JP2012525502A5 - - Google Patents
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- Publication number
- JP2012525502A5 JP2012525502A5 JP2012508481A JP2012508481A JP2012525502A5 JP 2012525502 A5 JP2012525502 A5 JP 2012525502A5 JP 2012508481 A JP2012508481 A JP 2012508481A JP 2012508481 A JP2012508481 A JP 2012508481A JP 2012525502 A5 JP2012525502 A5 JP 2012525502A5
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- anode
- electrolyte
- electrons
- liquid electrolyte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003792 electrolyte Substances 0.000 claims description 39
- 239000011244 liquid electrolyte Substances 0.000 claims description 24
- 239000011343 solid material Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000005363 electrowinning Methods 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- -1 oxygen anions Chemical class 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 49
- 239000012265 solid product Substances 0.000 claims 16
- 238000004090 dissolution Methods 0.000 claims 5
- 239000011261 inert gas Substances 0.000 claims 3
- 229910001512 metal fluoride Inorganic materials 0.000 claims 3
- 238000007747 plating Methods 0.000 claims 3
- 238000003756 stirring Methods 0.000 claims 3
- 150000001450 anions Chemical class 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- 229910052777 Praseodymium Inorganic materials 0.000 claims 1
- 229910001618 alkaline earth metal fluoride Inorganic materials 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 150000001639 boron compounds Chemical class 0.000 claims 1
- 230000005587 bubbling Effects 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 210000001787 dendrite Anatomy 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
- 229910001507 metal halide Inorganic materials 0.000 claims 1
- 150000005309 metal halides Chemical class 0.000 claims 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims 1
- 239000000047 product Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17439509P | 2009-04-30 | 2009-04-30 | |
| US61/174,395 | 2009-04-30 | ||
| US12/764,637 US8460535B2 (en) | 2009-04-30 | 2010-04-21 | Primary production of elements |
| US12/764,637 | 2010-04-21 | ||
| PCT/US2010/001263 WO2010126597A1 (en) | 2009-04-30 | 2010-04-29 | Primary production of elements |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012525502A JP2012525502A (ja) | 2012-10-22 |
| JP2012525502A5 true JP2012525502A5 (OSRAM) | 2015-07-02 |
| JP5791083B2 JP5791083B2 (ja) | 2015-10-07 |
Family
ID=43029597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012508481A Expired - Fee Related JP5791083B2 (ja) | 2009-04-30 | 2010-04-29 | 元素材料の一次的な製造 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8460535B2 (OSRAM) |
| EP (1) | EP2425042A1 (OSRAM) |
| JP (1) | JP5791083B2 (OSRAM) |
| KR (1) | KR20120024671A (OSRAM) |
| CN (1) | CN102575364B (OSRAM) |
| CA (1) | CA2759805C (OSRAM) |
| TW (1) | TWI479051B (OSRAM) |
| WO (1) | WO2010126597A1 (OSRAM) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8460535B2 (en) | 2009-04-30 | 2013-06-11 | Infinium, Inc. | Primary production of elements |
| WO2012083480A1 (en) * | 2010-12-20 | 2012-06-28 | Epro Development Limited | Method and apparatus for producing pure silicon |
| US9388498B2 (en) | 2011-07-22 | 2016-07-12 | The Regents Of The University Of Michigan | Electrochemical liquid-liquid-solid deposition processes for production of group IV semiconductor materials |
| WO2013028798A1 (en) * | 2011-08-22 | 2013-02-28 | Metal Oxygen Separtation Technologies, Inc. | Liquid anodes and fuels for production of metals from their oxides by molten salt electrolysis with a solid electrolyte |
| KR20140108211A (ko) | 2011-09-01 | 2014-09-05 | 인피니움, 인크. | 산소 및 액체 금속 환경에서 고온에서 고전류 컨덕터 |
| US20130152734A1 (en) | 2011-10-07 | 2013-06-20 | Metal Oxygen Separation Technologies, Inc. | Methods and apparatuses for efficient metals production, separation, and recycling by salt- and argon-mediated distillation with oxide electrolysis, and sensor device related thereto |
| US10147836B2 (en) | 2012-05-31 | 2018-12-04 | Board Of Regents Of The University Of Texas System | Production of thin film solar grade silicon on metals by electrodeposition from silicon dioxide in a molten salt |
| CN102691077A (zh) * | 2012-06-15 | 2012-09-26 | 徐州金石彭源稀土材料厂 | 一种从稀土中提取镨的工艺 |
| WO2014004610A1 (en) * | 2012-06-27 | 2014-01-03 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | System and method for electrorefining of silicon |
| WO2014085467A1 (en) * | 2012-11-28 | 2014-06-05 | Trustees Of Boston University | Method and apparatus for producing solar grade silicon using a som electrolysis process |
| KR101438126B1 (ko) * | 2013-03-12 | 2014-09-04 | 한국원자력연구원 | 리튬 재순환형 금속산화물 전해환원 장치 |
| WO2014165937A1 (en) * | 2013-04-12 | 2014-10-16 | Ventseatech Pty Ltd | Apparatus and method for recovery of metals from a body of fluid by electrodeposition |
| US10087539B2 (en) * | 2013-06-12 | 2018-10-02 | Infinium, Inc. | Liquid metal electrodes for gas separation |
| WO2014201207A2 (en) | 2013-06-14 | 2014-12-18 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | System and method for purification of electrolytic salt |
| WO2015006331A1 (en) * | 2013-07-08 | 2015-01-15 | POWELL, Adam, Clayton, IV | Clean, efficient metal electrolysis via som anodes |
| DE102014111781B4 (de) * | 2013-08-19 | 2022-08-11 | Korea Atomic Energy Research Institute | Verfahren zur elektrochemischen Herstellung einer Silizium-Schicht |
| US20160362805A1 (en) * | 2013-11-01 | 2016-12-15 | Adam Clayton Powell, IV | Methods and apparatuses for increasing energy efficiency and improving membrane robustness in primary metal production |
| GB201411430D0 (en) * | 2014-06-26 | 2014-08-13 | Metalysis Ltd | Method of producing metallic tanralum |
| US10550489B2 (en) | 2016-07-11 | 2020-02-04 | Uchicago Argonne, Llc | Actinide and rare earth drawdown system for molten salt recycle |
| CN106222703A (zh) * | 2016-08-25 | 2016-12-14 | 北京工业大学 | 多步选择性电解回收废硬质合金中金属的方法 |
| KR101734119B1 (ko) * | 2016-09-22 | 2017-05-11 | 한국지질자원연구원 | 금속의 전해환원 조건 설정방법 및 이를 이용한 희토류 금속의 전해환원 방법 |
| US10538860B2 (en) | 2017-01-09 | 2020-01-21 | The Regents Of The University Of Michigan | Devices and methods for electrochemical liquid phase epitaxy |
| KR102055597B1 (ko) * | 2017-12-14 | 2020-01-22 | 한국세라믹기술원 | 고체 산화물 멤브레인용 복합체, 이의 제조방법 및 이를 포함하는 고체 산화물 멤브레인 |
| KR102376951B1 (ko) * | 2020-02-19 | 2022-03-22 | 순천향대학교 산학협력단 | 사용후 핵연료에 포함된 희토류 금속 회수 방법 및 그 장치 |
| AR128753A1 (es) * | 2022-03-10 | 2024-06-12 | Reynolds Consumer Products LLC | Sistemas y métodos para la purificación del aluminio |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL290208A (OSRAM) * | 1962-03-14 | |||
| US3983012A (en) * | 1975-10-08 | 1976-09-28 | The Board Of Trustees Of Leland Stanford Junior University | Epitaxial growth of silicon or germanium by electrodeposition from molten salts |
| US4142947A (en) * | 1977-05-12 | 1979-03-06 | Uri Cohen | Electrodeposition of polycrystalline silicon from a molten fluoride bath and product |
| US4292145A (en) * | 1980-05-14 | 1981-09-29 | The Board Of Trustees Of Leland Stanford Junior University | Electrodeposition of molten silicon |
| FR2560896B1 (fr) * | 1984-03-12 | 1989-10-20 | Pechiney | Procede d'obtention d'un metal par electrolyse d'halogenures en bain de sels fondus comportant un double depot simultane et continu et dispositifs d'application |
| JPH0726220B2 (ja) * | 1986-01-08 | 1995-03-22 | 昭和電工株式会社 | 電解鉄の製法 |
| JPH0726221B2 (ja) * | 1986-01-09 | 1995-03-22 | 昭和電工株式会社 | 電解鉄の製造方法 |
| US4923579A (en) * | 1988-09-12 | 1990-05-08 | Westinghouse Electric Corp. | Electrochemical process for zirconium alloy recycling |
