JP5026953B2 - 厚さを非常に均一にできる蒸発源 - Google Patents
厚さを非常に均一にできる蒸発源 Download PDFInfo
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- JP5026953B2 JP5026953B2 JP2007504997A JP2007504997A JP5026953B2 JP 5026953 B2 JP5026953 B2 JP 5026953B2 JP 2007504997 A JP2007504997 A JP 2007504997A JP 2007504997 A JP2007504997 A JP 2007504997A JP 5026953 B2 JP5026953 B2 JP 5026953B2
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- 0 CC(*N(*)*)N(C)C Chemical compound CC(*N(*)*)N(C)C 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
(a)有機材料を収容するチェンバーを画定する側壁及び底部壁並びに該側壁間に配置された開口プレートを含み、該開口プレートが、気化した有機材料を放出させるための互いに離れた複数の開口部を有するマニホールドを含み;
(b)上記開口プレートは、電流に応答して熱を発生させる導電性材料を含み;
(c)上記有機材料をその気化温度に加熱するとともに、上記マニホールドの側壁を加熱する手段を含み;
(d)上記開口プレートを上記側壁にカップリングさせて、上記開口プレートの該開口部に隣接する支持されていない領域に熱を集める電気的絶縁体を含むことにより、上記開口プレートと上記基板との間の距離を小さくして基板上のコーティングの厚さの均一性を高くすることができる蒸着源によって達成される。
Q1とQ2は、独立に、芳香族第三級アミン部分の中から選択され;
Gは、結合基(例えば、炭素-炭素結合のアリーレン基、シクロアルキレン基、アルキレン基など)である。
R1とR2は、それぞれ独立に、水素原子、アリール基、アルキル基のいずれかを表わすか、R1とR2は、合わさって、シクロアルキル基を完成させる原子を表わし;
R3とR4は、それぞれ独立にアリール基を表わし、そのアリール基は、構造式C:
R5とR6は、独立に、アリール基の中から選択される。一実施態様では、R5とR6のうちの少なくとも一方は、多環縮合環構造(例えばナフタレン)を含んでいる。
それぞれのAreは、独立に、アリーレン基(例えばフェニレン部分またはアントラセン部分)の中から選択され;
nは1〜4の整数であり;
Ar、R7、R8、R9は、独立に、アリール基の中から選択される。
10 有機材料
15 蒸着源
20 基部ブロック
25 ヒーター
30 制御通路
35 シール領域
40 開口プレート
45 チェンバー
50 加熱素子
52 シュラウド
55 側壁
60 マニホールド
65 底部壁
70 放射シールド
75 装着用ロック装置
80 真空チェンバー
85 OLED基板
90 開口部
95 並進装置
100 真空源
105 照射距離
110 加熱素子
115 マニホールド開口部
120 絶縁体
125 絶縁体開口部
130 外側導電体
135 内側導電体
140 貫通部
210 OLEDデバイス
220 基板
230 アノード
235 正孔注入層
240 正孔輸送層
250 発光層
255 電子輸送層
260 電子注入層
270 有機層
290 カソード
Claims (3)
- 真空チェンバーの中でOLEDデバイスの基板に有機層をコーティングするのに用いる蒸着源であって、
有機材料を収容するチェンバーを画定する側壁及び底部壁を含むマニホールドと、
該側壁に支持されて該チェンバーの最上部を画定する開口プレートであって、気化した有機材料を放出させるための互いに離れた複数の開口部を有し、該開口部の隣接部分は該側壁に支持されておらず、かつ、電流に応答して熱を発生させる導電性材料を含む、開口プレートと、
該有機材料をその気化温度に加熱するとともに、該マニホールドの該側壁を加熱する手段と、
該開口プレートの該側壁に支持されている領域に結合された電気的絶縁体であって、該開口プレートの該開口部に隣接する支持されていない領域に熱を集める電気的絶縁体とを含み、
よって、該開口プレートと該基板との間の距離を小さくして該基板上のコーティングの厚さの均一性を高くすることができる蒸着源。 - 真空チェンバーの中でOLEDデバイスの基板に有機層をコーティングするのに用いる蒸着源であって、
有機材料を収容するチェンバーを画定する側壁及び底部壁を含むマニホールドと、
該側壁に支持されて該チェンバーの最上部を画定する開口プレートであって、気化した有機材料を放出させるための互いに離れた複数の開口部を有し、該開口部の隣接部分は該側壁に支持されておらず、かつ、電流に応答して熱を発生させる導電性材料を含む、開口プレートと、
該マニホールドの側壁を加熱することにより、該有機材料をその気化温度に加熱する手段と、
該開口プレートの該側壁に支持されている領域に結合された電気的絶縁体であって、該開口プレートの該開口部に隣接する支持されていない領域に熱を集める電気的絶縁体とを含み、
よって、該開口プレートと該基板との間の距離を小さくして該基板上のコーティングの厚さの均一性を高くすることができる蒸着源。 - 真空チェンバーの中で基板に有機層をコーティングする方法であって、
有機材料を収容するチェンバーを画定する側壁及び底部壁を含むマニホールドと、
該側壁に支持されて該チェンバーの最上部を画定する開口プレートであって、気化した有機材料を放出させるための互いに離れた複数の開口部を有し、該開口部の隣接部分は該側壁に支持されておらず、かつ、電流に応答して熱を発生させる導電性材料を含む、開口プレートと、を用意するステップと、
該有機材料をその気化温度に加熱するとともに、該マニホールドの該側壁を加熱するステップと、
該開口プレートの該側壁に支持されている領域に結合された電気的絶縁体により、該開口プレートの該開口部に隣接する支持されていない領域に熱を集めるステップとを含み、
よって該開口プレートと該基板との間の距離を小さくして該基板上のコーティングの厚さの均一性を高くすることができることを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/805,847 US7364772B2 (en) | 2004-03-22 | 2004-03-22 | Method for coating an organic layer onto a substrate in a vacuum chamber |
