HUP1900269A1 - Eljárás ponthibákat (vakancia) tartalmazó anyagrészecskék elõállítására - Google Patents

Eljárás ponthibákat (vakancia) tartalmazó anyagrészecskék elõállítására

Info

Publication number
HUP1900269A1
HUP1900269A1 HU1900269A HUP1900269A HUP1900269A1 HU P1900269 A1 HUP1900269 A1 HU P1900269A1 HU 1900269 A HU1900269 A HU 1900269A HU P1900269 A HUP1900269 A HU P1900269A HU P1900269 A1 HUP1900269 A1 HU P1900269A1
Authority
HU
Hungary
Prior art keywords
vacancy
production
material particles
particles containing
point defects
Prior art date
Application number
HU1900269A
Other languages
English (en)
Inventor
David Beke
Gali Adam Dr
Original Assignee
Mta Wigner Fizikai Kutatokoezpont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mta Wigner Fizikai Kutatokoezpont filed Critical Mta Wigner Fizikai Kutatokoezpont
Priority to HU1900269A priority Critical patent/HUP1900269A1/hu
Priority to EP20187425.2A priority patent/EP3770114A1/en
Publication of HUP1900269A1 publication Critical patent/HUP1900269A1/hu

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
    • B01J27/20—Carbon compounds
    • B01J27/22—Carbides
    • B01J27/224—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/984—Preparation from elemental silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Mathematical Optimization (AREA)
  • Artificial Intelligence (AREA)
  • Computational Mathematics (AREA)
  • Data Mining & Analysis (AREA)
  • Composite Materials (AREA)
  • Mathematical Analysis (AREA)
  • Thermal Sciences (AREA)
  • Pure & Applied Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Luminescent Compositions (AREA)
HU1900269A 2019-07-26 2019-07-26 Eljárás ponthibákat (vakancia) tartalmazó anyagrészecskék elõállítására HUP1900269A1 (hu)

Priority Applications (2)

Application Number Priority Date Filing Date Title
HU1900269A HUP1900269A1 (hu) 2019-07-26 2019-07-26 Eljárás ponthibákat (vakancia) tartalmazó anyagrészecskék elõállítására
EP20187425.2A EP3770114A1 (en) 2019-07-26 2020-07-23 Method for preparation of point defects (vacancy) in silicon carbide particles

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
HU1900269A HUP1900269A1 (hu) 2019-07-26 2019-07-26 Eljárás ponthibákat (vakancia) tartalmazó anyagrészecskék elõállítására

Publications (1)

Publication Number Publication Date
HUP1900269A1 true HUP1900269A1 (hu) 2021-01-28

Family

ID=89992953

Family Applications (1)

Application Number Title Priority Date Filing Date
HU1900269A HUP1900269A1 (hu) 2019-07-26 2019-07-26 Eljárás ponthibákat (vakancia) tartalmazó anyagrészecskék elõállítására

Country Status (2)

Country Link
EP (1) EP3770114A1 (hu)
HU (1) HUP1900269A1 (hu)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202200498A (zh) * 2020-06-18 2022-01-01 盛新材料科技股份有限公司 半絕緣單晶碳化矽塊材以及粉末
CN112928187A (zh) * 2021-01-29 2021-06-08 中国科学院长春光学精密机械与物理研究所 一种二维第三主族金属氮化物实现单光子发射的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1990313A1 (en) 2007-05-10 2008-11-12 INSERM (Institut National de la Santé et de la Recherche Médicale) Method to produce light-emitting nano-particles of diamond
GB201505139D0 (en) 2015-03-26 2015-05-06 Element Six Abrasives Sa Highly fluorescent diamond particles and methods of fabricating the same
CN105293499B (zh) * 2015-11-30 2017-10-24 西安电子科技大学 一种b、n共掺杂碳化硅纳米吸波材料的制备方法

Also Published As

Publication number Publication date
EP3770114A1 (en) 2021-01-27

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Legal Events

Date Code Title Description
FA9A Lapse of provisional patent protection due to relinquishment or protection considered relinquished