JP6583808B2 - 有機半導体膜の製造方法および製造装置 - Google Patents
有機半導体膜の製造方法および製造装置 Download PDFInfo
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- JP6583808B2 JP6583808B2 JP2015031980A JP2015031980A JP6583808B2 JP 6583808 B2 JP6583808 B2 JP 6583808B2 JP 2015031980 A JP2015031980 A JP 2015031980A JP 2015031980 A JP2015031980 A JP 2015031980A JP 6583808 B2 JP6583808 B2 JP 6583808B2
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- 239000004065 semiconductor Substances 0.000 title claims description 67
- 238000004519 manufacturing process Methods 0.000 title claims description 32
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- 239000002608 ionic liquid Substances 0.000 claims description 37
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- 238000005530 etching Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 description 63
- 239000000463 material Substances 0.000 description 22
- 238000002502 frequency-modulation atomic force microscopy Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 14
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 8
- -1 Cations Imidazolium cations Chemical class 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 150000001450 anions Chemical class 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- PXELHGDYRQLRQO-UHFFFAOYSA-N 1-butyl-1-methylpyrrolidin-1-ium Chemical compound CCCC[N+]1(C)CCCC1 PXELHGDYRQLRQO-UHFFFAOYSA-N 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- IQQRAVYLUAZUGX-UHFFFAOYSA-N 1-butyl-3-methylimidazolium Chemical compound CCCCN1C=C[N+](C)=C1 IQQRAVYLUAZUGX-UHFFFAOYSA-N 0.000 description 2
- NJMWOUFKYKNWDW-UHFFFAOYSA-N 1-ethyl-3-methylimidazolium Chemical compound CCN1C=C[N+](C)=C1 NJMWOUFKYKNWDW-UHFFFAOYSA-N 0.000 description 2
- RVEJOWGVUQQIIZ-UHFFFAOYSA-N 1-hexyl-3-methylimidazolium Chemical compound CCCCCCN1C=C[N+](C)=C1 RVEJOWGVUQQIIZ-UHFFFAOYSA-N 0.000 description 2
- LSFWFJFDPRFPBK-UHFFFAOYSA-N 1-methyl-3-pentylimidazol-1-ium Chemical compound CCCCCN1C=C[N+](C)=C1 LSFWFJFDPRFPBK-UHFFFAOYSA-N 0.000 description 2
- WVDDUSFOSWWJJH-UHFFFAOYSA-N 1-methyl-3-propylimidazol-1-ium Chemical compound CCCN1C=C[N+](C)=C1 WVDDUSFOSWWJJH-UHFFFAOYSA-N 0.000 description 2
- GSBKRFGXEJLVMI-UHFFFAOYSA-N Nervonyl carnitine Chemical compound CCC[N+](C)(C)C GSBKRFGXEJLVMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- SLSPYQCCSCAKIB-UHFFFAOYSA-N bis(1,1,2,2,2-pentafluoroethylsulfonyl)azanide Chemical compound FC(F)(F)C(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)C(F)(F)F SLSPYQCCSCAKIB-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001473 dynamic force microscopy Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- HTKPDYSCAPSXIR-UHFFFAOYSA-N octyltrimethylammonium ion Chemical compound CCCCCCCC[N+](C)(C)C HTKPDYSCAPSXIR-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 2
- ACZOGADOAZWANS-UHFFFAOYSA-N trimethyl(pentyl)azanium Chemical compound CCCCC[N+](C)(C)C ACZOGADOAZWANS-UHFFFAOYSA-N 0.000 description 2
- ZXMGHDIOOHOAAE-UHFFFAOYSA-N 1,1,1-trifluoro-n-(trifluoromethylsulfonyl)methanesulfonamide Chemical compound FC(F)(F)S(=O)(=O)NS(=O)(=O)C(F)(F)F ZXMGHDIOOHOAAE-UHFFFAOYSA-N 0.000 description 1
- MXLZUALXSYVAIV-UHFFFAOYSA-N 1,2-dimethyl-3-propylimidazol-1-ium Chemical compound CCCN1C=C[N+](C)=C1C MXLZUALXSYVAIV-UHFFFAOYSA-N 0.000 description 1
- MOBFBESVVHOHDW-UHFFFAOYSA-N 1,3,5-trimethyl-2-propylpyrazol-1-ium Chemical compound CCC[N+]1=C(C)C=C(C)N1C MOBFBESVVHOHDW-UHFFFAOYSA-N 0.000 description 1
- HVVRUQBMAZRKPJ-UHFFFAOYSA-N 1,3-dimethylimidazolium Chemical compound CN1C=C[N+](C)=C1 HVVRUQBMAZRKPJ-UHFFFAOYSA-N 0.000 description 1
