KR101842242B1 - 기판 처리 장치, 기판 처리 방법 및 기억 매체 - Google Patents

기판 처리 장치, 기판 처리 방법 및 기억 매체 Download PDF

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KR101842242B1
KR101842242B1 KR1020120040979A KR20120040979A KR101842242B1 KR 101842242 B1 KR101842242 B1 KR 101842242B1 KR 1020120040979 A KR1020120040979 A KR 1020120040979A KR 20120040979 A KR20120040979 A KR 20120040979A KR 101842242 B1 KR101842242 B1 KR 101842242B1
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control
substrate
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executed
recipe
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KR20120120051A (ko
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타케시 마츠모토
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3218—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/18—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] characterised by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/19—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers
    • H10P72/1921—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] closed carriers characterised by substrate supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3304—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber characterised by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/34—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H10P72/3406—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door or cover

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
KR1020120040979A 2011-04-20 2012-04-19 기판 처리 장치, 기판 처리 방법 및 기억 매체 Active KR101842242B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011094015 2011-04-20
JPJP-P-2011-094015 2011-04-20
JPJP-P-2012-038947 2012-02-24
JP2012038947A JP5821689B2 (ja) 2011-04-20 2012-02-24 基板処理装置、基板処理方法及び記憶媒体

Publications (2)

Publication Number Publication Date
KR20120120051A KR20120120051A (ko) 2012-11-01
KR101842242B1 true KR101842242B1 (ko) 2018-05-14

Family

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KR1020120040979A Active KR101842242B1 (ko) 2011-04-20 2012-04-19 기판 처리 장치, 기판 처리 방법 및 기억 매체

Country Status (4)

Country Link
US (1) US9396978B2 (enExample)
JP (1) JP5821689B2 (enExample)
KR (1) KR101842242B1 (enExample)
TW (1) TWI525733B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5006122B2 (ja) 2007-06-29 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5128918B2 (ja) * 2007-11-30 2013-01-23 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5179170B2 (ja) 2007-12-28 2013-04-10 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP5001828B2 (ja) 2007-12-28 2012-08-15 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP6097569B2 (ja) * 2013-01-17 2017-03-15 株式会社Ｓｃｒｅｅｎセミコンダクターソリューションズ 基板処理装置および基板処理列制御方法
JP5987796B2 (ja) * 2013-07-24 2016-09-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6216193B2 (ja) * 2013-09-11 2017-10-18 株式会社荏原製作所 ユニット制御盤、基板の受け渡しテスト方法、及び基板処理装置
US10522472B2 (en) 2016-09-08 2019-12-31 Asml Netherlands B.V. Secure chips with serial numbers
US10418324B2 (en) 2016-10-27 2019-09-17 Asml Netherlands B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system
JP7170438B2 (ja) * 2018-07-03 2022-11-14 東京エレクトロン株式会社 基板処理装置及び判定方法
JP7254163B2 (ja) * 2019-03-28 2023-04-07 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7235597B2 (ja) * 2019-06-03 2023-03-08 株式会社ディスコ 加工装置
JP7454467B2 (ja) * 2020-08-03 2024-03-22 株式会社荏原製作所 基板処理システム、基板処理システムの制御装置及び基板処理システムの運転方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001093791A (ja) * 1999-09-20 2001-04-06 Hitachi Ltd 真空処理装置の運転方法及びウエハの処理方法
JP2011009342A (ja) 2009-06-24 2011-01-13 Tokyo Electron Ltd 基板処理装置の制御方法及び記憶媒体

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6714832B1 (en) * 1996-09-11 2004-03-30 Hitachi, Ltd. Operating method of vacuum processing system and vacuum processing system
US6618682B2 (en) * 2001-04-20 2003-09-09 International Business Machines Corporation Method for test optimization using historical and actual fabrication test data
JP4557986B2 (ja) * 2004-11-24 2010-10-06 株式会社日立国際電気 基板処理装置及び半導体デバイスの製造方法
US9305814B2 (en) * 2004-12-20 2016-04-05 Tokyo Electron Limited Method of inspecting substrate processing apparatus and storage medium storing inspection program for executing the method
JP4560022B2 (ja) * 2006-09-12 2010-10-13 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像装置の制御方法並びに記憶媒体
JP4828503B2 (ja) * 2007-10-16 2011-11-30 東京エレクトロン株式会社 基板処理装置、基板搬送方法、コンピュータプログラムおよび記憶媒体
JP5575507B2 (ja) * 2010-03-02 2014-08-20 株式会社日立国際電気 基板処理装置、基板搬送方法、半導体装置の製造方法および基板処理装置のメンテナンス方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001093791A (ja) * 1999-09-20 2001-04-06 Hitachi Ltd 真空処理装置の運転方法及びウエハの処理方法
JP2011009342A (ja) 2009-06-24 2011-01-13 Tokyo Electron Ltd 基板処理装置の制御方法及び記憶媒体

Also Published As

Publication number Publication date
TW201308477A (zh) 2013-02-16
JP5821689B2 (ja) 2015-11-24
US20120271444A1 (en) 2012-10-25
TWI525733B (zh) 2016-03-11
JP2012235087A (ja) 2012-11-29
KR20120120051A (ko) 2012-11-01
US9396978B2 (en) 2016-07-19

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