JP5558714B2 - 半導体パッケージ - Google Patents

半導体パッケージ Download PDF

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Publication number
JP5558714B2
JP5558714B2 JP2008532378A JP2008532378A JP5558714B2 JP 5558714 B2 JP5558714 B2 JP 5558714B2 JP 2008532378 A JP2008532378 A JP 2008532378A JP 2008532378 A JP2008532378 A JP 2008532378A JP 5558714 B2 JP5558714 B2 JP 5558714B2
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JP
Japan
Prior art keywords
power
electrode
bidirectional
semiconductor element
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008532378A
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English (en)
Japanese (ja)
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JP2009512999A (ja
JP2009512999A5 (https=
Inventor
フー クンツォン
チャー チュワン
Original Assignee
インターナショナル レクティフィアー コーポレイション
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Publication of JP2009512999A publication Critical patent/JP2009512999A/ja
Publication of JP2009512999A5 publication Critical patent/JP2009512999A5/ja
Application granted granted Critical
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/10Arrangements for heating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/70Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77Auxiliary members characterised by their shape
    • H10W40/778Auxiliary members characterised by their shape in encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07336Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07337Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/074Connecting or disconnecting of anisotropic conductive adhesives
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/076Connecting or disconnecting of strap connectors
    • H10W72/07631Techniques
    • H10W72/07636Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/076Connecting or disconnecting of strap connectors
    • H10W72/07631Techniques
    • H10W72/07637Techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/321Structures or relative sizes of die-attach connectors
    • H10W72/325Die-attach connectors having a filler embedded in a matrix
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/353Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/944Dispositions of multiple bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/764Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP2008532378A 2005-09-21 2006-09-21 半導体パッケージ Expired - Fee Related JP5558714B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US71924205P 2005-09-21 2005-09-21
US60/719,242 2005-09-21
PCT/US2006/036797 WO2007035862A2 (en) 2005-09-21 2006-09-21 Semiconductor package

Publications (3)

Publication Number Publication Date
JP2009512999A JP2009512999A (ja) 2009-03-26
JP2009512999A5 JP2009512999A5 (https=) 2011-09-22
JP5558714B2 true JP5558714B2 (ja) 2014-07-23

Family

ID=37889531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008532378A Expired - Fee Related JP5558714B2 (ja) 2005-09-21 2006-09-21 半導体パッケージ

Country Status (5)

Country Link
US (1) US7304372B2 (https=)
JP (1) JP5558714B2 (https=)
DE (1) DE112006002488B4 (https=)
TW (1) TWI372450B (https=)
WO (1) WO2007035862A2 (https=)

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US7804131B2 (en) * 2006-04-28 2010-09-28 International Rectifier Corporation Multi-chip module
DE102007007142B4 (de) * 2007-02-09 2008-11-13 Infineon Technologies Ag Nutzen, Halbleiterbauteil sowie Verfahren zu deren Herstellung
US20110134607A1 (en) * 2009-12-07 2011-06-09 Schnetker Ted R Solid state switch arrangement
US8482019B2 (en) * 2010-01-28 2013-07-09 Infineon Technologies Ag Electronic light emitting device and method for fabricating the same
US8853706B2 (en) 2011-05-04 2014-10-07 International Rectifier Corporation High voltage cascoded III-nitride rectifier package with stamped leadframe
US8546849B2 (en) * 2011-05-04 2013-10-01 International Rectifier Corporation High voltage cascoded III-nitride rectifier package utilizing clips on package surface
US8853707B2 (en) 2011-05-04 2014-10-07 International Rectifier Corporation High voltage cascoded III-nitride rectifier package with etched leadframe
US8698293B2 (en) * 2012-05-25 2014-04-15 Infineon Technologies Ag Multi-chip package and method of manufacturing thereof
US9576887B2 (en) * 2012-10-18 2017-02-21 Infineon Technologies Americas Corp. Semiconductor package including conductive carrier coupled power switches
US9171837B2 (en) 2012-12-17 2015-10-27 Nxp B.V. Cascode circuit
US9202811B2 (en) * 2012-12-18 2015-12-01 Infineon Technologies Americas Corp. Cascode circuit integration of group III-N and group IV devices
US9870978B2 (en) 2013-02-28 2018-01-16 Altera Corporation Heat spreading in molded semiconductor packages
JP6211829B2 (ja) 2013-06-25 2017-10-11 株式会社東芝 半導体装置
US9443787B2 (en) 2013-08-09 2016-09-13 Infineon Technologies Austria Ag Electronic component and method
US9362240B2 (en) 2013-12-06 2016-06-07 Infineon Technologies Austria Ag Electronic device
US9653386B2 (en) * 2014-10-16 2017-05-16 Infineon Technologies Americas Corp. Compact multi-die power semiconductor package
KR20150108685A (ko) * 2014-03-18 2015-09-30 삼성전기주식회사 반도체모듈 패키지 및 그 제조 방법
JP2016099127A (ja) * 2014-11-18 2016-05-30 富士電機株式会社 パワー半導体モジュールの製造方法及びその中間組立ユニット
US10490478B2 (en) 2016-07-12 2019-11-26 Industrial Technology Research Institute Chip packaging and composite system board
CN106505058A (zh) * 2016-12-05 2017-03-15 嘉盛半导体(苏州)有限公司 半导体多芯片模块系统
KR102153159B1 (ko) * 2017-06-12 2020-09-08 매그나칩 반도체 유한회사 전력 반도체의 멀티칩 패키지
US12176274B2 (en) * 2018-11-26 2024-12-24 Texas Instruments Incorporated Multi-die package with multiple heat channels
US11948855B1 (en) 2019-09-27 2024-04-02 Rockwell Collins, Inc. Integrated circuit (IC) package with cantilever multi-chip module (MCM) heat spreader
US12094800B2 (en) * 2019-12-19 2024-09-17 Intel Corporation Thermally conductive slugs/active dies to improve cooling of stacked bottom dies
EP4629776A3 (en) * 2021-05-25 2025-12-10 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based semiconductor bidirectional switching device and method for manufacturing the same
CN116631985A (zh) * 2023-05-25 2023-08-22 广东致能科技有限公司 一种半导体器件及其制备方法

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JPS564275A (en) * 1979-06-25 1981-01-17 Fujitsu Ltd Semiconductor device
CH668667A5 (de) * 1985-11-15 1989-01-13 Bbc Brown Boveri & Cie Leistungshalbleitermodul.
JPS62119471A (ja) * 1985-11-20 1987-05-30 Fujitsu Ltd 双方向トランジスタのシミユレーシヨンモデル化方式
US5077595A (en) * 1990-01-25 1991-12-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US5382916A (en) * 1991-10-30 1995-01-17 Harris Corporation Differential voltage follower
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Also Published As

Publication number Publication date
DE112006002488B4 (de) 2014-05-28
DE112006002488T5 (de) 2008-07-17
US20070063216A1 (en) 2007-03-22
WO2007035862A2 (en) 2007-03-29
US7304372B2 (en) 2007-12-04
TWI372450B (en) 2012-09-11
JP2009512999A (ja) 2009-03-26
WO2007035862A3 (en) 2009-04-30
TW200717728A (en) 2007-05-01

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