JP5656049B2 - 薄膜トランジスタの製造方法 - Google Patents
薄膜トランジスタの製造方法 Download PDFInfo
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- JP5656049B2 JP5656049B2 JP2010120176A JP2010120176A JP5656049B2 JP 5656049 B2 JP5656049 B2 JP 5656049B2 JP 2010120176 A JP2010120176 A JP 2010120176A JP 2010120176 A JP2010120176 A JP 2010120176A JP 5656049 B2 JP5656049 B2 JP 5656049B2
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- organic semiconductor
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- electrode
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- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000323 polyazulene Polymers 0.000 description 1
- 229920001088 polycarbazole Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920000015 polydiacetylene Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000414 polyfuran Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Substances [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- RIQXSPGGOGYAPV-UHFFFAOYSA-N tetrabenzo(a,c,l,o)pentacene Chemical compound C1=CC=CC2=C(C=C3C(C=C4C=C5C6=CC=CC=C6C=6C(C5=CC4=C3)=CC=CC=6)=C3)C3=C(C=CC=C3)C3=C21 RIQXSPGGOGYAPV-UHFFFAOYSA-N 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- FHCPAXDKURNIOZ-UHFFFAOYSA-N tetrathiafulvalene Chemical compound S1C=CSC1=C1SC=CS1 FHCPAXDKURNIOZ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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Description
1.薄膜トランジスタ
1−1.薄膜トランジスタの構成
1−2.薄膜トランジスタの製造方法
2.薄膜トランジスタの適用例(電子機器)
<1−1.薄膜トランジスタの構成>
図1は、一実施形態の薄膜トランジスタである有機TFTの断面構成を表している。
次に、上記した有機TFTの製造方法について説明する。図2は、有機TFTを製造するために用いられるレーザ加工装置の構成を表している。図3〜図8は、有機TFTの製造方法を説明するためのものであり、いずれも図1に対応する断面構成を示している。なお、有機TFTの構成要素の形成材料については既に説明したので、以下では、その形成材料に関する説明を随時省略する。
レーザ加工装置は、レーザアブレーション法による加工(パターニング)に用いられるものである。このレーザ加工装置は、例えば、図2に示したように、光源11と、その光源11から出射されるレーザ光Lを所定のパターン形状として光学的に投影する光学系12と、デブリ回収機構13と、ステージ14とを備えている。なお、デブリ回収機構13には、レーザ光Lの入射側に透過窓19が設けられていると共に、排気ポンプ20およびガス導入手段21,22が接続されている。
有機TFTを製造する場合には、最初に、図3に示したように、支持基体1を準備したのち、その支持基体1の上にゲート電極2をパターン形成する。
上記した有機TFTおよびその製造方法では、レーザアブレーション法により有機半導体層7をパターニングして有機半導体パターン4を形成したのち、その有機半導体パターン4の上にソース電極5およびドレイン電極6を形成している。すなわち、レーザアブレーション法を用いて、トップコンタクト型の有機TFTを製造している。この場合には、以下の利点が得られる。
なお、レーザアブレーション法により有機半導体層7をパターニングする場合(図3)には、例えば、図9に示したように、レーザアブレーション法により有機半導体パターン4をマスクとしてゲート絶縁層3を選択的に途中まで掘り下げてもよい。こののち、ソース電極5およびドレイン電極6を形成すれば、図10に示した有機TFTが製造される。この場合においても、有機TFTの高性能化および製造容易化を実現できる。また、有機半導体パターン4の側面にソース電極4およびドレイン電極5がより接触しやすくなるため、両者の電気的導通性より向上させることができる。ただし、ゲート絶縁層3が補助容量における絶縁層としての役割を兼ねている場合には、リーク電流を抑制するために、ゲート絶縁層3の厚さ(ゲート電極2が形成されていない領域におけるゲート絶縁層3の厚さ)を200nm以上にすることが好ましい。
次に、上記した有機TFTの適用例について説明する。有機TFTは、さまざまな電子機器に適用可能であり、その電子機器の種類は特に限定されないが、例えば、表示装置である液晶表示装置に適用される。
ここで説明する液晶表示装置は、例えば、有機TFTを用いたアクティブマトリクス型駆動方式の透過型液晶ディスプレイであり、その有機TFTは、スイッチング(画素選択)用の素子として用いられる。この液晶表示装置は、図11に示したように、駆動基板30と対向基板40との間に液晶層51が封入されたものである。なお、液晶表示装置は、透過型でも反射型でもよい。
この液晶表示装置では、有機TFT32により画素電極34が選択され、その画素電極34と対向電極42との間に電界が印加されると、その電界強度に応じて液晶層51(液晶分子)の配向状態が変化する。これにより、液晶分子の配向状態に応じて光の透過量(透過率)が制御されるため、階調画像が表示される。
この液晶表示装置によれば、有機TFT32が上記した有機TFTと同様の構成を有しているので、低抵抗であるトップコンタクト型の有機TFT32が容易かつ安定に製造される。よって、電子機器の高性能化および製造容易化を実現できる。
以下の手順により、ボトムゲート・トップコンタクト型の有機TFTを作製した。
素子分離の方法としてフォトリソグラフィ法およびドライエッチング法を用いたことを除き、実験例1と同様の手順により有機TFTを作製した。
素子分離を行わなかったことを除き、実験例1と同様の手順により有機TFTを作製した。この場合には、有機半導体パターンを形成せずに、有機半導体層の上にソース電極およびドレイン電極を形成した。
Claims (2)
- 支持基体の上に、ゲート電極を形成する工程と、
前記ゲート電極の上に、ゲート絶縁層を形成する工程と、
前記ゲート絶縁層の上に、有機半導体層を形成する工程と、
レーザアブレーション法により前記有機半導体層を選択的に除去して有機半導体パターンを形成する工程と、
前記有機半導体パターンの上に、ソース電極およびドレイン電極を形成する工程と
を含み、
前記有機半導体パターンを形成する工程において、前記ゲート絶縁層に近づくにしたがって前記有機半導体パターンの幅を次第に広くすると共に、その有機半導体パターンをマスクとして前記ゲート絶縁層を選択的に途中まで掘り下げる、
薄膜トランジスタの製造方法。 - 前記ソース電極および前記ドレイン電極を形成する工程において、前記有機半導体パターンの上に電極層を形成したのち、ウェットエッチング法により前記電極層を選択的に除去する、
請求項1記載の薄膜トランジスタの製造方法。
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WO2013036988A1 (en) * | 2011-09-13 | 2013-03-21 | Hear Ip Pty Ltd | Biocompatible electrode component and method for fabrication thereof |
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JP2013229453A (ja) * | 2012-04-26 | 2013-11-07 | Sony Corp | 半導体装置、表示装置及び半導体装置の製造方法 |
JP2015019000A (ja) | 2013-07-12 | 2015-01-29 | ソニー株式会社 | 電子デバイス及びその製造方法、並びに、画像表示装置及び画像表示装置を構成する基板 |
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- 2011-05-12 US US13/106,278 patent/US8546197B2/en active Active
- 2011-05-16 KR KR1020110045570A patent/KR20110129815A/ko not_active Application Discontinuation
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JP2011249498A (ja) | 2011-12-08 |
KR20110129815A (ko) | 2011-12-02 |
US20110297938A1 (en) | 2011-12-08 |
TW201214713A (en) | 2012-04-01 |
US8546197B2 (en) | 2013-10-01 |
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