JP5037949B2 - Oledのための温度感受性材料の気化 - Google Patents
Oledのための温度感受性材料の気化 Download PDFInfo
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- JP5037949B2 JP5037949B2 JP2006554149A JP2006554149A JP5037949B2 JP 5037949 B2 JP5037949 B2 JP 5037949B2 JP 2006554149 A JP2006554149 A JP 2006554149A JP 2006554149 A JP2006554149 A JP 2006554149A JP 5037949 B2 JP5037949 B2 JP 5037949B2
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Description
a)ある量の有機材料を気化装置の中に入れ;
b)上記気化装置の第1の加熱領域において、上記有機材料を当該気化温度よりも低い温度に能動的に維持し;
c)上記気化装置の第2の加熱領域を、上記有機材料の気化温度よりも高い温度に加熱し;
d)有機材料の薄い横断区画が所望の速度依存性気化温度に加熱されるよう、有機材料を計量し、制御された速度で第1の加熱領域から第2の加熱領域へと供給する操作を含んでおり、そのことによって有機材料が気化して基板表面に膜が形成される方法によって達成される。
Q1とQ2は、独立に、芳香族第三級アミン部分の中から選択され;
Gは、結合基(例えば、炭素-炭素結合のアリーレン基、シクロアルキレン基、アルキレン基など)である。
R1とR2は、それぞれ独立に、水素原子、アリール基、アルキル基のいずれかを表わすか、R1とR2は、合わさって、シクロアルキル基を完成させる原子を表わし;
R3とR4は、それぞれ独立にアリール基を表わし、そのアリール基は、構造式C:
R5とR6は、独立に、アリール基の中から選択される。一実施態様では、R5とR6のうちの少なくとも一方は、多環縮合環構造(例えばナフタレン)を含んでいる。
それぞれのAreは、独立に、アリーレン基(例えばフェニレン部分またはアントラセン部分)の中から選択され;
nは1〜4の整数であり;
Ar、R7、R8、R9は、独立に、アリール基の中から選択される。
10 有機材料
15 チェンバー
20 基部ブロック
25 第1の加熱領域
30 制御通路
35 第2の加熱領域
40 透過膜
45 気化装置
50 ピストン
55 気化装置
60 マニホールド
65 液体
70 シールド
75 装着用ロック装置
80 蒸着チェンバー
85 OLED基板
90 開口部
95 並進移動装置
100 真空源
105 回転ドラム
110 OLEDデバイス
120 基板
130 アノード
135 正孔注入層
140 正孔輸送層
150 発光層
155 電子輸送層
160 電子注入層
170 有機層
190 カソード
Claims (23)
- 有機材料を気化させて基板の表面に膜を形成する方法であって、
a)ある量の固体の有機材料を気化装置の中に入れ;
b)上記気化装置の第1の加熱領域において、上記有機材料を当該気化温度よりも低い温度に能動的に維持し;
c)上記気化装置の第2の加熱領域を、上記有機材料の気化温度よりも高い温度に加熱し;
d)有機材料の薄い横断区画が所望の速度依存性気化温度に加熱されるよう、固体の有機材料を計量し、制御された速度で第1の加熱領域から第2の加熱領域へと供給する操作を含んでおり、そのことによって有機材料が気化して基板表面に膜が形成される方法。 - 上記有機材料を計量し、気化速度に比例して変化する制御された速度で透過膜を通過させて第2の加熱領域へと供給する、請求項1に記載の方法。
- 蒸着チェンバーを用意する操作と気化を中断する操作をさらに含んでおり、そのことによって基板の表面が被覆されていないときに蒸着チェンバーの壁の汚染が最少になり、有機材料が保持される、請求項1に記載の方法。
- 上記第2の加熱領域の体積を一定に維持することで、一定の形状の気柱を確立して維持する、請求項1に記載の方法。
- 上記有機材料が消費されていくとき、上記第1の加熱領域のヒーターを一定温度に維持する、請求項1に記載の方法。
- 上記有機材料が消費されていくとき、上記第2の加熱領域のヒーターを一定温度に維持する、請求項1に記載の方法。
- 上記第1の加熱領域の中にある有機材料を取り囲む冷却用基部ブロックを用意し、その冷却用基部ブロックと前記第1の加熱領域の中にある有機材料の間に液体を供給することにより、前記有機材料と前記冷却用基部ブロックの間に熱接触と気密性を与える操作をさらに含む、請求項1に記載の方法。
- 上記有機材料を回転ドラムの表面で計量し、その際、該有機材料は静電力により該ドラムに付着されるか、又は該ドラムが有する特徴ある表面に含められ、気化速度に比例して変化する制御された速度で第2の加熱領域に供給する、請求項1に記載の方法。
- 有機材料を気化させて基板の表面に膜を形成する方法であって、
a)少なくとも2つの有機成分を含むある量の固体の有機材料を気化装置の中に入れ;
b)上記気化装置の中の第1の加熱領域において、上記有機材料を、それぞれの有機成分の気化温度よりも低い温度に能動的に維持し;
c)上記気化装置の中の第2の加熱領域を、上記有機材料の各有機成分の気化温度よりも高い温度に加熱し;
d)有機材料の薄い横断区画が各有機成分に関して所望の速度依存性気化温度に加熱されるよう、固体の有機材料を計量し、制御された速度で第1の加熱領域から第2の加熱領域へと供給する操作を含んでおり、そのことによって有機材料の各有機成分が同時に気化して基板表面に膜が形成される方法。 - 上記有機材料を計量し、気化速度に比例して変化する制御された速度で透過膜を通過させて第2の加熱領域へと供給する、請求項9に記載の方法。
- 蒸着チェンバーを用意する操作と気化を中断する操作をさらに含んでおり、そのことによって基板の表面が被覆されていないときに蒸着チェンバーの壁の汚染が最少になり、有機材料が保持される、請求項9に記載の方法。
- 材料の分解なしに実質的により大きな気化速度を実現するためにより高い温度に加熱できる高温維持時間をさらに用意する、請求項9に記載の方法。
- 上記第2の加熱領域の体積を一定に維持することで、一定の形状の気柱を確立して維持する、請求項9に記載の方法。
- 上記有機材料が消費されていくとき、上記第1の加熱領域のヒーターを一定温度に維持する、請求項9に記載の方法。
