JP2007530786A - 厚さを非常に均一にできる蒸発源 - Google Patents
厚さを非常に均一にできる蒸発源 Download PDFInfo
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- JP2007530786A JP2007530786A JP2007504997A JP2007504997A JP2007530786A JP 2007530786 A JP2007530786 A JP 2007530786A JP 2007504997 A JP2007504997 A JP 2007504997A JP 2007504997 A JP2007504997 A JP 2007504997A JP 2007530786 A JP2007530786 A JP 2007530786A
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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Abstract
Description
(a)有機材料を収容するチェンバーを画定する側壁及び底部壁並びに該側壁間に配置された開口プレートを含み、該開口プレートが、気化した有機材料を放出させるための互いに離れた複数の開口部を有するマニホールドを含み;
(b)上記開口プレートは、電流に応答して熱を発生させる導電性材料を含み;
(c)上記有機材料をその気化温度に加熱するとともに、上記マニホールドの側壁を加熱する手段を含み;
(d)上記開口プレートを上記側壁にカップリングさせて、上記開口プレートの該開口部に隣接する支持されていない領域に熱を集める電気的絶縁体を含むことにより、上記開口プレートと上記基板との間の距離を小さくして基板上のコーティングの厚さの均一性を高くすることができる蒸着源によって達成される。
Q1とQ2は、独立に、芳香族第三級アミン部分の中から選択され;
Gは、結合基(例えば、炭素-炭素結合のアリーレン基、シクロアルキレン基、アルキレン基など)である。
R1とR2は、それぞれ独立に、水素原子、アリール基、アルキル基のいずれかを表わすか、R1とR2は、合わさって、シクロアルキル基を完成させる原子を表わし;
R3とR4は、それぞれ独立にアリール基を表わし、そのアリール基は、構造式C:
R5とR6は、独立に、アリール基の中から選択される。一実施態様では、R5とR6のうちの少なくとも一方は、多環縮合環構造(例えばナフタレン)を含んでいる。
それぞれのAreは、独立に、アリーレン基(例えばフェニレン部分またはアントラセン部分)の中から選択され;
nは1〜4の整数であり;
Ar、R7、R8、R9は、独立に、アリール基の中から選択される。
10 有機材料
15 蒸着源
20 基部ブロック
25 ヒーター
30 制御通路
35 シール領域
40 開口プレート
45 チェンバー
50 加熱素子
52 シュラウド
55 側壁
60 マニホールド
65 底部壁
70 放射シールド
75 装着用ロック装置
80 真空チェンバー
85 OLED基板
90 開口部
95 並進装置
100 真空源
105 照射距離
110 加熱素子
115 マニホールド開口部
120 絶縁体
125 絶縁体開口部
130 外側導電体
135 内側導電体
140 貫通部
210 OLEDデバイス
220 基板
230 アノード
235 正孔注入層
240 正孔輸送層
250 発光層
255 電子輸送層
260 電子注入層
270 有機層
290 カソード
Claims (23)
- 真空チェンバーの中でOLEDデバイスの基板に有機層をコーティングするのに用いる蒸着源であって、
(a)有機材料を収容するチェンバーを画定する側壁及び底部壁並びに該側壁間に配置された開口プレートを含み、該開口プレートが、気化した有機材料を放出させるための互いに離れた複数の開口部を有するマニホールドを含み;
(b)上記開口プレートは、電流に応答して熱を発生させる導電性材料を含み;
(c)上記有機材料をその気化温度に加熱するとともに、上記マニホールドの側壁を加熱する手段を含み;
(d)上記開口プレートを上記側壁にカップリングさせて、上記開口プレートの該開口部に隣接する支持されていない領域に熱を集める電気的絶縁体を含むことにより、上記開口プレートと上記基板との間の距離を小さくして基板上のコーティングの厚さの均一性を高くすることができる蒸着源。 - 上記開口プレートと上記マニホールドが、エネルギーを上記チェンバーの中に放射する放射率の大きな材料コーティングと、上記基板により少ないエネルギーを放射する放射率の小さな材料コーティングを含む、請求項1に記載の蒸着源。
- 上記加熱手段が、エネルギーを上記チェンバーの中に放射する放射率の大きな材料コーティングを含む、請求項1に記載の蒸着源。
- 上記マニホールドが、上記開口プレートが上記基板に最も近くなる形状にされている、請求項1に記載の蒸着源。
- 上記基板にエネルギーを放射する上記マニホールドの面積を最少にするため上記開口部の近くに配置された放射シールドをさらに備える一方で、その放射シールドが凝縮した有機材料で覆われるリスクが最少にされている、請求項4に記載の蒸着源。
- 各開口部に隣接した上記領域が、上記開口プレートまたは上記マニホールドの他のどの部分よりもわずかに高温に加熱されることで、その開口部の詰まりが最少にされる、請求項1に記載の蒸着源。
- 上記有機材料の塊をその気化温度よりも低温に加熱するとともに、上記マニホールドの下部を加熱する第2の手段を備える、請求項1に記載の蒸着源。
- 上記マニホールド・チェンバーの温度が第1の加熱手段によって制御されることと、そのマニホールド・チェンバーの下部が上記第2の加熱手段によって能動的に制御されて、長さ方向と幅方向に沿って温度が均一にされるとともに、蒸着源で最も低温の部分として上記有機材料と接触することを特徴とする、請求項7に記載の蒸着源。
- 真空チェンバーの中でOLEDデバイスの基板に有機層をコーティングするのに用いる蒸着源であって、
