TWI368937B - Low temperature aerosol deposition of a plasma resistive layer - Google Patents

Low temperature aerosol deposition of a plasma resistive layer

Info

Publication number
TWI368937B
TWI368937B TW096138024A TW96138024A TWI368937B TW I368937 B TWI368937 B TW I368937B TW 096138024 A TW096138024 A TW 096138024A TW 96138024 A TW96138024 A TW 96138024A TW I368937 B TWI368937 B TW I368937B
Authority
TW
Taiwan
Prior art keywords
low temperature
resistive layer
aerosol deposition
temperature aerosol
plasma resistive
Prior art date
Application number
TW096138024A
Other languages
English (en)
Other versions
TW200820325A (en
Inventor
Jennifer Y Sun
Elmira Ryabova
Senh Thach
Xi Zhu
Semyon L Kats
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200820325A publication Critical patent/TW200820325A/zh
Application granted granted Critical
Publication of TWI368937B publication Critical patent/TWI368937B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
TW096138024A 2006-10-23 2007-10-11 Low temperature aerosol deposition of a plasma resistive layer TWI368937B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/552,013 US7479464B2 (en) 2006-10-23 2006-10-23 Low temperature aerosol deposition of a plasma resistive layer

Publications (2)

Publication Number Publication Date
TW200820325A TW200820325A (en) 2008-05-01
TWI368937B true TWI368937B (en) 2012-07-21

Family

ID=38896988

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096138024A TWI368937B (en) 2006-10-23 2007-10-11 Low temperature aerosol deposition of a plasma resistive layer

Country Status (6)

Country Link
US (1) US7479464B2 (zh)
EP (1) EP1918420A1 (zh)
JP (1) JP5660748B2 (zh)
KR (1) KR100938474B1 (zh)
CN (1) CN101168842B (zh)
TW (1) TWI368937B (zh)

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TWI656572B (zh) * 2013-07-20 2019-04-11 應用材料股份有限公司 用於腔室蓋與噴嘴上之稀土氧化物系塗層的離子輔助沉積

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KR101108692B1 (ko) * 2010-09-06 2012-01-25 한국기계연구원 다공성 세라믹 표면을 밀봉하는 치밀한 희토류 금속 산화물 코팅막 및 이의 제조방법
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US9440886B2 (en) 2013-11-12 2016-09-13 Applied Materials, Inc. Rare-earth oxide based monolithic chamber material
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
US10982331B2 (en) 2014-01-17 2021-04-20 Iones Co., Ltd. Method for forming ceramic coating having improved plasma resistance and ceramic coating formed thereby
JP2015140484A (ja) 2014-01-30 2015-08-03 セイコーエプソン株式会社 時計用外装部品、時計用外装部品の製造方法および時計
US9976211B2 (en) 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
US9869013B2 (en) 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US10730798B2 (en) 2014-05-07 2020-08-04 Applied Materials, Inc. Slurry plasma spray of plasma resistant ceramic coating
US10196728B2 (en) 2014-05-16 2019-02-05 Applied Materials, Inc. Plasma spray coating design using phase and stress control
US9460898B2 (en) 2014-08-08 2016-10-04 Applied Materials, Inc. Plasma generation chamber with smooth plasma resistant coating
CN105986245A (zh) * 2015-02-16 2016-10-05 中微半导体设备(上海)有限公司 改善mocvd反应工艺的部件及改善方法
US10975469B2 (en) * 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
TWI733815B (zh) * 2017-05-25 2021-07-21 南韓商Ｋｏｍｉｃｏ有限公司 耐電漿塗層的氣膠沉積塗佈法
KR102089949B1 (ko) * 2017-10-20 2020-03-19 세메스 주식회사 기판 처리 장치 및 기판 처리 장치의 부품
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KR102616691B1 (ko) * 2019-02-12 2023-12-20 어플라이드 머티어리얼스, 인코포레이티드 챔버 부품들을 제조하기 위한 방법
JP2022522752A (ja) * 2019-03-05 2022-04-20 ラム リサーチ コーポレーション プラズマ処理チャンバ用アルミニウム構成部品のための積層エアロゾル堆積被膜
US20230088848A1 (en) * 2020-01-23 2023-03-23 Lam Research Corporation Yttrium aluminum coating for plasma processing chamber components
JP7115582B2 (ja) * 2020-04-30 2022-08-09 Toto株式会社 複合構造物および複合構造物を備えた半導体製造装置
TWI778587B (zh) * 2020-04-30 2022-09-21 日商Ｔｏｔｏ股份有限公司 複合結構物及具備複合結構物之半導體製造裝置
WO2023042977A1 (ko) * 2021-09-17 2023-03-23 아이원스 주식회사 플라즈마 분말 증착 장치 및 그를 이용한 증착 방법
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Publication number Priority date Publication date Assignee Title
TWI656572B (zh) * 2013-07-20 2019-04-11 應用材料股份有限公司 用於腔室蓋與噴嘴上之稀土氧化物系塗層的離子輔助沉積

Also Published As

Publication number Publication date
US7479464B2 (en) 2009-01-20
KR100938474B1 (ko) 2010-01-25
TW200820325A (en) 2008-05-01
US20080108225A1 (en) 2008-05-08
EP1918420A1 (en) 2008-05-07
KR20080036530A (ko) 2008-04-28
JP5660748B2 (ja) 2015-01-28
JP2008106363A (ja) 2008-05-08
CN101168842A (zh) 2008-04-30
CN101168842B (zh) 2010-08-25

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