DE112006002488B4 - Halbleiter-Baueinheit - Google Patents

Halbleiter-Baueinheit Download PDF

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Publication number
DE112006002488B4
DE112006002488B4 DE112006002488.4T DE112006002488T DE112006002488B4 DE 112006002488 B4 DE112006002488 B4 DE 112006002488B4 DE 112006002488 T DE112006002488 T DE 112006002488T DE 112006002488 B4 DE112006002488 B4 DE 112006002488B4
Authority
DE
Germany
Prior art keywords
power
semiconductor device
electrically
electrode
power electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112006002488.4T
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German (de)
English (en)
Other versions
DE112006002488T5 (de
Inventor
Kunzhong Hu
Chuan Cheah
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
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Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of DE112006002488T5 publication Critical patent/DE112006002488T5/de
Application granted granted Critical
Publication of DE112006002488B4 publication Critical patent/DE112006002488B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/074—Connecting or disconnecting of anisotropic conductive adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07636—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07637—Techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/764—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Amplifiers (AREA)
DE112006002488.4T 2005-09-21 2006-09-21 Halbleiter-Baueinheit Expired - Fee Related DE112006002488B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US71924205P 2005-09-21 2005-09-21
US60/719,242 2005-09-21
PCT/US2006/036797 WO2007035862A2 (en) 2005-09-21 2006-09-21 Semiconductor package

Publications (2)

Publication Number Publication Date
DE112006002488T5 DE112006002488T5 (de) 2008-07-17
DE112006002488B4 true DE112006002488B4 (de) 2014-05-28

Family

ID=37889531

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112006002488.4T Expired - Fee Related DE112006002488B4 (de) 2005-09-21 2006-09-21 Halbleiter-Baueinheit

Country Status (5)

Country Link
US (1) US7304372B2 (https=)
JP (1) JP5558714B2 (https=)
DE (1) DE112006002488B4 (https=)
TW (1) TWI372450B (https=)
WO (1) WO2007035862A2 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7804131B2 (en) * 2006-04-28 2010-09-28 International Rectifier Corporation Multi-chip module
DE102007007142B4 (de) * 2007-02-09 2008-11-13 Infineon Technologies Ag Nutzen, Halbleiterbauteil sowie Verfahren zu deren Herstellung
US20110134607A1 (en) * 2009-12-07 2011-06-09 Schnetker Ted R Solid state switch arrangement
US8482019B2 (en) * 2010-01-28 2013-07-09 Infineon Technologies Ag Electronic light emitting device and method for fabricating the same
US8853706B2 (en) 2011-05-04 2014-10-07 International Rectifier Corporation High voltage cascoded III-nitride rectifier package with stamped leadframe
US8546849B2 (en) * 2011-05-04 2013-10-01 International Rectifier Corporation High voltage cascoded III-nitride rectifier package utilizing clips on package surface
US8853707B2 (en) 2011-05-04 2014-10-07 International Rectifier Corporation High voltage cascoded III-nitride rectifier package with etched leadframe
US8698293B2 (en) * 2012-05-25 2014-04-15 Infineon Technologies Ag Multi-chip package and method of manufacturing thereof
US9576887B2 (en) * 2012-10-18 2017-02-21 Infineon Technologies Americas Corp. Semiconductor package including conductive carrier coupled power switches
US9171837B2 (en) 2012-12-17 2015-10-27 Nxp B.V. Cascode circuit
US9202811B2 (en) * 2012-12-18 2015-12-01 Infineon Technologies Americas Corp. Cascode circuit integration of group III-N and group IV devices
US9870978B2 (en) 2013-02-28 2018-01-16 Altera Corporation Heat spreading in molded semiconductor packages
JP6211829B2 (ja) 2013-06-25 2017-10-11 株式会社東芝 半導体装置
US9443787B2 (en) 2013-08-09 2016-09-13 Infineon Technologies Austria Ag Electronic component and method
US9362240B2 (en) 2013-12-06 2016-06-07 Infineon Technologies Austria Ag Electronic device
US9653386B2 (en) * 2014-10-16 2017-05-16 Infineon Technologies Americas Corp. Compact multi-die power semiconductor package
KR20150108685A (ko) * 2014-03-18 2015-09-30 삼성전기주식회사 반도체모듈 패키지 및 그 제조 방법
JP2016099127A (ja) * 2014-11-18 2016-05-30 富士電機株式会社 パワー半導体モジュールの製造方法及びその中間組立ユニット
US10490478B2 (en) 2016-07-12 2019-11-26 Industrial Technology Research Institute Chip packaging and composite system board
CN106505058A (zh) * 2016-12-05 2017-03-15 嘉盛半导体(苏州)有限公司 半导体多芯片模块系统
KR102153159B1 (ko) * 2017-06-12 2020-09-08 매그나칩 반도체 유한회사 전력 반도체의 멀티칩 패키지
US12176274B2 (en) * 2018-11-26 2024-12-24 Texas Instruments Incorporated Multi-die package with multiple heat channels
US11948855B1 (en) 2019-09-27 2024-04-02 Rockwell Collins, Inc. Integrated circuit (IC) package with cantilever multi-chip module (MCM) heat spreader
US12094800B2 (en) * 2019-12-19 2024-09-17 Intel Corporation Thermally conductive slugs/active dies to improve cooling of stacked bottom dies
EP4629776A3 (en) * 2021-05-25 2025-12-10 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based semiconductor bidirectional switching device and method for manufacturing the same
CN116631985A (zh) * 2023-05-25 2023-08-22 广东致能科技有限公司 一种半导体器件及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4768075A (en) * 1985-11-15 1988-08-30 Bbc Brown, Boveri & Company, Limited Power semiconductor module
US5077595A (en) * 1990-01-25 1991-12-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US20050189561A1 (en) * 2004-02-12 2005-09-01 Kinzer Daniel M. III-Nitride bidirectional switch

