JP5781844B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5781844B2
JP5781844B2 JP2011144280A JP2011144280A JP5781844B2 JP 5781844 B2 JP5781844 B2 JP 5781844B2 JP 2011144280 A JP2011144280 A JP 2011144280A JP 2011144280 A JP2011144280 A JP 2011144280A JP 5781844 B2 JP5781844 B2 JP 5781844B2
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oxide semiconductor
semiconductor layer
layer
transistor
electrode
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JP2011144280A
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Japanese (ja)
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JP2012033911A (ja
JP2012033911A5 (enExample
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耕生 野田
耕生 野田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2011144280A 2010-07-02 2011-06-29 半導体装置の作製方法 Expired - Fee Related JP5781844B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011144280A JP5781844B2 (ja) 2010-07-02 2011-06-29 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010151641 2010-07-02
JP2010151641 2010-07-02
JP2011144280A JP5781844B2 (ja) 2010-07-02 2011-06-29 半導体装置の作製方法

Related Child Applications (1)

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JP2015142014A Division JP2015233148A (ja) 2010-07-02 2015-07-16 半導体装置

Publications (3)

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JP2012033911A JP2012033911A (ja) 2012-02-16
JP2012033911A5 JP2012033911A5 (enExample) 2014-07-17
JP5781844B2 true JP5781844B2 (ja) 2015-09-24

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JP2011144280A Expired - Fee Related JP5781844B2 (ja) 2010-07-02 2011-06-29 半導体装置の作製方法
JP2015142014A Withdrawn JP2015233148A (ja) 2010-07-02 2015-07-16 半導体装置
JP2016234127A Expired - Fee Related JP6328735B2 (ja) 2010-07-02 2016-12-01 半導体装置

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JP2016234127A Expired - Fee Related JP6328735B2 (ja) 2010-07-02 2016-12-01 半導体装置

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Country Link
US (1) US8642380B2 (enExample)
JP (3) JP5781844B2 (enExample)
KR (1) KR101927338B1 (enExample)
TW (1) TWI509706B (enExample)

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