CN104067387B - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN104067387B CN104067387B CN201380006323.5A CN201380006323A CN104067387B CN 104067387 B CN104067387 B CN 104067387B CN 201380006323 A CN201380006323 A CN 201380006323A CN 104067387 B CN104067387 B CN 104067387B
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Abstract
具有与散热板相当的托盘(10),在托盘的收纳部(15)收纳电路部(60),以露出外部电极(41、43)的状态以密封树脂(70)将电路部进行浇灌密封。密封树脂覆盖托盘的顶部(10a)进行密封。
Description
技术领域
本发明涉及一种半导体装置,特别是涉及一种具有从发电、送电至能量的高效利用、再生的所有情况下利用的电力半导体元件的半导体装置及其制造方法。
背景技术
在从工业设备至家电以及信息终端的所有产品中正普及着功率模块(电力半导体装置),关于装载在家电中的功率模块,特别要求小型化和高可靠性。在这种功率模块中,内含的电力半导体元件由于处理高电压以及大电流而发热,设置有对该热量进行散热的金属制的底板。另一方面,通过高电压以及大电流的电极端子需要与底板确保绝缘距离。
因此,例如在专利文献1、专利文献2中,公开了如下功率模块:将电极配置在模块的上表面,在相对置的下表面配置底板,以传递模塑法来将电路部进行树脂密封。通过采取这种结构,与在其侧面配置电极的情况相比能够实现封装的小型化。
另外,对功率模块还同时要求能够应用于由于动作温度高、动作效率优良而成为今后主流的可能性高的SiC半导体的封装方式。
专利文献1:日本特开平9-283681号公报
专利文献2:日本特开平10-22435号公报
专利文献3:日本特开2007-49131号公报
发明内容
在专利文献1以及专利文献2中,如上述那样都以传递模塑法的密封作业形成了功率模块。在这种情况下,为了在功率模块的上表面可靠地露出电极,需要将电极极高精度地定位到传递模塑模具。为了避免该课题,提出了例如使电极具有弹性来对上述模具按压电极的方法、在密封后弯曲电极等来露出到外部的方法。
然而,在对传递模塑模具按压电极的情况下,对电极的根部部分作用了过大的负荷,因此担心损伤接合了电极的半导体元件、基板。
另外,在密封后实施了弯曲电极等的加工的情况下,在电极与密封树脂之间引起间隙的产生等,担心绝缘破坏、吸湿导致的功率模块的品质劣化。
另外在专利文献3中,提出了与使用了桶状的金属板的功率模块的结构有关的提案。然而在专利文献3中,没有关于金属板与冷却器的连接的记述,在通过焊接来连接的情况下容易产生密封树脂的软化以及变形,但是没有叙述其对策。
另外,桶状的金属板记载为具有高度比内含的密封树脂更大的侧壁,但是由于侧壁的顶点的金属露出,导致与电极的绝缘距离变小。由此,存在需要绝缘性优良的电极保持用的外壳、或封装变大这样的问题。而且还存在如下问题:容易产生侧壁与密封树脂的热膨胀系数差导致的剥离,绝缘性随时间劣化。
这样在专利文献3的功率模块中品质劣化也成为问题。
本发明是为了解决这种问题而作出的,其目的在于提供一种没有半导体装置内的结构部分的损伤以及半导体装置的品质劣化的半导体装置及其制造方法。
为了达到上述目的,本发明如下地构成。
即本发明的一个方式中的半导体装置的特征在于,具备:托盘,具有凹状的收纳部;电路部,收容于所述收纳部,并具有半导体元件以及布线用构件;以及密封树脂,注入到所述收纳部,将所收容的所述电路部以及所述托盘的侧壁顶部进行浇灌密封,所述布线用构件的一部分在所述密封树脂的上表面露出为外部电极,所述密封树脂具有超过将所述托盘接合到冷却器的焊料的熔点的耐热温度。
