JP5560595B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5560595B2 JP5560595B2 JP2009145552A JP2009145552A JP5560595B2 JP 5560595 B2 JP5560595 B2 JP 5560595B2 JP 2009145552 A JP2009145552 A JP 2009145552A JP 2009145552 A JP2009145552 A JP 2009145552A JP 5560595 B2 JP5560595 B2 JP 5560595B2
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- 239000004065 semiconductor Substances 0.000 title claims description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 29
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 23
- 150000002500 ions Chemical class 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052786 argon Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 8
- 229910000838 Al alloy Inorganic materials 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- -1 argon ions Chemical class 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910018125 Al-Si Inorganic materials 0.000 description 27
- 229910018520 Al—Si Inorganic materials 0.000 description 27
- 238000004544 sputter deposition Methods 0.000 description 21
- 239000010410 layer Substances 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 8
- 239000011800 void material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001485 argon Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
以上の実施例1の説明では、半導体装置としてIGBTを例に挙げたが、IGBT以外にパワーMOSFET、パワーダイオードなどのような半導体装置の表面側のAl−Si電極膜に対しても適用できる。
2 トレンチ
3 p型ベース領域
4 n+型エミッタ領域
5 ポリシリコンゲート電極
6 ゲート絶縁膜
7 層間絶縁膜
8 コンタクトホール
9 Al−Si電極膜
9a 1回目のAl−Si電極膜
9b 複数回目のAl−Si電極膜
10 n+型バッファ層
11 p型コレクタ層
12 コレクタ電極
13 ニッケル(Ni)膜。
Claims (4)
- 半導体基板の一方の主面側に半導体機能領域と所要のコンタクトホールを含む絶縁膜パターンを形成した後、該半導体基板の前記一方の主面側の全面に、0.5μm以上の膜厚でアルミニウム膜またはアルミニウム合金膜を成膜して前記コンタクトホールの底面を含む半導体基板表面に導電接触させて電極膜を形成する際に、前記アルミニウムの成膜工程を膜厚に関して複数回に分け、複数回の前記アルミニウム成膜工程の間に、直前のアルミニウム成膜表面の凹凸をアルゴンによるドライエッチングにより平坦化する工程を設けており、前記ドライエッチングは第1のイオンエネルギーを有するアルゴンイオンによってアルミニウム成膜表面の平坦部より傾斜部を強くエッチングする第1の工程と、該第1の工程の後に行う第2のイオンエネルギーを有するアルゴンイオンによる第2の工程を有し、前記第2のイオンエネルギーは前記第1のイオンエネルギーよりも小さい値であることを特徴とする半導体装置の製造方法。
- 前記平坦化工程における一回のエッチング量が0.5μm未満であることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記アルミニウム膜またはアルミニウム合金膜がTiとTiNとの積層膜を有するバリア金属膜を介して前記コンタクトホールの底面を含む半導体基板表面に導電接触していることを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記アルミニウム膜またはアルミニウム合金膜の表面に、さらにニッケル膜を形成する工程を有することを特徴とする請求項1乃至3のいずれか一項に記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009145552A JP5560595B2 (ja) | 2009-06-18 | 2009-06-18 | 半導体装置の製造方法 |
US12/815,944 US8227323B2 (en) | 2009-06-18 | 2010-06-15 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009145552A JP5560595B2 (ja) | 2009-06-18 | 2009-06-18 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011003726A JP2011003726A (ja) | 2011-01-06 |
JP5560595B2 true JP5560595B2 (ja) | 2014-07-30 |
Family
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Family Applications (1)
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JP2009145552A Expired - Fee Related JP5560595B2 (ja) | 2009-06-18 | 2009-06-18 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
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US (1) | US8227323B2 (ja) |
JP (1) | JP5560595B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9237672B2 (en) | 2008-12-04 | 2016-01-12 | Io Data Centers, Llc | System and method of providing computer resources |
US9772610B2 (en) | 2008-12-04 | 2017-09-26 | Baselayer Technology, Llc | Modular data center |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102184890A (zh) * | 2011-04-25 | 2011-09-14 | 上海宏力半导体制造有限公司 | 金属互连结构形成方法和金属互连结构 |
JP6099302B2 (ja) * | 2011-10-28 | 2017-03-22 | 富士電機株式会社 | 半導体装置の製造方法 |
JP6347442B2 (ja) * | 2014-08-19 | 2018-06-27 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置の製造方法 |
JP6341126B2 (ja) * | 2015-03-20 | 2018-06-13 | 豊田合成株式会社 | 半導体装置および半導体装置の製造方法 |
JP2017126717A (ja) * | 2016-01-15 | 2017-07-20 | 東京エレクトロン株式会社 | 載置台の表面処理方法、載置台及びプラズマ処理装置 |
