JP5710638B2 - オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 - Google Patents

オプトエレクトロニクス素子およびオプトエレクトロニクス素子の製造方法 Download PDF

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JP5710638B2
JP5710638B2 JP2012543585A JP2012543585A JP5710638B2 JP 5710638 B2 JP5710638 B2 JP 5710638B2 JP 2012543585 A JP2012543585 A JP 2012543585A JP 2012543585 A JP2012543585 A JP 2012543585A JP 5710638 B2 JP5710638 B2 JP 5710638B2
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semiconductor
sealing material
layer
semiconductor element
surface region
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JP2013514642A (ja
JP2013514642A5 (enExample
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レル アルフレート
レル アルフレート
ミヒャエル　フェーラー
フェーラー ミヒャエル
シュレンカー ティルマン
シュレンカー ティルマン
タウツ ゼンケ
タウツ ゼンケ
ウーヴェ　シュトラウス
シュトラウス ウーヴェ
マーティン　ミュラー
ミュラー マーティン
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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JP6001114B2 (ja) 2016-10-05
DE102009058796A1 (de) 2011-06-22
CN102668140A (zh) 2012-09-12
WO2011073027A1 (de) 2011-06-23
US20170005234A1 (en) 2017-01-05
CN102668140B (zh) 2016-04-06
TWI446594B (zh) 2014-07-21
EP2513984A1 (de) 2012-10-24
JP2013514642A (ja) 2013-04-25
JP2015146431A (ja) 2015-08-13
US20120326178A1 (en) 2012-12-27

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