JP2022522752A - プラズマ処理チャンバ用アルミニウム構成部品のための積層エアロゾル堆積被膜 - Google Patents
プラズマ処理チャンバ用アルミニウム構成部品のための積層エアロゾル堆積被膜 Download PDFInfo
- Publication number
- JP2022522752A JP2022522752A JP2021551543A JP2021551543A JP2022522752A JP 2022522752 A JP2022522752 A JP 2022522752A JP 2021551543 A JP2021551543 A JP 2021551543A JP 2021551543 A JP2021551543 A JP 2021551543A JP 2022522752 A JP2022522752 A JP 2022522752A
- Authority
- JP
- Japan
- Prior art keywords
- yttrium
- aluminum oxide
- plasma processing
- aluminum
- aerosol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000443 aerosol Substances 0.000 title claims abstract description 63
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 29
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 37
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims description 32
- 238000000576 coating method Methods 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 9
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 claims description 4
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 claims description 4
- CHBIYWIUHAZZNR-UHFFFAOYSA-N [Y].FOF Chemical compound [Y].FOF CHBIYWIUHAZZNR-UHFFFAOYSA-N 0.000 claims description 3
- 229940105963 yttrium fluoride Drugs 0.000 claims description 2
- 238000010586 diagram Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- PSNPEOOEWZZFPJ-UHFFFAOYSA-N alumane;yttrium Chemical compound [AlH3].[Y] PSNPEOOEWZZFPJ-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 244000245420 ail Species 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 235000004611 garlic Nutrition 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/02—Coating starting from inorganic powder by application of pressure only
- C23C24/04—Impact or kinetic deposition of particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
本願は、全ての目的のために参照により本明細書に援用される、2019年3月5日出願の米国出願第62/814,022号の優先権の利益を主張する。
Claims (23)
- プラズマ処理チャンバでの使用に適合する装置であって、
少なくとも1つの面を有するアルミニウム本体と、
前記アルミニウム本体の前記少なくとも1つの面に堆積された酸化アルミニウム含有エアロゾル堆積被膜と、
前記酸化アルミニウム含有エアロゾル堆積被膜に堆積されたイットリウム含有エアロゾル堆積被膜と、
を備える、装置。 - 請求項1に記載の装置であって、
前記イットリウム含有エアロゾル堆積被膜は、イットリアを含む、装置。 - 請求項1に記載の装置であって、
前記イットリウム含有エアロゾル堆積被膜は、1~20ミクロンの範囲の厚さを有する、装置。 - 請求項3に記載の装置であって、
前記酸化アルミニウム含有エアロゾル堆積被膜は、1~20ミクロンの範囲の厚さを有する、装置。 - 請求項1に記載の装置であって、
前記イットリウム含有エアロゾル堆積被膜は、イットリア、オキシフッ化イットリウム、酸化イットリウムアルミニウム、イットリア安定化ジルコニア、およびフッ化イットリウム(III)のうちの1つ以上を含む、装置。 - 請求項1に記載の装置であって、
前記装置は、閉じ込めリング、エッジリング、ピナクル、静電チャック、電極、接地リング、チャンバライナ、およびドアライナのうちの少なくとも1つである、装置。 - 請求項1に記載の装置であって、
前記アルミニウム本体の前記少なくとも1つの面は、16Ra(マイクロインチ)(0.0004064ミリメートル)未満の表面粗さを有する、装置。 - 請求項1に記載の装置であって、
前記アルミニウム本体は、少なくとも95重量%の純アルミニウムである、装置。 - 請求項1に記載の装置であって、
前記酸化アルミニウム含有エアロゾル堆積被膜は、酸化アルミニウムアエロゾル堆積被膜である、装置。 - 請求項1に記載の装置であって、
前記酸化アルミニウム含有エアロゾル堆積被膜は、前記イットリウム含有エアロゾル堆積被膜のための密着性を提供するためにアンカ層として機能する、装置。 - 請求項1に記載の装置であって、
前記酸化アルミニウム含有エアロゾル堆積被膜は、湿式化学物質から保護する拡散バリアとして機能する、装置。 - プラズマ処理チャンバ構成部品本体を被覆するための方法であって、
前記プラズマ処理チャンバ構成部品本体の少なくとも1つの面に酸化アルミニウム含有被膜をエアロゾル堆積する工程と、
前記酸化アルミニウム含有被膜にイットリウム含有被膜をエアロゾル堆積する工程と、
