WO2009031423A1 - 金属酸化物半導体薄膜の製造方法、これを用いた薄膜トランジスタ - Google Patents

金属酸化物半導体薄膜の製造方法、これを用いた薄膜トランジスタ Download PDF

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Publication number
WO2009031423A1
WO2009031423A1 PCT/JP2008/065097 JP2008065097W WO2009031423A1 WO 2009031423 A1 WO2009031423 A1 WO 2009031423A1 JP 2008065097 W JP2008065097 W JP 2008065097W WO 2009031423 A1 WO2009031423 A1 WO 2009031423A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
metal oxide
oxide semiconductor
film transistor
same
Prior art date
Application number
PCT/JP2008/065097
Other languages
English (en)
French (fr)
Inventor
Katsura Hirai
Hiroshi Kita
Kazuhiro Fukuda
Original Assignee
Konica Minolta Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Holdings, Inc. filed Critical Konica Minolta Holdings, Inc.
Priority to JP2009531188A priority Critical patent/JPWO2009031423A1/ja
Publication of WO2009031423A1 publication Critical patent/WO2009031423A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

　本発明は、キャリア移動度や安定性が高い金属酸化物半導体、さらに生産効率が向上した金属酸化物半導体の製造方法であり、これを用いて安定に動作する薄膜トランジスタ（ＴＦＴ）素子を提供する。本発明においては、金属酸化物半導体の前駆体を含む原料と、キャリアガスの混合気体を、大気圧近傍でプラズマ放電させ、基板上に金属酸化物半導体薄膜を成膜することを特徴とする。
PCT/JP2008/065097 2007-09-03 2008-08-25 金属酸化物半導体薄膜の製造方法、これを用いた薄膜トランジスタ WO2009031423A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009531188A JPWO2009031423A1 (ja) 2007-09-03 2008-08-25 金属酸化物半導体薄膜の製造方法、これを用いた薄膜トランジスタ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-227498 2007-09-03
JP2007227498 2007-09-03

Publications (1)

Publication Number Publication Date
WO2009031423A1 true WO2009031423A1 (ja) 2009-03-12

Family

ID=40428743

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065097 WO2009031423A1 (ja) 2007-09-03 2008-08-25 金属酸化物半導体薄膜の製造方法、これを用いた薄膜トランジスタ

Country Status (2)

Country Link
JP (1) JPWO2009031423A1 (ja)
WO (1) WO2009031423A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011039982A1 (ja) * 2009-09-30 2011-04-07 富士機械製造株式会社 表面処理装置および表面処理方法
WO2011108382A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
JP2018107240A (ja) * 2016-12-26 2018-07-05 東芝三菱電機産業システム株式会社 薄膜製造装置及び薄膜製造方法
JP2020074411A (ja) * 2012-05-24 2020-05-14 株式会社ニコン ミスト成膜装置
JP2020531698A (ja) * 2017-08-23 2020-11-05 モレキュラー・プラズマ・グループ・ソシエテ・アノニムＭｏｌｅｃｕｌａｒ Ｐｌａｓｍａ Ｇｒｏｕｐ Ｓａ 機械的に耐久性のある超疎水性ナノ構造コーティングのためのソフトプラズマ重合方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105220131B (zh) * 2015-10-10 2018-04-10 无锡盈芯半导体科技有限公司 脉冲气流法制备薄膜晶体管igzo半导体薄膜层的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07138761A (ja) * 1993-02-26 1995-05-30 Res Dev Corp Of Japan 薄膜の製造方法とその装置
JP2000273636A (ja) * 1999-03-25 2000-10-03 Okura Ind Co Ltd 酸化亜鉛薄膜の形成方法
JP2004052028A (ja) * 2002-07-18 2004-02-19 Konica Minolta Holdings Inc 積層膜を形成する方法及び反射防止フィルム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07138761A (ja) * 1993-02-26 1995-05-30 Res Dev Corp Of Japan 薄膜の製造方法とその装置
JP2000273636A (ja) * 1999-03-25 2000-10-03 Okura Ind Co Ltd 酸化亜鉛薄膜の形成方法
JP2004052028A (ja) * 2002-07-18 2004-02-19 Konica Minolta Holdings Inc 積層膜を形成する方法及び反射防止フィルム

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011039982A1 (ja) * 2009-09-30 2011-04-07 富士機械製造株式会社 表面処理装置および表面処理方法
WO2011108382A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI597782B (zh) * 2010-03-05 2017-09-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
US9780229B2 (en) 2010-05-20 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2020074411A (ja) * 2012-05-24 2020-05-14 株式会社ニコン ミスト成膜装置
JP2022020691A (ja) * 2012-05-24 2022-02-01 株式会社ニコン デバイス製造装置
JP7222416B2 (ja) 2012-05-24 2023-02-15 株式会社ニコン デバイス製造装置
JP2018107240A (ja) * 2016-12-26 2018-07-05 東芝三菱電機産業システム株式会社 薄膜製造装置及び薄膜製造方法
JP2020531698A (ja) * 2017-08-23 2020-11-05 モレキュラー・プラズマ・グループ・ソシエテ・アノニムＭｏｌｅｃｕｌａｒ Ｐｌａｓｍａ Ｇｒｏｕｐ Ｓａ 機械的に耐久性のある超疎水性ナノ構造コーティングのためのソフトプラズマ重合方法
JP7458976B2 (ja) 2017-08-23 2024-04-01 モレキュラー・プラズマ・グループ・ソシエテ・アノニム 機械的に耐久性のある超疎水性ナノ構造コーティングのためのソフトプラズマ重合方法

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