JP5791083B2 - 元素材料の一次的な製造 - Google Patents
元素材料の一次的な製造 Download PDFInfo
- Publication number
- JP5791083B2 JP5791083B2 JP2012508481A JP2012508481A JP5791083B2 JP 5791083 B2 JP5791083 B2 JP 5791083B2 JP 2012508481 A JP2012508481 A JP 2012508481A JP 2012508481 A JP2012508481 A JP 2012508481A JP 5791083 B2 JP5791083 B2 JP 5791083B2
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- electrolyte
- anode
- electrons
- liquid electrolyte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 title claims description 144
- 238000004519 manufacturing process Methods 0.000 title claims description 70
- 239000003792 electrolyte Substances 0.000 claims description 163
- 238000000034 method Methods 0.000 claims description 86
- 229910052710 silicon Inorganic materials 0.000 claims description 71
- 239000010703 silicon Substances 0.000 claims description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 70
- 239000012535 impurity Substances 0.000 claims description 61
- 238000000151 deposition Methods 0.000 claims description 59
- 239000011244 liquid electrolyte Substances 0.000 claims description 51
- 150000001875 compounds Chemical class 0.000 claims description 47
- 239000011343 solid material Substances 0.000 claims description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 44
- 230000008021 deposition Effects 0.000 claims description 41
- 239000000047 product Substances 0.000 claims description 30
- 239000012528 membrane Substances 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims description 19
- 239000000377 silicon dioxide Substances 0.000 claims description 19
- 239000012265 solid product Substances 0.000 claims description 18
- 238000004090 dissolution Methods 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- -1 oxygen anions Chemical class 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- 229910001507 metal halide Inorganic materials 0.000 claims description 7
- 150000005309 metal halides Chemical class 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 229910001512 metal fluoride Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 150000001450 anions Chemical class 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910001618 alkaline earth metal fluoride Inorganic materials 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 claims description 2
- 210000001787 dendrite Anatomy 0.000 claims description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229920000742 Cotton Polymers 0.000 claims 1
- 230000005587 bubbling Effects 0.000 claims 1
- 238000005363 electrowinning Methods 0.000 description 37
- 238000005868 electrolysis reaction Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 20
- 239000002994 raw material Substances 0.000 description 18
- 230000008018 melting Effects 0.000 description 13
- 238000002844 melting Methods 0.000 description 13
- 230000002829 reductive effect Effects 0.000 description 11
- 238000006722 reduction reaction Methods 0.000 description 10
- 238000005204 segregation Methods 0.000 description 9
- 238000000354 decomposition reaction Methods 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000013019 agitation Methods 0.000 description 5
- 238000013459 approach Methods 0.000 description 5
- 238000004070 electrodeposition Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000010348 incorporation Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 4
