JP5719674B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5719674B2 JP5719674B2 JP2011099864A JP2011099864A JP5719674B2 JP 5719674 B2 JP5719674 B2 JP 5719674B2 JP 2011099864 A JP2011099864 A JP 2011099864A JP 2011099864 A JP2011099864 A JP 2011099864A JP 5719674 B2 JP5719674 B2 JP 5719674B2
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- oxide semiconductor
- layer
- semiconductor layer
- oxygen
- transistor
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
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- 238000007865 diluting Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000012905 input function Methods 0.000 description 1
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- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000000838 magnetophoresis Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
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- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02518—Deposited layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02518—Deposited layers
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
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Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図1及び図5を用いて説明する。本実施の形態では、半導体装置の一例としてチャネルが形成される半導体層に酸化物半導体を用いたトランジスタについて詳細に説明する。
本実施の形態では、半導体装置及び半導体装置の作製方法の他の一形態を図2及び図5を用いて説明する。実施の形態1と同一部分又は同様な機能を有する部分、及び工程は、実施の形態1と同様に行うことができ、本実施の形態での繰り返しの説明は省略する。なお、同じ箇所の詳細な説明も省略する。
本実施の形態では、半導体装置及び半導体装置の作製方法の他の一形態を図3及び図5を用いて説明する。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、本実施の形態での繰り返しの説明は省略する。なお、同じ箇所の詳細な説明も省略する。
本実施の形態では、半導体装置及び半導体装置の作製方法の他の一形態を図4及び図5を用いて説明する。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、本実施の形態での繰り返しの説明は省略する。なお、同じ箇所の詳細な説明も省略する。
上記実施の形態のいずれかで一例を示したトランジスタを用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを含む駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。本実施の形態では、上記実施の形態のいずれかで一例を示したトランジスタを用いた表示装置の例について、図7乃至図10を用いて説明する。なお、図8乃至図10は、図7(B)のM−Nにおける断面図に相当する。
上記実施の形態のいずれかで一例を示したトランジスタを用いて、対象物の情報を読み取るイメージセンサ機能を有する半導体装置を作製することができる。
本実施の形態においては、上記実施の形態で説明した表示装置を具備する電子機器の例について説明する。
11 基板供給室
12 ロードロック室
13 搬送室
14 カセットポート
15 真空チャンバー
16 ICPコイル
17 ガス流路
18 高周波電源
19 基板ステージ
20 被処理基板
21 高周波電源
22 自動圧力制御弁
23 ターボ分子ポンプ
24 ドライポンプ
400 基板
401 ゲート電極層
402 ゲート絶縁層
403 酸化物半導体層
404 キャップ層
406 チャネル保護層
407 絶縁層
409 保護絶縁層
410 トランジスタ
411 バックゲート電極層
420 レジストマスク
430 酸素
436 下地層
441 酸化物半導体層
450 トランジスタ
460 トランジスタ
470 トランジスタ
601 基板
602 フォトダイオード
608 接着層
613 基板
622 光
631 絶縁層
632 保護絶縁層
633 層間絶縁層
634 層間絶縁層
640 トランジスタ
641 電極層
642 電極層
643 導電層
644 電極層
645 ゲート電極層
656 トランジスタ
658 フォトダイオードリセット信号線
659 ゲート信号線
671 フォトセンサ出力信号線
672 フォトセンサ基準信号線
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源端子
2723 操作キー
2725 スピーカー
2800 筐体
2801 筐体
2802 表示パネル
2803 スピーカー
2804 マイクロフォン
2805 操作キー
2806 ポインティングデバイス
2807 カメラ用レンズ
2808 外部接続端子
2810 太陽電池セル
2811 外部メモリスロット
3001 本体
3002 筐体
3003 表示部
3004 キーボード
3021 本体
3022 スタイラス
3023 表示部
3024 操作ボタン
3025 外部インターフェイス
3051 本体
3053 接眼部
3054 操作スイッチ
3055 表示部(B)
3056 バッテリー
3057 表示部(A)
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4018a FPC
4018b FPC
4019 異方性導電層
4020 絶縁層
4021 絶縁層
4023 絶縁層
4024 絶縁層
4030 電極層
4031 電極層
4032 絶縁層
4033 絶縁層
4035 スペーサ
4510 隔壁
4511 電界発光層
4513 発光素子
4514 充填材
4612 キャビティ
4613 球形粒子
4614 充填材
9601 筐体
9603 表示部
9605 スタンド
9630 筐体
9631 表示部
9632 操作キー
9633 太陽電池
9634 充放電制御回路
9635 バッテリー
9636 コンバータ
9637 コンバータ
405a ソース電極層
405b ドレイン電極層
4615a 黒色領域
4615b 白色領域
606a 半導体層
606b 半導体層
606c 半導体層
Claims (4)
- 絶縁層を形成する工程と、
前記絶縁層に、塩素ガスを用いたプラズマ処理を行う工程と、
前記絶縁層上に、酸化物半導体層を形成する工程と、
前記酸化物半導体層に、酸素を供給する工程と、を有する半導体装置の作製方法であって、
前記塩素ガスを用いたプラズマ処理の工程を経て、前記絶縁層に塩素が供給され、
前記絶縁層に前記塩素が供給される際、同時に、前記絶縁層に酸素が供給され、
前記酸素が供給された酸化物半導体層は、酸素の同位体であるO18を有することを特徴とする半導体装置の作製方法。 - 請求項1において、
前記絶縁層は、基板上に形成されており、
前記塩素ガスを用いたプラズマ処理の工程において、前記基板にバイアスを印加することを特徴とする半導体装置の作製方法。 - 請求項1又は請求項2において、
前記酸化物半導体層に、酸素を供給する工程において、酸素をプラズマ化して、前記基板にバイアスを印加しながら、前記酸化物半導体層に、酸素を供給することを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項3のいずれか一において、
前記酸化物半導体層に供給される酸素は、酸素ラジカル、酸素原子、又は酸素イオンを有することを特徴とする半導体装置の作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011099864A JP5719674B2 (ja) | 2010-04-28 | 2011-04-27 | 半導体装置の作製方法 |
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US20170005182A1 (en) | 2017-01-05 |
US20140308777A1 (en) | 2014-10-16 |
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US20110269266A1 (en) | 2011-11-03 |
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TWI556316B (zh) | 2016-11-01 |
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