根据本发明的一个方式中的半导体装置,在收容了电路部的托盘的收纳部中,露出外部电极地注入密封树脂来将电路部进行浇灌密封。由此,能够制作在密封树脂的上表面露出外部电极的半导体装置,此时,由于不是传递模塑法,因此不对半导体元件、基板带来压力、损伤、且使外部电极预先露出,在密封后不进行外部电极的弯曲等加工,因此也不会产生半导体装置的品质劣化。另外,通过使密封树脂的耐热温度具有比将托盘和冷却器接合的焊料更高的耐热性,能够抑制以焊接时的热过程引起的热软化以及变形为起因的强度劣化以及绝缘耐压劣化。
另外,密封树脂形成得高于托盘,金属制的托盘的侧壁顶部被密封树脂覆盖,另外,接近大电流用的电极的托盘侧壁形成得低于其它的托盘侧壁。由此,能够将金属托盘与电极之间的绝缘距离确保得大。由此,不需要外壳,能够抑制封装大小的扩大。
附图说明
图1是表示本发明的实施方式1中的半导体装置的立体图。
图2是表示从图1所示的半导体装置除去密封树脂的状态的半导体装置的立体图。
图3是图2所示的A-A部中的截面图。
图4是图2所示的B-B部中的截面图。
图5是表示图1所示的半导体装置所具备的托盘的一个变形例的立体图。
图6是图5所示的C-C部中的截面图。
图7是表示本发明的实施方式2中的半导体装置的结构的一部分的、具体地说表示托盘以及引线框的立体图。
图8是表示在图7所示的半导体装置中折弯了引线框的连接条的状态的立体图。
图9是表示本发明的实施方式3中的半导体装置的结构的一部分的、具体地说表示多腔的托盘的立体图。
图10A是表示本发明的实施方式4中的半导体装置的结构的一个例子的图。
图10B是表示本发明的实施方式4中的半导体装置的结构的另一例子的图。
图10C是表示本发明的实施方式4中的半导体装置的结构的又一例子的图。
图10D是表示本发明的实施方式4中的半导体装置的结构的其它例子的图。
图11A是关于本发明的实施方式4中的半导体装置的结构的另一其它例子所具备的托盘表示其成形前的状态的图。
图11B是表示具备成形了图11A所示的托盘用的构件的托盘的半导体装置的结构的图。
图12A是本发明的实施方式5中的半导体装置的结构,是表示树脂注入前的状态的立体图。
图12B是表示在图12A所示的半导体装置的托盘内注入了浇灌密封树脂的状态的立体图。
图12C是表示在图12B所示的半导体装置中折弯了托盘的一部分侧壁的状态的立体图。
图13A是表示本发明的实施方式6中的半导体装置的结构的一个例子的图。
图13B是本发明的实施方式6中的半导体装置的结构的其它例子所具备的托盘的立体图。
图14A是表示本发明的实施方式7中的半导体装置的结构的一个例子的图。
图14B是表示本发明的实施方式7中的半导体装置的结构的其它例子的图。
(附图标记说明)
10、10-2:托盘;10a:顶部;11:底面;12:低侧壁;13:高侧壁;15:收纳部;17:突起;18:切断部;30:二极管;31:IGBT;40:汇流条;41、43:外部电极;55:绝缘片;60:电路部;70:密封树脂;72:浇灌密封树脂;80:引线框;91:第1方向;92:第2方向;101~107:半导体装置;210:底板;211:爪构件;212:金属基板;216:侧壁;221、222a:固定部;226:突起;227:冷却器;227a:凹凸部;228:夹套(jacket);228a:制冷剂用通路;228b:底面;231:电极支撑构件。
具体实施方式
下面参照附图说明作为本发明的实施方式的半导体装置及其制造方法。此外,在各图中对相同或者同样的结构部分附加相同的标记。另外,下面的说明为了避免不必要地变得冗长从而使本领域技术人员容易理解,有时省略已经被广泛知晓的事项的详细说明以及对实质上相同的结构的重复说明。另外,下面的说明以及附图的内容不意图限定权利要求书所述的主题。
实施方式1.
