JP5608605B2 - 配線基板の製造方法 - Google Patents
配線基板の製造方法 Download PDFInfo
- Publication number
- JP5608605B2 JP5608605B2 JP2011117724A JP2011117724A JP5608605B2 JP 5608605 B2 JP5608605 B2 JP 5608605B2 JP 2011117724 A JP2011117724 A JP 2011117724A JP 2011117724 A JP2011117724 A JP 2011117724A JP 5608605 B2 JP5608605 B2 JP 5608605B2
- Authority
- JP
- Japan
- Prior art keywords
- hole
- layer
- substrate
- wiring board
- seed layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 120
- 229910052710 silicon Inorganic materials 0.000 claims description 120
- 239000010703 silicon Substances 0.000 claims description 120
- 239000011347 resin Substances 0.000 claims description 71
- 229920005989 resin Polymers 0.000 claims description 71
- 238000000034 method Methods 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 60
- 238000007747 plating Methods 0.000 claims description 46
- 230000001681 protective effect Effects 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 238000009713 electroplating Methods 0.000 claims description 17
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 238000011049 filling Methods 0.000 claims description 11
- 239000011651 chromium Substances 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- 239000005011 phenolic resin Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 218
- 239000010408 film Substances 0.000 description 34
- 239000010949 copper Substances 0.000 description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 24
- 229910052802 copper Inorganic materials 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011117724A JP5608605B2 (ja) | 2010-11-05 | 2011-05-26 | 配線基板の製造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010248328 | 2010-11-05 | ||
JP2010248328 | 2010-11-05 | ||
JP2011117724A JP5608605B2 (ja) | 2010-11-05 | 2011-05-26 | 配線基板の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012114400A JP2012114400A (ja) | 2012-06-14 |
JP2012114400A5 JP2012114400A5 (ru) | 2014-04-10 |
JP5608605B2 true JP5608605B2 (ja) | 2014-10-15 |
Family
ID=46498251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011117724A Expired - Fee Related JP5608605B2 (ja) | 2010-11-05 | 2011-05-26 | 配線基板の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5608605B2 (ru) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US12087679B2 (en) | 2019-11-27 | 2024-09-10 | Applied Materials, Inc. | Package core assembly and fabrication methods |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014069662A1 (ja) * | 2012-11-05 | 2014-05-08 | 大日本印刷株式会社 | 配線構造体 |
JP2014236102A (ja) * | 2013-05-31 | 2014-12-15 | 凸版印刷株式会社 | 貫通電極付き配線基板、その製造方法及び半導体装置 |
KR20150049515A (ko) * | 2013-10-30 | 2015-05-08 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조 방법 |
TWI670803B (zh) * | 2014-03-31 | 2019-09-01 | 日商凸版印刷股份有限公司 | 中介層、半導體裝置、中介層的製造方法及半導體裝置的製造方法 |
JP2015198093A (ja) * | 2014-03-31 | 2015-11-09 | 凸版印刷株式会社 | インターポーザー、半導体装置、インターポーザーの製造方法、半導体装置の製造方法 |
JP6539992B2 (ja) * | 2014-11-14 | 2019-07-10 | 凸版印刷株式会社 | 配線回路基板、半導体装置、配線回路基板の製造方法、半導体装置の製造方法 |
CN105657987B (zh) * | 2014-12-03 | 2019-05-21 | 北大方正集团有限公司 | 板材塞孔方法和电路板 |
JP2017107934A (ja) * | 2015-12-08 | 2017-06-15 | 富士通株式会社 | 回路基板、電子機器、及び回路基板の製造方法 |
KR102039887B1 (ko) * | 2017-12-13 | 2019-12-05 | 엘비세미콘 주식회사 | 양면 도금 공정을 이용한 반도체 패키지의 제조방법 |
JP6828733B2 (ja) * | 2018-12-25 | 2021-02-10 | 凸版印刷株式会社 | インターポーザー、半導体装置、インターポーザーの製造方法、半導体装置の製造方法 |
KR102442256B1 (ko) * | 2020-11-05 | 2022-09-08 | 성균관대학교산학협력단 | 보이드가 없는 실리콘 관통전극의 제조방법 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63232487A (ja) * | 1987-03-20 | 1988-09-28 | 日本電気株式会社 | 印刷配線板の製造方法 |
JPH0423488A (ja) * | 1990-05-18 | 1992-01-27 | Hitachi Ltd | プリント基板の製造方法 |
JPH06260757A (ja) * | 1993-03-05 | 1994-09-16 | Meikoo:Kk | プリント回路板の製造方法 |
JP2006237431A (ja) * | 2005-02-28 | 2006-09-07 | New Japan Radio Co Ltd | セラミック基板の製造方法 |
JP2007095743A (ja) * | 2005-09-27 | 2007-04-12 | Matsushita Electric Works Ltd | 貫通孔配線及びその製造方法 |
-
2011
- 2011-05-26 JP JP2011117724A patent/JP5608605B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US12087679B2 (en) | 2019-11-27 | 2024-09-10 | Applied Materials, Inc. | Package core assembly and fabrication methods |
Also Published As
Publication number | Publication date |
---|---|
JP2012114400A (ja) | 2012-06-14 |
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