FR3036710B1 - Diaphragme a comportement d'emission thermique optimise - Google Patents
Diaphragme a comportement d'emission thermique optimise Download PDFInfo
- Publication number
- FR3036710B1 FR3036710B1 FR1554767A FR1554767A FR3036710B1 FR 3036710 B1 FR3036710 B1 FR 3036710B1 FR 1554767 A FR1554767 A FR 1554767A FR 1554767 A FR1554767 A FR 1554767A FR 3036710 B1 FR3036710 B1 FR 3036710B1
- Authority
- FR
- France
- Prior art keywords
- diaphragm
- thermal emission
- emission behavior
- optimized thermal
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 abstract 4
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
- C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
- C30B29/50—Cadmium sulfide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Il est présenté une dispositif pour revêtement par procédé CSS de substrats dans lequel un diaphragme (2) est disposé entre un creuset (3) chauffé avec une substance capable de se sublimer et le substrat (1) à recouvrir, le diaphragme (2) sur la face tournée vers le creuset (3) et/ou le substrat (1) présentant une structure de surface et/ou un revêtement et/ou une couverture qui augmente(nt) l'émission thermique dans la direction du creuset (3) et/ou rédui(sen)t l'émission thermique dans la direction du substrat (1).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1554767A FR3036710B1 (fr) | 2015-05-27 | 2015-05-27 | Diaphragme a comportement d'emission thermique optimise |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1554767A FR3036710B1 (fr) | 2015-05-27 | 2015-05-27 | Diaphragme a comportement d'emission thermique optimise |
FR1554767 | 2015-05-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3036710A1 FR3036710A1 (fr) | 2016-12-02 |
FR3036710B1 true FR3036710B1 (fr) | 2020-06-19 |
Family
ID=54783695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1554767A Active FR3036710B1 (fr) | 2015-05-27 | 2015-05-27 | Diaphragme a comportement d'emission thermique optimise |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR3036710B1 (fr) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6043913B2 (ja) * | 1980-02-29 | 1985-10-01 | 積水化学工業株式会社 | 蒸発源用るつぼ |
ATE374263T1 (de) * | 1999-03-29 | 2007-10-15 | Antec Solar Energy Ag | Vorrichtung und verfahren zur beschichtung von substraten durch aufdampfen mittels eines pvd- verfahrens |
US7194197B1 (en) * | 2000-03-16 | 2007-03-20 | Global Solar Energy, Inc. | Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer |
US20040076810A1 (en) * | 2002-10-17 | 2004-04-22 | Ucar Carbon Company Inc. | Composite high temperature insulator |
US7364772B2 (en) * | 2004-03-22 | 2008-04-29 | Eastman Kodak Company | Method for coating an organic layer onto a substrate in a vacuum chamber |
PL1752554T3 (pl) * | 2005-07-28 | 2008-03-31 | Applied Mat Gmbh & Co Kg | Urządzenie do naparowywania |
WO2009134041A2 (fr) * | 2008-04-29 | 2009-11-05 | Sunic System. Ltd. | Évaporateur et appareil de dépôt sous vide muni de celui-ci |
US8163089B2 (en) * | 2009-12-16 | 2012-04-24 | Primestar Solar, Inc. | Vapor deposition apparatus and process for continuous deposition of a thin film layer on a substrate |
US9093599B2 (en) * | 2013-07-26 | 2015-07-28 | First Solar, Inc. | Vapor deposition apparatus for continuous deposition of multiple thin film layers on a substrate |
-
2015
- 2015-05-27 FR FR1554767A patent/FR3036710B1/fr active Active
Also Published As
Publication number | Publication date |
---|---|
FR3036710A1 (fr) | 2016-12-02 |
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