JP2016099127A - パワー半導体モジュールの製造方法及びその中間組立ユニット - Google Patents
パワー半導体モジュールの製造方法及びその中間組立ユニット Download PDFInfo
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- JP2016099127A JP2016099127A JP2014233644A JP2014233644A JP2016099127A JP 2016099127 A JP2016099127 A JP 2016099127A JP 2014233644 A JP2014233644 A JP 2014233644A JP 2014233644 A JP2014233644 A JP 2014233644A JP 2016099127 A JP2016099127 A JP 2016099127A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 207
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000011888 foil Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000007689 inspection Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 28
- 229910000679 solder Inorganic materials 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 7
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- 230000002950 deficient Effects 0.000 abstract description 8
- 238000009413 insulation Methods 0.000 abstract 1
- 239000000523 sample Substances 0.000 description 16
- 238000005259 measurement Methods 0.000 description 15
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- 229920005989 resin Polymers 0.000 description 15
- 238000010586 diagram Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
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- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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Abstract
【解決手段】 金属箔付き絶縁基板3の金属箔3bには、基板材料が異なり、漏れ電流の大きさに1桁以上の差がある、半導体素子1aと2bが半田付けされている。半導体素子1aと2bの表面電極には、半導体素子間を連結しない、配線部材20aと20bがそれぞれ接続されている。前記配線部材を介して、各半導体素子に個別に通電を行い、漏れ電流の検査を個別に行うことができるので、漏れ電流の大きい不良を発見することができる。
【選択図】図3
Description
基板材料が異なる、半導体素子1a、2bの裏面を、絶縁基板3の第1金属箔3bに半田付けする。
配線部材20a、20bを、それぞれ半導体素子1a、2bの表面電極に半田付けして、中間組立ユニット200とする。
上記手順で組み立てた中間組立ユニット200の電気特性(漏れ電流等)を検査する。検査に合格した中間組立ユニット200については、組立工程3に進むことができる。
中間組立ユニット200を樹脂ケース8に組み込み、配線部材20a、20bにバスバー6を接続する。
バスバー6によって半導体素子1a、2bを連結した後、必要に応じて他の項目を検査することができる。例えば、インバータ回路の特性試験などは、半導体素子間を連結した状態で実施することができる。
樹脂ケース8に封止樹脂9を充填し、パワー半導体モジュール2000とする。
3:絶縁基板
3a:絶縁板
3b:第1金属箔
3c:第2金属箔
4a、4b、5a、5b、5c:半田
6:バスバー
7:レーザー溶接部
8:樹脂ケース
8a:樹脂ケースのバスバーを鋳込んだ側の内面
9:封止樹脂
10:配線部材(半導体素子間を連結する)
20a、20b、30a、30b、40a、40b、50a、50b,60a、60b:配線部材(半導体素子間を連結しない)
21a、21b、31a、31b、41a、41b、51a、51b、61a、61b:配線部材の上面
22a、22b、32a、32b、42a、42b、52a、52b、62a、62b:配線部材の下面
33a、33b:配線部材の「コ」の字の解放部分
34a、34b:配線部材の「コ」の字の連結部分
100、200、300、400、500、600:中間組立ユニット
2000、3000、4000,5000,6000:パワー半導体モジュール
P1、P2:測定プローブ
VS:電圧源
AM:電流計
D300、D301、D400:2つの配線部材の「コ」の字の連結部間の距離
H200、H300、H301、H400、H500、H600:絶縁基板の表面から配線部材までの高さ