参照图1~图4,说明本发明的实施方式1中的半导体装置101。这里作为半导体装置101,采取处理高电压(约200V~约1200V)以及大电流(约100A~约800A)的功率模块(电力半导体装置)为例,但是不限于此,半导体装置101也可以是处理高电压以及大电流以外的通常的电压以及电流的半导体装置。
本实施方式1中的半导体装置101作为基本的结构部分具备托盘10、电路部60、以及密封树脂70。
关于托盘10,在本实施方式中作为一个例子对1mm厚的铝板进行冲压加工而制作成凹状的托盘形状,具有底面11、高度低的低侧壁12、以及高度高的高侧壁13。由这些底面11、低侧壁12、以及高侧壁13形成收容电路部60的凹状的收纳部15。
形成收纳部15的高侧壁13是相互对置而分别在第1方向91上延伸的一对侧壁,是其高度比低侧壁12高的侧壁。另外,各个高侧壁13的上端部分折弯而形成凸缘部13a,在第1方向91中的凸缘部13a的两端部形成有贯通该凸缘部13a的贯通孔14。
另外,形成收纳部15的低侧壁12是如下的侧壁:沿着与第1方向91成直角的第2方向92在高侧壁13间相互对置地配置,形成为高度比高侧壁13低。
电路部60具有半导体元件和布线用构件。在本实施方式中,作为半导体元件具有二极管30和IGBT(Insulated Gate Bipolar Transiator:绝缘栅双极型晶体管)31,作为布线用构件具有汇流条40、外部电极41~43、引线44、信号电极45、以及焊料等。进一步详细地说明电路部60。
在托盘10的底面11上隔着绝缘片55装载Cu制的散热器20,在其上通过焊料51来接合二极管30和IGBT31。在二极管30以及IGBT31的有源面(active surface)配置Cu制汇流条40,通过焊料52来接合。汇流条40的一部分作为外部电极41、43在该半导体装置101的厚度方向101a上(图3)延伸,而且,汇流条40的其它一部分作为引线44与散热器20通过焊料53来接合。外部电极42接合到散热器20。而且,对信号电极45从IGBT31的栅极电极32等接合了键合引线(wirebond)54。
另外,在电路部60中,特别是与连接到IGBT31并处理高电压以及大电流的电力用电极相当的外部电极41、43配置在形成托盘10的收纳部15的低侧壁12侧。这样,对托盘10制作低侧壁12、且将电力用电极与低侧壁12对应起来,由此能够确保上述电力用电极与金属制的托盘10即低侧壁12之间的沿面距离,能够实现高的绝缘性。
具有这种结构的电路部60如上述那样隔着绝缘片55收容在托盘10的收纳部15。之后,在收纳部15中,注入构成密封树脂70的硅凝胶(silicone gel)71来密封电路部60,而且在其上将同样构成密封树脂70的浇灌(potting)密封剂72填充到收纳部15的整体中。
这里浇灌密封树脂72既可以例如图3所示地注入到收纳部15使得高度与相当于托盘10的高侧壁13中的顶部的凸缘部13a大致一致,也可以如图4所示地覆盖凸缘部13a而超过凸缘部13a的高度来注入到收纳部15。如图4所示,在覆盖凸缘部13a来配置了浇灌密封树脂72的情况下,能够更确保凸缘部13a与外部电极41等之间的绝缘性。
通过这种密封,如图1所示地成为外部电极41~43、信号电极45从浇灌密封剂72的表面露出的状态。另外,将管状的隔离物16与托盘10的贯通孔14相对应地粘接,具有电路部60的托盘10能够通过贯通孔14、隔离物16进行螺旋夹固定。