を含む、方法。 - 請求項12に記載の方法であって、さらに、
前記酸化アルミニウム含有被膜をエアロゾル堆積する前に、前記プラズマ処理チャンバ構成部品本体の前記少なくとも1つの面を研磨する工程を含む、方法。 - 請求項12に記載の方法であって、
前記イットリウム含有被膜は、イットリアを含む、方法。 - 請求項12に記載の方法であって、
前記イットリウム含有被膜は、1~20ミクロンの範囲の厚さを有する、方法。 - 請求項15に記載の方法であって、
前記酸化アルミニウム含有被膜は、1~20ミクロンの範囲の厚さを有する、方法。 - 請求項12に記載の方法であって、
前記イットリウム含有被膜は、イットリア、オキシフッ化イットリウム、酸化イットリウムアルミニウム、イットリア安定化ジルコニア、およびフッ化イットリウム(III)のうちの1つ以上を含む、方法。 - 請求項12に記載の方法であって、
前記プラズマ処理チャンバ構成部品本体は、閉じ込めリング、エッジリング、ピナクル、静電チャック、電極、接地リング、チャンバライナ、およびドアライナのうちの少なくとも1つである、方法。 - 請求項12に記載の方法であって、さらに、
前記酸化アルミニウム含有被膜をエアロゾル堆積する前に、16Ra(マイクロインチ)未満の表面粗さを有するように前記プラズマ処理チャンバ構成部品本体の前記少なくとも1つの面を研磨する工程を含む、方法。 - 請求項12に記載の方法であって、
前記プラズマ処理チャンバ構成部品本体は、少なくとも95重量%の純アルミニウムである、方法。 - 請求項12に記載の方法であって、
酸化アルミニウム含有被膜をエアロゾル堆積する前記工程は、酸化アルミニウム被膜を堆積する、方法。 - 請求項12に記載の方法であって、
前記酸化アルミニウム含有被膜は、前記イットリウム含有エアロゾル堆積被膜のための密着性を提供するためにアンカ層として機能する、方法。 - 請求項12に記載の方法であって、
前記酸化アルミニウム含有被膜は、湿式化学物質から保護する拡散バリアとして機能する、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962814022P | 2019-03-05 | 2019-03-05 | |
US62/814,022 | 2019-03-05 | ||
PCT/US2020/020757 WO2020180853A1 (en) | 2019-03-05 | 2020-03-03 | Laminated aerosol deposition coating for aluminum components for plasma processing chambers |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2022522752A true JP2022522752A (ja) | 2022-04-20 |
Family
ID=72338090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021551543A Pending JP2022522752A (ja) | 2019-03-05 | 2020-03-03 | プラズマ処理チャンバ用アルミニウム構成部品のための積層エアロゾル堆積被膜 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220115214A1 (ja) |
JP (1) | JP2022522752A (ja) |
KR (1) | KR20210125103A (ja) |
TW (1) | TW202045766A (ja) |
WO (1) | WO2020180853A1 (ja) |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7371467B2 (en) * | 2002-01-08 | 2008-05-13 | Applied Materials, Inc. | Process chamber component having electroplated yttrium containing coating |
US6776873B1 (en) * | 2002-02-14 | 2004-08-17 | Jennifer Y Sun | Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers |
US8067067B2 (en) * | 2002-02-14 | 2011-11-29 | Applied Materials, Inc. | Clean, dense yttrium oxide coating protecting semiconductor processing apparatus |
US7311797B2 (en) * | 2002-06-27 | 2007-12-25 | Lam Research Corporation | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor |
US20050112289A1 (en) * | 2003-03-03 | 2005-05-26 | Trickett Douglas M. | Method for coating internal surface of plasma processing chamber |
JP4808374B2 (ja) * | 2003-11-13 | 2011-11-02 | 富士通株式会社 | 金属成形品の表面処理方法 |
WO2006135043A1 (ja) * | 2005-06-17 | 2006-12-21 | Tohoku University | 金属部材の保護膜構造及び保護膜構造を用いた金属部品並びに保護膜構造を用いた半導体又は平板ディスプレイ製造装置 |
KR101344990B1 (ko) * | 2006-04-20 | 2013-12-24 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 도전성 내플라즈마 부재 |
US7479464B2 (en) * | 2006-10-23 | 2009-01-20 | Applied Materials, Inc. | Low temperature aerosol deposition of a plasma resistive layer |
US8114473B2 (en) * | 2007-04-27 | 2012-02-14 | Toto Ltd. | Composite structure and production method thereof |