US10/805,847 | 2004-03-22 | ||
PCT/US2005/008252 WO2005098079A1 (en) | 2004-03-22 | 2005-03-11 | High thickness uniformity vaporization source |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007530786A JP2007530786A (ja) | 2007-11-01 |
JP2007530786A5 JP2007530786A5 (ja) | 2008-04-17 |
JP5026953B2 true JP5026953B2 (ja) | 2012-09-19 |
Family
ID=34962534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007504997A Active JP5026953B2 (ja) | 2004-03-22 | 2005-03-11 | 厚さを非常に均一にできる蒸発源 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7364772B2 (ja) |
EP (1) | EP1727922B1 (ja) |
JP (1) | JP5026953B2 (ja) |
TW (1) | TWI356855B (ja) |
WO (1) | WO2005098079A1 (ja) |
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JP5173175B2 (ja) * | 2006-09-29 | 2013-03-27 | 東京エレクトロン株式会社 | 蒸着装置 |
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DE102010041380A1 (de) | 2009-09-25 | 2011-04-28 | Von Ardenne Anlagentechnik Gmbh | Verdampfereinrichtung für eine Beschichtungsanlage |
US9920418B1 (en) | 2010-09-27 | 2018-03-20 | James Stabile | Physical vapor deposition apparatus having a tapered chamber |
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JP6147163B2 (ja) * | 2013-10-31 | 2017-06-14 | 株式会社アルバック | 蒸発装置、成膜装置 |
GB201321937D0 (en) * | 2013-12-11 | 2014-01-22 | Aes Eng Ltd | Mechanical Seals |
FR3036710B1 (fr) * | 2015-05-27 | 2020-06-19 | China Triumph International Engineering Co., Ltd. | Diaphragme a comportement d'emission thermique optimise |
CN105420675A (zh) * | 2015-12-30 | 2016-03-23 | 山东大学 | 一种减少蒸发镀膜设备中衬底或其上的材料受烘烤升温影响的装置及应用 |
CN105543782A (zh) * | 2015-12-30 | 2016-05-04 | 山东大学 | 一种避免衬底或其上的材料受烘烤损坏的蒸发镀膜设备及应用 |
WO2018114373A1 (en) * | 2016-12-22 | 2018-06-28 | Flisom Ag | Linear source for vapor deposition with at least three electrical heating elements |
CN107604340B (zh) * | 2017-08-31 | 2023-09-01 | 安徽光智科技有限公司 | 化学气相沉积炉 |
CN107815647B (zh) * | 2017-09-21 | 2020-01-17 | 上海升翕光电科技有限公司 | 一种用于oled蒸镀的蒸发源装置 |
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-
2004
- 2004-03-22 US US10/805,847 patent/US7364772B2/en active Active
-
2005
- 2005-03-11 EP EP05725436.9A patent/EP1727922B1/en active Active
- 2005-03-11 JP JP2007504997A patent/JP5026953B2/ja active Active
- 2005-03-11 WO PCT/US2005/008252 patent/WO2005098079A1/en not_active Application Discontinuation
- 2005-03-21 TW TW094108535A patent/TWI356855B/zh active
Also Published As
Publication number | Publication date |
---|---|
TWI356855B (en) | 2012-01-21 |
EP1727922B1 (en) | 2015-02-25 |
JP2007530786A (ja) | 2007-11-01 |
EP1727922A1 (en) | 2006-12-06 |
US20050208216A1 (en) | 2005-09-22 |
TW200602512A (en) | 2006-01-16 |
US7364772B2 (en) | 2008-04-29 |
WO2005098079A1 (en) | 2005-10-20 |
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