如以上所说明,在半导体装置101中,收容在托盘10的收纳部15中的电路部60由密封树脂70进行浇灌密封,此时外部电极41~43以及信号电极45延伸为露出到密封树脂70的表面。
由此,根据半导体装置101,在密封时不是按压电极的方式,因此不会存在使接合有电极的半导体元件、基板损伤的可能性,另外,也没有必要在密封后实施电极的加工,因此也不会存在绝缘破坏、吸湿导致的半导体装置的品质劣化的可能性。
在上述的实施方式中,作为装载IGBT31等半导体元件的散热器20而使用了Cu,但是也可以使用Al等其它的金属、AlN等陶瓷基板,在这种情况下也能够获得与Cu相同的效果。
另外,在汇流条40、外部电极41等中使用了Cu,但是也可以使用Ni-Fe合金、Al,在这种情况下也能够获得与Cu相同的效果。
另外,对于外部电极41~43以及信号电极45,也可以代替Cu板材而使用弹簧端子、压配合端子,该结构也能够获得与Cu板材的情况相同的效果。
另外,在上述的实施方式中,作为托盘10而使用了Al板,但是也可以使用Cu、Fe-Ni合金、不锈钢等金属制托盘,在这种情况下也能够获得与Al相同的效果。而且,在作为半导体元件而使用发热量小的功率元件、常规的元件的情况下,也可以使用氟化树脂、PET等树脂性托盘,在这种情况下也能够获得与Al相同的效果。
另外,对于金属制的托盘10,使用Cu、Ni、或者镀锡钢皮(镀Sn钢)等能够焊接的原材料来形成、或对铝等原材料的表面实施能够进行焊料接合的金属喷镀法,由此托盘10能够焊接到冷却器,能够进一步提高可靠性。
这样将托盘10与冷却器焊接的情况下,密封树脂70具有比焊接部分中的焊料的熔点更高的耐热温度。
另外,在上述的实施方式中,作为密封树脂70而使用了硅凝胶71以及浇灌密封剂72,但是不限于此,也可以通过使用浸透性高的浇灌密封剂来省略硅凝胶71,在这种情况下也能够获得相同的效果。
另外,如图5所示,也可以在托盘10的底面11的一部分形成筒状的突起17。该突起17在将浇灌密封后的半导体装置101组装到设备时能够作为螺旋夹固定用的开口部而灵活应用。由此,在半导体装置101组装到设备时,能够实现可靠的固定,能够实现可靠性的提高。
实施方式2.
在上述的实施方式1中,汇流条40、信号电极45等分别使用了独立的构件,但是在本实施方式2的半导体装置102中它们如图7所示地通过形成引线框80的框81、连接条(tiebar)82来与引线框80一体地形成。关于其它的结构,与上述的半导体装置101的结构相比没有变更。
在引线框80中形成有开口部83,还能够使用托盘10的贯通孔14将引线框80定位到托盘10。
在使用了这种引线框80的情况下,在将引线框80安装到托盘10的状态下,将焊料接合到设置于托盘10的收纳部15中的散热器20的二极管30以及IGBT31的有源面、和引线框80的汇流条40等的规定部位进行焊料接合。
之后,如图8所示,将在引线框80中具有外部电极41~43、信号电极45的连接条82部分折弯成沿着厚度方向101a。
在折弯后,如上所述地对收纳部15利用密封树脂70一起浇灌密封电路部60以及引线框80的汇流条40等的部分。
并且,在密封后、从外部电极41~43、信号电极45断开连接条82,由此对外部电极41~43、信号电极45能够进行独立的电极形成。
在实施方式2中的半导体装置102中,也能够获得实施方式1中的半导体装置101起到的上述的效果。在半导体装置102中,还通过使用引线框80,能够对半导体元件等一并地配置电极,因此能够实现半导体装置的生产率的提高,且还能够提高各电极的位置精度。
实施方式3.
