JP5600625B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5600625B2 JP5600625B2 JP2011065232A JP2011065232A JP5600625B2 JP 5600625 B2 JP5600625 B2 JP 5600625B2 JP 2011065232 A JP2011065232 A JP 2011065232A JP 2011065232 A JP2011065232 A JP 2011065232A JP 5600625 B2 JP5600625 B2 JP 5600625B2
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- film
- oxide semiconductor
- semiconductor film
- oxide
- transistor
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- 229910001416 lithium ion Inorganic materials 0.000 description 1
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- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
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- 230000000750 progressive effect Effects 0.000 description 1
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- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Dram (AREA)
- Formation Of Insulating Films (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Description
本実施の形態では、半導体装置及び半導体装置の作製方法の一形態を、図1を用いて説明する。本実施の形態では、半導体装置の一例として酸化物半導体膜を有するトランジスタを示す。
条件(A)τiを非常に大きくする。
条件(B)V2をゼロに近づける、すなわち、G2をG1より非常に大きくする。
条件(C)C2をゼロに近づける。
条件(D)τ1をτ2に近づける。
本実施の形態では、半導体装置の作製方法の他の一形態を説明する。上記実施の形態と同一部分又は同様な機能を有する部分、及び工程は、上記実施の形態と同様に行うことができ、繰り返しの説明は省略する。また同じ箇所の詳細な説明は省略する。
実施の形態1または2のいずれかで一例を示したトランジスタを用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、トランジスタを含む駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
実施の形態1または2のいずれかで一例を示したトランジスタを用いて、対象物の情報を読み取るイメージセンサ機能を有する半導体装置を作製することができる。
本明細書に開示する液晶表示装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。上記実施の形態で説明した液晶表示装置を具備する電子機器の例について説明する。
401 ゲート電極
402 ゲート絶縁膜
403 酸化物半導体膜
405a ソース電極
405b ドレイン電極
407 金属酸化膜
410 トランジスタ
431 金属酸化膜
441 酸化物半導体膜
601 基板
602 フォトダイオード
606a 半導体層
606b 半導体層
606c 半導体層
608 接着層
613 基板
631 金属酸化膜
633 層間絶縁層
634 層間絶縁層
640 トランジスタ
641 電極層
642 電極層
643 導電層
644 電極層
645 ゲート電極
656 トランジスタ
658 フォトダイオードリセット信号線
659 ゲート信号線
671 フォトセンサ出力信号線
672 フォトセンサ基準信号線
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカー
2800 筐体
2801 筐体
2802 表示パネル
2803 スピーカー
2804 マイクロフォン
2805 操作キー
2806 ポインティングデバイス
2807 カメラ用レンズ
2808 外部接続端子
2810 太陽電池セル
2811 外部メモリスロット
3001 本体
3002 筐体
3003 表示部
3004 キーボード
3021 本体
3022 スタイラス
3023 表示部
3024 操作ボタン
3025 外部インターフェイス
3051 本体
3053 接眼部
3054 操作スイッチ
3055 表示部(B)
3056 バッテリー
3057 表示部(A)
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4018a FPC
4018b FPC
4019 異方性導電膜
4020 金属酸化膜
4021 絶縁層
4023 絶縁膜
4030 電極層
4031 電極層
4032 絶縁膜
4033 絶縁膜
4510 隔壁
4511 電界発光層
4513 発光素子
4514 充填材
4612 キャビティ
4613 球形粒子
4614 充填材
4615a 黒色領域
4615b 白色領域
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9630 筐体
9631 表示部
9632 操作キー
9633 太陽電池
9634 充放電制御回路
9635 バッテリー
9636 コンバータ
9637 コンバータ
Claims (3)
- ゲート電極と、
前記ゲート電極上の、ゲート絶縁膜と、