WO2018062046A1 (ja) * | 2016-09-29 | 2018-04-05 | 富士フイルム株式会社 | 電極用アルミニウム部材および電極用アルミニウム部材の製造方法 |
JP6264586B2 (ja) * | 2016-12-26 | 2018-01-24 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
JP6496925B2 (ja) * | 2017-12-28 | 2019-04-10 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6861855B2 (ja) * | 2018-02-02 | 2021-04-21 | 三菱電機株式会社 | 半導体装置の製造方法 |
CN111819697B (zh) | 2018-03-15 | 2024-05-03 | 三菱电机株式会社 | 半导体装置、电力变换装置 |
US10818748B2 (en) * | 2018-05-14 | 2020-10-27 | Microchip Technology Incorporated | Thin-film resistor (TFR) formed under a metal layer and method of fabrication |
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JPS5690525A (en) | 1979-11-28 | 1981-07-22 | Fujitsu Ltd | Manufacture of semiconductor device |
JP2602276B2 (ja) * | 1987-06-30 | 1997-04-23 | 株式会社日立製作所 | スパツタリング方法とその装置 |
JP3123092B2 (ja) * | 1991-03-06 | 2001-01-09 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH06267888A (ja) | 1993-03-12 | 1994-09-22 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2655471B2 (ja) | 1993-11-17 | 1997-09-17 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH08139190A (ja) * | 1994-11-11 | 1996-05-31 | Seiko Epson Corp | 半導体装置の製造方法 |
US5730835A (en) * | 1996-01-31 | 1998-03-24 | Micron Technology, Inc. | Facet etch for improved step coverage of integrated circuit contacts |
US6057234A (en) * | 1996-04-29 | 2000-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor device |
JP3804881B2 (ja) | 1996-04-29 | 2006-08-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製装置および半導体装置の作製方法 |
JPH10173049A (ja) | 1996-12-11 | 1998-06-26 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US6949464B1 (en) * | 1998-09-03 | 2005-09-27 | Micron Technology, Inc. | Contact/via force fill techniques |
JP2001332664A (ja) | 2000-05-24 | 2001-11-30 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
JP2003152075A (ja) | 2001-11-09 | 2003-05-23 | Sony Corp | 半導体装置の製造方法 |
KR20030041495A (ko) * | 2001-11-20 | 2003-05-27 | 주식회사 하이닉스반도체 | 반도체 소자 및 제조 방법 |
JP3819337B2 (ja) * | 2002-07-25 | 2006-09-06 | 三菱電機株式会社 | 半導体装置の製造方法 |
US7211502B2 (en) * | 2003-03-26 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP4228926B2 (ja) | 2003-10-03 | 2009-02-25 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
JP2005327799A (ja) * | 2004-05-12 | 2005-11-24 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP4501533B2 (ja) * | 2004-05-31 | 2010-07-14 | 株式会社デンソー | 半導体装置の製造方法 |
TWI307171B (en) * | 2006-07-03 | 2009-03-01 | Au Optronics Corp | Method for manufacturing bottom substrate of liquid crystal display device |
JP2009141230A (ja) * | 2007-12-10 | 2009-06-25 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法および半導体装置製造用スパッタ装置 |
-
2009
- 2009-06-18 JP JP2009145552A patent/JP5560595B2/ja not_active Expired - Fee Related
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2010
- 2010-06-15 US US12/815,944 patent/US8227323B2/en active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9237672B2 (en) | 2008-12-04 | 2016-01-12 | Io Data Centers, Llc | System and method of providing computer resources |
US20160106009A1 (en) | 2008-12-04 | 2016-04-14 | Io Data Centers, Llc | System and method of providing computer resources |
US9772610B2 (en) | 2008-12-04 | 2017-09-26 | Baselayer Technology, Llc | Modular data center |
US10039212B2 (en) | 2008-12-04 | 2018-07-31 | Baselayer Technology, Llc | System and method of providing computer resources |
US10251317B2 (en) | 2008-12-04 | 2019-04-02 | Baselayer Technology, Llc | System and method of providing computer resources |
Also Published As
Publication number | Publication date |
---|---|
US8227323B2 (en) | 2012-07-24 |
US20100323499A1 (en) | 2010-12-23 |
JP2011003726A (ja) | 2011-01-06 |
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