在上述的各实施方式中,公开了对一个托盘10形成一个收纳部15的方式。如图9所示,在该实施方式3的半导体装置103中,一个托盘10-2构成为能够沿着第1方向91并列地收纳多个电路部60、即多个收纳部15。即,多腔的托盘10-2的高侧壁13具有能够沿着第1方向91并列地收纳多个电路部60的长度,且托盘10-2的低侧壁12在托盘10-2的底面11相互对置地配置在第1方向91中的多处。在本实施方式3中,低侧壁12是将底面11冲压加工成凸状而制作的。
此外,在图9中,图示了托盘10-2能够收容四个电路部60、即四个收纳部15,但是可收容数不限于四个,能够设为多个。
在这样构成的一个托盘10-2中,在各收纳部15中分别收容上述的电路部60,对它们一并地利用密封树脂70通过上述的方法来进行浇灌密封。这里,电路部60的结构、以及电路部60的上述电力用电极与托盘10-2的低侧壁12的配置关系与上述的情况相同,另外,电路部60浇灌密封方法也与上述的情况相同。即,实施方式3中的半导体装置103除了托盘10-2的方式与托盘10不同之外,其它的结构与实施方式1的半导体装置101相同。
密封后在位于与低侧壁12相对应的位置且沿着第2方向92的切断部18切断托盘10-2。通过该切断,从一个托盘10-2将多个电路部60单片化。
在这种本实施方式3的半导体装置103中,也能够获得实施方式1中的半导体装置101起到的效果。在本实施方式3的半导体装置103中,还能够通过使用多腔的托盘10-2来提高半导体装置的生产率。另外,将连续的平坦的底面11冲压加工来形成低侧壁12,因此与如托盘10那样分别形成低侧壁12的情况相比低侧壁12的制作变得容易,其高度的最优化也变得容易,由此还存在上述电力用电极与低侧壁12之间的沿面距离的确保也变得容易这样的优点。
另外,在本实施方式3中的半导体装置103中,还能够应用在实施方式1中说明的各变形例,而且还能够应用实施方式2的结构。此外,在半导体装置103中应用实施方式2的结构的情况下,密封后从外部电极41~43、信号电极45断开连接条82的动作在进行上述单片化之前、或者之后进行都是可以的。
另外,以联结了多个托盘的状态不切断地使用,将外部电极41~43等配置成跨过多个托盘,由此能够对基于功率半导体元件的并列使用的电力半导体装置的大容量化、以及基于电极端子的共用化的组装性的提高以及小型化等作出贡献。
实施方式4.
在图10A~图10D、图11A以及图11B中,表示本发明的实施方式4中的半导体装置104的概要图。在该实施方式4中的半导体装置104中如下地构成:将托盘10的侧壁的顶部10a用密封树脂覆盖,确保相对于金属制的托盘10的外部电极41~43的绝缘距离。
如图10A所示,在金属制的托盘10的收纳部15中,在陶瓷基板201的导体层202通过焊料51接合了二极管30以及IGBT31的陶瓷基板201通过焊接部56进行接合。汇流条40的一端与二极管30以及IGBT31通过焊料52来接合、另一端作为外部电极41、43向外部延伸。另外,在信号电极45中,从IGBT的栅极电极32等接合了键合引线50。
覆盖这种电路部60,对托盘10的收纳部15通过直接浇灌密封树脂72来密封,此时以覆盖托盘10的侧壁顶部10a的上表面的方式进行密封。这里,侧壁顶部10a与低侧壁12以及高侧壁13中的至少高侧壁13的侧壁顶部相当。
而且,这种金属制的托盘10对冷却器90通过焊接部57来接合。焊接部57形成有相对托盘10的低侧壁12以及高侧壁13足够高度的焊脚(fillet)(润湿)部57a,优选润湿到托盘10的底面11中的焊接部57的焊料厚度的200%以上的高度。
另外,按照这种制作工序顺序,浇灌密封树脂72具有比焊接部57的焊料的熔点更高的耐热温度。
在基于直接浇灌密封树脂72的收纳部15的密封中,也可以如图10B所示地将金属制或者树脂制的堤坝(dam)材料62设置在托盘10的侧壁顶部10a的上表面。通过设置堤坝材料62,使托盘10的高侧壁13更高,能够可靠地密封侧壁顶部10a。
另外,如图10C所示,也可以将托盘的侧壁顶部10a向收纳部15的内侧折弯。通过这样将侧壁顶部10a向收纳部15内侧折弯,能够将直接浇灌密封树脂72完全地覆盖侧壁顶部10a并且越过而注入到外侧。另外,也可以覆盖到焊料焊脚57a。
在图10A、图10B、以及图10C所示的半导体装置中,电路部60也与实施方式1的半导体装置101中的结构相同,因此能够获得实施方式1的半导体装置101起到的、没有半导体装置内的结构部分的损伤以及半导体装置的品质劣化这样的效果。而且本实施方式4的半导体装置104能够确保托盘10的侧壁顶部10a与外部电极41~43的绝缘距离。
另外,如图10D所示,还能够制作支撑外部电极41的树脂制的电极支撑构件411,配置成对金属制的托盘10的低侧壁12以及高侧壁13中的、至少低侧壁12的侧壁顶部进行嵌入。通过这样构成,通过向托盘10的收纳部15注入浇灌密封树脂72进行密封,能够将外部电极41~43相对托盘10进行定位。由此,能够与上述的各实施方式同样地获得没有半导体装置内的结构部分的损伤以及半导体装置的品质劣化这样的效果,而且能够确保相对于托盘10的外部电极41~43的绝缘距离。
在该实施方式4中的上述的结构中,表示了对金属制的托盘10装载陶瓷基板201等的结构,但是也可以如下地将托盘和基板一体地构成。即如图11A所示,托盘10具有形成托盘的金属制的底板210、带金属基板212的绝缘片55、以及爪构件211,在底板210上载置具有金属基板212的绝缘片55,将该绝缘片55的周围四边部分用金属制爪构件211夹住而固定在底板210。将这样具有绝缘片55、爪构件211、以及金属基板212的底板210如图11B所示地在爪构件211附近折弯而成形为托盘形。成形后,如已经说明那样,在金属基板212上装载二极管30、外部电极41等并注入浇灌密封树脂72进行密封。
通过这样一体地形成底板210和绝缘片55来作为金属制托盘10而使用,能够实现结构的简化以及高可靠化。此时,爪构件211夹住绝缘片55的外周部,因此能够抑制当将底板210以及爪构件211成形为托盘形时绝缘片55变形而剥离。
实施方式5.
