TWI368937B - Low temperature aerosol deposition of a plasma resistive layer - Google Patents

Low temperature aerosol deposition of a plasma resistive layer

Info

Publication number
TWI368937B
TWI368937B TW096138024A TW96138024A TWI368937B TW I368937 B TWI368937 B TW I368937B TW 096138024 A TW096138024 A TW 096138024A TW 96138024 A TW96138024 A TW 96138024A TW I368937 B TWI368937 B TW I368937B
Authority
TW
Taiwan
Prior art keywords
low temperature
resistive layer
aerosol deposition
temperature aerosol
plasma resistive
Prior art date
Application number
TW096138024A
Other languages
English (en)
Chinese (zh)
Other versions
TW200820325A (en
Inventor
Jennifer Y Sun
Elmira Ryabova
Senh Thach
Xi Zhu
Semyon L Kats
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200820325A publication Critical patent/TW200820325A/zh
Application granted granted Critical
Publication of TWI368937B publication Critical patent/TWI368937B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
TW096138024A 2006-10-23 2007-10-11 Low temperature aerosol deposition of a plasma resistive layer TWI368937B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/552,013 US7479464B2 (en) 2006-10-23 2006-10-23 Low temperature aerosol deposition of a plasma resistive layer

Publications (2)

Publication Number Publication Date
TW200820325A TW200820325A (en) 2008-05-01
TWI368937B true TWI368937B (en) 2012-07-21

Family

ID=38896988

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096138024A TWI368937B (en) 2006-10-23 2007-10-11 Low temperature aerosol deposition of a plasma resistive layer

Country Status (6)

Country Link
US (1) US7479464B2 (enExample)
EP (1) EP1918420A1 (enExample)
JP (1) JP5660748B2 (enExample)
KR (1) KR100938474B1 (enExample)
CN (1) CN101168842B (enExample)
TW (1) TWI368937B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI656572B (zh) * 2013-07-20 2019-04-11 應用材料股份有限公司 用於腔室蓋與噴嘴上之稀土氧化物系塗層的離子輔助沉積