- 0 CC(CCC*C1)C(C)C(C*2CC2)C1(C1CC1)N=O Chemical compound CC(CCC*C1)C(C)C(C*2CC2)C1(C1CC1)N=O 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 150000003377 silicon compounds Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000374 eutectic mixture Substances 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- FVROQKXVYSIMQV-UHFFFAOYSA-N [Sr+2].[La+3].[O-][Mn]([O-])=O Chemical compound [Sr+2].[La+3].[O-][Mn]([O-])=O FVROQKXVYSIMQV-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- HEZACZKYYKTMBW-UHFFFAOYSA-L calcium magnesium difluoride Chemical compound [F-].[Mg+2].[F-].[Ca+2] HEZACZKYYKTMBW-UHFFFAOYSA-L 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003411 electrode reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910002075 lanthanum strontium manganite Inorganic materials 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910021384 soft carbon Inorganic materials 0.000 description 1
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/33—Silicon
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C3/00—Electrolytic production, recovery or refining of metals by electrolysis of melts
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C3/00—Electrolytic production, recovery or refining of metals by electrolysis of melts
- C25C3/26—Electrolytic production, recovery or refining of metals by electrolysis of melts of titanium, zirconium, hafnium, tantalum or vanadium
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C3/00—Electrolytic production, recovery or refining of metals by electrolysis of melts
- C25C3/34—Electrolytic production, recovery or refining of metals by electrolysis of melts of metals not provided for in groups C25C3/02 - C25C3/32
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electrolytic Production Of Metals (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17439509P | 2009-04-30 | 2009-04-30 | |
| US61/174,395 | 2009-04-30 | ||
| US12/764,637 US8460535B2 (en) | 2009-04-30 | 2010-04-21 | Primary production of elements |
| US12/764,637 | 2010-04-21 | ||
| PCT/US2010/001263 WO2010126597A1 (en) | 2009-04-30 | 2010-04-29 | Primary production of elements |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012525502A JP2012525502A (ja) | 2012-10-22 |
| JP2012525502A5 JP2012525502A5 (OSRAM) | 2015-07-02 |
| JP5791083B2 true JP5791083B2 (ja) | 2015-10-07 |
Family
ID=43029597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012508481A Expired - Fee Related JP5791083B2 (ja) | 2009-04-30 | 2010-04-29 | 元素材料の一次的な製造 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8460535B2 (OSRAM) |
| EP (1) | EP2425042A1 (OSRAM) |
| JP (1) | JP5791083B2 (OSRAM) |
| KR (1) | KR20120024671A (OSRAM) |
| CN (1) | CN102575364B (OSRAM) |
| CA (1) | CA2759805C (OSRAM) |
| TW (1) | TWI479051B (OSRAM) |
| WO (1) | WO2010126597A1 (OSRAM) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8460535B2 (en) | 2009-04-30 | 2013-06-11 | Infinium, Inc. | Primary production of elements |
| WO2012083480A1 (en) * | 2010-12-20 | 2012-06-28 | Epro Development Limited | Method and apparatus for producing pure silicon |
| US9388498B2 (en) | 2011-07-22 | 2016-07-12 | The Regents Of The University Of Michigan | Electrochemical liquid-liquid-solid deposition processes for production of group IV semiconductor materials |
| WO2013028798A1 (en) * | 2011-08-22 | 2013-02-28 | Metal Oxygen Separtation Technologies, Inc. | Liquid anodes and fuels for production of metals from their oxides by molten salt electrolysis with a solid electrolyte |
| KR20140108211A (ko) | 2011-09-01 | 2014-09-05 | 인피니움, 인크. | 산소 및 액체 금속 환경에서 고온에서 고전류 컨덕터 |
| US20130152734A1 (en) | 2011-10-07 | 2013-06-20 | Metal Oxygen Separation Technologies, Inc. | Methods and apparatuses for efficient metals production, separation, and recycling by salt- and argon-mediated distillation with oxide electrolysis, and sensor device related thereto |