接着,参照图12A~图12C来说明本发明的实施方式5中的半导体装置105。在实施方式1等中,为了确保金属制的托盘10与外部电极41~43之间的绝缘距离,在托盘10的低侧壁12侧配置了外部电极41~43。与此相对,在本实施方式5的半导体装置105中使用新的托盘215并通过折弯其侧壁来确保绝缘距离。下面详细地进行说明。
如图12A所示,金属制的托盘215通过将例如0.5mm厚的薄铜板进行冲压加工而成形为托盘形状。这里与托盘215的四边相对应的各侧壁没有高低,高度相同。另外,接近外部电极41~43的侧壁216以コ字状具有缝隙216a以便能够折弯。
其它的结构与实施方式1等中说明的结构相比没有变化。当简单说明时,在托盘215上隔着绝缘片55装载了Cu制散热器20,在其上通过焊料51接合了二极管30以及IGBT31。而且在其上部配置了Cu制汇流条40,通过焊料52与二极管30以及IGBT31的有源面接合。汇流条40的一部分作为外部电极41、43在铅垂方向上延伸、另外一部分作为引线44与散热器20通过焊料53接合。另外,外部电极42接合到散热器20。另外,对信号电极45从IGBT31的栅极电极32等接合了键合引线50。在以上那样构成的电路部60中,如图12B所示注入浇灌密封树脂72来密封了整体,成为外部电极41~43从浇灌密封树脂72露出的状态。另外,托盘215对冷却器90使用焊料57来进行焊接。
在基于浇灌密封材料72的树脂密封之后,如图12C所示,将位于外部电极41~43侧的托盘215的侧壁216沿着缝隙216a向托盘215的外侧、即向从外部电极41~43离开的方向折弯而制作半导体装置105。
通过这样构成,能够确保外部电极41~43与侧壁216的绝缘距离。当然在实施方式5中的半导体装置105中也与上述的各实施方式同样地,能够获得没有半导体装置内的结构部分的损伤以及半导体装置的品质劣化这样的效果。
关于侧壁216,也可以代替上述的缝隙216a,以浇灌密封树脂72不会漏出的程度形成细的狭缝,或者在树脂密封后沿着缝隙216a除去侧壁216。
另外,在侧壁216以外的侧壁的侧壁顶部也可以涂敷如实施方式4中说明的堤坝材料。由此能够将浇灌密封树脂72以覆盖侧壁顶部的方式更高地注入。
另外,这里使用了Cu制的托盘215,但是使用Fe-Ni合金、镀锡钢皮等金属材料也能够获得相同的效果。另外,在发热量较小的功率元件的情况下,例如在氟化树脂、PET等树脂性托盘中形成侧壁216,也能够获得与上述相同的效果。另外,使用了Cu制的散热器20,但是使用Al等其它的金属、以及AlN等陶瓷基板也能够获得与上述相同的效果。另外,作为汇流条40以及外部电极41等使用了Cu,但是使用Ni-Fe合金以及Al也能够获得相同的效果。
另外,这里使用了硅凝胶以及浇灌密封树脂72,但是如果使用浸透性高的浇灌密封剂则省略硅凝胶也能够获得相同的效果。
另外,将Cu板材使用为外部电极41以及信号电极45,但是例如使用弹簧端子以及压配合端子也能够获得相同的效果。
实施方式6.
