JP5558714B2 - 半導体パッケージ - Google Patents

半導体パッケージ Download PDF

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Publication number
JP5558714B2
JP5558714B2 JP2008532378A JP2008532378A JP5558714B2 JP 5558714 B2 JP5558714 B2 JP 5558714B2 JP 2008532378 A JP2008532378 A JP 2008532378A JP 2008532378 A JP2008532378 A JP 2008532378A JP 5558714 B2 JP5558714 B2 JP 5558714B2
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Japan
Prior art keywords
power
electrode
bidirectional
semiconductor element
power supply
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Expired - Fee Related
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JP2008532378A
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English (en)
Japanese (ja)
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JP2009512999A (ja
JP2009512999A5 (de
Inventor
フー クンツォン
チャー チュワン
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インターナショナル レクティフィアー コーポレイション
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13064—High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
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    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Amplifiers (AREA)
JP2008532378A 2005-09-21 2006-09-21 半導体パッケージ Expired - Fee Related JP5558714B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US71924205P 2005-09-21 2005-09-21
US60/719,242 2005-09-21
PCT/US2006/036797 WO2007035862A2 (en) 2005-09-21 2006-09-21 Semiconductor package

Publications (3)

Publication Number Publication Date
JP2009512999A JP2009512999A (ja) 2009-03-26
JP2009512999A5 JP2009512999A5 (de) 2011-09-22
JP5558714B2 true JP5558714B2 (ja) 2014-07-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008532378A Expired - Fee Related JP5558714B2 (ja) 2005-09-21 2006-09-21 半導体パッケージ

Country Status (5)

Country Link
US (1) US7304372B2 (de)
JP (1) JP5558714B2 (de)
DE (1) DE112006002488B4 (de)
TW (1) TWI372450B (de)
WO (1) WO2007035862A2 (de)

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US9202811B2 (en) * 2012-12-18 2015-12-01 Infineon Technologies Americas Corp. Cascode circuit integration of group III-N and group IV devices
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JP6211829B2 (ja) 2013-06-25 2017-10-11 株式会社東芝 半導体装置
US9443787B2 (en) 2013-08-09 2016-09-13 Infineon Technologies Austria Ag Electronic component and method
US9362240B2 (en) 2013-12-06 2016-06-07 Infineon Technologies Austria Ag Electronic device
US9653386B2 (en) * 2014-10-16 2017-05-16 Infineon Technologies Americas Corp. Compact multi-die power semiconductor package
KR20150108685A (ko) * 2014-03-18 2015-09-30 삼성전기주식회사 반도체모듈 패키지 및 그 제조 방법
JP2016099127A (ja) * 2014-11-18 2016-05-30 富士電機株式会社 パワー半導体モジュールの製造方法及びその中間組立ユニット
US10490478B2 (en) 2016-07-12 2019-11-26 Industrial Technology Research Institute Chip packaging and composite system board
CN106505058A (zh) * 2016-12-05 2017-03-15 嘉盛半导体(苏州)有限公司 半导体多芯片模块系统
KR102153159B1 (ko) * 2017-06-12 2020-09-08 매그나칩 반도체 유한회사 전력 반도체의 멀티칩 패키지
US20200168533A1 (en) * 2018-11-26 2020-05-28 Texas Instruments Incorporated Multi-die package with multiple heat channels
US11948855B1 (en) 2019-09-27 2024-04-02 Rockwell Collins, Inc. Integrated circuit (IC) package with cantilever multi-chip module (MCM) heat spreader
CN115548014B (zh) * 2021-05-25 2023-12-29 英诺赛科(苏州)科技有限公司 氮化物基双向切换器件和其制造方法

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TWI372450B (en) 2012-09-11
US20070063216A1 (en) 2007-03-22
JP2009512999A (ja) 2009-03-26
DE112006002488B4 (de) 2014-05-28
US7304372B2 (en) 2007-12-04
WO2007035862A3 (en) 2009-04-30
TW200717728A (en) 2007-05-01
DE112006002488T5 (de) 2008-07-17
WO2007035862A2 (en) 2007-03-29

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