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7371467B2 (en) * 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
KR100941472B1 (ko) * 2007-12-14 2010-02-11 한국기계연구원 에어로졸 증착법을 이용하여 제조된 치밀한 상온 전도성후막 및 이의 제조방법
DE102008047955A1 (de) * 2008-09-18 2010-04-01 Otto Hauser Verfahren und Vorrichtung zur Erzeugung von Halbleiterschichten
KR101108692B1 (ko) * 2010-09-06 2012-01-25 한국기계연구원 다공성 세라믹 표면을 밀봉하는 치밀한 희토류 금속 산화물 코팅막 및 이의 제조방법
JP6084464B2 (ja) 2010-12-01 2017-02-22 株式会社東芝 プラズマエッチング装置用部品およびプラズマエッチング装置用部品の製造方法
KR101254618B1 (ko) * 2011-02-22 2013-04-15 서울대학교산학협력단 내식성 부재의 세라믹 코팅 방법
JP2012221979A (ja) * 2011-04-04 2012-11-12 Toshiba Corp プラズマ処理装置
FR2983217B1 (fr) 2011-11-25 2015-05-01 Centre De Transfert De Tech Ceramiques C T T C Procede et dispositif de formation d'un depot de materiau(x) fragile(s) sur un substrat par projection de poudre
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
US9394615B2 (en) 2012-04-27 2016-07-19 Applied Materials, Inc. Plasma resistant ceramic coated conductive article
DE102012106078A1 (de) * 2012-07-06 2014-05-08 Reinhausen Plasma Gmbh Beschichtungsvorrichtung und Verfahren zur Beschichtung eines Substrats
US9604249B2 (en) 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
JP5578383B2 (ja) 2012-12-28 2014-08-27 Ｔｏｔｏ株式会社 耐プラズマ性部材
JP6358492B2 (ja) * 2012-12-28 2018-07-18 Toto株式会社 耐プラズマ性部材
US9708713B2 (en) * 2013-05-24 2017-07-18 Applied Materials, Inc. Aerosol deposition coating for semiconductor chamber components
US9865434B2 (en) 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US9711334B2 (en) 2013-07-19 2017-07-18 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based thin film coatings on process rings
US10468235B2 (en) 2013-09-18 2019-11-05 Applied Materials, Inc. Plasma spray coating enhancement using plasma flame heat treatment
US9440886B2 (en) 2013-11-12 2016-09-13 Applied Materials, Inc. Rare-earth oxide based monolithic chamber material
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
WO2015108276A1 (ko) * 2014-01-17 2015-07-23 아이원스 주식회사 복합 피막 입자 입경을 갖는 피막의 형성 방법 및 이에 따른 피막
JP2015140484A (ja) * 2014-01-30 2015-08-03 セイコーエプソン株式会社 時計用外装部品、時計用外装部品の製造方法および時計
US9869013B2 (en) * 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US9976211B2 (en) 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
US10730798B2 (en) 2014-05-07 2020-08-04 Applied Materials, Inc. Slurry plasma spray of plasma resistant ceramic coating
US10196728B2 (en) 2014-05-16 2019-02-05 Applied Materials, Inc. Plasma spray coating design using phase and stress control
US9460898B2 (en) 2014-08-08 2016-10-04 Applied Materials, Inc. Plasma generation chamber with smooth plasma resistant coating
CN105986245A (zh) * 2015-02-16 2016-10-05 中微半导体设备(上海)有限公司 改善mocvd反应工艺的部件及改善方法
US10975469B2 (en) 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
TWI733815B (zh) * 2017-05-25 2021-07-21 南韓商Ｋｏｍｉｃｏ有限公司 耐電漿塗層的氣膠沉積塗佈法
KR102089949B1 (ko) * 2017-10-20 2020-03-19 세메스 주식회사 기판 처리 장치 및 기판 처리 장치의 부품
WO2019104074A1 (en) 2017-11-21 2019-05-31 New Mexico Tech University Research Park Corporation Aerosol method for coating
US11047035B2 (en) 2018-02-23 2021-06-29 Applied Materials, Inc. Protective yttria coating for semiconductor equipment parts
CN108355855B (zh) * 2018-03-23 2020-05-29 德淮半导体有限公司 增粘剂涂布装置
US11239058B2 (en) 2018-07-11 2022-02-01 Applied Materials, Inc. Protective layers for processing chamber components
WO2020017671A1 (ko) 2018-07-17 2020-01-23 (주)코미코 내 플라즈마 코팅을 위한 에어로졸 증착 코팅방법
KR102616691B1 (ko) * 2019-02-12 2023-12-20 어플라이드 머티어리얼스, 인코포레이티드 챔버 부품들을 제조하기 위한 방법
KR102698715B1 (ko) * 2019-03-01 2024-08-26 닛폰 하츠죠 가부시키가이샤 스테이지 및 스테이지 제작 방법
WO2020180853A1 (en) * 2019-03-05 2020-09-10 Lam Research Corporation Laminated aerosol deposition coating for aluminum components for plasma processing chambers
KR20220131949A (ko) * 2020-01-23 2022-09-29 램 리써치 코포레이션 플라즈마 프로세싱 챔버 컴포넌트들을 위한 이트륨 알루미늄 코팅
JP7115582B2 (ja) * 2020-04-30 2022-08-09 Toto株式会社 複合構造物および複合構造物を備えた半導体製造装置
TW202302910A (zh) * 2020-04-30 2023-01-16 日商Ｔｏｔｏ股份有限公司 複合結構物及具備複合結構物之半導體製造裝置
WO2023042977A1 (ko) * 2021-09-17 2023-03-23 아이원스 주식회사 플라즈마 분말 증착 장치 및 그를 이용한 증착 방법
KR102522277B1 (ko) 2022-03-24 2023-04-17 주식회사 펨빅스 내플라즈마 2층 코팅막 구조물 및 이의 제조 방법
CN115325753B (zh) * 2022-03-25 2023-05-16 北京航天试验技术研究所 一种基于氦循环的双预冷低温浆体制备装置及其方法
WO2023202793A1 (en) * 2022-04-22 2023-10-26 Oerlikon Surface Solutions Ag, Pfäffikon Coating system and method for semiconductor equipment components
TWI834553B (zh) * 2023-05-12 2024-03-01 國立清華大學 氣溶膠沉積設備
US20250114819A1 (en) * 2023-10-10 2025-04-10 Applied Materials, Inc. Resistant coatings including polymer sealant and resistant particles