(a)有機材料を収容するチェンバーを画定する側壁及び底部壁並びに該側壁間に配置された開口プレートを含み、該開口プレートが、気化した有機材料を放出させるための互いに離れた複数の開口部を有するマニホールドを含み;
(b)上記開口プレートは、電流に応答して熱を発生させる導電性材料を含み;
(c)上記マニホールドの側壁を加熱することにより、上記有機材料をその気化温度に加熱する手段と;
(d)上記開口プレートを上記側壁にカップリングさせて、上記開口プレートの該開口部に隣接する支持されていない領域に熱を集める電気的絶縁体を含むことにより、上記開口プレートと上記基板との間の距離を小さくして基板上のコーティングの厚さの均一性を高くすることができる蒸着源。 - 上記開口プレートが、エネルギーを上記チェンバーの中に放射する放射率の大きな材料コーティングと、上記基板により少ないエネルギーを放射する放射率の小さな材料コーティングを含む、請求項9に記載の蒸着源。
- 上記加熱手段が、エネルギーを上記チェンバーの中に放射する放射率の大きな材料コーティングを含む、請求項9に記載の蒸着源。
- 上記マニホールドが、上記開口プレートが上記基板に最も近くなる形状にされている、請求項9に記載の蒸着源。
- 上記基板にエネルギーを放射する上記マニホールドの面積を最少にするため上記開口部の近くに配置された放射シールドをさらに備える一方で、その放射シールドが凝縮した有機材料で覆われるリスクが最少にされている、請求項12に記載の蒸着源。
- 各開口部に隣接した上記領域が、上記開口プレートの他のどの部分よりもわずかに高温に加熱されることで、その開口部の詰まりが最少にされている、請求項9に記載の蒸着源。
- 上記有機材料の塊をその気化温度よりも低温に加熱するとともに、上記マニホールドの下部を加熱する第2の手段を備える、請求項9に記載の蒸着源。
- 上記マニホールド・チェンバーの温度が第1の加熱手段によって制御されることと、そのマニホールド・チェンバーの下部が上記第2の加熱手段によって能動的に制御されて、長さ方向と幅方向に沿って温度が均一にされるとともに、蒸着源で最も低温の部分として上記有機材料と接触することを特徴とする、請求項15に記載の蒸着源。
- 真空チェンバーの中で基板に有機層をコーティングする方法であって、
(a)有機材料を収容するチェンバーを画定する側壁及び底部壁並びに該側壁間に配置された開口プレートを含み、該開口プレートが、気化した有機材料を放出させるための互いに離れた複数の開口部を持ち、かつ、電流に応答して熱を発生させる導電性材料を含んでいるマニホールドを用意するステップと;
(b)上記有機材料をその気化温度に加熱するとともに、上記マニホールドの側壁を加熱するステップと;
(c)上記開口プレートの該開口部に隣接する支持されていない領域に熱を集めるステップを含んでおり、よって上記開口プレートと上記基板との間の距離を小さくして基板上のコーティングの厚さの均一性を高くすることができることを特徴とする方法。 - 上記開口プレートと上記マニホールドが、エネルギーを上記チェンバーの中に放射する放射率の大きな材料コーティングと、上記基板により少ないエネルギーを放射する放射率の小さな材料コーティングを含む、請求項17に記載の方法。
- 上記加熱ステップが、エネルギーを上記チェンバーの中に放射する放射率の大きな材料をコーティングする操作を含む、請求項17に記載の方法。
- 上記マニホールドの形状を、上記開口プレートが上記基板に最も近くなるようにする操作を含む、請求項17に記載の方法。
- 上記マニホールドで上記基板にエネルギーを放射する面積を最少にするため上記開口部の近くに放射シールドを配置する一方で、その放射シールドが凝縮した有機材料で覆われるリスクを最少にする操作を含む、請求項20に記載の方法。
- 各開口部に隣接した上記領域を、上記開口プレートまたは上記マニホールドの他のどの部分よりもわずかに高温に加熱することで、その開口部の詰まりを最少にする、請求項17に記載の方法。
- 上記有機材料の塊をその気化温度よりも低温に加熱するとともに、上記マニホールドの下部を加熱する操作を含む、請求項17に記載の方法。
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PCT/US2005/008252 WO2005098079A1 (en) | 2004-03-22 | 2005-03-11 | High thickness uniformity vaporization source |
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WO2012086230A1 (ja) * | 2010-12-20 | 2012-06-28 | 三菱重工業株式会社 | 真空蒸着装置及び真空蒸着方法 |
JP2012132049A (ja) * | 2010-12-20 | 2012-07-12 | Mitsubishi Heavy Ind Ltd | 真空蒸着装置及び真空蒸着方法 |
JP2014105375A (ja) * | 2012-11-29 | 2014-06-09 | Optorun Co Ltd | 真空蒸着源及びそれを用いた真空蒸着方法 |
Also Published As
Publication number | Publication date |
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TW200602512A (en) | 2006-01-16 |
TWI356855B (en) | 2012-01-21 |
JP5026953B2 (ja) | 2012-09-19 |
WO2005098079A1 (en) | 2005-10-20 |
US7364772B2 (en) | 2008-04-29 |
US20050208216A1 (en) | 2005-09-22 |
EP1727922A1 (en) | 2006-12-06 |
EP1727922B1 (en) | 2015-02-25 |
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