JP5782587B2 - 発光ダイヤモンドナノ粒子を製造する方法 - Google Patents
発光ダイヤモンドナノ粒子を製造する方法 Download PDFInfo
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- JP5782587B2 JP5782587B2 JP2010506933A JP2010506933A JP5782587B2 JP 5782587 B2 JP5782587 B2 JP 5782587B2 JP 2010506933 A JP2010506933 A JP 2010506933A JP 2010506933 A JP2010506933 A JP 2010506933A JP 5782587 B2 JP5782587 B2 JP 5782587B2
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
- C01B32/28—After-treatment, e.g. purification, irradiation, separation or recovery
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/65—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing carbon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/775—Nanosized powder or flake, e.g. nanosized catalyst
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
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- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
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- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Luminescent Compositions (AREA)
Description
−格子サイトに原子が存在しないことに起因する欠陥である空孔(V)。
−構造中に、通常原子が位置する格子サイト間のある位置に、余分な原子が導入されている場合の格子間原子、たとえば格子間窒素原子(NI)。
−特定のタイプの原子が異なるタイプの原子で置き換わっていることを伴う置換原子、たとえば炭素原子に置き換わっている孤立した/単一の置換窒素原子(NS)。
高温高圧プロセスによって成長させた、サイズが150μmを超えており、且つ、孤立した置換窒素を含む(窒素で置換され、窒素が孤立して存在している)ダイヤモンドから、窒素空孔中心を含むダイヤモンドを製造する方法であって、
−照射線量が1cm2当たり1017個から1019個の電子になるように、前記ダイヤモンドに電子ビームを照射するステップと、
−電子ビームを照射したダイヤモンドを、真空中または不活性雰囲気中で、700℃を超える温度で少なくとも1時間アニールするステップとを含み、
前記電子ビームが、7MeVを超える加速エネルギーを有することを特徴とする方法である。
Claims (9)
- 高濃度の窒素−空孔中心を含む蛍光性ダイヤモンドナノ粒子を製造する方法であって、
−高温高圧プロセスによって成長させた、サイズが0.1μmを超えており、且つ、孤立した置換窒素を含むダイヤモンドを準備するステップと、
−照射線量が1cm2当たり1017個から1019個の電子になるように、前記ダイヤモンドに7MeVを超え、15MeV未満である加速エネルギーを有する電子ビームを照射することにより、ダイヤモンド中に空孔を生成させるステップ(12)と、
−電子ビームを照射したダイヤモンドを、不活性雰囲気中で、800℃から850℃までの間の温度で少なくとも1時間で2時間未満の間アニールすることにより、電子ビームの照射により生成した空孔と窒素原子を結合するステップ(14)とを含み、
アニール処理後、ダイヤモンドを以下の2段階工程でダイヤモンドナノ粒子に粉砕する:
1)第1工程:N2対向ジェットミルによって200〜300nmの粒子に粉砕し、
2)第2工程:第1工程後に、遊星ミル、または、純水を用いる媒体撹拌型ミルによって50nm未満のダイヤモンドナノ粒子に粉砕することを特徴とする方法。 - 前記電子ビームの加速エネルギーが8MeVから10MeVまでの間である、請求項1に記載の方法。
- 照射中、ダイヤモンドの温度は80℃以下の温度に維持される、請求項1または2に記載の方法。
- 前記ダイヤモンドは、前記ダイヤモンドの間を循環する液体流によって冷却される、請求項3に記載の方法。
- 前記液体は主に水からなる、請求項4に記載の方法。
- 前記照射において、前記ダイヤモンドのサイズは150μmを超える、請求項1〜5のいずれか1項に記載の方法。
- 請求項1〜6のいずれか1項に記載の方法で蛍光性ダイヤモンドナノ粒子を製造する方法であって、
該蛍光性ダイヤモンドナノ粒子は、20nmのナノ粒子中に4〜16個の窒素−空孔中心、または10nmのナノ粒子中に10個の窒素−空孔中心、または15nmのナノ粒子中に8個の窒素−空孔中心を含むことを特徴とする方法。 - 蛍光性ダイヤモンドナノ粒子の、量子暗号システムの発光体としての使用方法であって、
請求項1〜7のいずれか1項に記載の方法で該蛍光性ダイヤモンドナノ粒子を製造する工程と、
少なくとも1個の該蛍光性ダイヤモンドナノ粒子を、該量子暗号システムの発光体として使用する工程と
を含むことを特徴とする方法。 - 単一粒子バイオマーカーにおける、蛍光性ダイヤモンドナノ粒子の使用方法であって、
請求項1〜7のいずれか1項に記載の方法で該蛍光性ダイヤモンドナノ粒子を製造する工程と、
少なくとも1個の該蛍光性ダイヤモンドナノ粒子を、該単一粒子バイオマーカーにおいて使用する工程と
を含むことを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07290593A EP1990313A1 (en) | 2007-05-10 | 2007-05-10 | Method to produce light-emitting nano-particles of diamond |
EP07290593.8 | 2007-05-10 | ||
PCT/EP2008/055647 WO2008138841A1 (en) | 2007-05-10 | 2008-05-07 | Method to produce light-emitting nano-particles of diamond |
Publications (2)
Publication Number | Publication Date |
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JP2010526746A JP2010526746A (ja) | 2010-08-05 |
JP5782587B2 true JP5782587B2 (ja) | 2015-09-24 |
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JP2010506933A Expired - Fee Related JP5782587B2 (ja) | 2007-05-10 | 2008-05-07 | 発光ダイヤモンドナノ粒子を製造する方法 |
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US (2) | US8574536B2 (ja) |
EP (2) | EP1990313A1 (ja) |
JP (1) | JP5782587B2 (ja) |
KR (1) | KR101494251B1 (ja) |
CN (1) | CN101679040A (ja) |
RU (1) | RU2466088C2 (ja) |
WO (1) | WO2008138841A1 (ja) |
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-
2007
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- 2008-05-07 CN CN200880015526A patent/CN101679040A/zh active Pending
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Also Published As
Publication number | Publication date |
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RU2009145703A (ru) | 2011-06-20 |
JP2010526746A (ja) | 2010-08-05 |
KR101494251B1 (ko) | 2015-02-23 |
CN101679040A (zh) | 2010-03-24 |
KR20100017762A (ko) | 2010-02-16 |
US20140065424A1 (en) | 2014-03-06 |
EP1990313A1 (en) | 2008-11-12 |
RU2466088C2 (ru) | 2012-11-10 |
US8574536B2 (en) | 2013-11-05 |
EP2142474A1 (en) | 2010-01-13 |
EP2142474B1 (en) | 2018-07-11 |
US8932554B2 (en) | 2015-01-13 |
US20100135890A1 (en) | 2010-06-03 |
WO2008138841A1 (en) | 2008-11-20 |
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