接着,参照图13A以及图13B来说明本发明的实施方式6中的半导体装置106。在本实施方式6的半导体装置106中也使用新的托盘220、222。
即,如图13A所示,金属制的托盘220在周缘部的上部的一个或者多个部位具有向托盘220的内侧突出设置的固定部221。此外,其它的结构例如与实施方式1中的半导体装置101相同。
该固定部221以如下方式发挥作用。即,在将形成了电路部60的例如陶瓷基板201等装载在托盘220的收纳部15之后,将固定部221向内侧进行折弯,对形成在陶瓷基板201的表面的、独立的导体层202a进行焊接而固定。这里,独立的导体层202a是指同样形成在陶瓷基板201的表面且与焊接了IGBT31等的导体层202没有电连接的、独立的导体层。
通过这样设置固定部221来与导体层202a进行连接,能够加强托盘220与陶瓷基板201的接合。由此,能够与上述的各实施方式同样地获得没有半导体装置内的结构部分的损伤以及半导体装置的品质劣化这样的效果。
另外,作为类似结构,还能够使用如图13B所示的金属制的托盘222。托盘222具有在其四个角落形成水平狭缝223并将托盘222的各角部向内侧折弯而形成的折弯部222a。此外,折弯部222a与固定部的一个例子相当,另外,折弯部222a的形成方法不限于此。这种折弯部222a能够与上述的固定部221同样地通过与导体层202a进行连接来加强托盘220与陶瓷基板201的接合。由此,能够与上述的各实施方式同样地获得没有半导体装置内的结构部分的损伤以及半导体装置的品质劣化这样的效果。
实施方式7.
接着,参照图14A以及图14B来说明本发明的实施方式7中的半导体装置107。在本实施方式7的半导体装置107中也使用新的托盘225。此外,装填在托盘225的收纳部15中的电路部60与上述的各实施方式中的电路部相同,省略这里的说明。
金属制的托盘225如14A所示地,在位于与收纳部15相反侧且与冷却器相对置的冷却器面225a具有例如形成波形的凹凸状的突起226。另外,设置具有与该突起226对应地卡合的凹凸部227a的冷却器227。这种托盘225和冷却器227使托盘225的突起226和冷却器227的凹凸部227a咬合,例如通过铆接冷却器227来相互地固定。根据这种固定,能够实现与焊接相同的固定以及散热。由此,能够与上述的各实施方式同样地获得没有半导体装置内的结构部分的损伤以及半导体装置的品质劣化这样的效果。
而且作为冷却器,也可以如图14B所示地使用能够与托盘225之间不泄露制冷剂地进行接合的夹套228来形成制冷剂流过的制冷剂用通路228a。作为制冷剂,例如能够使用水。通过这样构成,托盘225中的突起226位于制冷剂用通路228a内来作为冷却片(coolingfin)发挥功能,能够进一步提高电路部60的冷却。这样本实施方式7的半导体装置107能够形成与冷却器一体化的半导体装置。
此外,通过适当组合上述的各种实施方式中的任意的实施方式,能够起到各自所具有的效果。
本发明参照附图与优选的实施方式相关联地被充分地记载,但是对于本领域技术人员而言各种的变形、修正是清楚的。这种变形、修正应该理解为在不超出基于附上的权利要求书的本发明的范围的前提下包含在其中。
另外,2012年3月22日申请的日本国专利申请No.特愿2012-65161号的说明书、附图、权利要求书、以及摘要的所有公开内容作为参考编入本说明书中。
Claims (14)
1.一种半导体装置,其特征在于,具备:
金属制的托盘,具有凹状的收纳部;
电路部,收容于所述收纳部,并具有半导体元件以及布线用构件;以及
密封树脂,注入到所述收纳部,对于所收容的所述电路部以及所述托盘的侧壁顶部,超过所述侧壁顶部的高度地进行浇灌密封,
