KR100938474B1 - 플라즈마 보호층의 저온 에어로졸 증착 - Google Patents

플라즈마 보호층의 저온 에어로졸 증착 Download PDF

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KR100938474B1
KR100938474B1 KR1020070106078A KR20070106078A KR100938474B1 KR 100938474 B1 KR100938474 B1 KR 100938474B1 KR 1020070106078 A KR1020070106078 A KR 1020070106078A KR 20070106078 A KR20070106078 A KR 20070106078A KR 100938474 B1 KR100938474 B1 KR 100938474B1
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low temperature
aerosol
deposition method
chamber components
fine particles
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KR20080036530A (ko
Inventor
제니퍼 와이. 선
엘미라 라보바
센 타치
시 추
세미온 엘. 카츠
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어플라이드 머티어리얼스, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
KR1020070106078A 2006-10-23 2007-10-22 플라즈마 보호층의 저온 에어로졸 증착 Active KR100938474B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/552,013 US7479464B2 (en) 2006-10-23 2006-10-23 Low temperature aerosol deposition of a plasma resistive layer
US11/552,013 2006-10-23

Publications (2)

Publication Number Publication Date
KR20080036530A KR20080036530A (ko) 2008-04-28
KR100938474B1 true KR100938474B1 (ko) 2010-01-25

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KR1020070106078A Active KR100938474B1 (ko) 2006-10-23 2007-10-22 플라즈마 보호층의 저온 에어로졸 증착

Country Status (6)

Country Link
US (1) US7479464B2 (enExample)
EP (1) EP1918420A1 (enExample)
JP (1) JP5660748B2 (enExample)
KR (1) KR100938474B1 (enExample)
CN (1) CN101168842B (enExample)
TW (1) TWI368937B (enExample)

Cited By (2)

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Publication number Priority date Publication date Assignee Title
KR102522277B1 (ko) 2022-03-24 2023-04-17 주식회사 펨빅스 내플라즈마 2층 코팅막 구조물 및 이의 제조 방법
US12709807B2 (en) 2022-03-24 2026-08-18 Femvix Corp. Plasma-resistant two-layer coating film structure and manufacturing method thereof

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KR100941472B1 (ko) * 2007-12-14 2010-02-11 한국기계연구원 에어로졸 증착법을 이용하여 제조된 치밀한 상온 전도성후막 및 이의 제조방법
DE102008047955A1 (de) * 2008-09-18 2010-04-01 Otto Hauser Verfahren und Vorrichtung zur Erzeugung von Halbleiterschichten
KR101108692B1 (ko) * 2010-09-06 2012-01-25 한국기계연구원 다공성 세라믹 표면을 밀봉하는 치밀한 희토류 금속 산화물 코팅막 및 이의 제조방법
CN103348454B (zh) * 2010-12-01 2016-04-06 株式会社东芝 等离子体蚀刻装置部件及其制造方法
KR101254618B1 (ko) * 2011-02-22 2013-04-15 서울대학교산학협력단 내식성 부재의 세라믹 코팅 방법
JP2012221979A (ja) * 2011-04-04 2012-11-12 Toshiba Corp プラズマ処理装置
FR2983217B1 (fr) 2011-11-25 2015-05-01 Centre De Transfert De Tech Ceramiques C T T C Procede et dispositif de formation d'un depot de materiau(x) fragile(s) sur un substrat par projection de poudre
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JP2015140484A (ja) 2014-01-30 2015-08-03 セイコーエプソン株式会社 時計用外装部品、時計用外装部品の製造方法および時計
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US9869013B2 (en) * 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US10730798B2 (en) 2014-05-07 2020-08-04 Applied Materials, Inc. Slurry plasma spray of plasma resistant ceramic coating
US10196728B2 (en) 2014-05-16 2019-02-05 Applied Materials, Inc. Plasma spray coating design using phase and stress control
US9460898B2 (en) 2014-08-08 2016-10-04 Applied Materials, Inc. Plasma generation chamber with smooth plasma resistant coating
CN105986245A (zh) * 2015-02-16 2016-10-05 中微半导体设备(上海)有限公司 改善mocvd反应工艺的部件及改善方法
US10975469B2 (en) 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
TWI733815B (zh) * 2017-05-25 2021-07-21 南韓商Ｋｏｍｉｃｏ有限公司 耐電漿塗層的氣膠沉積塗佈法
KR102089949B1 (ko) * 2017-10-20 2020-03-19 세메스 주식회사 기판 처리 장치 및 기판 처리 장치의 부품
US10792703B2 (en) 2017-11-21 2020-10-06 New Mexico Tech University Research Park Corporation Aerosol method for coating
US11047035B2 (en) 2018-02-23 2021-06-29 Applied Materials, Inc. Protective yttria coating for semiconductor equipment parts
CN108355855B (zh) * 2018-03-23 2020-05-29 德淮半导体有限公司 增粘剂涂布装置
US11239058B2 (en) * 2018-07-11 2022-02-01 Applied Materials, Inc. Protective layers for processing chamber components
US11795547B2 (en) 2018-07-17 2023-10-24 Komico Ltd. Method of aerosol deposition coating for plasma resistant coating
CN113383405B (zh) * 2019-02-12 2024-08-30 应用材料公司 用于制造腔室部件的方法
CN113454761B (zh) * 2019-03-01 2024-11-08 日本发条株式会社 载物台以及载物台的制造方法
JP2022522752A (ja) * 2019-03-05 2022-04-20 ラム リサーチ コーポレーション プラズマ処理チャンバ用アルミニウム構成部品のための積層エアロゾル堆積被膜
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CN115325753B (zh) * 2022-03-25 2023-05-16 北京航天试验技术研究所 一种基于氦循环的双预冷低温浆体制备装置及其方法
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Cited By (2)

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Publication number Priority date Publication date Assignee Title
KR102522277B1 (ko) 2022-03-24 2023-04-17 주식회사 펨빅스 내플라즈마 2층 코팅막 구조물 및 이의 제조 방법
US12709807B2 (en) 2022-03-24 2026-08-18 Femvix Corp. Plasma-resistant two-layer coating film structure and manufacturing method thereof

Also Published As

Publication number Publication date
JP5660748B2 (ja) 2015-01-28
US20080108225A1 (en) 2008-05-08
KR20080036530A (ko) 2008-04-28
JP2008106363A (ja) 2008-05-08
CN101168842A (zh) 2008-04-30
TWI368937B (en) 2012-07-21
US7479464B2 (en) 2009-01-20
EP1918420A1 (en) 2008-05-07
TW200820325A (en) 2008-05-01
CN101168842B (zh) 2010-08-25

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