| US10147836B2 (en) | 2012-05-31 | 2018-12-04 | Board Of Regents Of The University Of Texas System | Production of thin film solar grade silicon on metals by electrodeposition from silicon dioxide in a molten salt |
| CN102691077A (zh) * | 2012-06-15 | 2012-09-26 | 徐州金石彭源稀土材料厂 | 一种从稀土中提取镨的工艺 |
| WO2014004610A1 (en) * | 2012-06-27 | 2014-01-03 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | System and method for electrorefining of silicon |
| WO2014085467A1 (en) * | 2012-11-28 | 2014-06-05 | Trustees Of Boston University | Method and apparatus for producing solar grade silicon using a som electrolysis process |
| KR101438126B1 (ko) * | 2013-03-12 | 2014-09-04 | 한국원자력연구원 | 리튬 재순환형 금속산화물 전해환원 장치 |
| WO2014165937A1 (en) * | 2013-04-12 | 2014-10-16 | Ventseatech Pty Ltd | Apparatus and method for recovery of metals from a body of fluid by electrodeposition |
| US10087539B2 (en) * | 2013-06-12 | 2018-10-02 | Infinium, Inc. | Liquid metal electrodes for gas separation |
| WO2014201207A2 (en) | 2013-06-14 | 2014-12-18 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | System and method for purification of electrolytic salt |
| WO2015006331A1 (en) * | 2013-07-08 | 2015-01-15 | POWELL, Adam, Clayton, IV | Clean, efficient metal electrolysis via som anodes |
| DE102014111781B4 (de) * | 2013-08-19 | 2022-08-11 | Korea Atomic Energy Research Institute | Verfahren zur elektrochemischen Herstellung einer Silizium-Schicht |
| US20160362805A1 (en) * | 2013-11-01 | 2016-12-15 | Adam Clayton Powell, IV | Methods and apparatuses for increasing energy efficiency and improving membrane robustness in primary metal production |
| GB201411430D0 (en) * | 2014-06-26 | 2014-08-13 | Metalysis Ltd | Method of producing metallic tanralum |
| US10550489B2 (en) | 2016-07-11 | 2020-02-04 | Uchicago Argonne, Llc | Actinide and rare earth drawdown system for molten salt recycle |
| CN106222703A (zh) * | 2016-08-25 | 2016-12-14 | 北京工业大学 | 多步选择性电解回收废硬质合金中金属的方法 |
| KR101734119B1 (ko) * | 2016-09-22 | 2017-05-11 | 한국지질자원연구원 | 금속의 전해환원 조건 설정방법 및 이를 이용한 희토류 금속의 전해환원 방법 |
| US10538860B2 (en) | 2017-01-09 | 2020-01-21 | The Regents Of The University Of Michigan | Devices and methods for electrochemical liquid phase epitaxy |
| KR102055597B1 (ko) * | 2017-12-14 | 2020-01-22 | 한국세라믹기술원 | 고체 산화물 멤브레인용 복합체, 이의 제조방법 및 이를 포함하는 고체 산화물 멤브레인 |
| KR102376951B1 (ko) * | 2020-02-19 | 2022-03-22 | 순천향대학교 산학협력단 | 사용후 핵연료에 포함된 희토류 금속 회수 방법 및 그 장치 |
| AR128753A1 (es) * | 2022-03-10 | 2024-06-12 | Reynolds Consumer Products LLC | Sistemas y métodos para la purificación del aluminio |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL290208A (OSRAM) * | 1962-03-14 | |||
| US3983012A (en) * | 1975-10-08 | 1976-09-28 | The Board Of Trustees Of Leland Stanford Junior University | Epitaxial growth of silicon or germanium by electrodeposition from molten salts |
| US4142947A (en) * | 1977-05-12 | 1979-03-06 | Uri Cohen | Electrodeposition of polycrystalline silicon from a molten fluoride bath and product |
| US4292145A (en) * | 1980-05-14 | 1981-09-29 | The Board Of Trustees Of Leland Stanford Junior University | Electrodeposition of molten silicon |
| FR2560896B1 (fr) * | 1984-03-12 | 1989-10-20 | Pechiney | Procede d'obtention d'un metal par electrolyse d'halogenures en bain de sels fondus comportant un double depot simultane et continu et dispositifs d'application |
| JPH0726220B2 (ja) * | 1986-01-08 | 1995-03-22 | 昭和電工株式会社 | 電解鉄の製法 |
| JPH0726221B2 (ja) * | 1986-01-09 | 1995-03-22 | 昭和電工株式会社 | 電解鉄の製造方法 |
