JP5797932B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5797932B2
JP5797932B2 JP2011110446A JP2011110446A JP5797932B2 JP 5797932 B2 JP5797932 B2 JP 5797932B2 JP 2011110446 A JP2011110446 A JP 2011110446A JP 2011110446 A JP2011110446 A JP 2011110446A JP 5797932 B2 JP5797932 B2 JP 5797932B2
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Prior art keywords
layer
insulating layer
oxide
transistor
oxide semiconductor
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Japanese (ja)
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JP2012009835A (ja
JP2012009835A5 (cg-RX-API-DMAC7.html
Inventor
佑太 遠藤
佑太 遠藤
俊成 佐々木
俊成 佐々木
耕生 野田
耕生 野田
瑞穂 佐藤
瑞穂 佐藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2012009835A5 publication Critical patent/JP2012009835A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
JP2011110446A 2010-05-21 2011-05-17 半導体装置 Active JP5797932B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011110446A JP5797932B2 (ja) 2010-05-21 2011-05-17 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010117743 2010-05-21
JP2010117743 2010-05-21
JP2011110446A JP5797932B2 (ja) 2010-05-21 2011-05-17 半導体装置

Related Child Applications (1)

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JP2015162443A Division JP6125581B2 (ja) 2010-05-21 2015-08-20 半導体装置

Publications (3)

Publication Number Publication Date
JP2012009835A JP2012009835A (ja) 2012-01-12
JP2012009835A5 JP2012009835A5 (cg-RX-API-DMAC7.html) 2014-06-19
JP5797932B2 true JP5797932B2 (ja) 2015-10-21

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JP2011110446A Active JP5797932B2 (ja) 2010-05-21 2011-05-17 半導体装置
JP2015162443A Active JP6125581B2 (ja) 2010-05-21 2015-08-20 半導体装置
JP2017075180A Withdrawn JP2017135404A (ja) 2010-05-21 2017-04-05 半導体装置
JP2018187337A Active JP6595685B2 (ja) 2010-05-21 2018-10-02 トランジスタ
JP2019174910A Withdrawn JP2020014010A (ja) 2010-05-21 2019-09-26 トランジスタ

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JP2015162443A Active JP6125581B2 (ja) 2010-05-21 2015-08-20 半導体装置
JP2017075180A Withdrawn JP2017135404A (ja) 2010-05-21 2017-04-05 半導体装置
JP2018187337A Active JP6595685B2 (ja) 2010-05-21 2018-10-02 トランジスタ
JP2019174910A Withdrawn JP2020014010A (ja) 2010-05-21 2019-09-26 トランジスタ

Country Status (4)

Country Link
US (2) US20110284847A1 (cg-RX-API-DMAC7.html)
JP (5) JP5797932B2 (cg-RX-API-DMAC7.html)
TW (1) TWI524519B (cg-RX-API-DMAC7.html)
WO (1) WO2011145633A1 (cg-RX-API-DMAC7.html)

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JP5836680B2 (ja) 2010-07-27 2015-12-24 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
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