CN101168842B - 抗等离子体层的低温气浮沉积 - Google Patents

抗等离子体层的低温气浮沉积 Download PDF

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Publication number
CN101168842B
CN101168842B CN2007101638433A CN200710163843A CN101168842B CN 101168842 B CN101168842 B CN 101168842B CN 2007101638433 A CN2007101638433 A CN 2007101638433A CN 200710163843 A CN200710163843 A CN 200710163843A CN 101168842 B CN101168842 B CN 101168842B
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yttrium
substrate
layer
air flotation
fine particle
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Chinese (zh)
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CN101168842A (zh
Inventor
珍妮弗·Y·孙
埃尔米拉·赖亚博瓦
塞恩·撒奇
熹·朱
西姆仁·L·卡茨
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
CN2007101638433A 2006-10-23 2007-09-30 抗等离子体层的低温气浮沉积 Active CN101168842B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/552,013 US7479464B2 (en) 2006-10-23 2006-10-23 Low temperature aerosol deposition of a plasma resistive layer
US11/552,013 2006-10-23

Publications (2)

Publication Number Publication Date
CN101168842A CN101168842A (zh) 2008-04-30
CN101168842B true CN101168842B (zh) 2010-08-25

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CN2007101638433A Active CN101168842B (zh) 2006-10-23 2007-09-30 抗等离子体层的低温气浮沉积

Country Status (6)

Country Link
US (1) US7479464B2 (enExample)
EP (1) EP1918420A1 (enExample)
JP (1) JP5660748B2 (enExample)
KR (1) KR100938474B1 (enExample)
CN (1) CN101168842B (enExample)
TW (1) TWI368937B (enExample)

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JP2012221979A (ja) * 2011-04-04 2012-11-12 Toshiba Corp プラズマ処理装置
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US9440886B2 (en) 2013-11-12 2016-09-13 Applied Materials, Inc. Rare-earth oxide based monolithic chamber material
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WO2015108276A1 (ko) * 2014-01-17 2015-07-23 아이원스 주식회사 복합 피막 입자 입경을 갖는 피막의 형성 방법 및 이에 따른 피막
JP2015140484A (ja) * 2014-01-30 2015-08-03 セイコーエプソン株式会社 時計用外装部品、時計用外装部品の製造方法および時計
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Also Published As

Publication number Publication date
TWI368937B (en) 2012-07-21
KR20080036530A (ko) 2008-04-28
US7479464B2 (en) 2009-01-20
US20080108225A1 (en) 2008-05-08
CN101168842A (zh) 2008-04-30
EP1918420A1 (en) 2008-05-07
TW200820325A (en) 2008-05-01
JP5660748B2 (ja) 2015-01-28
JP2008106363A (ja) 2008-05-08
KR100938474B1 (ko) 2010-01-25

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