| US4923579A (en) * | 1988-09-12 | 1990-05-08 | Westinghouse Electric Corp. | Electrochemical process for zirconium alloy recycling |
| JPH0696787B2 (ja) * | 1988-09-26 | 1994-11-30 | 昭和電工株式会社 | 高純度金属又は合金の製造方法 |
| JP2783027B2 (ja) * | 1991-12-03 | 1998-08-06 | 住友金属鉱山株式会社 | 金属の電解精製における品質管理方法 |
| JPH06192875A (ja) * | 1992-12-24 | 1994-07-12 | Sumitomo Metal Mining Co Ltd | ガリウム電解液の精製方法 |
| JPH07300692A (ja) * | 1994-04-27 | 1995-11-14 | Konica Corp | 電解金属回収装置 |
| FR2731717B1 (fr) * | 1995-03-15 | 1997-04-25 | Commissariat Energie Atomique | Procede d'oxydation electrochimique de am (vii) en am (vi), utilisable pour separer l'americium des solutions de retraitement de combustibles nucleaires uses |
| US5976345A (en) * | 1997-01-06 | 1999-11-02 | Boston University | Method and apparatus for metal extraction and sensor device related thereto |
| JP2980869B2 (ja) * | 1997-08-12 | 1999-11-22 | 科学技術振興事業団 | 単結晶質銀薄膜又は単結晶銀の作製方法 |
| JP2997265B1 (ja) * | 1999-01-29 | 2000-01-11 | 金属鉱業事業団 | 電解還元装置 |
| JP2001040493A (ja) * | 1999-07-30 | 2001-02-13 | Toho Titanium Co Ltd | チタンの製造方法及びその製造装置 |
| US6896788B2 (en) * | 2000-05-22 | 2005-05-24 | Nikko Materials Company, Limited | Method of producing a higher-purity metal |
| JP3878402B2 (ja) * | 2000-05-22 | 2007-02-07 | 日鉱金属株式会社 | 金属の高純度化方法 |
| JP2002098793A (ja) * | 2000-09-22 | 2002-04-05 | Ngk Insulators Ltd | β−アルミナを用いたNa・Na化合物の電解方法 |
| NO20010963D0 (no) | 2001-02-26 | 2001-02-26 | Norwegian Silicon Refinery As | FremgangsmÕte for fremstilling av silisium og/eller aluminium og silumin (aluminium-silisium-legering) |
| JP3825983B2 (ja) * | 2001-03-26 | 2006-09-27 | 日鉱金属株式会社 | 金属の高純度化方法 |
| CN1715454A (zh) | 2001-08-01 | 2006-01-04 | 株式会社日矿材料 | 高纯镍、由其构成的溅射靶及通过该靶形成的高纯镍薄膜 |
| JP2004083992A (ja) * | 2002-08-27 | 2004-03-18 | Nikko Materials Co Ltd | 高純度アンチモンの製造方法及び高純度アンチモン |
| AU2003902048A0 (en) * | 2003-04-29 | 2003-05-15 | M.I.M. Holdings Limited | Method & apparatus for cathode plate production |
| US7846309B2 (en) * | 2003-08-14 | 2010-12-07 | Rio Tinto Alcan International Limited | Metal electrowinning cell with electrolyte purifier |
| JP4555984B2 (ja) * | 2004-04-28 | 2010-10-06 | Dowaエコシステム株式会社 | 金属回収装置及び金属回収方法 |
| GB0422129D0 (en) | 2004-10-06 | 2004-11-03 | Qinetiq Ltd | Electro-reduction process |
| JP4600924B2 (ja) * | 2005-02-10 | 2010-12-22 | 滋賀県 | 水素回収型電解式水質改善装置 |
| JP2007016293A (ja) * | 2005-07-08 | 2007-01-25 | Kyoto Univ | 懸濁電解による金属の製造方法 |
| US8658007B2 (en) * | 2005-07-15 | 2014-02-25 | The Trustees Of Boston University | Oxygen-producing inert anodes for SOM process |
| AU2007226754B2 (en) * | 2006-03-10 | 2011-01-20 | Elkem As | Method for electrolytic production and refining of metals |
| US7901561B2 (en) * | 2006-03-10 | 2011-03-08 | Elkem As | Method for electrolytic production and refining of metals |
| JP2008266766A (ja) * | 2006-12-26 | 2008-11-06 | Nikko Kinzoku Kk | ハロゲン系溶液からの板状電気銅の製造方法 |
| CN101070598B (zh) * | 2007-03-26 | 2010-07-14 | 中南大学 | 一种熔盐电解法制备太阳级硅材料的方法 |
| US7744734B2 (en) * | 2007-08-24 | 2010-06-29 | Battelle Energy Alliance, Llc | High current density cathode for electrorefining in molten electrolyte |
| US8460535B2 (en) | 2009-04-30 | 2013-06-11 | Infinium, Inc. | Primary production of elements |
-
2010
- 2010-04-21 US US12/764,637 patent/US8460535B2/en not_active Expired - Fee Related
- 2010-04-28 TW TW099113403A patent/TWI479051B/zh not_active IP Right Cessation
- 2010-04-29 CA CA2759805A patent/CA2759805C/en active Active
- 2010-04-29 CN CN201080030066.5A patent/CN102575364B/zh not_active Expired - Fee Related