US20110206833A1 (en) * | 2010-02-22 | 2011-08-25 | Lam Research Corporation | Extension electrode of plasma bevel etching apparatus and method of manufacture thereof |
US9343289B2 (en) * | 2012-07-27 | 2016-05-17 | Applied Materials, Inc. | Chemistry compatible coating material for advanced device on-wafer particle performance |
US9916998B2 (en) * | 2012-12-04 | 2018-03-13 | Applied Materials, Inc. | Substrate support assembly having a plasma resistant protective layer |
US9708713B2 (en) * | 2013-05-24 | 2017-07-18 | Applied Materials, Inc. | Aerosol deposition coating for semiconductor chamber components |
US9790582B2 (en) * | 2015-04-27 | 2017-10-17 | Lam Research Corporation | Long lifetime thermal spray coating for etching or deposition chamber application |
KR101817779B1 (ko) * | 2015-12-31 | 2018-01-11 | (주)코미코 | 내플라즈마 코팅막 및 이의 형성방법 |
US10755900B2 (en) * | 2017-05-10 | 2020-08-25 | Applied Materials, Inc. | Multi-layer plasma erosion protection for chamber components |
-
2020
- 2020-03-03 WO PCT/US2020/020757 patent/WO2020180853A1/en active Application Filing
- 2020-03-03 US US17/432,003 patent/US20220115214A1/en active Pending
- 2020-03-03 KR KR1020217031590A patent/KR20210125103A/ko unknown
- 2020-03-03 JP JP2021551543A patent/JP2022522752A/ja active Pending
- 2020-03-05 TW TW109107171A patent/TW202045766A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20210125103A (ko) | 2021-10-15 |
TW202045766A (zh) | 2020-12-16 |
US20220115214A1 (en) | 2022-04-14 |
WO2020180853A1 (en) | 2020-09-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6820359B2 (ja) | プラズマ耐食性希土類酸化物系薄膜コーティング | |
CN105474363B (zh) | 抗等离子体的陶瓷涂层的浆料等离子体喷涂 | |
KR101832436B1 (ko) | 플라즈마 처리 장치용의 부품 및 부품의 제조 방법 | |
CN110194681B (zh) | 制造制品的方法 | |
TWI624869B (zh) | 使用電漿火焰熱處理之電漿噴塗增進 | |
KR102410645B1 (ko) | 상 및 응력 조절을 이용한 플라즈마 스프레이 설계 | |
JP6278584B2 (ja) | プラズマチャンバ部品用耐プラズマコーティング | |
JP2017034257A (ja) | プラズマエッチング耐性コーティングを有するプラズマエッチングデバイス | |
CN101065510A (zh) | 具有层化涂覆的制程室组件及方法 | |
JP2022522752A (ja) | プラズマ処理チャンバ用アルミニウム構成部品のための積層エアロゾル堆積被膜 | |
US20230223240A1 (en) | Matched chemistry component body and coating for semiconductor processing chamber | |
TW202147381A (zh) | 用於電漿處理腔室部件的覆層 | |
US20230088848A1 (en) | Yttrium aluminum coating for plasma processing chamber components | |
TW202102720A (zh) | 用於鋁電漿處理腔室元件的表面塗層 | |
WO2024063892A1 (en) | Pyrochlore component for plasma processing chamber | |
WO2023229892A1 (en) | Yttria coating for plasma processing chamber components | |
TW202322178A (zh) | 用於半導體處理腔室組件的釔鋁鈣鈦礦(yap)基塗層 | |
TW202322293A (zh) | 經處理陶瓷腔室部件 | |
TW202212608A (zh) | 用於處理腔室元件的原子層沉積被覆粉末覆層 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230130 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20240118 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240123 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20240417 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240516 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20240806 |