- 上記第1の加熱領域の中にある有機材料を取り囲む冷却用基部ブロックを用意し、その冷却用基部ブロックと前記第1の加熱領域の中にある有機材料の間に液体を供給することにより、前記有機材料と前記冷却用基部ブロックの間に熱接触と気密性を与える操作をさらに含む、請求項9に記載の方法。
- 有機材料を気化させて基板の表面に膜を形成する装置であって、この装置が、
a)第1の加熱領域と、その第1の加熱領域とは離れた第2の加熱領域が区画されていて、異なる気化温度を持つ1つ以上の有機成分を含むことのできるある量の固体の有機材料を収容する気化装置と;
b)上記第1の加熱領域にある上記有機材料を、その有機材料の気化温度よりも低い温度まで加熱し、その有機材料が所定の温度を超えた後にその有機材料を冷却する第1の加熱手段と;
c)上記気化装置の第2の加熱領域を、上記1つ以上の有機成分それぞれの気化温度よりも高い温度に加熱する第2の加熱手段と;
d)透過膜を備えていて、有機材料の薄い横断区画が所望の速度依存性気化温度に加熱されるよう、固体の有機材料を計量し、制御された速度で第1の加熱領域から第2の加熱領域へと供給する計量・供給手段とを備えていることで、有機材料が気化して基板表面に膜が形成される装置。 - 上記第1の加熱手段が、制御通路と、流体をその制御通路を通じて吸引する手段とを備えていて、その流体が、上記第1の加熱領域から熱を吸収するか、上記第1の加熱領域に熱を供給する構成にされている、請求項16に記載の装置。
- 上記計量・供給手段が、上記有機材料を収容するチェンバーと、計量して供給するためにその有機材料をそのチェンバー内で持ち上げるピストンを備える、請求項16に記載の装置。
- 上記第1の加熱手段が、上記第1の加熱領域の中にある有機材料を取り囲む冷却用基部ブロックを備えており、その冷却用基部ブロックと前記第1の加熱領域の中にある有機材料の間に液体を供給することにより、前記有機材料と前記冷却用基部ブロックの間に熱接触と気密性が与えられる、請求項16に記載の装置。
- 上記計量・供給手段が、有機材料を計量し、気化速度に比例して変化する制御された速度で第2の加熱領域に供給する、請求項16に記載の装置。
- 基板を取り囲んでいて、気化した有機材料を収容する蒸着チェンバーをさらに備えており、上記第2の加熱手段が、加熱を中断して温度を上記1つ以上の有機成分の気化温度よりも低くする手段を備えているため、基板の表面が被覆されていないときに蒸着チェンバーの壁の汚染が最少になり、有機材料が保持される、請求項16に記載の装置。
- 上記計量・供給手段が上記第2の加熱領域の体積を一定に維持することで、一定の形状の気柱を確立して維持する、請求項16に記載の装置。
- 上記有機材料が消費されていくとき、上記第1の加熱領域のヒーターを一定温度に維持する、請求項16に記載の装置。
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US10/784,585 US7232588B2 (en) | 2004-02-23 | 2004-02-23 | Device and method for vaporizing temperature sensitive materials |
US10/784,585 | 2004-02-23 | ||
PCT/US2005/004544 WO2005083146A2 (en) | 2004-02-23 | 2005-02-11 | Vaporizing temperature sensitive materials for oled |
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JP5037949B2 true JP5037949B2 (ja) | 2012-10-03 |
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EP (1) | EP1721025B1 (ja) |
JP (1) | JP5037949B2 (ja) |
KR (1) | KR101171209B1 (ja) |
CN (1) | CN100482017C (ja) |
DE (1) | DE602005002033T2 (ja) |
TW (1) | TWI357775B (ja) |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009503256A (ja) * | 2005-07-27 | 2009-01-29 | イーストマン コダック カンパニー | 材料を一定速度で気化させる方法 |
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Publication number | Publication date |
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CN100482017C (zh) | 2009-04-22 |
US20100206233A1 (en) | 2010-08-19 |
JP2007526396A (ja) | 2007-09-13 |
US7232588B2 (en) | 2007-06-19 |
TW200541387A (en) | 2005-12-16 |
US20050186340A1 (en) | 2005-08-25 |
WO2005083146A3 (en) | 2006-02-23 |
EP1721025A2 (en) | 2006-11-15 |
KR20070009990A (ko) | 2007-01-19 |
DE602005002033D1 (de) | 2007-09-27 |
TWI357775B (en) | 2012-02-01 |
WO2005083146A2 (en) | 2005-09-09 |
KR101171209B1 (ko) | 2012-08-06 |
US20070207261A1 (en) | 2007-09-06 |
US7704554B2 (en) | 2010-04-27 |
EP1721025B1 (en) | 2007-08-15 |
DE602005002033T2 (de) | 2008-05-15 |
CN1922927A (zh) | 2007-02-28 |
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