- 2010-04-29 EP EP10718749A patent/EP2425042A1/en not_active Withdrawn
- 2010-04-29 KR KR1020117028462A patent/KR20120024671A/ko not_active Ceased
- 2010-04-29 WO PCT/US2010/001263 patent/WO2010126597A1/en not_active Ceased
- 2010-04-29 JP JP2012508481A patent/JP5791083B2/ja not_active Expired - Fee Related
-
2013
- 2013-06-10 US US13/913,745 patent/US8795506B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN102575364A (zh) | 2012-07-11 |
| US8460535B2 (en) | 2013-06-11 |
| KR20120024671A (ko) | 2012-03-14 |
| US20100276297A1 (en) | 2010-11-04 |
| CN102575364B (zh) | 2014-11-12 |
| TW201042089A (en) | 2010-12-01 |
| TWI479051B (zh) | 2015-04-01 |
| US20130264212A1 (en) | 2013-10-10 |
| EP2425042A1 (en) | 2012-03-07 |
| US8795506B2 (en) | 2014-08-05 |
| JP2012525502A (ja) | 2012-10-22 |
| HK1173197A1 (en) | 2013-05-10 |
| CA2759805C (en) | 2014-01-21 |
| WO2010126597A1 (en) | 2010-11-04 |
| CA2759805A1 (en) | 2010-11-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5791083B2 (ja) | 元素材料の一次的な製造 | |
| CN1896326B (zh) | 从物质x和金属或者半金属m1的固体化合物m1x中去除该物质的方法 | |
| US5024737A (en) | Process for producing a reactive metal-magnesium alloy | |
| Mohandas et al. | FFC Cambridge process and removal of oxygen from metal-oxygen systems by molten salt electrolysis: an overview | |
| JP2641533B2 (ja) | ウランおよびプルトニウムを含む使用済核燃料を精製する方法 | |
| KR101770838B1 (ko) | 고체 공급재료의 환원 장치 및 방법 | |
| JP2001509842A (ja) | 金属を電解製造するための方法 | |
| CN101166838A (zh) | 金属氧化物的电化学还原 | |
| Kipouros et al. | Electrorefining of zirconium metal in alkali chloride and alkali fluoride fused electrolytes | |
| Cvetković et al. | Study of Nd deposition onto W and Mo cathodes from molten oxide-fluoride electrolyte | |
| JP2015193899A (ja) | 電析用電解質および金属膜の製造方法 | |
| KR101298072B1 (ko) | 제염을 위한 불순물 제어 특화 전해정련장치 및 이를 이용한 원자로용 폐기물 제염방법 | |
| Souček et al. | Exhaustive electrolysis for recovery of actinides from molten LiCl–KCl using solid aluminium cathodes | |
| Cai et al. | Investigation on the reaction progress of zirconium and cuprous chloride in the LiCl–KCl melt | |
| US20140144784A1 (en) | Method for recovering elemental silicon from silicon sludge by electrolysis in non-aqueous electrolyte | |
| JP2020033621A (ja) | 金属チタンの製造方法 | |
| JPWO2008102520A1 (ja) | 溶融塩電解による金属の製造装置およびこれを用いた金属の製造方法 | |
| JP2596976B2 (ja) | ネオジム又はネオジム合金の製造方法 | |
| Mohandas et al. | Molten salt based direct solid state electrochemical de-oxidation of metal oxides to metal: our experience at IGCAR | |
| Niedrach et al. | Uranium purification by electrorefining | |
| HK1173197B (en) | Primary production of elements | |
| US2923670A (en) | Method and means for electrolytic purification of plutonium | |
| Parasotchenko et al. | Electrodeposition of Silicon in the Low-Temperature LiCl-KCl-CsCl-K2SiF6 Melt Under Direct and Pulse Current | |
| JP7100781B1 (ja) | チタン箔の製造方法 | |
| Pavlovskii | Electrolytes for tungsten refining |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130426 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130426 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140213 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140507 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140807 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150224 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150501 |
|
| A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20150501 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150630 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150729 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5791083 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |