JP5788807B2 - ナノ構造化表面を製造する方法 - Google Patents

ナノ構造化表面を製造する方法 Download PDF

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Publication number
JP5788807B2
JP5788807B2 JP2011544577A JP2011544577A JP5788807B2 JP 5788807 B2 JP5788807 B2 JP 5788807B2 JP 2011544577 A JP2011544577 A JP 2011544577A JP 2011544577 A JP2011544577 A JP 2011544577A JP 5788807 B2 JP5788807 B2 JP 5788807B2
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substrate
electrode
plasma
acrylate
etching
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JP2012514242A5 (https=
JP2012514242A (ja
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エム．デイビッド モーゼス
エム．デイビッド モーゼス
ユ タ−フア
ユ タ−フア
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3M Innovative Properties Co
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2011544577A 2008-12-30 2009-12-29 ナノ構造化表面を製造する方法 Active JP5788807B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14153108P 2008-12-30 2008-12-30
US61/141,531 2008-12-30
PCT/US2009/069662 WO2010078306A2 (en) 2008-12-30 2009-12-29 Method for making nanostructured surfaces

Publications (3)

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JP2012514242A JP2012514242A (ja) 2012-06-21
JP2012514242A5 JP2012514242A5 (https=) 2013-01-24
JP5788807B2 true JP5788807B2 (ja) 2015-10-07

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JP2011544577A Active JP5788807B2 (ja) 2008-12-30 2009-12-29 ナノ構造化表面を製造する方法

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US (1) US8460568B2 (https=)
EP (2) EP2379442A4 (https=)
JP (1) JP5788807B2 (https=)
KR (1) KR101615787B1 (https=)
CN (1) CN102325718B (https=)
SG (1) SG172428A1 (https=)
WO (1) WO2010078306A2 (https=)

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Publication number Publication date
JP2012514242A (ja) 2012-06-21
KR20110103448A (ko) 2011-09-20
US8460568B2 (en) 2013-06-11
WO2010078306A3 (en) 2010-09-23
EP2379442A2 (en) 2011-10-26
EP2379442A4 (en) 2014-02-26
KR101615787B1 (ko) 2016-04-26
CN102325718A (zh) 2012-01-18
US20120012557A1 (en) 2012-01-19
EP3115334A1 (en) 2017-01-11
SG172428A1 (en) 2011-07-28
CN102325718B (zh) 2013-12-18
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