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6409839B1 (en) 1997-06-02 2002-06-25 Msp Corporation Method and apparatus for vapor generation and film deposition
AU7684900A (en) 1999-10-12 2001-04-23 Japan As Represented By Secretary Of Agency Of Industrial Science And Technology, Ministry Of International Trade And Industry Composite structured material and method for preparation thereof and apparatus for preparation thereof
TW503449B (en) 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
US20040126814A1 (en) 2000-08-21 2004-07-01 Singh Waheguru Pal Sensor having molecularly imprinted polymers
CN1227388C (zh) 2000-10-23 2005-11-16 独立行政法人产业技术综合研究所 复合构成物及其制作方法
CN1225570C (zh) * 2000-10-23 2005-11-02 独立行政法人产业技术综合研究所 复合构成物及其制作方法和制作装置
JP3897623B2 (ja) * 2001-10-11 2007-03-28 独立行政法人産業技術総合研究所 複合構造物作製方法
JP3894313B2 (ja) * 2002-12-19 2007-03-22 信越化学工業株式会社 フッ化物含有膜、被覆部材及びフッ化物含有膜の形成方法
US7579251B2 (en) 2003-05-15 2009-08-25 Fujitsu Limited Aerosol deposition process
JP3864958B2 (ja) * 2004-02-02 2007-01-10 東陶機器株式会社 耐プラズマ性を有する半導体製造装置用部材およびその作製方法
JP2005217350A (ja) * 2004-02-02 2005-08-11 Toto Ltd 耐プラズマ性を有する半導体製造装置用部材およびその作製方法
US20070079936A1 (en) * 2005-09-29 2007-04-12 Applied Materials, Inc. Bonded multi-layer RF window
US7968205B2 (en) 2005-10-21 2011-06-28 Shin-Etsu Chemical Co., Ltd. Corrosion resistant multilayer member
JP2007115973A (ja) 2005-10-21 2007-05-10 Shin Etsu Chem Co Ltd 耐食性部材

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI656572B (zh) * 2013-07-20 2019-04-11 應用材料股份有限公司 用於腔室蓋與噴嘴上之稀土氧化物系塗層的離子輔助沉積

Also Published As

Publication number Publication date
KR20080036530A (ko) 2008-04-28
US7479464B2 (en) 2009-01-20
US20080108225A1 (en) 2008-05-08
CN101168842A (zh) 2008-04-30
EP1918420A1 (en) 2008-05-07
TW200820325A (en) 2008-05-01
CN101168842B (zh) 2010-08-25
JP5660748B2 (ja) 2015-01-28
JP2008106363A (ja) 2008-05-08
KR100938474B1 (ko) 2010-01-25

Similar Documents

Publication Publication Date Title
TWI368937B (en) Low temperature aerosol deposition of a plasma resistive layer
EP2046174A4 (en) COATING LAYER STRUCTURE FOR HEAT COOKING APPARATUS
TWI341009B (en) Chemical vapor deposition
EP2279518A4 (en) ENHANCED COMBINATION TECHNIQUES FOR PLASMA DEPOSITION
PT1993829T (pt) Substrato munido de um empilhamento de camadas finas, vidraça e processo de fabrico de um substrato
IL244776B (en) A composite product that includes a substrate layer with open cells
EP2274961A4 (en) PLASMA-ASSISTED STEAM PHASE CHEMICAL DEPOSITION OF BARRIER COATINGS
GB0805328D0 (en) Deposition of an amorphous layer
EP2018642A4 (en) LOW TEMPERATURE DEPOSITION OF STORAGE MATERIALS
GB2470620B (en) Method of measuring deposition onto a substrate
EP2643099A4 (en) Deposition of a silver layer on a nonconducting substrate
GB0819183D0 (en) Atomic layer deposition powder coating
PL2193223T5 (pl) Sposoby powlekania podłoża metalowego
EP2222764A4 (en) CONTROL OF THE THICKNESS OF A REMAINING LAYER
SG136929A1 (en) A method for the manufacture of a coating
TWI350006B (en) Plasma enhanced thin film deposition method
TWI349044B (en) Apparatus for depositing atomic layer using gas separation type showerhead
SG136897A1 (en) Adhesion layer for protective overcoat
GB2451175B (en) Plasma coating of footwear
EP1852522A4 (en) FILM REMOVED BY VAPOR EVAPORATION BY A PLASMA-ASSISTED STEAM CHEMICAL DEPOSITION PROCESS
GB0622789D0 (en) Droplet deposition method
GB0713821D0 (en) A plasma deposition apparatus
EP2049705A4 (en) IMPROVED METHODS FOR DEPOSITION OF ATOMIC LAYERS
EP2044238A4 (en) SYSTEM AND METHOD FOR DEPOSITING A MATERIAL ON A SUBSTRATE
IL193463A0 (en) Molecular plasma deposition of colloidal materials