H200a、H200b、H300a、H300b、H301a、H301b、H400a、H400b、H500a、H500b、H600a、H600b:配線部材の高さ
L300、L301、L400:樹脂ケースの内面から配線部材の「コ」の字の連結部までの距離
S200、S300、S301:配線部材間の隙間
W200、W300、W301:測定プローブを接触させる配線部材の上面の幅
Claims (11)
- 金属箔付き絶縁基板の片面の金属箔に、基板材料及び高さが異なる少なくとも2以上の半導体素子を半田付けすると共に、各半導体素子の表面電極に、前記半導体素子間を連結しない複数の配線部材を、前記配線部材が前記半導体素子の表面電極に半田を介して接続された後の状態で、前記絶縁基板の表面から前記配線部材の上面までの高さが同一となるように接続する半導体素子接合工程と、
前記配線部材を介して、各半導体素子に個別に通電を行い、漏れ電流の検査を行う検査工程と、
前記配線部材の上面間をバスバーで接続する配線部材接続工程と、
を含むことを特徴とするパワー半導体モジュールの製造方法。 - 前記絶縁基板の表面から前記配線部材の上面までの高さが同一となるように、前記半導体素子の高さに応じて、前記配線部材の下面から上面までの高さがそれぞれ定められた前記配線部材を接続する請求項1に記載のパワー半導体モジュールの製造方法。
- 前記絶縁基板の表面から前記配線部材の上面までの高さが同一となるように、前記半導体素子の高さに応じて、前記配線部材と前記半導体素子の表面電極とを接続する前記半田の厚さがそれぞれ定められた厚さになるように、前記配線部材を接続する請求項1に記載のパワー半導体モジュールの製造方法。
- 前記配線部材の接続工程における配線部材とバスバーとの接続を、レーザー溶接によって行う、請求項1〜3のいずれか1つに記載のパワー半導体モジュールの製造方法。
- 前記配線部材又は/及びバスバーは、バネ性を有する材質及び構造とされている、請求項1〜4のいずれか1つに記載のパワー半導体モジュールの製造方法。
- 前記半導体素子は、少なくとも1つが炭化シリコン半導体素子であり、他がシリコン半導体素子である、請求項1〜5のいずれか1つに記載のパワー半導体モジュールの製造方法。
- 金属箔付き絶縁基板と、
該絶縁基板の片面の金属箔に半田付けされた、基板材料及び高さが異なる少なくとも2以上の半導体素子と、
前記各半導体素子の表面電極に半田を介して個別に接続された状態で、前記絶縁基板の表面から上面までの高さが同一となる、前記半導体素子間を連結しない複数の配線部材と、
前記配線部材の前記上面間を接続するバスバーと、
を備えることを特徴とするパワー半導体モジュール用の中間組立ユニット。 - 前記配線部材の下面から上面までの高さが、前記絶縁基板の表面から前記配線部材の上面までの高さが同一となるように、前記半導体素子の高さに応じて、それぞれ定められている請求項7に記載のパワー半導体モジュール用の中間組立ユニット。
- 前記配線部材と前記半導体素子の表面電極とを接続する前記半田の厚さが、前記絶縁基板の表面から前記配線部材の上面までの高さが同一となるように、前記半導体素子の高さに応じて、それぞれ定められている請求項7に記載のパワー半導体モジュール用の中間組立ユニット。
- 前記配線部材及び/又はバスバーは、バネ性を有する材質及び構造とされている、請求項7〜9のいずれか1つに記載のパワー半導体モジュール用の中間組立ユニット。
- 前記半導体素子は、少なくとも1つが炭化シリコン半導体素子であり、他がシリコン半導体素子である、請求項7〜10のいずれか1つに記載のパワー半導体モジュール用の中間組立ユニット。
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US14/877,334 US9741628B2 (en) | 2014-11-18 | 2015-10-07 | Method for manufacturing semiconductor module and intermediate assembly unit of the same |
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JP2018129414A (ja) * | 2017-02-09 | 2018-08-16 | 株式会社東芝 | 半導体モジュール |
JP2019050301A (ja) * | 2017-09-11 | 2019-03-28 | 株式会社東芝 | パワー半導体モジュール |
JP2021002552A (ja) * | 2019-06-20 | 2021-01-07 | 富士電機株式会社 | 半導体装置及びその製造方法、並びに半導体モジュール |
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JP6341427B2 (ja) * | 2015-01-21 | 2018-06-13 | 株式会社オートネットワーク技術研究所 | 回路構成体及び電気接続箱 |
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CN105609440A (zh) | 2016-05-25 |
US9741628B2 (en) | 2017-08-22 |
CN105609440B (zh) | 2021-04-13 |
US20160141214A1 (en) | 2016-05-19 |
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