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JPS564275A (en) * 1979-06-25 1981-01-17 Fujitsu Ltd Semiconductor device
JPS62119471A (ja) * 1985-11-20 1987-05-30 Fujitsu Ltd 双方向トランジスタのシミユレーシヨンモデル化方式
US5382916A (en) * 1991-10-30 1995-01-17 Harris Corporation Differential voltage follower
JPH06112744A (ja) * 1992-09-30 1994-04-22 Nec Ic Microcomput Syst Ltd 利得制御増幅器
US5446300A (en) * 1992-11-04 1995-08-29 North American Philips Corporation Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit
US5532512A (en) * 1994-10-03 1996-07-02 General Electric Company Direct stacked and flip chip power semiconductor device structures
JPH09162399A (ja) * 1995-12-12 1997-06-20 Toshiba Corp 半導体装置
JPH09283756A (ja) * 1996-04-18 1997-10-31 Toyota Autom Loom Works Ltd アナログスイッチ
JPH10117139A (ja) * 1996-10-09 1998-05-06 Fujitsu Ltd 半導体論理回路
US6591091B1 (en) * 1998-11-12 2003-07-08 Broadcom Corporation System and method for coarse/fine PLL adjustment
JP3259703B2 (ja) * 1998-12-28 2002-02-25 日本電気株式会社 マイクロ波増幅回路
JP2000307413A (ja) * 1999-04-19 2000-11-02 Sony Corp 電圧変換回路及び通信回路網
JP3851760B2 (ja) * 2000-07-04 2006-11-29 松下電器産業株式会社 半導体装置、その実装方法、電子回路装置の製造方法及び該製造方法により製造された電子回路装置
US6858922B2 (en) * 2001-01-19 2005-02-22 International Rectifier Corporation Back-to-back connected power semiconductor device package
JP3616343B2 (ja) * 2001-03-27 2005-02-02 松下電器産業株式会社 高周波スイッチ回路およびそれを用いた通信端末装置
JP4031971B2 (ja) * 2001-12-27 2008-01-09 富士通日立プラズマディスプレイ株式会社 パワーモジュール
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JP2005011986A (ja) * 2003-06-19 2005-01-13 Sanyo Electric Co Ltd 半導体装置
JP4559777B2 (ja) * 2003-06-26 2010-10-13 株式会社東芝 半導体装置及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4768075A (en) * 1985-11-15 1988-08-30 Bbc Brown, Boveri & Company, Limited Power semiconductor module
US5077595A (en) * 1990-01-25 1991-12-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US20050189561A1 (en) * 2004-02-12 2005-09-01 Kinzer Daniel M. III-Nitride bidirectional switch

Also Published As

Publication number Publication date
DE112006002488T5 (de) 2008-07-17
US20070063216A1 (en) 2007-03-22
WO2007035862A2 (en) 2007-03-29
US7304372B2 (en) 2007-12-04
TWI372450B (en) 2012-09-11
JP2009512999A (ja) 2009-03-26
WO2007035862A3 (en) 2009-04-30
JP5558714B2 (ja) 2014-07-23
TW200717728A (en) 2007-05-01

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8125 Change of the main classification

Ipc: H01L 25/18 AFI20060921BHDE

R018 Grant decision by examination section/examining division
R020 Patent grant now final
R020 Patent grant now final

Effective date: 20150303

R081 Change of applicant/patentee

Owner name: INFINEON TECHNOLOGIES AMERICAS CORP., EL SEGUN, US

Free format text: FORMER OWNER: INTERNATIONAL RECTIFIER CORP., EL SEGUNDO, CALIF., US

R082 Change of representative

Representative=s name: DR. WEITZEL & PARTNER PATENT- UND RECHTSANWAEL, DE

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee