JP5767258B2 - 温度に敏感な材料の気化 - Google Patents
温度に敏感な材料の気化 Download PDFInfo
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- JP5767258B2 JP5767258B2 JP2013022462A JP2013022462A JP5767258B2 JP 5767258 B2 JP5767258 B2 JP 5767258B2 JP 2013022462 A JP2013022462 A JP 2013022462A JP 2013022462 A JP2013022462 A JP 2013022462A JP 5767258 B2 JP5767258 B2 JP 5767258B2
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- 239000011882 ultra-fine particle Substances 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Description
a)所定量の材料を気化装置の中に供給し;
b)その気化装置の中にあるその材料を第1の温度状態に加熱し;
c)その材料の一部に作用する熱パルスを印加してその材料のその部分を気化させることにより基板の表面に付着させる操作を含む方法によって達成される。
それについては、2003年1月28日にJeremy M. Graceらによって「熱による物理的蒸着システムの設計法」という名称で出願されて譲受人に譲渡されたアメリカ合衆国特許出願シリアル番号第10/352,558号に記載されている(参考としてその開示内容はこの明細書に組み込まれているものとする)。このコンダクタンス比によってマニホールド88内の圧力が実質的に均一になることが促進されるため、圧力が局所的に不均一になる可能性があるにもかかわらず、供給源の長さに沿って分布している開口部89を通じた流れの不均一性は小さくなる。
Q1とQ2は、独立に、芳香族第三級アミン部分の中から選択され、
Gは、炭素-炭素結合の結合基(例えば、アリーレン基、シクロアルキレン基、アルキレン基など)である。
R1とR2は、それぞれ独立に、水素原子、アリール基、アルキル基のいずれかを表わすか、R1とR2は、合わさって、シクロアルキル基を完成させる原子を表わし;
R3とR4は、それぞれ独立にアリール基を表わし、そのアリール基は、構造式(C):
R5とR6は、独立に、アリール基の中から選択される。一実施態様では、R5とR6のうちの少なくとも一方は、多環縮合環構造(例えばナフタレン)を含んでいる。
それぞれのAreは、独立に、アリーレン基(例えばフェニレン基またはアントラセン基)の中から選択され;
nは1〜4の整数であり;
Ar、R7、R8、R9は、独立に、アリール基の中から選択される。
2 マニホールド
3 出口面
4 開口部
5 蒸発体
6 気化領域
7 加熱素子
8 温度がより低い領域
9 熱パルス
20 供給源
22 基板
25 供給源
27 基板
30 マニホールド
32 基板
34 開口部
40 ホスト・パルス
41 ドーパント・パルス
44 ホスト・パルス
45 ドーパント・パルス
48 熱パルス
49 熱パルス
51 フラッシュ気化源
52 シールド
53 堆積領域
54 基板
55 並進台
56 並進機構
57 モータ
58 モータ制御ユニット
60 主制御ユニット
61 熱パルス発生装置
62 材料供給制御ユニット
70 堆積領域
71 鉛直シールド
73 蒸着源
75 蒸気プルーム
77 基板
80 気化装置
82 第1の加熱領域
84 第2の加熱領域
85 ベース・ブロック
86 制御通路
87 加熱素子
88 マニホールド
89 開口部
90 チェンバー
92 材料
85 ピストン
96 駆動ユニット
97 駆動制御ユニット
98 加熱素子制御ユニット
100 放射シールド
110 OLEDデバイス
120 基板
130 アノード
135 正孔注入層
140 正孔輸送層
150 発光層
155 電子輸送層
160 電子注入層
170 有機層
190 カソード
Claims (8)
- 有機材料を気化させて、20cm×20cmを超える面積の基板表面に均一かつ制御された厚さの有機膜を堆積させる方法であって、
a)堆積領域を画定する気化装置の中に所定量の有機材料を供給し、
b)該気化装置内の該有機材料をベース温度Tbに能動的に維持し、
c)ヒーターに電流パルスを供給することにより該有機材料の一部に熱パルスを印加して該有機材料の部分の温度をTbより高い温度Tvに上昇させ、よって該有機材料の部分を蒸気パルスとして気化させ、かつ、該堆積領域内の該気化材料に暴露された該基板表面の所定部分に適用し、
d)該基板にステップ式移動を提供するに際し、該移動を該堆積領域の所定の区分に細分化することにより、該基板表面の該堆積領域に対する位置を変化させ、そして
e)該基板が該堆積領域の一端から他端に移動するまで工程c及びdを1回以上繰り返すことで、該基板表面に均一かつ制御された厚さの有機膜を付着させるに際し、
該ステップ式移動を該熱パルスのタイミングと同期させる
ことを特徴とする方法。 - 該気化装置が、基板を覆うために気化した材料が通過するマニホールドを含む、請求項1に記載の方法。
- 該有機材料を該気化装置に計量供給する操作をさらに含む、請求項1に記載の方法。
- 該材料計量供給操作が該熱パルスのタイミングと同期している、請求項3に記載の方法。
- 該マニホールドに不活性ガスを導入して該マニホールド内のコンダクタンスを維持する操作をさらに含む、請求項2に記載の方法。
- 熱パルス高と熱パルス幅を制御する操作をさらに含む、請求項1に記載の方法。
- 有機材料を気化させて、20cm×20cmを超える面積の基板表面に均一かつ制御された厚さの有機膜を堆積させる方法であって、
a)堆積領域を画定する気化装置の中に所定量の有機材料を供給し、
b)該気化装置内の該有機材料をベース温度T b に能動的に維持し、
c)所定の時間、堆積される材料を加熱素子に対して押し当てる機械式パルスを供給することにより該有機材料の一部に熱パルスを印加して該有機材料の部分の温度をT b より高い温度T v に上昇させ、よって該有機材料の部分を蒸気パルスとして気化させ、かつ、該堆積領域内の該気化材料に暴露された該基板表面の所定部分に適用し、
d)該基板にステップ式移動を提供するに際し、該移動を該堆積領域の所定の区分に細分化することにより、該基板表面の該堆積領域に対する位置を変化させ、そして
e)該基板が該堆積領域の一端から他端に移動するまで工程c及びdを1回以上繰り返すことで、該基板表面に均一かつ制御された厚さの有機膜を付着させるに際し、
該ステップ式移動を該熱パルスのタイミングと同期させる
ことを特徴とする方法。 - 該機械式パルスを、該加熱素子への電流パルスと組み合わせる、請求項7に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/870,623 US20050281948A1 (en) | 2004-06-17 | 2004-06-17 | Vaporizing temperature sensitive materials |
US10/870,623 | 2004-06-17 |
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JP2007516531A Division JP2008503854A (ja) | 2004-06-17 | 2005-06-03 | 温度に敏感な材料の気化 |
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JP2013091857A JP2013091857A (ja) | 2013-05-16 |
JP5767258B2 true JP5767258B2 (ja) | 2015-08-19 |
Family
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JP2007516531A Pending JP2008503854A (ja) | 2004-06-17 | 2005-06-03 | 温度に敏感な材料の気化 |
JP2013022462A Active JP5767258B2 (ja) | 2004-06-17 | 2013-02-07 | 温度に敏感な材料の気化 |
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US (1) | US20050281948A1 (ja) |
EP (1) | EP1759035B1 (ja) |
JP (2) | JP2008503854A (ja) |
CN (1) | CN100549218C (ja) |
TW (1) | TW200615390A (ja) |
WO (1) | WO2006007280A1 (ja) |
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US8119204B2 (en) * | 2007-04-27 | 2012-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Film formation method and method for manufacturing light-emitting device |
US8889223B2 (en) * | 2008-07-28 | 2014-11-18 | Tanaka Kikinzoku Kogyo K.K. | Physical vapor deposition apparatus and physical vapor deposition method |
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CN111286185B (zh) * | 2020-02-28 | 2022-05-20 | 珀力玛新材料(苏州)有限公司 | 温变调光材料、含温变调光材料的变色玻璃和其制备方法 |
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-
2004
- 2004-06-17 US US10/870,623 patent/US20050281948A1/en not_active Abandoned
-
2005
- 2005-06-03 JP JP2007516531A patent/JP2008503854A/ja active Pending
- 2005-06-03 CN CNB2005800195028A patent/CN100549218C/zh active Active
- 2005-06-03 WO PCT/US2005/019648 patent/WO2006007280A1/en not_active Application Discontinuation
- 2005-06-03 EP EP05756637A patent/EP1759035B1/en active Active
- 2005-06-16 TW TW094119929A patent/TW200615390A/zh unknown
-
2013
- 2013-02-07 JP JP2013022462A patent/JP5767258B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN1969055A (zh) | 2007-05-23 |
US20050281948A1 (en) | 2005-12-22 |
JP2008503854A (ja) | 2008-02-07 |
CN100549218C (zh) | 2009-10-14 |
WO2006007280A1 (en) | 2006-01-19 |
JP2013091857A (ja) | 2013-05-16 |
EP1759035A1 (en) | 2007-03-07 |
TW200615390A (en) | 2006-05-16 |
EP1759035B1 (en) | 2011-08-17 |
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