- GXNZJXAATBWYOL-UHFFFAOYSA-N 1-butyl-2,3,5-trimethylpyrazol-2-ium Chemical compound CCCC[N+]1=C(C)C=C(C)N1C GXNZJXAATBWYOL-UHFFFAOYSA-N 0.000 description 1
- XJBALIUUDWYQES-UHFFFAOYSA-N 1-ethyl-2,3,5-trimethylpyrazol-2-ium Chemical compound CC[N+]1=C(C)C=C(C)N1C XJBALIUUDWYQES-UHFFFAOYSA-N 0.000 description 1
- CPRWXISTVQJDTC-UHFFFAOYSA-N 1-hexyl-2,3,5-trimethylpyrazol-2-ium Chemical compound CCCCCC[N+]1=C(C)C=C(C)N1C CPRWXISTVQJDTC-UHFFFAOYSA-N 0.000 description 1
- YQFWGCSKGJMGHE-UHFFFAOYSA-N 1-methyl-1-propylpyrrolidin-1-ium Chemical compound CCC[N+]1(C)CCCC1 YQFWGCSKGJMGHE-UHFFFAOYSA-N 0.000 description 1
- ZYRXXCQGMOUOOG-UHFFFAOYSA-N 1-methyl-3-oxidoimidazol-3-ium Chemical compound CN1C=C[N+]([O-])=C1 ZYRXXCQGMOUOOG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 240000006829 Ficus sundaica Species 0.000 description 1
- IUNCEDRRUNZACO-UHFFFAOYSA-N butyl(trimethyl)azanium Chemical compound CCCC[N+](C)(C)C IUNCEDRRUNZACO-UHFFFAOYSA-N 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- XTPRURKTXNFVQT-UHFFFAOYSA-N hexyl(trimethyl)azanium Chemical compound CCCCCC[N+](C)(C)C XTPRURKTXNFVQT-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- KTQDYGVEEFGIIL-UHFFFAOYSA-N n-fluorosulfonylsulfamoyl fluoride Chemical compound FS(=O)(=O)NS(F)(=O)=O KTQDYGVEEFGIIL-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Description
イミダゾリウム系陽イオン: 1-methyl-3-methylimidazolium(MMI),1-ethyl-3-methylimidazolium(EMI),1-propyl-3-methylimidazolium(PMI),1-butyl-3-methylimidazolium(BMI),1-pentyl-3-methylimidazolium(PeMI),1-hexyl-3-methylimidazolium(HMI),1-oxyl-3-methylimidazolium(OMI),1,2-dimethyl-3-propylimidazolium(DMPI);
ピリジニウム系陽イオン:1-methly-1-propylpiperridinium(PP13),1-methyl-1-propylpyrrolidinium(P13),1-methyl-1-butylpyrrolidinium(P14),1-butyl-1-methylpyrrolidinium(BMP);
アンモニウム系陽イオン:trimethyl propyl ammonium(TMPA),trimethyl octyl ammonium(TMOA)、trimethyl hexyl ammonium(TMHA),trimethyl pentyl ammonium(TMPeA),trimethyl butyl ammonium(TMBA);
ピラゾリウム系陽イオン: 1-ethyl-2,3,5-trimethylpyrazolium(ETMP),1-butyl-2,3,5-trimethylpyrazolium(BTMP),1-propyl-2,3,5-trimethylpyrazolium(PTMP),1-hexyl-2,3,5-trimethylpyrazolium(HTMP);
bis(trifluoromethanesulfonyl)imide(TFSI),bis(fluorosulfonyl)imide(FSI),bis(per
fluoroethylsulfonyl)imide(BETI),tetrafluoroborate(BF4),hexafluorophosphate(PF6
);
本発明は上記実施形態に限定されるものではなく、本発明の趣旨の範囲内で適宜変更することが可能である。
16 有機半導体膜
18 イオン液体
19 製造装置
Claims (6)
- 有機半導体膜をイオン液体に浸漬して被加工面をエッチングする工程を備える有機半導体膜の製造方法において、
前記イオン液体中で前記被加工面に電圧を印加する工程を含むことを特徴とする有機半導体膜の製造方法。 - 前記電圧を印加する工程において、前記被加工面上を探針が移動することにより前記被加工面を所定形状にエッチングすることを特徴とする請求項1記載の有機半導体膜の製造方法。
- 前記探針は、振動しながら前記被加工面上を移動することを特徴とする請求項2記載の有機半導体膜の製造方法。
- 前記被加工面を単原子層ずつエッチングし、結晶性に優れた表面を得ることを特徴とする請求項1〜3のいずれか1項記載の有機半導体膜の製造方法。
- 有機半導体膜をエッチングする製造装置において、イオン液体中で被加工面に電圧を印加することを特徴とする製造装置。
- 前記被加工面に電圧を印加する電極を備えていることを特徴とする請求項5記載の製造装置。
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JP6583808B2 true JP6583808B2 (ja) | 2019-10-02 |
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WO2023228702A1 (ja) * | 2022-05-26 | 2023-11-30 | 克弥 西沢 | 導線、伝送装置、宇宙太陽光エネルギー輸送方法 |
JP7157892B1 (ja) | 2022-08-02 | 2022-10-20 | 克弥 西沢 | 導体素子、トランジスタ、導線、電池電極、電池 |
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JPH0897183A (ja) * | 1994-09-28 | 1996-04-12 | Nippon Steel Corp | 半導体装置の微細加工方法 |
JP5656049B2 (ja) * | 2010-05-26 | 2015-01-21 | ソニー株式会社 | 薄膜トランジスタの製造方法 |
WO2013182631A1 (en) * | 2012-06-08 | 2013-12-12 | Onderzoekscentrum Voor Aanwending Van Staal N.V. | Method for producing a metal coating |
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