所述布线用构件的一部分在所述密封树脂的上表面露出为外部电极,
所述密封树脂具有超过将所述托盘接合到冷却器的焊料的熔点的耐热温度。
2.根据权利要求1所述的半导体装置,其特征在于,
在所述托盘中,离所述外部电极中的处理高电压大电流的电力用电极近的侧壁形成为低于其它的侧壁。
3.根据权利要求1所述的半导体装置,其特征在于,
所述托盘具有形成所述收纳部的高侧壁和低侧壁,
所述高侧壁具有沿着作为其延伸方向的第1方向并列收容多组所述电路部的长度,
所述低侧壁相互对置地配置在所述第1方向中的多处,成为将被浇灌密封的各电路部单片化的切断部。
4.根据权利要求1所述的半导体装置,其特征在于,
还具备引线框,该引线框是能够安装在所述托盘的框架,该引线框一体地形成了包含所述外部电极的所述布线用构件,
在将该引线框安装在所述托盘的状态下将密封树脂注入到所述收纳部。
5.根据权利要求1所述的半导体装置,其特征在于,
所述托盘在所述收纳部的底面还具有筒状的突起。
6.根据权利要求1所述的半导体装置,其特征在于,
还具有电极支撑构件,该电极支撑构件安装在所述托盘的侧壁顶部,支撑所述外部电极。
7.根据权利要求1所述的半导体装置,其特征在于,
所述托盘具有金属制的底板、载置于该底板且具有金属基板的绝缘片、以及将载置的绝缘片固定到所述底板的金属制的爪构件,将所述底板成形为凹状而形成所述托盘。
8.根据权利要求1所述的半导体装置,其特征在于,
所述托盘具有能够在向收纳部注入所述密封树脂之后折弯的侧壁。
9.根据权利要求1所述的半导体装置,其特征在于,
所述托盘还具有固定部,该固定部形成于托盘上部来固定收容于所述收纳部的所述电路部。
10.一种半导体装置,其特征在于,具备:
金属制的托盘,具有凹状的收纳部;
电路部,收容于所述收纳部,并具有半导体元件以及布线用构件;
密封树脂,注入到所述收纳部,对于所收容的所述电路部以及所述托盘的侧壁顶部,超过所述侧壁顶部的高度地进行浇灌密封;以及
冷却器,安装于所述托盘,
所述布线用构件的一部分在所述密封树脂的上表面露出为外部电极,
所述托盘在与冷却器侧相对置的冷却器面具有突起。
11.根据权利要求10所述的半导体装置,其特征在于,
所述冷却器具有与托盘的所述突起卡合的凹凸部,使所述突起与所述凹凸部咬合来安装到所述托盘。
12.根据权利要求10所述的半导体装置,其特征在于,
所述冷却器是具有在与托盘的所述冷却器面之间形成制冷剂用通路的底面的夹套形状。
13.一种半导体装置的制造方法,该半导体装置具备:金属制的托盘,具有凹状的收纳部;以及电路部,具有收容于所述收纳部的半导体元件以及布线用构件,所述托盘具有在第1方向并列配置多个所述收纳部的大小以及形状,该半导体装置的制造方法的特征在于,
在各个收纳部中分别收容了所述电路部之后,通过向各收纳部一并地注入密封树脂来将各电路部进行浇灌密封,此时,超过所述托盘的侧壁顶部的高度地对所述侧壁顶部进行浇灌密封,并且使各电路部中的所述布线用构件的一部分在所述密封树脂的上表面露出为外部电极,
在所述密封后,沿着与所述第1方向成直角的第2方向针对每个所述收纳部切断所述托盘,将被浇灌密封的各电路部进行单片化。
14.根据权利要求13所述的半导体装置的制造方法,其特征在于,
所述半导体装置还具备引线框,该引线框是能够安装在所述托盘的框架,该引线框一体地形成了包含所述外部电极的所述布线用构件,
在将该引线框安装在所述托盘的状态下进行与所述半导体元件的焊料接合而形成各个所述电路部,
将密封树脂一并地注入到各个收纳部来将各个所述电路部进行密封,
在所述密封后,在所述单片化之前或者之后切断所述外部电极以外的所述引线框。
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