JP5568220B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5568220B2
JP5568220B2 JP2008127971A JP2008127971A JP5568220B2 JP 5568220 B2 JP5568220 B2 JP 5568220B2 JP 2008127971 A JP2008127971 A JP 2008127971A JP 2008127971 A JP2008127971 A JP 2008127971A JP 5568220 B2 JP5568220 B2 JP 5568220B2
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Japan
Prior art keywords
transistor
substrate
circuit
layer
single crystal
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JP2008127971A
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Japanese (ja)
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JP2009004757A (ja
JP2009004757A5 (enExample
Inventor
肇 木村
敦司 梅崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008127971A priority Critical patent/JP5568220B2/ja
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Publication of JP2009004757A5 publication Critical patent/JP2009004757A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/30—Digital stores in which the information is moved stepwise, e.g. shift registers using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0404—Matrix technologies
    • G09G2300/0408—Integration of the drivers onto the display substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02—Details of power systems and of start or stop of display operation
    • G09G2330/021—Power management, e.g. power saving
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Shift Register Type Memory (AREA)
  • Control Of El Displays (AREA)
JP2008127971A 2007-05-18 2008-05-15 半導体装置 Active JP5568220B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008127971A JP5568220B2 (ja) 2007-05-18 2008-05-15 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007133517 2007-05-18
JP2007133517 2007-05-18
JP2008127971A JP5568220B2 (ja) 2007-05-18 2008-05-15 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014127835A Division JP5778832B2 (ja) 2007-05-18 2014-06-23 半導体装置

Publications (3)

Publication Number Publication Date
JP2009004757A JP2009004757A (ja) 2009-01-08
JP2009004757A5 JP2009004757A5 (enExample) 2011-06-02
JP5568220B2 true JP5568220B2 (ja) 2014-08-06

Family

ID=40026999

Family Applications (7)

Application Number Title Priority Date Filing Date
JP2008127971A Active JP5568220B2 (ja) 2007-05-18 2008-05-15 半導体装置
JP2014127835A Active JP5778832B2 (ja) 2007-05-18 2014-06-23 半導体装置
JP2015137716A Withdrawn JP2015179881A (ja) 2007-05-18 2015-07-09 半導体装置
JP2018052059A Expired - Fee Related JP6522189B2 (ja) 2007-05-18 2018-03-20 半導体装置
JP2019081507A Withdrawn JP2019135790A (ja) 2007-05-18 2019-04-23 半導体装置
JP2020203935A Withdrawn JP2021064793A (ja) 2007-05-18 2020-12-09 半導体装置
JP2021212249A Withdrawn JP2022058429A (ja) 2007-05-18 2021-12-27 半導体装置

Family Applications After (6)

Application Number Title Priority Date Filing Date
JP2014127835A Active JP5778832B2 (ja) 2007-05-18 2014-06-23 半導体装置
JP2015137716A Withdrawn JP2015179881A (ja) 2007-05-18 2015-07-09 半導体装置
JP2018052059A Expired - Fee Related JP6522189B2 (ja) 2007-05-18 2018-03-20 半導体装置
JP2019081507A Withdrawn JP2019135790A (ja) 2007-05-18 2019-04-23 半導体装置
JP2020203935A Withdrawn JP2021064793A (ja) 2007-05-18 2020-12-09 半導体装置
JP2021212249A Withdrawn JP2022058429A (ja) 2007-05-18 2021-12-27 半導体装置

Country Status (2)

Country Link
US (2) US8803781B2 (enExample)
JP (7) JP5568220B2 (enExample)

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CN102751295B (zh) 2009-07-18 2015-07-15 株式会社半导体能源研究所 半导体装置与用于制造半导体装置的方法
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