| JPH0696787B2 (ja) * | 1988-09-26 | 1994-11-30 | 昭和電工株式会社 | 高純度金属又は合金の製造方法 |
| JP2783027B2 (ja) * | 1991-12-03 | 1998-08-06 | 住友金属鉱山株式会社 | 金属の電解精製における品質管理方法 |
| JPH06192875A (ja) * | 1992-12-24 | 1994-07-12 | Sumitomo Metal Mining Co Ltd | ガリウム電解液の精製方法 |
| JPH07300692A (ja) * | 1994-04-27 | 1995-11-14 | Konica Corp | 電解金属回収装置 |
| FR2731717B1 (fr) * | 1995-03-15 | 1997-04-25 | Commissariat Energie Atomique | Procede d'oxydation electrochimique de am (vii) en am (vi), utilisable pour separer l'americium des solutions de retraitement de combustibles nucleaires uses |
| US5976345A (en) * | 1997-01-06 | 1999-11-02 | Boston University | Method and apparatus for metal extraction and sensor device related thereto |
| JP2980869B2 (ja) * | 1997-08-12 | 1999-11-22 | 科学技術振興事業団 | 単結晶質銀薄膜又は単結晶銀の作製方法 |
| JP2997265B1 (ja) * | 1999-01-29 | 2000-01-11 | 金属鉱業事業団 | 電解還元装置 |
| JP2001040493A (ja) * | 1999-07-30 | 2001-02-13 | Toho Titanium Co Ltd | チタンの製造方法及びその製造装置 |
| US6896788B2 (en) * | 2000-05-22 | 2005-05-24 | Nikko Materials Company, Limited | Method of producing a higher-purity metal |
| JP3878402B2 (ja) * | 2000-05-22 | 2007-02-07 | 日鉱金属株式会社 | 金属の高純度化方法 |
| JP2002098793A (ja) * | 2000-09-22 | 2002-04-05 | Ngk Insulators Ltd | β−アルミナを用いたＮａ・Ｎａ化合物の電解方法 |
| NO20010963D0 (no) | 2001-02-26 | 2001-02-26 | Norwegian Silicon Refinery As | FremgangsmÕte for fremstilling av silisium og/eller aluminium og silumin (aluminium-silisium-legering) |
| JP3825983B2 (ja) * | 2001-03-26 | 2006-09-27 | 日鉱金属株式会社 | 金属の高純度化方法 |
| CN1715454A (zh) | 2001-08-01 | 2006-01-04 | 株式会社日矿材料 | 高纯镍、由其构成的溅射靶及通过该靶形成的高纯镍薄膜 |
| JP2004083992A (ja) * | 2002-08-27 | 2004-03-18 | Nikko Materials Co Ltd | 高純度アンチモンの製造方法及び高純度アンチモン |
| AU2003902048A0 (en) * | 2003-04-29 | 2003-05-15 | M.I.M. Holdings Limited | Method & apparatus for cathode plate production |
| US7846309B2 (en) * | 2003-08-14 | 2010-12-07 | Rio Tinto Alcan International Limited | Metal electrowinning cell with electrolyte purifier |
| JP4555984B2 (ja) * | 2004-04-28 | 2010-10-06 | Ｄｏｗａエコシステム株式会社 | 金属回収装置及び金属回収方法 |
| GB0422129D0 (en) | 2004-10-06 | 2004-11-03 | Qinetiq Ltd | Electro-reduction process |
| JP4600924B2 (ja) * | 2005-02-10 | 2010-12-22 | 滋賀県 | 水素回収型電解式水質改善装置 |
| JP2007016293A (ja) * | 2005-07-08 | 2007-01-25 | Kyoto Univ | 懸濁電解による金属の製造方法 |
| US8658007B2 (en) * | 2005-07-15 | 2014-02-25 | The Trustees Of Boston University | Oxygen-producing inert anodes for SOM process |
| AU2007226754B2 (en) * | 2006-03-10 | 2011-01-20 | Elkem As | Method for electrolytic production and refining of metals |
| US7901561B2 (en) * | 2006-03-10 | 2011-03-08 | Elkem As | Method for electrolytic production and refining of metals |
| JP2008266766A (ja) * | 2006-12-26 | 2008-11-06 | Nikko Kinzoku Kk | ハロゲン系溶液からの板状電気銅の製造方法 |
| CN101070598B (zh) * | 2007-03-26 | 2010-07-14 | 中南大学 | 一种熔盐电解法制备太阳级硅材料的方法 |
| US7744734B2 (en) * | 2007-08-24 | 2010-06-29 | Battelle Energy Alliance, Llc | High current density cathode for electrorefining in molten electrolyte |
| US8460535B2 (en) | 2009-04-30 | 2013-06-11 | Infinium, Inc. | Primary production of elements |
-
2010
- 2010-04-21 US US12/764,637 patent/US8460535B2/en not_active Expired - Fee Related
- 2010-04-28 TW TW099113403A patent/TWI479051B/zh not_active IP Right Cessation
- 2010-04-29 CA CA2759805A patent/CA2759805C/en active Active
- 2010-04-29 CN CN201080030066.5A patent/CN102575364B/zh not_active Expired - Fee Related
- 2010-04-29 EP EP10718749A patent/EP2425042A1/en not_active Withdrawn
- 2010-04-29 KR KR1020117028462A patent/KR20120024671A/ko not_active Ceased
- 2010-04-29 WO PCT/US2010/001263 patent/WO2010126597A1/en not_active Ceased
- 2010-04-29 JP JP2012508481A patent/JP5791083B2/ja not_active Expired - Fee Related
-
2013
- 2013-06-10 US US13/913,745 patent/US8795506B2/en active Active
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