及び記憶媒体

Publications (3)

Publication Number Publication Date
JP2012235087A JP2012235087A (ja) 2012-11-29
JP2012235087A5 JP2012235087A5 (enExample) 2014-03-06
JP5821689B2 true JP5821689B2 (ja) 2015-11-24

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JP2012038947A Active JP5821689B2 (ja) 2011-04-20 2012-02-24 基板処理装置、基板処理方法及び記憶媒体

Country Status (4)

Country Link
US (1) US9396978B2 (enExample)
JP (1) JP5821689B2 (enExample)
KR (1) KR101842242B1 (enExample)
TW (1) TWI525733B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5006122B2 (ja) 2007-06-29 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5128918B2 (ja) * 2007-11-30 2013-01-23 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5179170B2 (ja) 2007-12-28 2013-04-10 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5001828B2 (ja) 2007-12-28 2012-08-15 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP6097569B2 (ja) * 2013-01-17 2017-03-15 株式会社Ｓｃｒｅｅｎセミコンダクターソリューションズ 基板処理装置および基板処理列制御方法
JP5987796B2 (ja) * 2013-07-24 2016-09-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6216193B2 (ja) * 2013-09-11 2017-10-18 株式会社荏原製作所 ユニット制御盤、基板の受け渡しテスト方法、及び基板処理装置
US10522472B2 (en) 2016-09-08 2019-12-31 Asml Netherlands B.V. Secure chips with serial numbers
US10418324B2 (en) 2016-10-27 2019-09-17 Asml Netherlands B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system
JP7170438B2 (ja) * 2018-07-03 2022-11-14 東京エレクトロン株式会社 基板処理装置及び判定方法
JP7254163B2 (ja) * 2019-03-28 2023-04-07 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7235597B2 (ja) * 2019-06-03 2023-03-08 株式会社ディスコ 加工装置
JP7454467B2 (ja) * 2020-08-03 2024-03-22 株式会社荏原製作所 基板処理システム、基板処理システムの制御装置及び基板処理システムの運転方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6714832B1 (en) * 1996-09-11 2004-03-30 Hitachi, Ltd. Operating method of vacuum processing system and vacuum processing system
JP2001093791A (ja) * 1999-09-20 2001-04-06 Hitachi Ltd 真空処理装置の運転方法及びウエハの処理方法
US6618682B2 (en) * 2001-04-20 2003-09-09 International Business Machines Corporation Method for test optimization using historical and actual fabrication test data
JP4557986B2 (ja) * 2004-11-24 2010-10-06 株式会社日立国際電気 基板処理装置及び半導体デバイスの製造方法
US9305814B2 (en) * 2004-12-20 2016-04-05 Tokyo Electron Limited Method of inspecting substrate processing apparatus and storage medium storing inspection program for executing the method
JP4560022B2 (ja) * 2006-09-12 2010-10-13 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像装置の制御方法並びに記憶媒体
JP4828503B2 (ja) * 2007-10-16 2011-11-30 東京エレクトロン株式会社 基板処理装置、基板搬送方法、コンピュータプログラムおよび記憶媒体
JP5552265B2 (ja) * 2009-06-24 2014-07-16 東京エレクトロン株式会社 基板処理装置の制御方法及び記憶媒体
JP5575507B2 (ja) * 2010-03-02 2014-08-20 株式会社日立国際電気 基板処理装置、基板搬送方法、半導体装置の製造方法および基板処理装置のメンテナンス方法

Also Published As

Publication number Publication date
TW201308477A (zh) 2013-02-16
KR101842242B1 (ko) 2018-05-14
US20120271444A1 (en) 2012-10-25
TWI525733B (zh) 2016-03-11
JP2012235087A (ja) 2012-11-29
KR20120120051A (ko) 2012-11-01
US9396978B2 (en) 2016-07-19

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