FR3036710B1 - Diaphragme a comportement d'emission thermique optimise - Google Patents

Diaphragme a comportement d'emission thermique optimise Download PDF

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Publication number
FR3036710B1
FR3036710B1 FR1554767A FR1554767A FR3036710B1 FR 3036710 B1 FR3036710 B1 FR 3036710B1 FR 1554767 A FR1554767 A FR 1554767A FR 1554767 A FR1554767 A FR 1554767A FR 3036710 B1 FR3036710 B1 FR 3036710B1
Authority
FR
France
Prior art keywords
diaphragm
thermal emission
emission behavior
optimized thermal
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1554767A
Other languages
English (en)
Other versions
FR3036710A1 (fr
Inventor
Bastian Siepchen
Shou Peng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China Triumph International Engineering Co Ltd
CTF Solar GmbH
Original Assignee
China Triumph International Engineering Co Ltd
CTF Solar GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China Triumph International Engineering Co Ltd, CTF Solar GmbH filed Critical China Triumph International Engineering Co Ltd
Priority to FR1554767A priority Critical patent/FR3036710B1/fr
Publication of FR3036710A1 publication Critical patent/FR3036710A1/fr
Application granted granted Critical
Publication of FR3036710B1 publication Critical patent/FR3036710B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C30B29/50—Cadmium sulfide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Il est présenté une dispositif pour revêtement par procédé CSS de substrats dans lequel un diaphragme (2) est disposé entre un creuset (3) chauffé avec une substance capable de se sublimer et le substrat (1) à recouvrir, le diaphragme (2) sur la face tournée vers le creuset (3) et/ou le substrat (1) présentant une structure de surface et/ou un revêtement et/ou une couverture qui augmente(nt) l'émission thermique dans la direction du creuset (3) et/ou rédui(sen)t l'émission thermique dans la direction du substrat (1).
FR1554767A 2015-05-27 2015-05-27 Diaphragme a comportement d'emission thermique optimise Active FR3036710B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1554767A FR3036710B1 (fr) 2015-05-27 2015-05-27 Diaphragme a comportement d'emission thermique optimise

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1554767A FR3036710B1 (fr) 2015-05-27 2015-05-27 Diaphragme a comportement d'emission thermique optimise
FR1554767 2015-05-27

Publications (2)

Publication Number Publication Date
FR3036710A1 FR3036710A1 (fr) 2016-12-02
FR3036710B1 true FR3036710B1 (fr) 2020-06-19

Family

ID=54783695

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1554767A Active FR3036710B1 (fr) 2015-05-27 2015-05-27 Diaphragme a comportement d'emission thermique optimise

Country Status (1)

Country Link
FR (1) FR3036710B1 (fr)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043913B2 (ja) * 1980-02-29 1985-10-01 積水化学工業株式会社 蒸発源用るつぼ
ATE374263T1 (de) * 1999-03-29 2007-10-15 Antec Solar Energy Ag Vorrichtung und verfahren zur beschichtung von substraten durch aufdampfen mittels eines pvd- verfahrens
US7194197B1 (en) * 2000-03-16 2007-03-20 Global Solar Energy, Inc. Nozzle-based, vapor-phase, plume delivery structure for use in production of thin-film deposition layer
US20040076810A1 (en) * 2002-10-17 2004-04-22 Ucar Carbon Company Inc. Composite high temperature insulator
US7364772B2 (en) * 2004-03-22 2008-04-29 Eastman Kodak Company Method for coating an organic layer onto a substrate in a vacuum chamber
PL1752554T3 (pl) * 2005-07-28 2008-03-31 Applied Mat Gmbh & Co Kg Urządzenie do naparowywania
WO2009134041A2 (fr) * 2008-04-29 2009-11-05 Sunic System. Ltd. Évaporateur et appareil de dépôt sous vide muni de celui-ci
US8163089B2 (en) * 2009-12-16 2012-04-24 Primestar Solar, Inc. Vapor deposition apparatus and process for continuous deposition of a thin film layer on a substrate
US9093599B2 (en) * 2013-07-26 2015-07-28 First Solar, Inc. Vapor deposition apparatus for continuous deposition of multiple thin film layers on a substrate

Also Published As

Publication number Publication date
FR3036710A1 (fr) 2016-12-02

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