JP5660748B2 - 低温エアロゾル堆積方法及び物品 - Google Patents

低温エアロゾル堆積方法及び物品 Download PDF

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Publication number
JP5660748B2
JP5660748B2 JP2007273363A JP2007273363A JP5660748B2 JP 5660748 B2 JP5660748 B2 JP 5660748B2 JP 2007273363 A JP2007273363 A JP 2007273363A JP 2007273363 A JP2007273363 A JP 2007273363A JP 5660748 B2 JP5660748 B2 JP 5660748B2
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substrate
aerosol
processing chamber
fine particles
plasma
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Japanese (ja)
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JP2008106363A5 (enExample
JP2008106363A (ja
Inventor
ワイ サン ジェニファー
ワイ サン ジェニファー
リャボバ エルミラ
リャボバ エルミラ
サッチ センハ
サッチ センハ
ズー シー
ズー シー
エル カッツ セミョン
エル カッツ セミョン
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2008106363A5 publication Critical patent/JP2008106363A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
JP2007273363A 2006-10-23 2007-10-22 低温エアロゾル堆積方法及び物品 Active JP5660748B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/552,013 US7479464B2 (en) 2006-10-23 2006-10-23 Low temperature aerosol deposition of a plasma resistive layer
US11/552,013 2006-10-23

Publications (3)

Publication Number Publication Date
JP2008106363A JP2008106363A (ja) 2008-05-08
JP2008106363A5 JP2008106363A5 (enExample) 2010-12-09
JP5660748B2 true JP5660748B2 (ja) 2015-01-28

Family

ID=38896988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007273363A Active JP5660748B2 (ja) 2006-10-23 2007-10-22 低温エアロゾル堆積方法及び物品

Country Status (6)

Country Link
US (1) US7479464B2 (enExample)
EP (1) EP1918420A1 (enExample)
JP (1) JP5660748B2 (enExample)
KR (1) KR100938474B1 (enExample)
CN (1) CN101168842B (enExample)
TW (1) TWI368937B (enExample)

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KR100941472B1 (ko) * 2007-12-14 2010-02-11 한국기계연구원 에어로졸 증착법을 이용하여 제조된 치밀한 상온 전도성후막 및 이의 제조방법
DE102008047955A1 (de) * 2008-09-18 2010-04-01 Otto Hauser Verfahren und Vorrichtung zur Erzeugung von Halbleiterschichten
KR101108692B1 (ko) * 2010-09-06 2012-01-25 한국기계연구원 다공성 세라믹 표면을 밀봉하는 치밀한 희토류 금속 산화물 코팅막 및 이의 제조방법
JP6084464B2 (ja) 2010-12-01 2017-02-22 株式会社東芝 プラズマエッチング装置用部品およびプラズマエッチング装置用部品の製造方法
KR101254618B1 (ko) * 2011-02-22 2013-04-15 서울대학교산학협력단 내식성 부재의 세라믹 코팅 방법
JP2012221979A (ja) * 2011-04-04 2012-11-12 Toshiba Corp プラズマ処理装置
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US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
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US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
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US9604249B2 (en) 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
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US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US9711334B2 (en) 2013-07-19 2017-07-18 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based thin film coatings on process rings
US9583369B2 (en) * 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US10468235B2 (en) 2013-09-18 2019-11-05 Applied Materials, Inc. Plasma spray coating enhancement using plasma flame heat treatment
US9440886B2 (en) 2013-11-12 2016-09-13 Applied Materials, Inc. Rare-earth oxide based monolithic chamber material
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
WO2015108276A1 (ko) * 2014-01-17 2015-07-23 아이원스 주식회사 복합 피막 입자 입경을 갖는 피막의 형성 방법 및 이에 따른 피막
JP2015140484A (ja) * 2014-01-30 2015-08-03 セイコーエプソン株式会社 時計用外装部品、時計用外装部品の製造方法および時計
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US10975469B2 (en) 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
TWI733815B (zh) * 2017-05-25 2021-07-21 南韓商Ｋｏｍｉｃｏ有限公司 耐電漿塗層的氣膠沉積塗佈法
KR102089949B1 (ko) * 2017-10-20 2020-03-19 세메스 주식회사 기판 처리 장치 및 기판 처리 장치의 부품
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Also Published As

Publication number Publication date
TWI368937B (en) 2012-07-21
KR20080036530A (ko) 2008-04-28
US7479464B2 (en) 2009-01-20
US20080108225A1 (en) 2008-05-08
CN101168842A (zh) 2008-04-30
EP1918420A1 (en) 2008-05-07
TW200820325A (en) 2008-05-01
CN101168842B (zh) 2010-08-25
JP2008106363A (ja) 2008-05-08
KR100938474B1 (ko) 2010-01-25

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