前記ゲート絶縁膜上の、前記ゲート電極と重畳する領域を有する酸化物半導体膜と、
前記酸化物半導体膜上の、ソース電極と、
前記酸化物半導体膜上の、ドレイン電極と、
前記酸化物半導体膜上の、金属酸化膜と、を有し、
前記酸化物半導体膜は、インジウムと、ガリウムと、亜鉛とを有し、
前記ソース電極は、前記酸化物半導体膜と接する領域を有し、
前記ドレイン電極は、前記酸化物半導体膜と接する領域を有し、
前記金属酸化膜は、前記酸化物半導体膜の誘電率よりも低い誘電率を有し、
前記金属酸化膜は、前記酸化物半導体膜の水素濃度と同じ水素濃度の領域を有し、
前記金属酸化膜は、前記酸化物半導体膜と接する領域を有し、
前記金属酸化膜は、前記ソース電極と接する領域を有し、
前記金属酸化膜は、前記ドレイン電極と接する領域を有することを特徴とする半導体装置。 - ゲート電極と、
前記ゲート電極上の、ゲート絶縁膜と、
前記ゲート絶縁膜上の、前記ゲート電極と重畳する領域を有する酸化物半導体膜と、
前記酸化物半導体膜上の、ソース電極と、
前記酸化物半導体膜上の、ドレイン電極と、
前記酸化物半導体膜上の、金属酸化膜と、を有し、
前記酸化物半導体膜は、インジウムと、ガリウムと、亜鉛とを有し、
前記金属酸化膜は、ガリウムを有し、
前記ソース電極は、前記酸化物半導体膜と接する領域を有し、
前記ドレイン電極は、前記酸化物半導体膜と接する領域を有し、
前記金属酸化膜は、前記酸化物半導体膜の誘電率よりも低い誘電率を有し、
前記金属酸化膜は、前記酸化物半導体膜の水素濃度と同じ水素濃度の領域を有し、
前記金属酸化膜は、前記酸化物半導体膜と接する領域を有し、
前記金属酸化膜は、前記ソース電極と接する領域を有し、
前記金属酸化膜は、前記ドレイン電極と接する領域を有することを特徴とする半導体装置。 - 請求項1又は請求項2において、
前記金属酸化膜は、前記酸化物半導体膜より厚い領域を有することを特徴とする半導体装置。
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JP2011065232A JP5600625B2 (ja) | 2010-03-26 | 2011-03-24 | 半導体装置 |
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JP2014077604A Division JP5798660B2 (ja) | 2010-03-26 | 2014-04-04 | 半導体装置 |
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JP2012163555A Active JP5190550B2 (ja) | 2010-03-26 | 2012-07-24 | 半導体装置 |
JP2014077604A Active JP5798660B2 (ja) | 2010-03-26 | 2014-04-04 | 半導体装置 |
JP2015163874A Withdrawn JP2016021580A (ja) | 2010-03-26 | 2015-08-21 | 半導体装置 |
JP2016199824A Expired - Fee Related JP6280968B2 (ja) | 2010-03-26 | 2016-10-11 | 半導体装置の作製方法 |
JP2017100499A Active JP6412206B2 (ja) | 2010-03-26 | 2017-05-22 | 半導体装置の作製方法 |
JP2018181832A Active JP6595067B2 (ja) | 2010-03-26 | 2018-09-27 | 表示装置の作製方法 |
JP2019174475A Active JP6861253B2 (ja) | 2010-03-26 | 2019-09-25 | 液晶表示装置 |
JP2021055631A Active JP7121824B2 (ja) | 2010-03-26 | 2021-03-29 | 半導体装置及び半導体装置の作製方法 |
JP2022125219A Active JP7404459B2 (ja) | 2010-03-26 | 2022-08-05 | 半導体装置 |
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JP2014077604A Active JP5798660B2 (ja) | 2010-03-26 | 2014-04-04 | 半導体装置 |
JP2015163874A Withdrawn JP2016021580A (ja) | 2010-03-26 | 2015-08-21 | 半導体装置 |
JP2016199824A Expired - Fee Related JP6280968B2 (ja) | 2010-03-26 | 2016-10-11 | 半導体装置の作製方法 |
JP2017100499A Active JP6412206B2 (ja) | 2010-03-26 | 2017-05-22 | 半導体装置の作製方法 |
JP2018181832A Active JP6595067B2 (ja) | 2010-03-26 | 2018-09-27 | 表示装置の作製方法 |
JP2019174475A Active JP6861253B2 (ja) | 2010-03-26 | 2019-09-25 | 液晶表示装置 |
JP2021055631A Active JP7121824B2 (ja) | 2010-03-26 | 2021-03-29 | 半導体装置及び半導体装置の作製方法 |
JP2022125219A Active JP7404459B2 (ja) | 2010-03-26 | 2022-08-05 | 半導体装置 |
JP2023209772A Pending JP2024028271A (ja) | 2010-03-26 | 2023-12-13 | 半導体装置 |
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