JP5798626B2 - 表示パネル装置及びその製造方法 - Google Patents
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
以下、本発明に係る表示パネル装置及びその製造方法について、実施の形態に基づいて説明するが、本発明は、請求の範囲の記載に基づいて特定される。よって、以下の実施の形態における構成要素のうち、請求項に記載されていない構成要素は、本発明の課題を達成するのに必ずしも必要ではないが、より好ましい形態を構成するものとして説明される。なお、各図は、模式図であり、必ずしも厳密に図示したものではない。
2 ゲート電極
3 ゲート絶縁膜
4 ソース電極
5 ドレイン電極
6 第1隔壁部
6a 残渣
6R 隔壁層
7 半導体層
8 絶縁層
8H コンタクトホール
9 下部電極
10 第2隔壁部
11 有機層
12 上部電極
13 封止層
14 封止基板
41 第1ソース電極
42 第2ソース電極
42a、52a 酸化膜
51 第1ドレイン電極
52 第2ドレイン電極
100 表示パネル装置
101 アクティブマトリクス基板
102 画素
110、111 薄膜トランジスタ
110G、111G ゲート電極
110S、111S ソース電極
110D、111D ドレイン電極
120 有機EL素子
130 ソース配線
140 ゲート配線
150 電源線
160 コンデンサ
HM 高密度金属膜
LM 低密度金属膜
Claims (10)
- 基板と、
前記基板上に形成されたゲート電極と、
前記ゲート電極上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成された第1ソース電極と、
前記第1ソース電極上に形成された第2ソース電極と、
前記ゲート絶縁膜上に形成された第1ドレイン電極と、
前記第1ドレイン電極上に形成された第2ドレイン電極と、
少なくとも前記第2ソース電極の一部及び前記第2ドレイン電極の一部を露出する開口を有する隔壁部と、
前記開口内に形成された半導体層と、
前記半導体層の上方に形成された絶縁層と、
前記絶縁層上に形成された画素電極と、
前記絶縁層に形成され、前記画素電極と前記第2ドレイン電極又は前記第2ソース電極とを接続するためのコンタクトホールと、を含み、
前記第2ソース電極及び前記第2ドレイン電極は、前記第1ソース電極及び前記第1ドレイン電極よりも膜密度が低い疎である膜構造を有し、
前記開口内においては、前記第2ソース電極及び第2ドレイン電極は前記第2ソース電極及び前記第2ドレイン電極の材料の酸化膜を介して前記半導体層と接しており、
前記コンタクトホール内の領域においては、前記第2ドレイン電極又は前記第2ソース電極は前記第2ソース電極及び前記第2ドレイン電極の材料の酸化膜を介さず前記画素電極と接する
表示パネル装置。 - 前記第1ソース電極及び前記第1ドレイン電極のシート抵抗は、前記第2ソース電極及び前記第2ドレイン電極のシート抵抗よりも小さい、
請求項1に記載の表示パネル装置。 - 前記第1ソース電極及び前記第1ドレイン電極のシート抵抗は、0.5〜5Ω/□であり、
前記第2ソース電極及び前記第2ドレイン電極のシート抵抗は、80〜140Ω/□である、
請求項2に記載の表示パネル装置。 - 前記第2ドレイン電極は、前記半導体層と接する部分における膜厚が前記半導体層と接しない部分における膜厚よりも薄く、かつ、前記コンタクトホールに対応する部分に窪み部が形成されている、
請求項1〜3のいずれか1項に記載の表示パネル装置。 - 前記第2ソース電極及び前記第2ドレイン電極の膜厚は、20nm以上である、
請求項1〜4のいずれか1項に記載の表示パネル装置。 - 基板上にゲート電極を形成する第1工程と、
前記ゲート電極上にゲート絶縁膜を形成する第2工程と、
前記ゲート絶縁膜上に第1金属膜を形成する第3工程と、
前記第1金属膜上に、当該第1金属膜よりも膜密度が低い疎である膜構造を有する第2金属膜を形成する第4工程と、
前記第1金属膜及び前記第2金属膜をパターニングすることにより、ソース電極及びドレイン電極を形成する第5工程と、
前記ソース電極及び前記ドレイン電極上に隔壁層を形成する第6工程と、
前記隔壁層をパターニングすることにより、前記ソース電極と前記ドレイン電極との間における前記ゲート絶縁膜と、前記ソース電極及び前記ドレイン電極の一部とを露出するように開口を形成することで隔壁を形成する第7工程と、
前記開口内において、半導体層を形成する第8工程と、
前記半導体層の上方に絶縁層を形成する第9工程と、
前記隔壁を挟んで前記半導体層とは反対側の領域における前記ドレイン電極上の前記絶縁層にコンタクトホールを形成して前記ドレイン電極を露出する第10工程と、
前記絶縁層上及び前記コンタクトホールから露出する前記ドレイン電極上に画素電極を形成する第11工程と、を含み、
前記第8工程においては、前記ソース電極及び前記ドレイン電極上に前記第2金属膜の酸化膜を形成した後、前記半導体層を前記酸化膜上に形成し、
前記第11工程においては、前記ドレイン電極上に前記第2金属膜の酸化膜を介さず前記画素電極を形成する
表示パネル装置の製造方法。 - 前記第7工程において、前記隔壁層に前記開口を形成する際に前記第2金属膜の上層の一部を除去すると同時に、当該第2金属膜上における前記隔壁層の残渣を除去する、
請求項6に記載の表示パネル装置の製造方法。 - 前記第7工程において、前記第2金属膜の上層の一部を除去した後、前記第2金属膜上に前記第2金属膜の酸化膜を形成する、
請求項7に記載の表示パネル装置の製造方法。 - 前記第10工程と前記第11工程との間に、前記コンタクトホールから露出する前記ドレイン電極に形成された表面酸化膜を除去する工程を含む、
請求項6又は8に記載の表示パネル装置の製造方法。 - 前記表面酸化膜を除去する工程において、前記コンタクトホールから露出する前記ドレイン電極における前記第2金属膜に窪み部が形成される、
請求項9に記載の表示パネル装置の製造方法。
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